Patents by Inventor François De Crecy
François De Crecy has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10320097Abstract: An electrical connector allowing a connection between two substantially facing electrical contacts respectively pertaining to a housing and a support, and including a main body including a first end for secure connection thereof to the housing and a second end for secure connection thereof to the support, the main body being bent in at least one bending area.Type: GrantFiled: August 5, 2015Date of Patent: June 11, 2019Assignee: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVESInventors: Francois De Crecy, Bernard Diem, Christine Ferrandon, Thierry Hilt
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Publication number: 20170222340Abstract: An electrical connector allowing a connection between two substantially facing electrical contacts respectively pertaining to a housing and a support, and including a main body including a first end for secure connection thereof to the housing and a second end for secure connection thereof to the support, the main body being bent in at least one bending area.Type: ApplicationFiled: August 5, 2015Publication date: August 3, 2017Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVESInventors: Francois DE CRECY, Bernard DIEM, Christine FERRANDON, Thierry HILT
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Patent number: 8583403Abstract: A method for the determination of the diffusion tensor anisotropy or the surface energy anisotropy that does not require the formation of particular structures, and that is capable of being performed in cases of moderate-amplitude perturbations. The invention relates to measuring the temporal evolution of natural or artificial roughnesses, and analyzing the results in the firm of the 2D power spectral density for moderate-amplitude perturbations typically characterized by amplitude/wavelength ratios of the perturbation for a spatially defined perturbation having two wavelengths along two orthogonal directions, the ratios typically being less than 0.3.Type: GrantFiled: April 30, 2009Date of Patent: November 12, 2013Assignee: Commissariat a l'Energie AtomiqueInventors: Francois De Crecy, Jean-Charles Barbe, Daniel Girardeau-Montaut
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Patent number: 8236698Abstract: The invention relates to a method for forming microcavities (118) of different depths in a layer (102) based on at least an amorphous or monocrystalline material, comprising at least the following steps in which: at least one shaft and/or trench is formed in the layer (102) so as to extend through one face (101) thereof, such that two sections of the shaft and/or the trench, in two different planes parallel to the face (101), are aligned in relation to one another along an alignment axis forming a non-zero angle with a normal to the plane of said face (101); and the layer (102) is annealed in a hydrogenated atmosphere so as to transform the shaft and/or trench into at least two microcavities (118).Type: GrantFiled: December 20, 2007Date of Patent: August 7, 2012Assignee: Commissariat a l'Energie AtomiqueInventors: Jean-Charles Barbe, Erwan Dornel, François De Crecy, Joël Eymery
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Patent number: 8195420Abstract: The invention relates to the field of micro- and nanotechnologies. In these techniques, it is sometimes necessary to glue several structures face to face and it is important to be able to check the alignment of the structures. A new method for measuring alignment, which comprises the following operations, is proposed for this purpose: activation of a heating element placed on the surface of the first structure, generation of electronic signals representative of a distribution of temperatures, on the basis of an array of temperature sensitive elements placed on the surface of the second structure, determination of a relative position of the heating element with respect to the array of sensitive elements, therefore of the first structure with respect to the second, on the basis of the distribution of temperatures, in a calculation circuit receiving the electronic signals engendered in the array of sensitive elements.Type: GrantFiled: August 21, 2009Date of Patent: June 5, 2012Assignee: Comissariat a l'EnergieInventor: Francois De Crecy
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Patent number: 7985632Abstract: A method for forming a wire in a layer based on a monocrystalline or amorphous material. The method forms two trenches in the layer, crossing through one face of the layer, separated from each other by one portion of the layer, by an etching of the layer on which is arranged an etching mask, and anneals, under hydrogenated atmosphere, the layer, the etching mask being maintained on the layer during the annealing. The depths and widths of the sections of the two trenches, and the width of a section of the portion of the layer, are such that the annealing eliminates a part of the portion of the layer, the two trenches then forming a single trench in which a remaining part of the portion of the layer forms the wire.Type: GrantFiled: December 20, 2007Date of Patent: July 26, 2011Assignee: Commissariat a l'Energie AtomiqueInventors: Jean-Charles Barbe, Erwan Dornel, Francois De Crecy, Joel Eymery
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Publication number: 20100230674Abstract: The invention relates to a method for forming microcavities (118) of different depths in a layer (102) based on at least an amorphous or monocrystalline material, comprising at least the following steps in which: at least one shaft and/or trench is formed in the layer (102) so as to extend through one face (101) thereof, such that two sections of the shaft and/or the trench, in two different planes parallel to the face (101), are aligned in relation to one another along an alignment axis forming a non-zero angle with a normal to the plane of said face (101); and the layer (102) is annealed in a hydrogenated atmosphere so as to transform the shaft and/or trench into at least two microcavities (118).Type: ApplicationFiled: December 20, 2007Publication date: September 16, 2010Applicant: COMMISSARIATE A L'ENERGIE ATOMIQUEInventors: Jean-Charles Barbe, Erwan Dornel, Francois De Crecy, Joel Eymery
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Patent number: 7713850Abstract: Method for forming a structure provided with at least one zone of one or several semiconductor nanocrystals (13). It consists in: exposing with a beam of electrons (11) at least one zone (12) of a semiconductor film (1) lying on an electrically insulating support (2), the exposed zone (12) contributing to defining at least one dewetting zone (10) of the film (1), annealing the film (1) at high temperature in such a way that the dewetting zone (10) retracts giving the zone of one or several nanocrystals (13).Type: GrantFiled: July 19, 2005Date of Patent: May 11, 2010Assignee: Commissariat A l'Energie AtomiqueInventors: Maud Vinet, Jean-Charles Barbe, Pierre Mur, François De Crecy
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Publication number: 20100049467Abstract: The invention relates to the field of micro- and nanotechnologies. In these techniques, it is sometimes necessary to glue several structures face to face and it is important to be able to check the alignment of the structures. A new method for measuring alignment, which comprises the following operations, is proposed for this purpose: activation of a heating element placed on the surface of the first structure, generation of electronic signals representative of a distribution of temperatures, on the basis of an array of temperature sensitive elements placed on the surface of the second structure, determination of a relative position of the heating element with respect to the array of sensitive elements, therefore of the first structure with respect to the second, on the basis of the distribution of temperatures, in a calculation circuit receiving the electronic signals engendered in the array of sensitive elements.Type: ApplicationFiled: August 21, 2009Publication date: February 25, 2010Applicant: Commissariat a L'Energie AtomiqueInventor: François De Crecy
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Publication number: 20100047973Abstract: A method for forming a wire in a layer based on a monocrystalline or amorphous material. The method forms two trenches in the layer, crossing through one face of the layer, separated from each other by one portion of the layer, by an etching of the layer on which is arranged an etching mask, and anneals, under hydrogenated atmosphere, the layer, the etching mask being maintained on the layer during the annealing. The depths and widths of the sections of the two trenches, and the width of a section of the portion of the layer, are such that the annealing eliminates a part of the portion of the layer, the two trenches then forming a single trench in which a remaining part of the portion of the layer forms the wire.Type: ApplicationFiled: December 20, 2007Publication date: February 25, 2010Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUEInventors: Jean-Charles Barbe, Erwan Dornel, Francois De Crecy, Joel Eymery
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Publication number: 20100010788Abstract: The invention relates to a method of interpolating technical data from simulations used to construct a training base comprising technical data vectors Xi, for i varying from 1 to n, each vector presenting components xi(k), for k varying from 1 to d, wherein the metamodel is a multidimensional pseudo-cubic thin plate type interpolation or quasi-interpolation spline having an analytic function ƒ(X): f ? ( X ) = ? i = 1 n ? ? i ? ? X - X i ? 3 + ? k = 1 d ? ? k ? x ( k ) + ? o ? X - X i ? 2 = ? k = 1 d ? dil k 2 ( x ( k ) - x i ( k ) ? k ) 2 ?k designating the standard deviation of the kth components Xi(k) of the vectors Xi and dilk designating the scale expansion associated with said kth component; ?i and ?k being the solutions of a symmetrical linear system of dimension (n+d+1)2: ? j = 1 n ? ? j · ? X j - X i ? 3 + ? i ? ? ? ? i + ? k = 1 d ? ? k · x i ( k ) + ? o =Type: ApplicationFiled: July 6, 2009Publication date: January 14, 2010Inventor: Francois De Crecy
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Publication number: 20090276181Abstract: The invention relates to a method for the determination of the diffusion tensor anisotropy or the surface energy anisotropy that does not require the formation of particular structures, and enables this type of determination to be performed in the case of moderate-amplitude perturbations. The invention is based on measuring the temporal evolution of natural or artificial roughnesses and on analyzing the results in the form of the 2D power spectral density for moderate-amplitude perturbations typically characterized by amplitude/wavelength ratios of the perturbation for a spatially defined perturbation having two wavelengths along two orthogonal directions, said ratios typically being less than 0.3.Type: ApplicationFiled: April 30, 2009Publication date: November 5, 2009Applicant: Commissariat A L'Energie AtomiqueInventors: Francois De Crecy, Jean-Charles Barbe, Daniel Girardeau-Montaut
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Patent number: 7572053Abstract: A tightness testing method for a MEMS or small encapsulated component, the MEMS or small component being housed in a cavity of a carrier. The cavity being sealed and containing a gas having a different density to the density it would have if subjected to the pressure of the medium outside the cavity. The method measures the density of the gas contained in the cavity.Type: GrantFiled: June 29, 2005Date of Patent: August 11, 2009Assignee: Commissariat a l'Energie AtomiqueInventors: Francois De Crecy, Bernard Diem
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Publication number: 20070234782Abstract: A tightness testing method for a MEMS or small encapsulated component, the MEMS or small component being housed in a cavity of a carrier. The cavity being sealed and containing a gas having a different density to the density it would have if subjected to the pressure of the medium outside the cavity. The method measures the density of the gas contained in the cavity.Type: ApplicationFiled: June 29, 2005Publication date: October 11, 2007Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUEInventors: Francois De Crecy, Bernard Diem
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Publication number: 20060019459Abstract: Method for forming a structure provided with at least one zone of one or several semiconductor nanocrystals (13). It consists in: exposing with a beam of electrons (11) at least one zone (12) of a semiconductor film (1) lying on an electrically insulating support (2), the exposed zone (12) contributing to defining at least one dewetting zone (10) of the film (1), annealing the film (1) at high temperature in such a way that the dewetting zone (10) retracts giving the zone of one or several nanocrystals (13).Type: ApplicationFiled: July 19, 2005Publication date: January 26, 2006Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUEInventors: Maud Vinet, Jean-Charles Barbe, Pierre Mur, Francois De Crecy
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Publication number: 20040170879Abstract: A fuel cell comprises a thermal dissipation structure whose connecting element (8) is a shape memory alloy highly conductive at high temperatures, but much less so at low temperatures, which allows the cell to heat up quicker and reach its performance level.Type: ApplicationFiled: January 9, 2004Publication date: September 2, 2004Inventors: Jean-Yves Laurent, Didier Marsacq, Francis Ternay, Francois De Crecy
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Publication number: 20040028170Abstract: The invention relates to a storage installation for irradiated fuel or radioactive materials comprising:Type: ApplicationFiled: March 17, 2003Publication date: February 12, 2004Inventor: Francois De Crecy