Patents by Inventor Franz-Peter Kalz

Franz-Peter Kalz has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10818805
    Abstract: A semiconductor sensor device includes a substrate including a first main face and a second main face opposite the first main face, a semiconductor element including a sensing region, the semiconductor element on the first main face of the substrate and being electrically coupled to the substrate, a lid on the first main face of the substrate and forming a cavity, wherein the semiconductor element is in the cavity, and a vapor deposited dielectric coating covering the semiconductor element and the first main face of the substrate, the vapor deposited dielectric coating having an opening over the sensing region, wherein the second main face of the substrate is at least partially free of the vapor deposited dielectric layer.
    Type: Grant
    Filed: November 9, 2018
    Date of Patent: October 27, 2020
    Assignee: INFINEON TECHNOLOGIES AG
    Inventors: Franz-Peter Kalz, Jochen Dangelmaier
  • Publication number: 20200043836
    Abstract: A package and method of making a package. In one example, the package includes an at least partially electrically conductive carrier, a passive component mounted on the carrier, and an at least partially electrically conductive connection structure electrically connecting the carrier with the component and comprising spacer particles configured for spacing the carrier with regard to the component.
    Type: Application
    Filed: October 8, 2019
    Publication date: February 6, 2020
    Applicant: Infineon Technologies AG
    Inventors: Manfred Schindler, Franz-Peter Kalz, Volker Strutz
  • Patent number: 10438878
    Abstract: A package and method of making a package. In one example, the package includes an at least partially electrically conductive carrier, a passive component mounted on the carrier, and an at least partially electrically conductive connection structure electrically connecting the carrier with the component and comprising spacer particles configured for spacing the carrier with regard to the component.
    Type: Grant
    Filed: April 10, 2018
    Date of Patent: October 8, 2019
    Assignee: Infineon Technologies AG
    Inventors: Manfred Schindler, Franz-Peter Kalz, Volker Strutz
  • Publication number: 20190300362
    Abstract: A semiconductor device and a method of manufacturing the same are provided such that a microelectromechanical systems (MEMS) element is protected at an early manufacturing stage. A method for protecting a MEMS element includes: providing at least one MEMS element, having a sensitive area, on a substrate; and depositing, prior to a package assembly process, a protective material over the sensitive area of the at least one MEMS element such that the sensitive area of at least one MEMS element is sealed from an external environment, where the protective material permits a sensor functionality of the at least one MEMS element.
    Type: Application
    Filed: June 20, 2019
    Publication date: October 3, 2019
    Applicant: Infineon Technologies AG
    Inventors: Florian BRANDL, Manfred FRIES, Franz-Peter KALZ
  • Patent number: 10370244
    Abstract: A semiconductor device and a method of manufacturing the same are provided such that a microelectromechanical systems (MEMS) element is protected at an early manufacturing stage. A method for protecting a MEMS element includes: providing at least one MEMS element, having a sensitive area, on a substrate; and depositing, prior to a package assembly process, a protective material over the sensitive area of the at least one MEMS element such that the sensitive area of at least one MEMS element is sealed from an external environment, where the protective material permits a sensor functionality of the at least one MEMS element.
    Type: Grant
    Filed: November 30, 2017
    Date of Patent: August 6, 2019
    Assignee: Infineon Technologies AG
    Inventors: Florian Brandl, Manfred Fries, Franz-Peter Kalz
  • Publication number: 20190161345
    Abstract: A semiconductor device and a method of manufacturing the same are provided such that a microelectromechanical systems (MEMS) element is protected at an early manufacturing stage. A method for protecting a MEMS element includes: providing at least one MEMS element, having a sensitive area, on a substrate; and depositing, prior to a package assembly process, a protective material over the sensitive area of the at least one MEMS element such that the sensitive area of at least one MEMS element is sealed from an external environment, where the protective material permits a sensor functionality of the at least one MEMS element.
    Type: Application
    Filed: November 30, 2017
    Publication date: May 30, 2019
    Applicant: Infineon Technologies AG
    Inventors: Florian BRANDL, Manfred FRIES, Franz-Peter KALZ
  • Patent number: 10304795
    Abstract: A semiconductor device includes a substrate, a semiconductor die, and an antistatic die attach material between the substrate and the semiconductor die. The antistatic die attach material includes a mixture of a nonconductive adhesive material and carbon black or graphite. In one example, the antistatic die attach material has a resistivity between 101 ?·cm and 1010 ?·cm.
    Type: Grant
    Filed: August 22, 2017
    Date of Patent: May 28, 2019
    Assignee: Infineon Technologies AG
    Inventors: Volker Strutz, Rainer Markus Schaller, Franz-Peter Kalz
  • Publication number: 20190148566
    Abstract: A semiconductor sensor device includes a substrate including a first main face and a second main face opposite the first main face, a semiconductor element including a sensing region, the semiconductor element on the first main face of the substrate and being electrically coupled to the substrate, a lid on the first main face of the substrate and forming a cavity, wherein the semiconductor element is in the cavity, and a vapor deposited dielectric coating covering the semiconductor element and the first main face of the substrate, the vapor deposited dielectric coating having an opening over the sensing region, wherein the second main face of the substrate is at least partially free of the vapor deposited dielectric layer.
    Type: Application
    Filed: November 9, 2018
    Publication date: May 16, 2019
    Inventors: Franz-Peter Kalz, Jochen Dangelmaier
  • Publication number: 20180294210
    Abstract: A package and method of making a package. In one example, the package includes an at least partially electrically conductive carrier, a passive component mounted on the carrier, and an at least partially electrically conductive connection structure electrically connecting the carrier with the component and comprising spacer particles configured for spacing the carrier with regard to the component.
    Type: Application
    Filed: April 10, 2018
    Publication date: October 11, 2018
    Applicant: Infineon Technologies AG
    Inventors: Manfred Schindler, Franz-Peter Kalz, Volker Strutz
  • Patent number: 9984897
    Abstract: A chip arrangement is provided, the chip arrangement, including a carrier; a first chip electrically connected to the carrier; a ceramic layer disposed over the carrier; and a second chip disposed over the ceramic layer; wherein the ceramic layer has a porosity in the range from about 3% to about 70%.
    Type: Grant
    Filed: September 19, 2016
    Date of Patent: May 29, 2018
    Assignee: INFINEON TECHNOLOGIES AG
    Inventors: Manfred Mengel, Joachim Mahler, Khalil Hosseini, Franz-Peter Kalz
  • Publication number: 20170352638
    Abstract: A semiconductor device includes a substrate, a semiconductor die, and an antistatic die attach material between the substrate and the semiconductor die. The antistatic die attach material includes a mixture of a nonconductive adhesive material and carbon black or graphite. In one example, the antistatic die attach material has a resistivity between 101 ?·cm and 1010 ?·cm.
    Type: Application
    Filed: August 22, 2017
    Publication date: December 7, 2017
    Applicant: Infineon Technologies AG
    Inventors: Volker Strutz, Rainer Markus Schaller, Franz-Peter Kalz
  • Patent number: 9790086
    Abstract: A micromechanical semiconductor sensing device is disclosed. In an embodiment the sensing device includes a micromechanical sensing structure being configured to yield an electrical sensing signal, and a piezoresistive sensing device provided in the micromechanical sensing structure, the piezoresistive sensing device being arranged to sense a mechanical stress disturbing the electrical sensing signal and being configured to yield an electrical disturbance signal based on the sensed mechanical stress disturbing the electrical sensing signal.
    Type: Grant
    Filed: September 16, 2016
    Date of Patent: October 17, 2017
    Assignee: INFINEON TECHNOLOGIES AG
    Inventors: Franz-Peter Kalz, Horst Theuss, Bernhard Winkler, Khalil Hosseini, Joachim Mahler, Manfred Mengel
  • Publication number: 20170256515
    Abstract: A semiconductor device includes a substrate, a semiconductor die, and an antistatic die attach material between the substrate and the semiconductor die. The antistatic die attach material includes a mixture of a nonconductive adhesive material and carbon black or graphite. In one example, the antistatic die attach material has a resistivity between 101 ?·cm and 1010 ?·cm.
    Type: Application
    Filed: March 1, 2016
    Publication date: September 7, 2017
    Applicant: Infineon Technologies AG
    Inventors: Volker Strutz, Rainer Markus Schaller, Franz-Peter Kalz
  • Patent number: 9741677
    Abstract: A semiconductor device includes a substrate, a semiconductor die, and an antistatic die attach material between the substrate and the semiconductor die. The antistatic die attach material includes a mixture of a nonconductive adhesive material and carbon black or graphite. In one example, the antistatic die attach material has a resistivity between 101 ?·cm and 1010 ?·cm.
    Type: Grant
    Filed: March 1, 2016
    Date of Patent: August 22, 2017
    Assignee: Infineon Technologies AG
    Inventors: Volker Strutz, Rainer Markus Schaller, Franz-Peter Kalz
  • Patent number: 9728652
    Abstract: A sensor device includes a semiconductor chip. The semiconductor chip has a sensing region sensitive to mechanical loading. A pillar is mechanically coupled to the sensing region.
    Type: Grant
    Filed: January 25, 2012
    Date of Patent: August 8, 2017
    Assignee: Infineon Technologies AG
    Inventors: Klaus Elian, Franz-Peter Kalz, Horst Theuss
  • Patent number: 9567211
    Abstract: Micromechanical semiconductor sensing device comprises a micromechanical sensing structure being configured to yield an electrical sensing signal, and a piezoresistive sensing device provided in the micromechanical sensing structure, said piezoresistive sensing device being arranged to sense a mechanical stress disturbing the electrical sensing signal and being configured to yield an electrical disturbance signal based on the sensed mechanical stress disturbing the electrical sensing signal.
    Type: Grant
    Filed: April 15, 2015
    Date of Patent: February 14, 2017
    Assignee: Infineon Technologies AG
    Inventors: Franz-Peter Kalz, Horst Theuss, Bernhard Winkler, Khalil Hosseini, Joachim Mahler, Manfred Mengel
  • Patent number: 9559078
    Abstract: An electronic component includes an electrically conductive carrier. The electrically conductive carrier includes a carrier surface and a semiconductor chip includes a chip surface. One or both of the carrier surface and the chip surface include a non-planar structure. The chip is attached to the carrier with the chip surface facing towards the carrier surface so that a gap is provided between the chip surface and the carrier surface due to the non-planar structure of one or both of the carrier surface and the first chip surface. The electronic component further includes a first galvanically deposited metallic layer situated in the gap.
    Type: Grant
    Filed: December 23, 2014
    Date of Patent: January 31, 2017
    Assignee: Infineon Technologies AG
    Inventors: Joachim Mahler, Manfred Mengel, Khalil Hosseini, Klaus Schmidt, Franz-Peter Kalz
  • Publication number: 20170003180
    Abstract: A micromechanical semiconductor sensing device is disclosed. In an embodiment the sensing device includes a micromechanical sensing structure being configured to yield an electrical sensing signal, and a piezoresistive sensing device provided in the micromechanical sensing structure, the piezoresistive sensing device being arranged to sense a mechanical stress disturbing the electrical sensing signal and being configured to yield an electrical disturbance signal based on the sensed mechanical stress disturbing the electrical sensing signal.
    Type: Application
    Filed: September 16, 2016
    Publication date: January 5, 2017
    Inventors: Franz-Peter Kalz, Horst Theuss, Bernhard Winkler, Khalil Hosseini, Joachim Mahler, Manfred Mengel
  • Publication number: 20170004979
    Abstract: A chip arrangement is provided, the chip arrangement, including a carrier; a first chip electrically connected to the carrier; a ceramic layer disposed over the carrier; and a second chip disposed over the ceramic layer; wherein the ceramic layer has a porosity in the range from about 3% to about 70%.
    Type: Application
    Filed: September 19, 2016
    Publication date: January 5, 2017
    Inventors: Manfred Mengel, Joachim Mahler, Khalil Hosseini, Franz-Peter Kalz
  • Patent number: 9530754
    Abstract: A chip package is provided. The chip package may include an electrically conductive carrier; at least one first chip including a first side and a second side opposite of the first side, with its second side being electrically contacted to the electrically conductive carrier; an insulating layer over at least a part of the electrically conductive carrier and over at least a part of the first side of the chip; at least one second chip arranged over the insulating layer and next to the first chip; encapsulating material over the first chip and the second chip; and electrical contacts which extend through the encapsulation material to at least one contact of the at least one first chip and to at least one contact of the at least one second chip.
    Type: Grant
    Filed: October 12, 2015
    Date of Patent: December 27, 2016
    Assignee: INFINEON TECHNOLOGIES AG
    Inventors: Khalil Hosseini, Joachim Mahler, Franz-Peter Kalz, Joachim Voelter, Ralf Wombacher