Patents by Inventor Francois J. Henley

Francois J. Henley has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11444221
    Abstract: A film of material may be formed by providing a semiconductor substrate having a surface region and a cleave region located at a predetermined depth beneath the surface region. During a process of cleaving the film from the substrate, shear in the cleave region is carefully controlled. According to certain embodiments, an in-plane shear component (KII) is maintained near zero, sandwiched between a tensile region and a compressive region. In one embodiment, cleaving can be accomplished using a plate positioned over the substrate surface. The plate serves to constrain movement of the film during cleaving, and together with a localized thermal treatment reduces shear developed during the cleaving process. According to other embodiments, the KII component is purposefully maintained at a high level and serves to guide and drive fracture propagation through the cleave sequence.
    Type: Grant
    Filed: July 5, 2019
    Date of Patent: September 13, 2022
    Assignee: Silicon Genesis Corporation
    Inventor: Francois J. Henley
  • Patent number: 11380816
    Abstract: Embodiments relate to mass-transfer methods useful for fabricating products containing Light Emitting Diode (LED) structures. LED arrays are transferred from a source substrate to a target substrate by an in-process functional test Known-Good Die (KGD) driven mass-transfer of a plurality of LED devices in a high-speed flexible manner. Certain preferred embodiments using beam-addressed release (BAR) mass-transfer approaches are able to utilize a Known Good Die (KGD) data file of the source substrate in a manner that avoids additional steps, rework and yield losses.
    Type: Grant
    Filed: December 12, 2019
    Date of Patent: July 5, 2022
    Assignee: Apple Inc.
    Inventor: Francois J. Henley
  • Patent number: 11037841
    Abstract: Embodiments relate to functional test methods useful for fabricating products containing Light Emitting Diode (LED) structures. In particular, LED arrays are functionally tested by injecting current via a displacement current coupling device using a field plate comprising of an electrode and insulator placed in close proximity to the LED array. A controlled voltage waveform is then applied to the field plate electrode to excite the LED devices in parallel for high-throughput. A camera records the individual light emission resulting from the electrical excitation to yield a function test of a plurality of LED devices. Changing the voltage conditions can excite the LEDs at differing current density levels to functionally measure external quantum efficiency and other important device functional parameters.
    Type: Grant
    Filed: February 11, 2020
    Date of Patent: June 15, 2021
    Assignee: Apple Inc.
    Inventor: Francois J. Henley
  • Patent number: 10989755
    Abstract: Embodiments relate to functional test methods useful for fabricating products containing Light Emitting Diode (LED) structures. In particular, LED arrays are functionally tested by injecting current via a displacement current coupling device using a field plate comprising of an electrode and insulator placed in close proximity to the LED array. A controlled voltage waveform is then applied to the field plate electrode to excite the LED devices in parallel for high-throughput. A camera records the individual light emission resulting from the electrical excitation to yield a function test of a plurality of LED devices. Changing the voltage conditions can excite the LEDs at differing current density levels to functionally measure external quantum efficiency and other important device functional parameters. Spectral filtering is used to improve measurement contrast and LED defect detection.
    Type: Grant
    Filed: June 18, 2018
    Date of Patent: April 27, 2021
    Assignee: Apple Inc.
    Inventor: Francois J. Henley
  • Patent number: 10978429
    Abstract: Embodiments relate to mass-transfer methods useful for fabricating products containing Light Emitting Diode (LED) structures. LED arrays are transferred from a source substrate to a target substrate by beam-assisted release (BAR) of a plurality of LED devices in a high-speed flexible manner. The BAR mass-transfer approach is also able to utilize a Known Good Die (KGD) data file of the source substrate to transfer only functionally good die and avoid rework and yield losses.
    Type: Grant
    Filed: June 26, 2018
    Date of Patent: April 13, 2021
    Assignee: Apple Inc.
    Inventor: Francois J. Henley
  • Patent number: 10962586
    Abstract: Embodiments relate to functional test methods useful for fabricating products containing Light Emitting Diode (LED) structures. In particular, LED arrays are functionally tested by injecting current via a displacement current coupling device using a field plate comprising of an electrode and insulator placed in close proximity to the LED array. A controlled voltage waveform is then applied to the field plate electrode to excite the LED devices in parallel for high-throughput. A camera records the individual light emission resulting from the electrical excitation to yield a function test of a plurality of LED devices. Changing the voltage conditions can excite the LEDs at differing current density levels to functionally measure external quantum efficiency and other important device functional parameters.
    Type: Grant
    Filed: January 23, 2018
    Date of Patent: March 30, 2021
    Assignee: Apple Inc.
    Inventor: Francois J. Henley
  • Publication number: 20200194616
    Abstract: Embodiments relate to mass-transfer methods useful for fabricating products containing Light Emitting Diode (LED) structures. LED arrays are transferred from a source substrate to a target substrate by an in-process functional test Known-Good Die (KGD) driven mass-transfer of a plurality of LED devices in a high-speed flexible manner. Certain preferred embodiments using beam-addressed release (BAR) mass-transfer approaches are able to utilize a Known Good Die (KGD) data file of the source substrate in a manner that avoids additional steps, rework and yield losses.
    Type: Application
    Filed: December 12, 2019
    Publication date: June 18, 2020
    Inventor: Francois J. HENLEY
  • Patent number: 10683588
    Abstract: A shaped crystalline ingot for an ion cleaving process has a major surface that is substantially planar, a first side face that is substantially planar along a first direction orthogonal to the major surface, and a second side face that is substantially planar along a second direction orthogonal to the major surface. The ion cleaving process is a process in which ions are implanted into the shaped crystalline ingot to form a cleave plane that separates a substrate comprising the major surface from the shaped crystalline ingot.
    Type: Grant
    Filed: September 7, 2018
    Date of Patent: June 16, 2020
    Assignee: Silicon Genesis Corporation
    Inventor: Francois J. Henley
  • Publication number: 20200185283
    Abstract: Embodiments relate to functional test methods useful for fabricating products containing Light Emitting Diode (LED) structures. In particular, LED arrays are functionally tested by injecting current via a displacement current coupling device using a field plate comprising of an electrode and insulator placed in close proximity to the LED array. A controlled voltage waveform is then applied to the field plate electrode to excite the LED devices in parallel for high-throughput. A camera records the individual light emission resulting from the electrical excitation to yield a function test of a plurality of LED devices. Changing the voltage conditions can excite the LEDs at differing current density levels to functionally measure external quantum efficiency and other important device functional parameters.
    Type: Application
    Filed: February 11, 2020
    Publication date: June 11, 2020
    Inventor: Francois J. HENLEY
  • Patent number: 10600697
    Abstract: Embodiments relate to functional test methods useful for fabricating products containing Light Emitting Diode (LED) structures. In particular, LED arrays are functionally tested by injecting current via a displacement current coupling device using a field plate comprising of an electrode and insulator placed in close proximity to the LED array. A controlled voltage waveform is then applied to the field plate electrode to excite the LED devices in parallel for high-throughput. A camera records the individual light emission resulting from the electrical excitation to yield a function test of a plurality of LED devices. Changing the voltage conditions can excite the LEDs at differing current density levels to functionally measure external quantum efficiency and other important device functional parameters.
    Type: Grant
    Filed: December 14, 2017
    Date of Patent: March 24, 2020
    Assignee: Tesoro Scientific, Inc.
    Inventor: Francois J. Henley
  • Publication number: 20190326467
    Abstract: A film of material may be formed by providing a semiconductor substrate having a surface region and a cleave region located at a predetermined depth beneath the surface region. During a process of cleaving the film from the substrate, shear in the cleave region is carefully controlled. According to certain embodiments, an in-plane shear component (KII) is maintained near zero, sandwiched between a tensile region and a compressive region. In one embodiment, cleaving can be accomplished using a plate positioned over the substrate surface. The plate serves to constrain movement of the film during cleaving, and together with a localized thermal treatment reduces shear developed during the cleaving process. According to other embodiments, the KII component is purposefully maintained at a high level and serves to guide and drive fracture propagation through the cleave sequence.
    Type: Application
    Filed: July 5, 2019
    Publication date: October 24, 2019
    Inventor: Francois J. HENLEY
  • Publication number: 20190288158
    Abstract: Embodiments relate to fabricating a wafer including a thin, high-quality single crystal GaN layer serving as a template for formation of additional GaN material. A bulk ingot of GaN material is subjected to implantation to form a subsurface cleave region. The implanted bulk material is bonded to a substrate having lattice and/or Coefficient of Thermal Expansion (CTE) properties compatible with GaN. Examples of such substrate materials can include but are not limited to AlN and Mullite. The GaN seed layer is transferred by a controlled cleaving process from the implanted bulk material to the substrate surface. The resulting combination of the substrate and the GaN seed layer, can form a template for subsequent growth of overlying high quality GaN. Growth of high-quality GaN can take place utilizing techniques such as Liquid Phase Epitaxy (LPE) or gas phase epitaxy, e.g., Metallo-Organic Chemical Vapor Deposition (MOCVD) or Hydride Vapor Phase Epitaxy (HVPE).
    Type: Application
    Filed: December 7, 2018
    Publication date: September 19, 2019
    Applicants: QMAT, Inc., QMAT, Inc.
    Inventor: Francois J. HENLEY
  • Publication number: 20190103507
    Abstract: Embodiments transfer thin layers of material utilized in electronic devices (e.g., GaN for optoelectronic devices), from a donor to a handle substrate. Certain embodiments employ bond-and-release system(s) where release occurs along a cleave plane formed by implantation of particles into the donor. Some embodiments may rely upon release by converting components from solid to liquid under carefully controlled thermal conditions (e.g., solder-based materials and/or thermal decomposition of Indium-containing materials). Some embodiments utilize laser-induced film release processes using epitaxially grown or implanted regions as an optically absorptive region. A single bond-and-release sequence may involve processing an exposed N-face of GaN material. Multiple bond-and-release sequences (involving processing an exposed Ga-face of GaN material) may be employed in series, for example utilizing a temporary handle substrate as an intermediary.
    Type: Application
    Filed: November 13, 2018
    Publication date: April 4, 2019
    Inventors: Francois J. HENLEY, Sien KANG, Mingyu ZHONG, Minghang LI
  • Publication number: 20190024259
    Abstract: Embodiments relate to use of a particle accelerator beam to form thin films of material from a bulk substrate. In particular embodiments, a bulk substrate (e.g. donor substrate) having a top surface is exposed to a beam of accelerated particles. In certain embodiments, this bulk substrate may comprise GaN; in other embodiments this bulk substrate may comprise Si, SiC, or other materials. Then, a thin film or wafer of material is separated from the bulk substrate by performing a controlled cleaving process along a cleave region formed by particles implanted from the beam. In certain embodiments this separated material is incorporated directly into an optoelectronic device, for example a GaN film cleaved from GaN bulk material. In some embodiments, this separated material may be employed as a template for further growth of semiconductor materials (e.g. GaN) that are useful for optoelectronic devices.
    Type: Application
    Filed: July 25, 2018
    Publication date: January 24, 2019
    Inventors: Francois J. HENLEY, Sien KANG, Albert LAMM
  • Patent number: 10186630
    Abstract: Embodiments relate to fabricating a wafer including a thin, high-quality single crystal GaN layer serving as a template for formation of additional GaN material. A bulk ingot of GaN material is subjected to implantation to form a subsurface cleave region. The implanted bulk material is bonded to a substrate having lattice and/or Coefficient of Thermal Expansion (CTE) properties compatible with GaN. Examples of such substrate materials can include but are not limited to AlN and Mullite. The GaN seed layer is transferred by a controlled cleaving process from the implanted bulk material to the substrate surface. The resulting combination of the substrate and the GaN seed layer, can form a template for subsequent growth of overlying high quality GaN. Growth of high-quality GaN can take place utilizing techniques such as Liquid Phase Epitaxy (LPE) or gas phase epitaxy, e.g., Metallo-Organic Chemical Vapor Deposition (MOCVD) or Hydride Vapor Phase Epitaxy (HVPE).
    Type: Grant
    Filed: July 27, 2017
    Date of Patent: January 22, 2019
    Assignee: QMAT, INC.
    Inventor: Francois J. Henley
  • Publication number: 20190017192
    Abstract: A shaped crystalline ingot for an ion cleaving process has a major surface that is substantially planar, a first side face that is substantially planar along a first direction orthogonal to the major surface, and a second side face that is substantially planar along a second direction orthogonal to the major surface. The ion cleaving process is a process in which ions are implanted into the shaped crystalline ingot to form a cleave plane that separates a substrate comprising the major surface from the shaped crystalline ingot.
    Type: Application
    Filed: September 7, 2018
    Publication date: January 17, 2019
    Inventor: Francois J. HENLEY
  • Publication number: 20190004105
    Abstract: Embodiments relate to functional test methods useful for fabricating products containing Light Emitting Diode (LED) structures. In particular, LED arrays are functionally tested by injecting current via a displacement current coupling device using a field plate comprising of an electrode and insulator placed in close proximity to the LED array. A controlled voltage waveform is then applied to the field plate electrode to excite the LED devices in parallel for high-throughput. A camera records the individual light emission resulting from the electrical excitation to yield a function test of a plurality of LED devices. Changing the voltage conditions can excite the LEDs at differing current density levels to functionally measure external quantum efficiency and other important device functional parameters. Spectral filtering is used to improve measurement contrast and LED defect detection.
    Type: Application
    Filed: June 18, 2018
    Publication date: January 3, 2019
    Inventor: Francois J. HENLEY
  • Publication number: 20180374829
    Abstract: Embodiments relate to mass-transfer methods useful for fabricating products containing Light Emitting Diode (LED) structures. LED arrays are transferred from a source substrate to a target substrate by beam-assisted release (BAR) of a plurality of LED devices in a high-speed flexible manner. The BAR mass-transfer approach is also able to utilize a Known Good Die (KGD) data file of the source substrate to transfer only functionally good die and avoid rework and yield losses.
    Type: Application
    Filed: June 26, 2018
    Publication date: December 27, 2018
    Inventor: Francois J. HENLEY
  • Patent number: 10164144
    Abstract: Embodiments transfer thin layers of material utilized in electronic devices (e.g., GaN for optoelectronic devices), from a donor to a handle substrate. Certain embodiments employ bond-and-release system(s) where release occurs along a cleave plane formed by implantation of particles into the donor. Some embodiments may rely upon release by converting components from solid to liquid under carefully controlled thermal conditions (e.g., solder-based materials and/or thermal decomposition of Indium-containing materials). Some embodiments utilize laser-induced film release processes using epitaxially grown or implanted regions as an optically absorptive region. A single bond-and-release sequence may involve processing an exposed N-face of GaN material. Multiple bond-and-release sequences (involving processing an exposed Ga-face of GaN material) may be employed in series, for example utilizing a temporary handle substrate as an intermediary.
    Type: Grant
    Filed: October 13, 2017
    Date of Patent: December 25, 2018
    Assignee: QMAT, Inc.
    Inventors: Francois J. Henley, Sien Kang, Mingyu Zhong, Minghang Li
  • Patent number: 10087551
    Abstract: A method for slicing a crystalline material ingot includes providing a crystalline material boule characterized by a cropped structure including a first end-face, a second end-face, and a length along an axis in a first crystallographic direction extending from the first end-face to the second end-face. The method also includes cutting the crystalline material boule substantially through a first crystallographic plane in parallel to the axis to separate the crystalline material boule into a first portion with a first surface and a second portion with a second surface. The first surface and the second surface are planar surfaces substantially along the first crystallographic plane. The method further includes exposing either the first surface of the first portion or the second surface of the second portion, and performing a layer transfer process to form a crystalline material sheet from either the first surface of the first portion or from the second surface of the second portion.
    Type: Grant
    Filed: September 13, 2016
    Date of Patent: October 2, 2018
    Assignee: SILICON GENESIS CORPORATION
    Inventor: Francois J. Henley