Patents by Inventor Francisco A. Cano

Francisco A. Cano has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 6363516
    Abstract: In deep submicron technologies, coupling capacitance significantly dominates the total parasitic capacitance. This causes crosstalk noise to be induced on quiescent signals which could lead to catastrophic failures. A method is provided for extracting parasitic data in a hierarchical manner from a trial layout of the integrated circuit. Intracellular parasitic data representative each cell type used in the integrated circuit is extracted only once, regardless of the number of times the cell is instantiated in the integrated circuit. For each instance of each cell, a portion of intercell signal lines that are routed over that instance of the cell are cut out in cookie cutter fashion by specifying an area in the trial layout corresponding to the instance of the cell such that the portion of intercell signal lines within the area can be processed apart from the remaining portion of the intercell signal lines.
    Type: Grant
    Filed: November 12, 1999
    Date of Patent: March 26, 2002
    Assignee: Texas Instruments Incorporated
    Inventors: Francisco A. Cano, Nagaraj N. Savithri, Vijaya Gunturi
  • Publication number: 20020013931
    Abstract: An integrated circuit 210 has a power grid formed from a first set of power buses 201a and 202a on a metal interconnect level M1, a second set of power buses 203a and 204a on interconnect level M4, and a third set of power buses 205a and 206a on inter-connect level M5. The set of power buses on level M4 are oriented in the same direction as the set of power buses on level M1, and both sets of buses are located coincidentally. A high power logic cell 220 is pre-defined with a set of M1-M4 power vias 221 and 222 so that logic cell 220 can be positioned in a horizontal row unconstrained by pre-positioned M1-M4 power vias. Dummy cell 230 with M1-M4 power vias is positioned as needed so as not to exceed a maximum strapping distance D1. A maximum value for distance D1 is selected based on dynamic power requirements of nearby logic cells 250a-n as determined by simulation. A method for designing and fabricating integrated circuit 210 is described.
    Type: Application
    Filed: October 2, 2001
    Publication date: January 31, 2002
    Inventors: Francisco A. Cano, David A. Thomas, Clive Bittlestone
  • Patent number: 6308307
    Abstract: An integrated circuit 210 has a power grid formed from a first set of power buses 201a and 202a on a metal interconnect level M1, a second set of power buses 203a and 204a on interconnect level M4, and a third set of power buses 205a and 206a on inter-connect level M5. The set of power buses on level M4 are oriented in the same direction as the set of power buses on level M1, and both sets of buses are located coincidentally. A high power logic cell 220 is pre-defined with a set of M1-M4 power vias 221 and 222 so that logic cell 220 can be positioned in a horizontal row unconstrained by pre-positioned M1-M4 power vias. Dummy cell 230 with M1-M4 power vias is positioned as needed so as not to exceed a maximum strapping distance D1. A maximum value for distance D1 is selected based on dynamic power requirements of nearby logic cells 250a-n as determined by simulation. A method for designing and fabricating integrated circuit 210 is described.
    Type: Grant
    Filed: January 29, 1999
    Date of Patent: October 23, 2001
    Assignee: Texas Instruments Incorporated
    Inventors: Francisco A. Cano, David A. Thomas, Clive Bittlestone
  • Patent number: 6253359
    Abstract: A method for designing and fabricating an integrated circuit is described. An increase or a decrease in a total propagation delay time 311 of a signal on a victim net 203 is accurately modeled using a modified decoupled simulation model 300. Victim net 203 is modeled as a distributed capacitor 320a-c that has a total value equal to Cgnd+2*K*Ccoup. A match propagation delay time which includes a variation in propagation delay caused by signal coupling from aggressor nets located adjacent to the victim net is determined by simulating a representative circuit using a coupled distributed load simulation model to accurately determine the match propagation delay time. K is determined using an equation in which K=1+(match delay−unmodified delay)/(2*R*Ccoup). R is the effective drive resistance of a buffer which drives the victim net and associated signal trace resistance.
    Type: Grant
    Filed: January 29, 1999
    Date of Patent: June 26, 2001
    Assignee: Texas Instruments Incorporated
    Inventors: Francisco A. Cano, Nagaraj N. Savithri, Deepak Kapoor
  • Patent number: 6038383
    Abstract: A method for designing and fabricating an integrated circuit is disclosed. Signal line interconnect widths are determined by performing an electromigration analysis on a trial layout of the integrated circuit. A representative circuit for an integrated circuit is designed and a trial layout is created that includes a plurality of nets. A preprocessor 505 eliminates nets that do not need further validation. An extraction process 510 generates an RC network representation of each remaining net that is to be validated to form a distributed load simulation model. Distributed capacitance and resistance of signal lines is included with load capacitance of receivers to provide an accurate profile of current flow. A profile of current flowing in the signal line of each net is determined by simulating the operation of each net using simulator 517. Peak current, RMS current and average current is determined.
    Type: Grant
    Filed: October 13, 1997
    Date of Patent: March 14, 2000
    Assignee: Texas Instruments Incorporated
    Inventors: Duane J. Young, Francisco A. Cano, Nagaraj N Savithri, Haldun Haznedar
  • Patent number: 5835421
    Abstract: A method and apparatus for reducing failures due to bit line coupling and reducing power consumption in a memory (10). The method comprises precharging a first group of bitlines (22) to a first voltage level. Other bit lines (22) are maintained at a second voltage level. After data has been read from the memory (10), the first group of bit lines (22) is discharged to the second voltage level.
    Type: Grant
    Filed: November 8, 1996
    Date of Patent: November 10, 1998
    Assignee: Texas Instruments Incorporated
    Inventors: Luat Q. Pham, Francisco A. Cano
  • Patent number: 5745421
    Abstract: A method and apparatus are disclosed for self-timing the precharge of bit lines (22) in a memory array. A reference column bit line (26) is charged to create a reference column voltage. The bit lines (22) in the memory array (12) are precharged until the reference voltage exceeds a first threshold.
    Type: Grant
    Filed: November 8, 1996
    Date of Patent: April 28, 1998
    Assignee: Texas Instruments Incorporated
    Inventors: Luat Q. Pham, Francisco A. Cano