Abstract: A semiconductor package comprises an encapsulation having a first lateral side and an opposite second lateral side, at least one power semiconductor chip having a drain contact region running along the first lateral side, a source contact region running along the second lateral side, and first and second inner contact regions arranged between the drain and source contact regions, a first external terminal which is connected to the drain contact region, is arranged centrally on the first lateral side, and is configured to apply a supply voltage for the at least one power semiconductor chip, a second external terminal which is connected to the source contact region, is arranged centrally on the second lateral side, and is configured to apply a reference voltage for the at least one power semiconductor chip, third and fourth external terminals which are connected to the first inner contact region.

Abstract: A package includes a dielectric carrier, an electronic component mounted on the dielectric carrier, and an encapsulant encapsulating at least part of the dielectric carrier and the electronic component. Corresponding methods of manufacturing the package are also described.

Abstract: A lead frame includes a first die paddle, a second die paddle, a first lead, a second lead, and a third lead. The first lead is coupled to a first side of the first die paddle. The second lead is coupled to a second side of the first die paddle opposite to the first side of the first die paddle. The third lead is coupled to a first side of the second die paddle. At least one of the first lead, the second lead, and the third lead is coupled to the corresponding die paddle via a zigzag shaped tie bar.

Abstract: A semiconductor device includes a semiconductor substrate, a power transistor formed in the semiconductor substrate, the power transistor including an active area in which one or more power transistor cells are formed, a first metal pad formed above the semiconductor substrate and covering substantially all of the active area of the power transistor, the first metal pad being electrically connected to a source or emitter region in the active area of the power transistor, the first metal pad including an interior region laterally surrounded by a peripheral region, the peripheral region being thicker than the interior region, and a first interconnect plate or a semiconductor die attached to the interior region of the first metal pad by a die attach material. Corresponding methods of manufacture are also described.

Abstract: A lead frame includes a first die paddle, a second die paddle, a first lead, a second lead, and a third lead. The first lead is coupled to a first side of the first die paddle. The second lead is coupled to a second side of the first die paddle opposite to the first side of the first die paddle. The third lead is coupled to a first side of the second die paddle. At least one of the first lead, the second lead, and the third lead is coupled to the corresponding die paddle via a zigzag shaped tie bar.

Abstract: A semiconductor device includes a semiconductor substrate, a power transistor formed in the semiconductor substrate, the power transistor including an active area in which one or more power transistor cells are formed, a first metal pad formed above the semiconductor substrate and covering substantially all of the active area of the power transistor, the first metal pad being electrically connected to a source or emitter region in the active area of the power transistor, the first metal pad including an interior region laterally surrounded by a peripheral region, the peripheral region being thicker than the interior region, and a first interconnect plate or a semiconductor die attached to the interior region of the first metal pad by a die attach material. Corresponding methods of manufacture are also described.