Abstract: A method of optimizing a die size in a method of manufacturing devices using a lithographic apparatus, wherein the lithographic apparatus is arranged to expose an image field of variable size in a single exposure step, the image field having a certain maximum size, the method comprising: receiving a desired area for the die; and calculating a target aspect ratio for the die, wherein the target aspect ratio is determined so as to maximize the number of good dies that can be imaged per hour using the lithographic apparatus. Desirably, calculating a target aspect ratio comprises finding a first target aspect ratio that maximizes a figure of merit MF, where MF is the ratio of the number of dies exposed in each image field divided by the number of exposures on each substrate.

Abstract: A method of optimizing a die size in a method of manufacturing devices using a lithographic apparatus, wherein the lithographic apparatus is arranged to expose an image field of variable size in a single exposure step, the image field having a certain maximum size, the method comprising: receiving a desired area for the die; and calculating a target aspect ratio for the die, wherein the target aspect ratio is determined so as to maximize the number of good dies that can be imaged per hour using the lithographic apparatus. Desirably, calculating a target aspect ratio comprises finding a first target aspect ratio that maximizes a figure of merit MF, where MF is the ratio of the number of dies exposed in each image field divided by the number of exposures on each substrate.

Abstract: A method of device inspection, the method comprising providing an asymmetric marker on a device to be inspected, the form of asymmetry of the marker being dependent upon the parameter to be inspected, directing light at the marker, obtaining a first measurement of the position of the marker via detection of diffracted light of a particular wavelength or diffraction angle, obtaining a second measurement of the position of the marker via detection of diffracted light of a different wavelength or diffraction angle, and comparing the first and second measured positions to determine a shift indicative of the degree of asymmetry of the marker.

Abstract: A method of device inspection, the method comprising providing an asymmetric marker on a device to be inspected, the form of asymmetry of the marker being dependent upon the parameter to be inspected, directing light at the marker, obtaining a first measurement of the position of the marker via detection of diffracted light of a particular wavelength or diffraction angle, obtaining a second measurement of the position of the marker via detection of diffracted light of a different wavelength or diffraction angle, and comparing the first and second measured positions to determine a shift indicative of the degree of asymmetry of the marker.

Abstract: A lithographic projection apparatus with an off-axis alignment unit for aligning a substrate alignment mark (P1) with respect to a reference (RGP) is described. This unit comprises a structure (WEP) of deflection elements (80-86) which give the sub-beams having different diffraction orders coming from the diffractive substrate mark (P1) different directions so that these sub-beams are incident on separate reference gratings (90-96) and can be detected by separate detectors (DET). This unit also provides the possibility of aligning asymmetrical alignment marks with great accuracy.