Patents by Inventor Forrest Gregg McIntosh

Forrest Gregg McIntosh has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Methods of forming indium gallium nitride or aluminum indium gallium nitride using controlled hydrogen gas flows
    Patent number: 5851905
    Abstract: Stacked quantum well light emitting diodes include a plurality of stacked active layers of indium gallium nitride, separated by barrier layers of aluminum gallium nitride or aluminum indium gallium nitride, wherein the ratios of indium to gallium differ in at least two of the stacked active layers. Preferably, the differing ratios of indium to gallium are selected to produce emission wavelengths from the stacked active layers, such that the emission wavelengths are combined to produce white light. Controlled amounts of hydrogen gas are introduced into a reaction chamber during formation of indium gallium nitride or aluminum indium gallium nitride to produce high quality indium gallium nitride or aluminum indium gallium nitride which incorporate large percentages of indium and possesses excellent optical and surface properties.
    Type: Grant
    Filed: August 12, 1997
    Date of Patent: December 22, 1998
    Assignee: North Carolina State University
    Inventors: Forrest Gregg McIntosh, Salah Mohamed Bedair, Nadia Ahmed El-Masry, John Claassen Roberts
  • Stacked quantum well aluminum indium gallium nitride light emitting diodes
    Patent number: 5684309
    Abstract: Stacked quantum well light emitting diodes include a plurality of stacked active layers of indium gallium nitride, separated by barrier layers of aluminum gallium nitride or aluminum indium gallium nitride, wherein the ratios of indium to gallium differ in at least two of the stacked active layers. Preferably, the differing ratios of indium to gallium are selected to produce emission wavelengths from the stacked active layers, such that the emission wavelengths are combined to produce white light. Controlled amounts of hydrogen gas are introduced into a reaction chamber during formation of indium gallium nitride or aluminum indium gallium nitride to produce high quality indium gallium nitride or aluminum indium gallium nitride which incorporate large percentages of indium and possesses excellent optical and surface properties.
    Type: Grant
    Filed: July 11, 1996
    Date of Patent: November 4, 1997
    Assignee: North Carolina State University
    Inventors: Forrest Gregg McIntosh, Salah Mohamed Bedair, Nadia Ahmed El-Masry, John Claassen Roberts