Abstract: A method of fabricating a semiconductor structure includes the formation of a first bonding layer at least substantially comprised of a first III-V material on a major surface of a first element, and formation of a second bonding layer at least substantially comprised of a second III-V material on a major surface of a second element. The first bonding layer and the second bonding layer are disposed between the first element and the second element, and the first element and the second element are attached to one another at a bonding interface disposed between the first bonding layer and the second bonding layer. Semiconductor structures are fabricated using such methods.

Abstract: Embodiments generally relate to optoelectronic devices and more specifically, to textured layers in optoelectronic devices. In one embodiment, a method for providing a textured layer in an optoelectronic device includes depositing a first layer of a first material and depositing an island layer of a second material on the first layer. Depositing the island layer includes forming one or more islands of the second material to provide at least one textured surface of the island layer, where the textured surface is operative to cause scattering of light.

Abstract: A method of fabricating a semiconductor structure includes the formation of a first bonding layer at least substantially comprised of a first III-V material on major a surface of a first element, and formation of a second bonding layer at least substantially comprised of a second III-V material on a major surface of a second element. The first bonding layer and the second bonding layer are disposed between the first element and the second element, and the first element and the second element are attached to one another at a bonding interface disposed between the first bonding layer and the second bonding layer. Semiconductor structures are fabricated using such methods.

Abstract: Embodiments generally relate to optoelectronic devices and more specifically, to textured layers in optoelectronic devices. In one embodiment, a method for providing a textured layer in an optoelectronic device includes depositing a first layer of a first material and depositing an island layer of a second material on the first layer. Depositing the island layer includes forming one or more islands of the second material to provide at least one textured surface of the island layer, where the textured surface is operative to cause scattering of light.

Abstract: A method of suppression of Indium carry-over in the MOCVD growth of thin InGaAsP quantum wells, with low Indium content, on top of thick GaInAsP, with high Indium content. These quantum wells are essential in the stimulated emission of 808 to 880 nm phosphorous-based laser structures. The Indium carryover effect is larger in large multi wafer reactors and therefore is this invention focused on large multiwafer MOCVD reactors. This invention improves the quality of the quantum well, as measured by photo-luminescence spectra and uniformity of wavelength radiation.

Abstract: A method of suppression of Indium carry-over in the MOCVD growth of thin InGaAsP quantum wells, with low Indium content, on top of thick GaInAsP, with high Indium content. These quantum wells are essential in the stimulated emission of 808 to 880 nm phosphorous-based laser structures. The Indium carryover effect is larger in large multi wafer reactors and therefore is this invention focused on large multiwafer MOCVD reactors. This invention improves the quality of the quantum well, as measured by photo-luminescence spectra and uniformity of wavelength radiation.