Patents by Inventor Frédéric Barbier
Frédéric Barbier has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11050054Abstract: Electrode for a lithium storage battery, or a lithium battery, including: an active electrode material, made from silicon, a conductive agent, a binder comprising a mixture of two polymers: the first polymer having a first molecular weight, the first polymer being a first polyacrylate or one of its derivatives, the second polymer having a second molecular weight, the second polymer being a second polyacrylate or a carboxymethyl cellulose, or one of their respective derivatives. The first molecular weight is less than or equal to 400,000 g/mol and greater than or equal to 150,000 g/mol. The second molecular weight is greater than or equal to 650,000 g/mol and less than or equal to 4,000,000 g/mol.Type: GrantFiled: March 7, 2017Date of Patent: June 29, 2021Assignees: COMMISSARIAT À L'ÉNERGIE ATOMIQUE ET AUX ÉNERGIES ALTERNATIVES, UMICOREInventors: Willy Porcher, Frédéric Barbier, Sophie Chazelle, Nicolas Mariage, Léo Merchat
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Publication number: 20210168320Abstract: The invention relates to charge-coupled TDI image sensors for the observation of one and the same image strip by multiple rows of pixels in succession with summation of the electric charge generated by an image point, for a row duration (TL ), in the pixels of the same rank of the various rows. According to the invention, the pixels are subdivided, in the direction of movement, into at least two adjacent portions (SUBai,j, SUBbi,j), each portion comprising at least one charge storage area that is independent of the storage areas of the other portion while allowing a transfer of charge from the first portion to the second, one of the portions (SUBai,j) being masked against light and the other portion (SUBbi,j) not being masked. The unmasked portion comprises a charge removal structure which is activated at a variable moment in time defining a start of actual integration that is independent of the start of a period of observing the image strip.Type: ApplicationFiled: January 16, 2017Publication date: June 3, 2021Inventors: Frédéric BARBIER, Frédéric MAYER, Pierre FEREYRE
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Publication number: 20200343542Abstract: Electrode for a lithium storage battery, or a lithium battery, including: an active electrode material, made from silicon, a conductive agent, a binder comprising a mixture of two polymers: the first polymer having a first molecular weight, the first polymer being a first polyacrylate or one of its derivatives, the second polymer having a second molecular weight, the second polymer being a second polyacrylate or a carboxymethyl cellulose, or one of their respective derivatives. The first molecular weight is less than or equal to 400,000 g/mol and greater than or equal to 150,000 g/mol. The second molecular weight is greater than or equal to 650,000 g/mol and less than or equal to 4,000,000 g/mol.Type: ApplicationFiled: March 7, 2017Publication date: October 29, 2020Applicants: Commissariat à l'Energie Atomique et aux Eergies Alternatives, UmiCoreInventors: Willy PORCHER, Frédéric BARBIER, Sophie CHAZELLE, Nicolas MARIAGE, Léo MERCHAT
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Patent number: 10798323Abstract: In an active pixel sensor comprising a photodiode Dp, a memory node MN and a readout node SN, the memory node being provided to contain the charge generated by the photodiode at the end of an integration period allowing an integration in global shutter mode and a correlated double sampling, it is envisaged to carry out, in each integration period, at least one transfer {circle around (2)} of charge from the photodiode to the memory node followed by clipping {circle around (3)} of the amount of charge contained in the memory node at an intermediate voltage t1 after the start of the integration period but before a last transfer of charge {circle around (4)} to the memory node at the end of the integration period. The pixels are subsequently read out, row by row, by correlated double sampling CDS.Type: GrantFiled: January 13, 2017Date of Patent: October 6, 2020Assignee: TELEDYNE E2V SEMICONDUCTORS SASInventors: Frédéric Mayer, Frédéric Barbier, Stéphane Gesset
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Patent number: 10587830Abstract: In a sensor comprising active pixels including a photodiode PHD, a memory node MN and a read-out node SN, the memory node being provided to hold the charge generated by the photodiode at the end of an integration period enabling integration in global-shutter mode and a correlated double sampling read-out, provision is made for the charge-storage capacity of the memory node to be at least N times higher than the charge-storage capacity of the photodiode (N being an integer higher than or equal to 2) and provision is made to carry out, in each integration and read-out cycle, during the integration duration Tint(i), N transfers Tri1, Tri2, Tri3 of charge from the photodiode to the memory node, the N transfers being equally distributed over the integration duration. The dynamic range of the sensor is improved under high light levels.Type: GrantFiled: July 29, 2016Date of Patent: March 10, 2020Assignee: TELEDYNE E2V SEMICONDUCTORS SASInventors: Frédéric Mayer, Frédéric Barbier, Stéphane Gesset
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Publication number: 20180367748Abstract: In a sensor comprising active pixels including a photodiode PHD, a memory node MN and a read-out node SN, the memory node being provided to hold the charge generated by the photodiode at the end of an integration period enabling integration in global-shutter mode and a correlated double sampling read-out, provision is made for the charge-storage capacity of the memory node to be at least N times higher than the charge-storage capacity of the photodiode (N being an integer higher than or equal to 2) and provision is made to carry out, in each integration and read-out cycle, during the integration duration Tint(i), N transfers Tri1, Tri2, Tri3 of charge from the photodiode to the memory node, the N transfers being equally distributed over the integration duration. The dynamic range of the sensor is improved under high light levels.Type: ApplicationFiled: July 29, 2016Publication date: December 20, 2018Applicant: Teledyne e2v Semiconductors SASInventors: Frédéric MAYER, Frédéric BARBIER, Stéphane GESSET
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Patent number: 10062725Abstract: The invention concerns active-pixel electronic image sensors. The pixel comprises a photodiode (PH) designed in a semiconductor active layer (12) and maintained at a nil reference potential, and above the active layer an anti-blooming gate (G5) adjacent on one side to the photodiode and on another side to an evacuation drain (22). The sensor comprises means for applying to the anti-blooming gate, during most of the duration of integration, a blocking potential creating beneath the gate a potential barrier of a first height, and, during a series of brief pulses over the duration of integration, an anti-blooming potential creating a potential barrier of a second height, lower than the first. The fact of only applying the anti-blooming voltage during the brief pulses reduces the dark noise induced by tunneling effect by the electric field between gate and photodiode.Type: GrantFiled: February 21, 2014Date of Patent: August 28, 2018Assignee: TELEDYNE E2V SEMICONDUCTORS SASInventors: Frédéric Barbier, Frédéric Mayer
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Patent number: 10044934Abstract: The invention relates to a method for capturing an image in an image sensor with a matrix of rows and columns of active pixels, powered between a first power supply terminal at zero potential (Vss) and a second power supply terminal at a positive power supply potential (Vdd). Each pixel comprises a photodiode and a gate for transferring the photogenerated charges to a charge storage node. A negative potential (VNEG) is applied to the transfer gate by a charge pump during the charge integration time and it receives a transfer control signal (TRA) common to all the pixels during a transfer time window.Type: GrantFiled: March 5, 2015Date of Patent: August 7, 2018Assignee: TELEDYNE E2V SEMICONDUCTORS SASInventor: Frédéric Barbier
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Patent number: 10033363Abstract: The invention proposes a method for distributing a signal to each block Bj of a series of N adjacent blocks of identical design in an electronic circuit. It proposes, in an identical fashion for each of the N blocks, placing a timing delay circuit MUX-DELj on the path for conveying a signal Sc from the input INcj of the block to an internal electrical node Ndj of the block for this signal Sc; providing for the timing delay circuit to supply N delayed signals corresponding to N different timing delays ?f1, . . . ?fj, . . . ?fN separated by an increment of elementary duration ?t that corresponds to the elementary delay ?t for transit of a block introduced into a conductive line; and selecting the delayed signal corresponding to the applicable timing delay according to the block in question, by means of an index signal propagated through the N blocks, and which is incremented or decremented on passage through each block.Type: GrantFiled: December 8, 2015Date of Patent: July 24, 2018Assignee: TELEDYNE E2V SEMICONDUCTORS SASInventors: Bruno Diasparra, Frédéric Barbier
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Patent number: 9998689Abstract: An imaging device includes at least one photosite formed in a semiconducting substrate and fitted with a filtering device for filtering at least one undesired radiation. The filtering device is buried in the semiconducting substrate at a depth depending on the wavelength of the undesired radiation.Type: GrantFiled: December 1, 2014Date of Patent: June 12, 2018Assignees: STMicroelectronics (Grenoble 2) SAS, STMicroelectronics (Rousset) SAS, STMicroelectronics SAInventors: David Coulon, Benoit Deschamps, Frederic Barbier
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Patent number: 9832488Abstract: The invention concerns a test stream generator for generating a compressed video stream for testing a video decoder, the generator including: a context-aware pseudo-random generator (202) adapted to generate pseudo-random values of syntax elements based on decoding context data; a decoding process module (206, 206?) adapted to process the syntax element values and to generate the decoding context data and binarization context data; and a binarizer module (204) adapted to encode the syntax element values based on the binarization context data in order to generate the compressed video stream.Type: GrantFiled: February 26, 2015Date of Patent: November 28, 2017Assignee: Allegro DVTInventors: Sébastien Alaiwan, Frédéric Barbier
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Publication number: 20170331468Abstract: The invention proposes a method for distributing a signal to each block Bj of a series of N adjacent blocks of identical design in an electronic circuit. It proposes, in an identical fashion for each of the N blocks, placing a timing delay circuit MUX-DELj on the path for conveying a signal Sc from the input INcj of the block to an internal electrical node Ndj of the block for this signal Sc; providing for the timing delay circuit to supply N delayed signals corresponding to N different timing delays ?f1 , . . . ?fj, . . . ?fN separated by an increment of elementary duration ?t that corresponds to the elementary delay ?t for transit of a block introduced into a conductive line; and selecting the delayed signal corresponding to the applicable timing delay according to the block in question, by means of an index signal propagated through the N blocks, and which is incremented or decremented on passage through each block.Type: ApplicationFiled: December 8, 2015Publication date: November 16, 2017Inventors: Bruno DIASPARRA, Frédéric BARBIER
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Publication number: 20170041539Abstract: The invention relates to a method for capturing an image in an image sensor with a matrix of rows and columns of active pixels, powered between a first power supply terminal at zero potential (Vss) and a second power supply terminal at a positive power supply potential (Vdd). Each pixel comprises a photodiode and a gate for transferring the photogenerated charges to a charge storage node. A negative potential (VNEG) is applied to the transfer gate by a charge pump during the charge integration time and it receives a transfer control signal (TRA) common to all the pixels during a transfer time window.Type: ApplicationFiled: March 5, 2015Publication date: February 9, 2017Inventor: Frédéric BARBIER
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Publication number: 20160204287Abstract: A method for forming a photovoltaic cell including a stack of at least two semi-conducting layers doped according to opposite types of conductivity, the method including a) forming first patterns made of a first conducting material by printing on at least one of faces of the stack; b) forming second patterns made of an insulating material by printing on the at least one of the faces of the stack, such that the insulating material is in contact with at least one part of lateral surfaces of the first patterns and such that thickness of the second patterns is less than that of the first patterns; and c) forming at least one second conducting material by electrolytic deposition on at least the first patterns.Type: ApplicationFiled: September 3, 2014Publication date: July 14, 2016Applicant: Commissariat a I'energie atomique et aux energies alternativesInventors: Armand BETTINELLI, Frederic BARBIER
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Publication number: 20160005785Abstract: The invention concerns active-pixel electronic image sensors. The pixel comprises a photodiode (PH) designed in a semiconductor active layer (12) and maintained at a nil reference potential, and above the active layer an anti-blooming gate (G5) adjacent on one side to the photodiode and on another side to an evacuation drain (22). The sensor comprises means for applying to the anti-blooming gate, during most of the duration of integration, a blocking potential creating beneath the gate a potential barrier of a first height, and, during a series of brief pulses over the duration of integration, an anti-blooming potential creating a potential barrier of a second height, lower than the first. The fact of only applying the anti-blooming voltage during the brief pulses reduces the dark noise induced by tunnelling effect by the electric field between gate and photodiode.Type: ApplicationFiled: February 21, 2014Publication date: January 7, 2016Applicant: E2V SEMICONDUCTORSInventors: Frédéric BARBIER, Frédéric MAYER
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Patent number: 9191597Abstract: A device for controlling an image sensor including at least one photosensitive cell including a photodiode capable of discharging into a sense node via a first MOS transistor, the sense node being connected to the gate of a second MOS transistor having its source connected to a processing system. The device includes a bias circuit capable of increasing the voltage of the source during the discharge of the photodiode into the sense node.Type: GrantFiled: September 6, 2012Date of Patent: November 17, 2015Assignee: STMicroelectronics S.A.Inventors: Frédéric Barbier, Yvon Cazaux
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Publication number: 20150249844Abstract: The invention concerns a test stream generator for generating a compressed video stream for testing a video decoder, the generator including: a context-aware pseudo-random generator (202) adapted to generate pseudo-random values of syntax elements based on decoding context data; a decoding process module (206, 206?) adapted to process the syntax element values and to generate the decoding context data and binarization context data; and a binarizer module (204) adapted to encode the syntax element values based on the binarization context data in order to generate the compressed video stream.Type: ApplicationFiled: February 26, 2015Publication date: September 3, 2015Applicant: ALLEGRO DVTInventors: Sébastien ALAIWAN, Frédéric BARBIER
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Patent number: 9024240Abstract: An image sensor having a number of pixel zones delimited by isolation trenches, each pixel zone including a photodiode; a transfer gate associated with each of the pixel zones and arranged to transfer charge from the photodiode to a sensing node; and a read circuit for reading a voltage at one of the sensing nodes, the read circuitry including a number of transistors of which at least one is positioned at least partially over a pixel zone of the pixel zones.Type: GrantFiled: January 26, 2011Date of Patent: May 5, 2015Assignees: STMicroelectronics S.A., STMicroelectronics (Crolles 2) SASInventors: François Roy, Frédéric Barbier
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Publication number: 20150083894Abstract: An imaging device includes at least one photosite formed in a semiconducting substrate and fitted with a filtering device for filtering at least one undesired radiation. The filtering device is buried in the semiconducting substrate at a depth depending on the wavelength of the undesired radiation.Type: ApplicationFiled: December 1, 2014Publication date: March 26, 2015Inventors: David Coulon, Benoit Deschamps, Frederic Barbier
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Patent number: 8988570Abstract: A method may include a cycle of reading a current pixel including connecting the capacitive node of the pixel to a capacitive node of a previous pixel already read, connecting the capacitive node of the current pixel and the capacitive node of a previous pixel to an output line, reading a first voltage of the capacitive node of the pixel through the output line, transferring charges from the accumulation node to the capacitive node of the pixel, reading a second voltage of the capacitive node of the pixel through the output line, and disconnecting the capacitive node from the capacitive node of a previous pixel, and a cycle of reading a next pixel. This cycle may include accumulating charges in the accumulation node of the next pixel while the capacitive node of the current pixel is connected to a capacitive node of a previous pixel.Type: GrantFiled: December 11, 2012Date of Patent: March 24, 2015Assignee: STMicroelectronics SAInventor: Frederic Barbier