Abstract: In the measurement of properties of a wafer substrate, such as Critical Dimension or overlay a sampling plan is produced defined for measuring a property of a substrate, wherein the sampling plan comprises a plurality of sub-sampling plans. The sampling plan may be constrained to a predetermined fixed number of measurement points and is used to control an inspection apparatus to perform a plurality of measurements of the property of a plurality of substrates using different sub-sampling plans for respective substrates, optionally, the results are stacked to at least partially recompose the measurement results according to the sample plan.

Abstract: In the measurement of properties of a wafer substrate, such as Critical Dimension or overlay a sampling plan is produced defined for measuring a property of a substrate, wherein the sampling plan comprises a plurality of sub-sampling plans. The sampling plan may be constrained to a predetermined fixed number of measurement points and is used to control an inspection apparatus to perform a plurality of measurements of the property of a plurality of substrates using different sub-sampling plans for respective substrates, optionally, the results are stacked to at least partially recompose the measurement results according to the sample plan.

Abstract: In the measurement of properties of a wafer substrate, such as Critical Dimension or overlay a sampling plan is produced defined for measuring a property of a substrate, wherein the sampling plan comprises a plurality of sub-sampling plans. The sampling plan may be constrained to a predetermined fixed number of measurement points and is used to control an inspection apparatus to perform a plurality of measurements of the property of a plurality of substrates using different sub-sampling plans for respective substrates, optionally, the results are stacked to at least partially recompose the measurement results according to the sample plan.

Abstract: In the measurement of properties of a wafer substrate, such as Critical Dimension or overlay a sampling plan is produced 2506 defined for measuring a property of a substrate, wherein the sampling plan comprises a plurality of sub-sampling plans. The sampling plan may be constrained to a predetermined fixed number of measurement points and is used 2508 to control an inspection apparatus to perform a plurality of measurements of the property of a plurality of substrates using different sub-sampling plans for respective substrates, optionally, the results are stacked 2510 to at least partially recompose the measurement results according to the sample plan.

Abstract: In the measurement of properties of a wafer substrate, such as Critical Dimension or overlay a sampling plan is produced 2506 defined for measuring a property of a substrate, wherein the sampling plan comprises a plurality of sub-sampling plans. The sampling plan may be constrained to a predetermined fixed number of measurement points and is used 2508 to control an inspection apparatus to perform a plurality of measurements of the property of a plurality of substrates using different sub-sampling plans for respective substrates, optionally, the results are stacked 2510 to at least partially recompose the measurement results according to the sample plan.

Abstract: In the measurement of properties of a wafer substrate, such as Critical Dimension or overlay a sampling plan is produced 2506 defined for measuring a property of a substrate, wherein the sampling plan comprises a plurality of sub-sampling plans. The sampling plan may be constrained to a predetermined fixed number of measurement points and is used 2508 to control an inspection apparatus to perform a plurality of measurements of the property of a plurality of substrates using different sub-sampling plans for respective substrates, optionally, the results are stacked 2510 to at least partially recompose the measurement results according to the sample plan.

Abstract: In the measurement of properties of a wafer substrate, such as Critical Dimension or overlay a sampling plan is produced 2506 defined for measuring a property of a substrate, wherein the sampling plan comprises a plurality of sub-sampling plans. The sampling plan may be constrained to a predetermined fixed number of measurement points and is used 2508 to control an inspection apparatus to perform a plurality of measurements of the property of a plurality of substrates using different sub-sampling plans for respective substrates, optionally, the results are stacked 2510 to at least partially recompose the measurement results according to the sample plan.

Abstract: In the measurement of properties of a wafer substrate, such as Critical Dimension or overlay a sampling plan is produced (2506) defined for measuring a property of a substrate, wherein the sampling plan comprises a plurality of sub-sampling plans. The sampling plan may be constrained to a predetermined fixed number of measurement points and is used (2508) to control an inspection apparatus to perform a plurality of measurements of the property of a plurality of substrates using different sub-sampling plans for respective substrates, optionally, the results are stacked (2510) to at least partially recompose the measurement results according to the sample plan.

Abstract: In the measurement of properties of a wafer substrate, such as Critical Dimension or overlay a sampling plan is produced (2506) defined for measuring a property of a substrate, wherein the sampling plan comprises a plurality of sub-sampling plans. The sampling plan may be constrained to a predetermined fixed number of measurement points and is used (2508) to control an inspection apparatus to perform a plurality of measurements of the property of a plurality of substrates using different sub-sampling plans for respective substrates, optionally, the results are stacked (2510) to at least partially recompose the measurement results according to the sample plan.

Abstract: A lithographic apparatus has a plurality of different alignment arrangements that are used to perform an alignment measurement on the same mark(s) by: detecting a first alignment mark located on an object and producing a first alignment signal by a first detector; detecting the first mark and producing a second alignment signal by a second detector using a different alignment measurement than the first detector; receiving the first alignment signal from the first detector; calculating a first position of the at least first mark based on the first alignment signal; receiving the second alignment signal from the second detector; calculating a further first position of the at least first mark based on the second alignment signal.

Abstract: An alignment system for a lithographic apparatus has a source of alignment radiation; a detection system that has a first detector channel and a second detector channel; and a position determining unit in communication with the detection system. The position determining unit is constructed to process information from said first and second detector channels in a combination to determine a position of an alignment mark on a work piece, the combination taking into account a manufacturing process of the work piece. A lithographic apparatus has the above mentioned alignment system. Methods of alignment and manufacturing devices with a lithographic apparatus use the above alignment system and lithographic apparatus, respectively.

Abstract: A lithographic apparatus has a plurality of different alignment arrangements that are used to perform an alignment measurement on the same mark(s) by: detecting a first alignment mark located on an object and producing a first alignment signal by a first detector; detecting the first mark and producing a second alignment signal by a second detector using a different alignment measurement than the first detector; receiving the first alignment signal from the first detector; calculating a first position of the at least first mark based on the first alignment signal; receiving the second alignment signal from the second detector; calculating a further first position of the at least first mark based on the second alignment signal.

Abstract: A lithographic apparatus has a plurality of different alignment arrangements that are used to perform an alignment measurement on the same mark(s) by: detecting a first alignment mark located on an object and producing a first alignment signal by a first detector; detecting the first mark and producing a second alignment signal by a second detector using a different alignment measurement than the first detector; receiving the first alignment signal from the first detector; calculating a first position of the at least first mark based on the first alignment signal; receiving the second alignment signal from the second detector; calculating a further first position of the at least first mark based on the second alignment signal.

Abstract: An alignment system for a lithographic apparatus has a source of alignment radiation; a detection system that has a first detector channel and a second detector channel; and a position determining unit in communication with the detection system. The position determining unit is constructed to process information from said first and second detector channels in a combination to determine a position of an alignment mark on a work piece, the combination taking into account a manufacturing process of the work piece. A lithographic apparatus has the above mentioned alignment system. Methods of alignment and manufacturing devices with a lithographic apparatus use the above alignment system and lithographic apparatus, respectively.

Abstract: A method includes determining relative positional relationships between applied fields on a substrate, one of the applied fields including a first field; in a lithographic apparatus, using an alignment apparatus to obtain at least one absolute positional relationship between the position of at least the first field of the substrate and a part of the lithographic apparatus; and determining an absolute positional relationship between at least one field, other than the first field, and a part of the lithographic apparatus using the relative positional relationships and the at least one obtained absolute relationship.

Abstract: An alignment system for a lithographic apparatus has a source of alignment radiation; a detection system that has a first detector channel and a second detector channel; and a position determining unit in communication with the detection system. The position determining unit is constructed to process information from said first and second detector channels in a combination to determine a position of an alignment mark on a work piece, the combination taking into account a manufacturing process of the work piece. A lithographic apparatus has the above mentioned alignment system. Methods of alignment and manufacturing devices with a lithographic apparatus use the above alignment system and lithographic apparatus, respectively.

Abstract: A system and method are provided for determining an overlay of a first layer N?1 and a second layer N that are positioned one over the other on a substrate. The first layer includes a first overlay portion. The second layer includes a first complementary overlay portion. The first overlay portion and first complementary overlay portion are arranged to form an overlay mark for determining the overlay of the first and second layers. In the second layer a stitching portion and a complementary stitching portion are formed. The stitching portion and complementary stitching portion are arranged to form a stitching mark for determining a stitching overlay between the second layer and an adjacent second layer, with the adjacent second layer being positioned adjacent to the second layer.

Abstract: A lithographic apparatus has a plurality of different alignment arrangements that are used to perform an alignment measurement on the same mark(s) by: detecting a first alignment mark located on an object and producing a first alignment signal by a first detector; detecting the first mark and producing a second alignment signal by a second detector using a different alignment measurement than the first detector; receiving the first alignment signal from the first detector; calculating a first position of the at least first mark based on the first alignment signal; receiving the second alignment signal from the second detector; calculating a further first position of the at least first mark based on the second alignment signal.

Abstract: A system and method are provided for determining an overlay of a first layer N?1 and a second layer N that are positioned one over the other on a substrate. The first layer includes a first overlay portion. The second layer includes a first complementary overlay portion. The first overlay portion and first complementary overlay portion are arranged to form an overlay mark for determining the overlay of the first and second layers. In the second layer a stitching portion and a complementary stitching portion are formed. The stitching portion and complementary stitching portion are arranged to form a stitching mark for determining a stitching overlay between the second layer and an adjacent second layer, with the adjacent second layer being positioned adjacent to the second layer.

Abstract: A system and method are provided for determining an overlay of a first layer N-1 and a second layer N that are positioned one over the other on a substrate. The first layer includes a first overlay portion. The second layer includes a first complementary overlay portion. The first overlay portion and first complementary overlay portion are arranged to form an overlay mark for determining the overlay of the first and second layers. In the second layer a stitching portion and a complementary stitching portion are formed. The stitching portion and complementary stitching portion are arranged to form a stitching mark for determining a stitching overlay between the second layer and an adjacent second layer, with the adjacent second layer being positioned adjacent to the second layer.