Abstract: A high-level synthesis device, which converts a behavior description file describing a function of an integrated circuit using a high-level language without timing description, into a hardware description file describing the integrated circuit including timing description, has: a processor; a high-level synthesis unit in which the processor converts a behavior description file having a functional portion describing the function and a control portion controlling timing, into a first hardware description file; a variable extraction unit; a loop information generation unit; a static latency extraction unit; a latency calculation circuit generation unit in which the processor generates a second hardware description file describing a latency calculation circuit which generates the latency information based on loop count and static latency; and an insertion unit in which the processor inserts the second hardware description file into the first hardware description file to generate a third hardware description file.

Abstract: A three dimensional semiconductor integrated circuit device includes a stacking of a plurality of semiconductor chips each including a plurality of through via-plugs, in each of the semiconductor chips, a plurality of through via-plugs are connected commonly with each other by a connection pad provided on a top surface or bottom surface of the semiconductor chip, the connection pad on a top surface of a first semiconductor chip being joined directly to a corresponding connection pad on a bottom surface of a second semiconductor chip stacked thereon.

Abstract: An internal voltage generation circuit includes a vblh voltage generation circuit that generates a voltage vblh that is supplied as a high-voltage power supply of a sense amplifier, and a voltage distribution control circuit that has a first current source that pulls down an output node and a second current source that pulls up the output node. The output node is pulled down by the first current source operating, and the voltage thereof is maintained at a voltage that corresponds to a lower limit of a detection voltage value. The output node is pulled up by the second current source operating, and the voltage thereof is maintained at a voltage that corresponds to an upper limit of the detection voltage value.

Abstract: An electric fuse includes a conductive material formed on a top surface of an insulating material. The conductive material includes a wiring portion, and first and second terminal portions arranged in two ends of the wiring portion so that the wiring portion is located between the first and second terminal portions. The first terminal portion, the wiring portion, and the second terminal portion are lined up in a first direction. The first and second terminal portions each have a width larger than a width of the wiring portion in a second direction perpendicular to the first direction. The electric fuse includes a film including an opening which exposes a region between the first terminal portion and the second terminal portion. The film is formed above at least a part of the wiring portion and has a tensile stress.

Abstract: A method for manufacturing a semiconductor includes: forming an isolation region defining first, second and third active regions; implanting first impurity ions of a first conductivity type to form first, second and third wells; implanting second impurity ions of the first conductivity type to form first and second channel regions; implanting second impurity ions of a second conductivity to form a first drain region, such that a portion of the first channel region is overlapped with the first drain region; forming first, second and third gate electrodes, the first gate electrode superposing a portion of the first drain region and covering one lateral end of the first channel region; forming first insulating side wall spacers and a second insulating side wall spacer on a side wall of the first gate electrode; and implanting fourth impurity ions of the second conductivity type to form second drain/source regions.

Abstract: In a vector processing device, a data dependence detecting unit detects a data dependence relation between a preceding instruction and a succeeding instruction which are inputted from an instruction buffer, and an instruction issuance control unit controls issuance of an instruction based on a detection result thereof. When there is a data dependence relation between the preceding instruction and the succeeding instruction, the instruction issuance control unit generates a new instruction equivalent to processing related to a vector register including the data dependence relation with the succeeding instruction in processing executed by the preceding instruction and issues the new instruction between the preceding instruction and the succeeding instruction, and thereby a data hazard can be avoided between the preceding instruction and the succeeding instruction without making a stall occur.

Abstract: A semiconductor device includes: a substrate in which a product region and scribe regions are defined; a 1st insulation film formed above the substrate; a metal film in the 1st insulation film, disposed within the scribe regions in such a manner as to surround the product region; a 2nd insulation film formed on the 1st insulation film and the metal film; a 1st groove disposed more inside than the metal film in such a manner as to surround the product region, and reaching from a top surface of the 2nd insulation film to a position deeper than a top surface of the metal film; and a 2nd groove disposed more outside than the metal film in such a manner as to surround the metal film, and reaching from the top surface of the 2nd insulation film to a position deeper than the top surface of the metal film.

Abstract: A semiconductor device including a gate electrode formed over a first region of a semiconductor substrate of a first conduction type; a source region and a drain region of the first conduction type formed on both sides of the gate electrode; a channel dope layer of a second conduction type formed in at least a region on a side of the source region of a channel region, the channel dope layer having a concentration gradient of a concentration of a dopant impurity of the second conduction type, which decrease toward the drain region; a first well of the second conduction type having a concentration gradient of a concentration of a dopant impurity of the second conduction type, which decrease toward the drain region; and a second well of the second conduction type formed in the first region, connected to the first well and positioned below the first well.

Abstract: A nonvolatile semiconductor memory device includes a memory cell array, a plurality of local sense amplifiers, a global sense amplifier and an address decoder. The address decoder is configured to switch between a first verification and a second verification. The first verification operates the plurality of local sense amplifiers and simultaneously verifies data of a plurality of memory cells connected to the plurality of local sense amplifiers. The second verification stops the plurality of local sense amplifiers, directly connects the local bit line connected to each of the local sense amplifiers with the global bit line, and simultaneously verifies data of the plurality of memory cells connected to the plurality of local sense amplifiers.

Abstract: A semiconductor device includes a first transistor including a GaN-based semiconductor stacked structure formed over a substrate, a first gate electrode having a plurality of first fingers over the semiconductor stacked structure, a plurality of first drain electrodes provided along the first fingers, and a plurality of first source electrodes provided along the first fingers; a second transistor including the semiconductor stacked structure, a second gate electrode having a plurality of second fingers over the semiconductor stacked structure, the second drain electrodes provided along the second fingers, and a plurality of second source electrodes provided along the second fingers; a drain pad provided over or under the first drain electrodes, and coupled to the first drain electrodes; a source pad provided over or under the second source electrodes, and coupled to the second source electrodes; and a common pad coupled to the first source electrodes and the second drain electrodes.

Abstract: A semiconductor apparatus includes a first chip including a first port configured to receive an operation clock signal, a first circuit configured to operate in synchronization with the operation clock signal, and a second chip mounted on the first chip. The second chip includes a delay control part configured to generate a delay control signal indicating a delay amount based on a cycle of a reference clock signal, plural delay circuits connected in multiple stages and configured to delay clock signals input to the plural delay control circuits based on the delay control signal and sequentially output the delayed clock signals to a subsequent stage, and a second port connected to the first port and configured to receive the operation clock signal based on the delayed clock signals output from the plural delay circuits.

Abstract: The semiconductor device has insulating films 40, 42 formed over a substrate 10; an interconnection 58 buried in at least a surface side of the insulating films 40, 42; insulating films 60, 62 formed on the insulating film 42 and including a hole-shaped via-hole 60 and a groove-shaped via-hole 66a having a pattern bent at a right angle; and buried conductors 70, 72a buried in the hole-shaped via-hole 60 and the groove-shaped via-hole 66a. A groove-shaped via-hole 66a is formed to have a width which is smaller than a width of the hole-shaped via-hole 66. Defective filling of the buried conductor and the cracking of the inter-layer insulating film can be prevented. Steps on the conductor plug can be reduced. Accordingly, defective contact with the upper interconnection layer and the problems taking place in forming films can be prevented.

Abstract: An upper electrode of a ferroelectric capacitor has a first layer formed of a first oxide expressed by a chemical formula AOx1 (A: metal, O: oxygen) using a stoichiometric composition parameter x1, and expressed by a chemical formula AOx2 using a actual composition parameter x2, and a second layer formed of a second oxide, formed on the first layer, expressed by a chemical formula BOy1 (B: metal) using a stoichiometric composition parameter y1 and expressed by a chemical formula BO2 using a actual composition parameter y2, which includes at least one of stone-wall crystal and column crystal.

Abstract: A reference voltage generation circuit has: a first PN junction element; a second PN junction element having a higher forward direction voltage than the first PN junction element; a first differential amplifier inputting an anode of the first PN junction element and a first connection node between a first and a second resistor disposed in series between a first output of the first differential amplifier and a first potential, and generating a first output voltage at the first output; and a second differential amplifier inputting an anode of the second PN junction element and a second connection node between a fourth and a third resistor disposed in series between a second output of the second differential amplifier and the first output of the first differential amplifier, and generating a reference voltage at the second output. A resistance ratio between the third and the fourth resistors is variable.

Abstract: A method for manufacturing a semiconductor device includes forming a first gate electrode on a semiconductor substrate in a first transistor region; forming a channel dose region; and forming a first source extension region, wherein the channel dose region is formed by using a first mask as a mask and by ion-implanting a first dopant of the first conductivity type, and the first mask covering a drain side of the first gate electrode and covering a drain region, and the first source extension region is formed by using a second mask and the gate electrode as masks and by ion-implanting a second dopant of a second conductivity type that is a conductivity type opposite to the first conductivity type, the second mask covering the drain side of the first gate electrode and covering the drain region.

Abstract: The semiconductor memory device includes a memory cell, a pair of bit lines and a cell power line connected to the memory cell, a first switch connected to the bit lines and a power voltage line, a second switch connected to the cell power line and a write assist cell power line, and a write control circuit configured to control the bit lines, the first switch and the second switch, wherein the write control circuit applies a first voltage of a high level to one bit line and a second voltage of a low level to the other bit line, connects one bit line to the power voltage line and disconnects the other bit line from the power voltage line by the first switch, and then connects the cell power line to the write assist cell power line lower which is than the first voltage by the second switch.

Abstract: A method for manufacturing a semiconductor device includes forming a first gate electrode on a semiconductor substrate in a first transistor region; forming a channel dose region; and forming a first source extension region, wherein the channel dose region is formed by using a first mask as a mask and by ion-implanting a first dopant of the first conductivity type, and the first mask covering a drain side of the first gate electrode and covering a drain region, and the first source extension region is formed by using a second mask and the gate electrode as masks and by ion-implanting a second dopant of a second conductivity type that is a conductivity type opposite to the first conductivity type, the second mask covering the drain side of the first gate electrode and covering the drain region.

Abstract: The semiconductor device has insulating films 40, 42 formed over a substrate 10; an interconnection 58 buried in at least a surface side of the insulating films 40, 42; insulating films 60, 62 formed on the insulating film 42 and including a hole-shaped via-hole 60 and a groove-shaped via-hole 66a having a pattern bent at a right angle; and buried conductors 70, 72a buried in the hole-shaped via-hole 60 and the groove-shaped via-hole 66a. A groove-shaped via-hole 66a is formed to have a width which is smaller than a width of the hole-shaped via-hole 66. Defective filling of the buried conductor and the cracking of the inter-layer insulating film can be prevented. Steps on the conductor plug can be reduced. Accordingly, defective contact with the upper interconnection layer and the problems taking place in forming films can be prevented.

Abstract: An FeRAM is produced by a method including the steps of forming a lower electrode layer, forming a first ferroelectric film on the lower electrode layer, forming on the first ferroelectric film a second ferroelectric film in an amorphous state containing iridium inside, thermally treating the second ferroelectric film in an oxidizing atmosphere to crystallize the second ferroelectric film and to cause iridium in the second ferroelectric film to diffuse into the first ferroelectric film, forming an upper electrode layer on the second ferroelectric film, and processing each of the upper electrode layer, the second ferroelectric film, the first ferroelectric film, and the lower electrode layer to form the capacitor structure. With such a structure, the inversion charge amount in a ferroelectric capacitor structure is improved without increasing the leak current pointlessly, and a high yield can be assured, thereby realizing a highly reliable FeRAM.

Abstract: A method of manufacturing a semiconductor device includes: forming a conductive film on a semiconductor substrate; patterning the conductive film in a memory region to form a first gate electrode; after forming the first gate electrode, forming a mask film above each of the conductive film in a logic region and the first gate electrode; removing the mask film in the logic region; forming a first resist film above the mask film left in the memory region and above the conductive film left in the logic region; and forming a second gate electrode in the logic region by etching the conductive film using the first resist film as a mask.