Patents by Inventor Franz Zangl

Franz Zangl has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7202527
    Abstract: A MOS transistor includes a drain zone, a source zone, and a gate electrode. Doping atoms of the first conductivity type are implanted in the region of the drain zone and the source zone by at least two further implantation steps such that a pn junction between the drain zone and a substrate region is vertically shifted and a voltage ratio of the MOS transistor between a lateral breakdown voltage and a vertical breakdown voltage can be set.
    Type: Grant
    Filed: July 29, 2004
    Date of Patent: April 10, 2007
    Assignee: Infineon Technologies AG
    Inventors: Kai Esmark, Harald Gossner, Gunther Mackh, Richard Owen, Franz Zängl
  • Publication number: 20060028780
    Abstract: A method and apparatus for creating electrostatic discharge (“ESD”) protection in a microelectronic module is disclosed. A semiconductor circuit comprises at least two independent voltage-supply domains, each of which comprises at least one bonding pad. The at least two bonding pads of the at least two independent voltage-supply domains are coupled together by an electrical connection, such as a bonding wire or a solder spot, which is routed outside the semiconductor circuit.
    Type: Application
    Filed: June 27, 2005
    Publication date: February 9, 2006
    Inventors: Peter Pessl, Franz Zangl
  • Patent number: 6884688
    Abstract: A MOS transistor includes a drain zone, a source zone, and a gate electrode. Doping atoms of the first conductivity type are implanted in the region of the drain zone and the source zone by at least two further implantation steps such that a pn junction between the drain zone and a substrate region is vertically shifted and a voltage ratio of the MOS transistor between a lateral breakdown voltage and a vertical breakdown voltage can be set.
    Type: Grant
    Filed: October 2, 2002
    Date of Patent: April 26, 2005
    Assignee: Infineon Technologies AG
    Inventors: Kai Esmark, Harald Gossner, Gunther Mackh, Richard Owen, Franz Zängl
  • Publication number: 20050001270
    Abstract: A MOS transistor includes a drain zone, a source zone, and a gate electrode. Doping atoms of the first conductivity type are implanted in the region of the drain zone and the source zone by at least two further implantation steps such that a pn junction between the drain zone and a substrate region is vertically shifted and a voltage ratio of the MOS transistor between a lateral breakdown voltage and a vertical breakdown voltage can be set.
    Type: Application
    Filed: July 29, 2004
    Publication date: January 6, 2005
    Inventors: Kai Esmark, Harald Gossner, Gunther Mackh, Richard Owen, Franz Zangl
  • Publication number: 20030064573
    Abstract: A MOS transistor includes a drain zone, a source zone, and a gate electrode. Doping atoms of the first conductivity type are implanted in the region of the drain zone and the source zone by at least two further implantation steps such that a pn junction between the drain zone and a substrate region is vertically shifted and a voltage ratio of the MOS transistor between a lateral breakdown voltage and a vertical breakdown voltage can be set.
    Type: Application
    Filed: October 2, 2002
    Publication date: April 3, 2003
    Inventors: Kai Esmark, Harald Gossner, Gunther Mackh, Richard Owen, Franz Zangl