Patents by Inventor Fred Alokozai

Fred Alokozai has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20190003052
    Abstract: An apparatus and method for depositing a transition metal nitride film on a substrate by atomic layer deposition in a reaction space defined by an at least one chamber wall and showerhead is disclosed. The apparatus may include, a substrate support disposed within the reaction space, the substrate support configured for supporting at least one substrate and a temperature control system for controlling a temperature of the at least one chamber wall at those portions of the at least one chamber wall that is exposed to a vapor phase reactant. The apparatus may also include a temperature control system for controlling a temperature of the showerhead, wherein the temperature control system for controlling a temperature of the showerhead is configured to control the temperature of the showerhead to a temperature of between approximately 80° C. and approximately 160° C.
    Type: Application
    Filed: June 28, 2017
    Publication date: January 3, 2019
    Inventors: Eric James Shero, Robert Brennan Milligan, William George Petro, Eric Wang, Fred Alokozai, Dong Li, Hao Wang, Melvin Verbaas, Luping Li
  • Patent number: 10023960
    Abstract: Embodiments related to hardware and methods for processing a semiconductor substrate are disclosed. One example film deposition reactor includes a process gas distributor including a plasma gas-feed inlet located to supply plasma gas to a plasma generation region within the film deposition reactor and a precursor gas-feed inlet located to supply film precursor gas downstream of the plasma generation region; an insulating confinement vessel configured to maintain a plasma generation region at a reduced pressure within the film deposition reactor and an inductively-coupled plasma (ICP) coil arranged around a portion of a sidewall of the insulating confinement vessel and positioned so that the sidewall separates the plasma generation region from the ICP coil; and a susceptor configured to support the semiconductor substrate so that a film deposition surface of the semiconductor substrate is exposed to a reaction region formed downstream of the process gas distributor.
    Type: Grant
    Filed: March 22, 2017
    Date of Patent: July 17, 2018
    Assignee: ASM IP Holdings B.V.
    Inventors: Fred Alokozai, Robert Brennan Milligan
  • Publication number: 20180158688
    Abstract: Methods for forming a transition metal niobium nitride film on a substrate by atomic layer deposition and related semiconductor device structures are provided. In some embodiments methods may include contacting a substrate with a first reactant comprising a transition metal precursor, contacting the substrate with a second reactant comprising a niobium precursor and contacting the substrate with a third reactant comprising a nitrogen precursor. In some embodiments related semiconductor device structures may include a semiconductor body and an electrode comprising a transition metal niobium nitride disposed over the semiconductor body.
    Type: Application
    Filed: October 26, 2017
    Publication date: June 7, 2018
    Inventors: Jerry Peijun Chen, Fred Alokozai
  • Publication number: 20170191164
    Abstract: Embodiments related to hardware and methods for processing a semiconductor substrate are disclosed. One example film deposition reactor includes a process gas distributor including a plasma gas-feed inlet located to supply plasma gas to a plasma generation region within the film deposition reactor and a precursor gas-feed inlet located to supply film precursor gas downstream of the plasma generation region; an insulating confinement vessel configured to maintain a plasma generation region at a reduced pressure within the film deposition reactor and an inductively-coupled plasma (ICP) coil arranged around a portion of a sidewall of the insulating confinement vessel and positioned so that the sidewall separates the plasma generation region from the ICP coil; and a susceptor configured to support the semiconductor substrate so that a film deposition surface of the semiconductor substrate is exposed to a reaction region formed downstream of the process gas distributor.
    Type: Application
    Filed: March 22, 2017
    Publication date: July 6, 2017
    Inventors: Fred Alokozai, Robert Brennan Milligan
  • Patent number: 9605342
    Abstract: Embodiments related to hardware and methods for processing a semiconductor substrate are disclosed. One example film deposition reactor includes a process gas distributor including a plasma gas-feed inlet located to supply plasma gas to a plasma generation region within the film deposition reactor and a precursor gas-feed inlet located to supply film precursor gas downstream of the plasma generation region; an insulating confinement vessel configured to maintain a plasma generation region at a reduced pressure within the film deposition reactor and an inductively-coupled plasma (ICP) coil arranged around a portion of a sidewall of the insulating confinement vessel and positioned so that the sidewall separates the plasma generation region from the ICP coil; and a susceptor configured to support the semiconductor substrate so that a film deposition surface of the semiconductor substrate is exposed to a reaction region formed downstream of the process gas distributor.
    Type: Grant
    Filed: March 16, 2015
    Date of Patent: March 28, 2017
    Assignee: ASM IP Holding B.V.
    Inventors: Fred Alokozai, Robert Brennan Milligan
  • Publication number: 20160376700
    Abstract: A system and method for treating a deposition reactor are disclosed. The system and method remove or mitigate formation of residue in a gas-phase reactor used to deposit doped metal films, such as aluminum-doped titanium carbide films or aluminum-doped tantalum carbide films. The method includes a step of exposing a reaction chamber to a treatment reactant that mitigates formation of species that lead to residue formation.
    Type: Application
    Filed: September 12, 2016
    Publication date: December 29, 2016
    Inventors: Suvi Haukka, Eric James Shero, Fred Alokozai, Dong Li, Jereld Lee Winkler, Xichong Chen
  • Patent number: 9412564
    Abstract: A processing chamber including a reaction chamber having a processing area, a processing gas inlet in communication with the processing area, a first excited species generation zone in communication with the processing gas inlet and a second exited species generation zone in communication with the processing gas inlet. A method of processing a substrate including the steps of loading a substrate within a processing area, activating a first excited species generation zone to provide a first excited species precursor to the processing area during a first pulse and, activating a second excited species generation zone to provide a second excited species precursor different from the first excited species precursor to the processing area during a second pulse.
    Type: Grant
    Filed: March 16, 2015
    Date of Patent: August 9, 2016
    Assignee: ASM IP Holding B.V.
    Inventors: Robert Brennan Milligan, Fred Alokozai
  • Patent number: 9340874
    Abstract: A reaction chamber including an upper region for processing a substrate, a lower region for loading a substrate, a susceptor movable within the reaction chamber, a first sealing member positioned on a perimeter of the susceptor, a second sealing member positioned between the upper region and the lower region, wherein the first and second sealing members are selectively engaged with one another to limit communication between the upper region and the lower region.
    Type: Grant
    Filed: February 27, 2015
    Date of Patent: May 17, 2016
    Assignee: ASM IP Holding B.V.
    Inventors: Michael Halpin, Eric Shero, Carl White, Fred Alokozai, Jerry Winkler, Todd Dunn
  • Publication number: 20160115590
    Abstract: A system and method for treating a deposition reactor are disclosed. The system and method remove or mitigate formation of residue in a gas-phase reactor used to deposit doped metal films, such as aluminum-doped titanium carbide films or aluminum-doped tantalum carbide films. The method includes a step of exposing a reaction chamber to a treatment reactant that mitigates formation of species that lead to residue formation.
    Type: Application
    Filed: January 4, 2016
    Publication date: April 28, 2016
    Inventors: Suvi Haukka, Eric James Shero, Fred Alokozai, Dong Li, Jereld Lee Winkler, Xichong Chen
  • Patent number: 9299595
    Abstract: A wafer processing apparatus may include a susceptor having a top side and a backside, a susceptor heater having a spacing member and a heating member, a shim removably mounted between the susceptor and the susceptor heater, a cavity formed by the susceptor backside, the susceptor heater, and the shim, a fluid inlet communicating with the cavity, and a plurality of fluid outlets communicating with the cavity.
    Type: Grant
    Filed: December 8, 2014
    Date of Patent: March 29, 2016
    Assignee: ASM IP Holding B.V.
    Inventors: Todd Dunn, Fred Alokozai, Jerry Winkler, Michael Halpin
  • Publication number: 20160013024
    Abstract: A processing chamber including a reaction chamber having a processing area, a processing gas inlet in communication with the processing area, a first excited species generation zone in communication with the processing gas inlet and a second exited species generation zone in communication with the processing gas inlet. A method of processing a substrate including the steps of loading a substrate within a processing area, activating a first excited species generation zone to provide a first excited species precursor to the processing area during a first pulse and, activating a second excited species generation zone to provide a second excited species precursor different from the first excited species precursor to the processing area during a second pulse.
    Type: Application
    Filed: March 16, 2015
    Publication date: January 14, 2016
    Inventors: Robert Brennan Milligan, Fred Alokozai
  • Patent number: 9228259
    Abstract: A method for treating a deposition reactor is disclosed. The method removes or mitigates formation of residue in a gas-phase reactor used to deposit doped metal films, such as aluminum-doped titanium carbide films or aluminum-doped tantalum carbide films. The method includes a step of exposing a reaction chamber to a treatment reactant that mitigates formation of species that lead to residue formation.
    Type: Grant
    Filed: January 28, 2014
    Date of Patent: January 5, 2016
    Assignee: ASM IP Holding B.V.
    Inventors: Suvi Haukka, Eric James Shero, Fred Alokozai, Dong Li, Jereld Lee Winkler, Xichong Chen
  • Publication number: 20150184291
    Abstract: Embodiments related to hardware and methods for processing a semiconductor substrate are disclosed. One example film deposition reactor includes a process gas distributor including a plasma gas-feed inlet located to supply plasma gas to a plasma generation region within the film deposition reactor and a precursor gas-feed inlet located to supply film precursor gas downstream of the plasma generation region; an insulating confinement vessel configured to maintain a plasma generation region at a reduced pressure within the film deposition reactor and an inductively-coupled plasma (ICP) coil arranged around a portion of a sidewall of the insulating confinement vessel and positioned so that the sidewall separates the plasma generation region from the ICP coil; and a susceptor configured to support the semiconductor substrate so that a film deposition surface of the semiconductor substrate is exposed to a reaction region formed downstream of the process gas distributor.
    Type: Application
    Filed: March 16, 2015
    Publication date: July 2, 2015
    Inventors: Fred Alokozai, Robert Brennan Milligan
  • Publication number: 20150167159
    Abstract: A reaction chamber including an upper region for processing a substrate, a lower region for loading a substrate, a susceptor movable within the reaction chamber, a first sealing member positioned on a perimeter of the susceptor, a second sealing member positioned between the upper region and the lower region, wherein the first and second sealing members are selectively engaged with one another to limit communication between the upper region and the lower region.
    Type: Application
    Filed: February 27, 2015
    Publication date: June 18, 2015
    Inventors: Michael Halpin, Eric Shero, Carl White, Fred Alokozai, Jerry Winkler, Todd Dunn
  • Patent number: 9029253
    Abstract: Nitrogen-containing phase-stabilized films, methods of forming phase-stabilized films, and structures and devices including the phase-stabilized films are disclosed. The phase-stabilized films include a matrix material and a phase stabilizer, which provides a morphologically stabilizing effect to a matrix material within the films. The phase-stabilized films may be used as, for example, gate electrodes and similar films in microelectronic devices.
    Type: Grant
    Filed: May 1, 2013
    Date of Patent: May 12, 2015
    Assignee: ASM IP Holding B.V.
    Inventors: Robert Brennan Milligan, Fred Alokozai
  • Patent number: 9021985
    Abstract: Embodiments related to hardware and methods for processing a semiconductor substrate are disclosed. One example film deposition reactor includes a process gas distributor including a plasma gas-feed inlet located to supply plasma gas to a plasma generation region within the film deposition reactor and a precursor gas-feed inlet located to supply film precursor gas downstream of the plasma generation region; an insulating confinement vessel configured to maintain a plasma generation region at a reduced pressure within the film deposition reactor and an inductively-coupled plasma (ICP) coil arranged around a portion of a sidewall of the insulating confinement vessel and positioned so that the sidewall separates the plasma generation region from the ICP coil; and a susceptor configured to support the semiconductor substrate so that a film deposition surface of the semiconductor substrate is exposed to a reaction region formed downstream of the process gas distributor.
    Type: Grant
    Filed: September 12, 2012
    Date of Patent: May 5, 2015
    Assignee: ASM IP Holdings B.V.
    Inventors: Fred Alokozai, Robert Brennan Milligan
  • Patent number: 9018111
    Abstract: A processing chamber including a reaction chamber having a processing area, a processing gas inlet in communication with the processing area, a first excited species generation zone in communication with the processing gas inlet and a second exited species generation zone in communication with the processing gas inlet. A method of processing a substrate including the steps of loading a substrate within a processing area, activating a first excited species generation zone to provide a first excited species precursor to the processing area during a first pulse and, activating a second excited species generation zone to provide a second excited species precursor different from the first excited species precursor to the processing area during a second pulse.
    Type: Grant
    Filed: July 22, 2013
    Date of Patent: April 28, 2015
    Assignee: ASM IP Holding B.V.
    Inventors: Robert Brennan Milligan, Fred Alokozai
  • Patent number: 9005539
    Abstract: A reaction chamber including an upper region for processing a substrate, a lower region for loading a substrate, a susceptor movable within the reaction chamber, a first sealing member positioned on a perimeter of the susceptor, a second sealing member positioned between the upper region and the lower region, wherein the first and second sealing members are selectively engaged with one another to limit communication between the upper region and the lower region.
    Type: Grant
    Filed: November 14, 2012
    Date of Patent: April 14, 2015
    Assignee: ASM IP Holding B.V.
    Inventors: Michael Halpin, Eric Shero, Carl White, Fred Alokozai, Jerry Winkler, Todd Dunn
  • Publication number: 20150096973
    Abstract: A wafer processing apparatus may include a susceptor having a top side and a backside, a susceptor heater having a spacing member and a heating member, a shim removably mounted between the susceptor and the susceptor heater, a cavity formed by the susceptor backside, the susceptor heater, and the shim, a fluid inlet communicating with the cavity, and a plurality of fluid outlets communicating with the cavity.
    Type: Application
    Filed: December 8, 2014
    Publication date: April 9, 2015
    Inventors: Todd Dunn, Fred Alokozai, Jerry Winkler, Michael Halpin
  • Publication number: 20150024609
    Abstract: A processing chamber including a reaction chamber having a processing area, a processing gas inlet in communication with the processing area, a first excited species generation zone in communication with the processing gas inlet and a second exited species generation zone in communication with the processing gas inlet. A method of processing a substrate including the steps of loading a substrate within a processing area, activating a first excited species generation zone to provide a first excited species precursor to the processing area during a first pulse and, activating a second excited species generation zone to provide a second excited species precursor different from the first excited species precursor to the processing area during a second pulse.
    Type: Application
    Filed: July 22, 2013
    Publication date: January 22, 2015
    Applicant: ASM IP Holding B.V.
    Inventors: Robert Brennan Milligan, Fred Alokozai