Patents by Inventor Frédéric Barbier

Frédéric Barbier has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20180367748
    Abstract: In a sensor comprising active pixels including a photodiode PHD, a memory node MN and a read-out node SN, the memory node being provided to hold the charge generated by the photodiode at the end of an integration period enabling integration in global-shutter mode and a correlated double sampling read-out, provision is made for the charge-storage capacity of the memory node to be at least N times higher than the charge-storage capacity of the photodiode (N being an integer higher than or equal to 2) and provision is made to carry out, in each integration and read-out cycle, during the integration duration Tint(i), N transfers Tri1, Tri2, Tri3 of charge from the photodiode to the memory node, the N transfers being equally distributed over the integration duration. The dynamic range of the sensor is improved under high light levels.
    Type: Application
    Filed: July 29, 2016
    Publication date: December 20, 2018
    Applicant: Teledyne e2v Semiconductors SAS
    Inventors: Frédéric MAYER, Frédéric BARBIER, Stéphane GESSET
  • Patent number: 10062725
    Abstract: The invention concerns active-pixel electronic image sensors. The pixel comprises a photodiode (PH) designed in a semiconductor active layer (12) and maintained at a nil reference potential, and above the active layer an anti-blooming gate (G5) adjacent on one side to the photodiode and on another side to an evacuation drain (22). The sensor comprises means for applying to the anti-blooming gate, during most of the duration of integration, a blocking potential creating beneath the gate a potential barrier of a first height, and, during a series of brief pulses over the duration of integration, an anti-blooming potential creating a potential barrier of a second height, lower than the first. The fact of only applying the anti-blooming voltage during the brief pulses reduces the dark noise induced by tunneling effect by the electric field between gate and photodiode.
    Type: Grant
    Filed: February 21, 2014
    Date of Patent: August 28, 2018
    Assignee: TELEDYNE E2V SEMICONDUCTORS SAS
    Inventors: Frédéric Barbier, Frédéric Mayer
  • Patent number: 10044934
    Abstract: The invention relates to a method for capturing an image in an image sensor with a matrix of rows and columns of active pixels, powered between a first power supply terminal at zero potential (Vss) and a second power supply terminal at a positive power supply potential (Vdd). Each pixel comprises a photodiode and a gate for transferring the photogenerated charges to a charge storage node. A negative potential (VNEG) is applied to the transfer gate by a charge pump during the charge integration time and it receives a transfer control signal (TRA) common to all the pixels during a transfer time window.
    Type: Grant
    Filed: March 5, 2015
    Date of Patent: August 7, 2018
    Assignee: TELEDYNE E2V SEMICONDUCTORS SAS
    Inventor: Frédéric Barbier
  • Patent number: 10033363
    Abstract: The invention proposes a method for distributing a signal to each block Bj of a series of N adjacent blocks of identical design in an electronic circuit. It proposes, in an identical fashion for each of the N blocks, placing a timing delay circuit MUX-DELj on the path for conveying a signal Sc from the input INcj of the block to an internal electrical node Ndj of the block for this signal Sc; providing for the timing delay circuit to supply N delayed signals corresponding to N different timing delays ?f1, . . . ?fj, . . . ?fN separated by an increment of elementary duration ?t that corresponds to the elementary delay ?t for transit of a block introduced into a conductive line; and selecting the delayed signal corresponding to the applicable timing delay according to the block in question, by means of an index signal propagated through the N blocks, and which is incremented or decremented on passage through each block.
    Type: Grant
    Filed: December 8, 2015
    Date of Patent: July 24, 2018
    Assignee: TELEDYNE E2V SEMICONDUCTORS SAS
    Inventors: Bruno Diasparra, Frédéric Barbier
  • Patent number: 9998689
    Abstract: An imaging device includes at least one photosite formed in a semiconducting substrate and fitted with a filtering device for filtering at least one undesired radiation. The filtering device is buried in the semiconducting substrate at a depth depending on the wavelength of the undesired radiation.
    Type: Grant
    Filed: December 1, 2014
    Date of Patent: June 12, 2018
    Assignees: STMicroelectronics (Grenoble 2) SAS, STMicroelectronics (Rousset) SAS, STMicroelectronics SA
    Inventors: David Coulon, Benoit Deschamps, Frederic Barbier
  • Patent number: 9832488
    Abstract: The invention concerns a test stream generator for generating a compressed video stream for testing a video decoder, the generator including: a context-aware pseudo-random generator (202) adapted to generate pseudo-random values of syntax elements based on decoding context data; a decoding process module (206, 206?) adapted to process the syntax element values and to generate the decoding context data and binarization context data; and a binarizer module (204) adapted to encode the syntax element values based on the binarization context data in order to generate the compressed video stream.
    Type: Grant
    Filed: February 26, 2015
    Date of Patent: November 28, 2017
    Assignee: Allegro DVT
    Inventors: Sébastien Alaiwan, Frédéric Barbier
  • Publication number: 20170331468
    Abstract: The invention proposes a method for distributing a signal to each block Bj of a series of N adjacent blocks of identical design in an electronic circuit. It proposes, in an identical fashion for each of the N blocks, placing a timing delay circuit MUX-DELj on the path for conveying a signal Sc from the input INcj of the block to an internal electrical node Ndj of the block for this signal Sc; providing for the timing delay circuit to supply N delayed signals corresponding to N different timing delays ?f1 , . . . ?fj, . . . ?fN separated by an increment of elementary duration ?t that corresponds to the elementary delay ?t for transit of a block introduced into a conductive line; and selecting the delayed signal corresponding to the applicable timing delay according to the block in question, by means of an index signal propagated through the N blocks, and which is incremented or decremented on passage through each block.
    Type: Application
    Filed: December 8, 2015
    Publication date: November 16, 2017
    Inventors: Bruno DIASPARRA, Frédéric BARBIER
  • Publication number: 20170041539
    Abstract: The invention relates to a method for capturing an image in an image sensor with a matrix of rows and columns of active pixels, powered between a first power supply terminal at zero potential (Vss) and a second power supply terminal at a positive power supply potential (Vdd). Each pixel comprises a photodiode and a gate for transferring the photogenerated charges to a charge storage node. A negative potential (VNEG) is applied to the transfer gate by a charge pump during the charge integration time and it receives a transfer control signal (TRA) common to all the pixels during a transfer time window.
    Type: Application
    Filed: March 5, 2015
    Publication date: February 9, 2017
    Inventor: Frédéric BARBIER
  • Publication number: 20160204287
    Abstract: A method for forming a photovoltaic cell including a stack of at least two semi-conducting layers doped according to opposite types of conductivity, the method including a) forming first patterns made of a first conducting material by printing on at least one of faces of the stack; b) forming second patterns made of an insulating material by printing on the at least one of the faces of the stack, such that the insulating material is in contact with at least one part of lateral surfaces of the first patterns and such that thickness of the second patterns is less than that of the first patterns; and c) forming at least one second conducting material by electrolytic deposition on at least the first patterns.
    Type: Application
    Filed: September 3, 2014
    Publication date: July 14, 2016
    Applicant: Commissariat a I'energie atomique et aux energies alternatives
    Inventors: Armand BETTINELLI, Frederic BARBIER
  • Publication number: 20160005785
    Abstract: The invention concerns active-pixel electronic image sensors. The pixel comprises a photodiode (PH) designed in a semiconductor active layer (12) and maintained at a nil reference potential, and above the active layer an anti-blooming gate (G5) adjacent on one side to the photodiode and on another side to an evacuation drain (22). The sensor comprises means for applying to the anti-blooming gate, during most of the duration of integration, a blocking potential creating beneath the gate a potential barrier of a first height, and, during a series of brief pulses over the duration of integration, an anti-blooming potential creating a potential barrier of a second height, lower than the first. The fact of only applying the anti-blooming voltage during the brief pulses reduces the dark noise induced by tunnelling effect by the electric field between gate and photodiode.
    Type: Application
    Filed: February 21, 2014
    Publication date: January 7, 2016
    Applicant: E2V SEMICONDUCTORS
    Inventors: Frédéric BARBIER, Frédéric MAYER
  • Patent number: 9191597
    Abstract: A device for controlling an image sensor including at least one photosensitive cell including a photodiode capable of discharging into a sense node via a first MOS transistor, the sense node being connected to the gate of a second MOS transistor having its source connected to a processing system. The device includes a bias circuit capable of increasing the voltage of the source during the discharge of the photodiode into the sense node.
    Type: Grant
    Filed: September 6, 2012
    Date of Patent: November 17, 2015
    Assignee: STMicroelectronics S.A.
    Inventors: Frédéric Barbier, Yvon Cazaux
  • Publication number: 20150249844
    Abstract: The invention concerns a test stream generator for generating a compressed video stream for testing a video decoder, the generator including: a context-aware pseudo-random generator (202) adapted to generate pseudo-random values of syntax elements based on decoding context data; a decoding process module (206, 206?) adapted to process the syntax element values and to generate the decoding context data and binarization context data; and a binarizer module (204) adapted to encode the syntax element values based on the binarization context data in order to generate the compressed video stream.
    Type: Application
    Filed: February 26, 2015
    Publication date: September 3, 2015
    Applicant: ALLEGRO DVT
    Inventors: Sébastien ALAIWAN, Frédéric BARBIER
  • Patent number: 9024240
    Abstract: An image sensor having a number of pixel zones delimited by isolation trenches, each pixel zone including a photodiode; a transfer gate associated with each of the pixel zones and arranged to transfer charge from the photodiode to a sensing node; and a read circuit for reading a voltage at one of the sensing nodes, the read circuitry including a number of transistors of which at least one is positioned at least partially over a pixel zone of the pixel zones.
    Type: Grant
    Filed: January 26, 2011
    Date of Patent: May 5, 2015
    Assignees: STMicroelectronics S.A., STMicroelectronics (Crolles 2) SAS
    Inventors: François Roy, Frédéric Barbier
  • Publication number: 20150083894
    Abstract: An imaging device includes at least one photosite formed in a semiconducting substrate and fitted with a filtering device for filtering at least one undesired radiation. The filtering device is buried in the semiconducting substrate at a depth depending on the wavelength of the undesired radiation.
    Type: Application
    Filed: December 1, 2014
    Publication date: March 26, 2015
    Inventors: David Coulon, Benoit Deschamps, Frederic Barbier
  • Patent number: 8988570
    Abstract: A method may include a cycle of reading a current pixel including connecting the capacitive node of the pixel to a capacitive node of a previous pixel already read, connecting the capacitive node of the current pixel and the capacitive node of a previous pixel to an output line, reading a first voltage of the capacitive node of the pixel through the output line, transferring charges from the accumulation node to the capacitive node of the pixel, reading a second voltage of the capacitive node of the pixel through the output line, and disconnecting the capacitive node from the capacitive node of a previous pixel, and a cycle of reading a next pixel. This cycle may include accumulating charges in the accumulation node of the next pixel while the capacitive node of the current pixel is connected to a capacitive node of a previous pixel.
    Type: Grant
    Filed: December 11, 2012
    Date of Patent: March 24, 2015
    Assignee: STMicroelectronics SA
    Inventor: Frederic Barbier
  • Patent number: 8921753
    Abstract: An imaging element includes a photosensor and a transfer transistor to transfer electrical charges from the photosensor to a charge accumulation node. A selector is configured to receive at least two logic selection signals and to supply an activation signal, which is a function of the selection signals, to a control terminal of the transfer transistor. The selector is configured to receive at least two selection signals, each having a positive voltage when it is at a logic value 1 and a negative voltage when it is a logic value 0, and to supply the activation signal having a negative voltage when the imaging element is not selected.
    Type: Grant
    Filed: April 26, 2012
    Date of Patent: December 30, 2014
    Assignee: STMicroelectronics SA
    Inventor: Frederic Barbier
  • Patent number: 8901692
    Abstract: An imaging device includes at least one photosite formed in a semiconducting substrate and fitted with a filtering device for filtering at least one undesired radiation. The filtering device is buried in the semiconducting substrate at a depth depending on the wavelength of the undesired radiation.
    Type: Grant
    Filed: December 12, 2011
    Date of Patent: December 2, 2014
    Assignees: STMicroelectronics (Grenoble 2) SAS, STMicroelectronics (Rousset) SAS, STMicroelectronics SA
    Inventors: David Coulon, Benoit Deschamps, Frédéric Barbier
  • Patent number: 8853755
    Abstract: A pixel circuit of an image sensor includes a sense node for storing a charge transferred from one or more photodiodes, a source follower transistor having its gate coupled to the sense node and its source node coupled to an output line of the pixel circuit via a read transistor, wherein a body contact of the source follower transistor is connected to the output line.
    Type: Grant
    Filed: September 24, 2010
    Date of Patent: October 7, 2014
    Assignees: STMicroelectronics SA, STMicroelectronics (Crolles 2) SAS
    Inventors: Frédéric Barbier, François Roy
  • Patent number: 8802487
    Abstract: Stencil for a screen-printing system, comprising slits (22, 23) in a central printing zone (13), forming a pattern to be printed, characterized in that it comprises one or more apertures (32) in a peripheral deforming zone (14), which apertures are intended to cause this peripheral deforming zone (14) to deform under the effect of a stress applied to the stencil while reducing deformation of the central printing one (13).
    Type: Grant
    Filed: February 3, 2012
    Date of Patent: August 12, 2014
    Assignee: Commissariat a l'energie Atomique et aux Energies Alternatives
    Inventors: Armand Bettinelli, Frédéric Barbier
  • Patent number: 8791401
    Abstract: A method for controlling a pixel may include first and second photosites, each having a photodiode and a charge-transfer transistor, a read node, and an electronic read element, all of which are common to all the photosites. The method may include an accumulation of photogenerated charges in the photodiode of the first photosite during a first period, an accumulation of photogenerated charges in the photodiode of the second photosite during a second period shorter than the first period, a selection of the signal corresponding to the quantity of charges accumulated in the photodiode of a photosite having the highest unsaturated intensity or else a saturation signal, and a digitization of the selected signal.
    Type: Grant
    Filed: May 31, 2012
    Date of Patent: July 29, 2014
    Assignees: STMicroelectronics (Crolles 2) SAS, STMicroelectronics SA
    Inventors: Frederic Barbier, Frederic Lalanne