Abstract: In one embodiment, a polymer includes a recurring unit containing a bivalent group expressed by a formula (1) shown below. A weight-average molecular weight of the polymer is in a range of 3000 or more to 1000000 or less. R1 is a monovalent group selected from hydrogen, a substituted or unsubstituted alkyl group, a substituted or unsubstituted alkanoyl group, a substituted or unsubstituted awl group, and a substituted or unsubstituted heteroaryl group. X is an atom selected from oxygen, sulfur, and selenium. Y and Z are each independently a bivalent group selected from a carbonyl group, a sulfinyl group, and a sulfonyl group. A case where Y and Z are both the carbonyl groups is excluded.

Abstract: A polymer of an embodiment includes a repeating unit containing at least one bivalent group selected from the following formula (1) and the following formula (2). In the formulas (1) and (2), R is hydrogen, fluorine, an alkyl group, an aryl group, a heteroaryl group, or the like. X and Y are each an alkanoyl group, an aminocarbonyl group, an alkylsulfonyl group, or the like. Ar is an aryl group or a heteroaryl group.

Abstract: A polymer of an embodiment includes a repeating unit containing a bivalent group represented by the following formula (1). R is hydrogen, halogen, an alkyl group, an alkanoyl group, an aryl group, a heteroaryl group, or the like. X is oxygen, sulfur, selenium, or the like. Y and Z each is a bivalent group selected from a carbonyl group, a sulfinyl group, and a sulfonyl group. However, a case where Y and Z are both the carbonyl groups is excluded.

Abstract: According to one embodiment, a polymer material includes two or more different repeating units each containing a quinoxaline backbone. At least one of the repeating units includes a halogen atom.

Abstract: According to an embodiment, a non-volatile memory device includes a first conductive layer, a second conductive layer, and a resistance change layer provided between the first conductive layer and the second conductive layer. The resistance change layer is capable of making a transition between a low-resistance state and a high-resistance state, and includes an oxide containing at least one of hafnium (Hf) and zirconium (Zr), at least one selected from the group consisting of barium (Ba), lanthanum (La), gadolinium (Gd) and lutetium (Lu), and nitrogen (N).

Abstract: A magnet material of an embodiment includes a composition represented by a formula 1: (Fe1-x-yCoxTy)2(B1-aAa)b, and a metallic structure having a CuAl2 crystal phase as a main phase. T is at least one element selected from V, Cr, and Mn. A is at least one element selected from C, N, Si, S, P, and Al. An atomic ratio x of Co and an atomic ratio y of the element T satisfy 0.01?y?0.5 and x+y?0.5. When the element T includes at least one element selected from V and Cr, a total atomic ratio of V and Cr is 0.03 or more. When the element T includes Mn, an atomic ratio of Mn is 0.3 or less. An atomic ratio a of the element A satisfies 0?a?0.4. A total atomic ratio b of B and the element A satisfies 0.8?b?1.2.

Abstract: Embodiments of the present invention provide an organic semiconductor excellent in the photoelectric conversion efficiency and also a solar cell using the same. This organic semiconductor has a polymer structure comprising a repeating unit represented by the following formula (I): -[A-D]- (I). In the formula, A is a structure represented by and D is a structure having a benzodithiophene skeleton or the like. In the above, R1 is independently H, a substituted or unsubstituted straight-chain or branched-chain alkyl group, or a substituted or unsubstituted straight-chain or branched-chain alkoxy group. The solar cell according to an embodiment of the present invention comprises an active layer containing the organic semiconductor.

Abstract: A solid catalyst having a close-packed structure has basic structural units present in the surface of the solid catalyst, the basic structural units including (i) a triangular lattice constituted of atoms of platinum, ruthenium, and at least one additional element which are disposed at the vertexes in the triangular lattice so that each atom of one of the elements adjoins atoms of the other elements or (ii) a rhombic lattice constituted of atoms of platinum, ruthenium, and at least one additional element which are disposed at the vertexes in the rhombic lattice in an atomic ratio of 1:2:1 so that each ruthenium atom directly adjoins a platinum atom and an atom of the additional element; and a fuel cell includes either of the solid catalyst as an anode-side electrode catalyst.

Abstract: According to an embodiment, a non-volatile memory device includes a first conductive layer, a second conductive layer, and a resistance change layer provided between the first conductive layer and the second conductive layer. The resistance change layer is capable of making a transition between a low-resistance state and a high-resistance state, and includes an oxide containing at least one of hafnium (Hf) and zirconium (Zr), at least one selected from the group consisting of barium (Ba), lanthanum (La), gadolinium (Gd) and lutetium (Lu), and nitrogen (N).

Abstract: Embodiments of the present invention provide an organic semiconductor excellent in the photoelectric conversion efficiency and also a solar cell using the same. This organic semiconductor has a polymer structure comprising a repeating unit represented by the following formula (I): -[A-D]- (I). In the formula, A is a structure represented by and D is a structure having a benzodithiophene skeleton or the like. In the above, R1 is independently H, a substituted or unsubstituted straight-chain or branched-chain alkyl group, or a substituted or unsubstituted straight-chain or branched-chain alkoxy group. The solar cell according to an embodiment of the present invention comprises an active layer containing the organic semiconductor.

Abstract: According to one embodiment, an information recording and reproducing device includes a recording layer and a driving unit. The recording layer includes a first layer containing a first compound. The first compound includes a first positive ion element. The first positive ion element is made of a transition metal element and serves as a first positive ion. The second positive ion element serves as a second positive ion. The driving unit is configured to generate a phase change in the recording layer and to record information by at least one of application of a voltage and application of a current to the recording layer. The coordination number of the first positive ion element at a position of a second coordination of the second positive ion element is 80% or more and less than 100% of the coordination number when the first compound is assumed to be a perfect crystal.

Abstract: According to one embodiment, a polymer material includes two or more different repeating units each containing a quinoxaline backbone. At least one of the repeating units includes a halogen atom.

Abstract: The present invention provides a fluorescent rare earth complex having high solubility to a medium, showing fluorescence of high intensity and possessing excellent durability, and also provides a light-emitting element using that complex. The rare earth complex comprises a rare earth ion and a phosphine oxide ligand, and the phosphine oxide ligand contains a phosphorus atom connecting to at least one phenyl group. In the phenyl group, at least one of the meta-positions is substituted. It is also necessary that the para-position of the phenyl group be not substituted.

Abstract: According to one embodiment, an information recording and reproducing device includes a recording layer and a driving unit. The recording layer includes a first layer containing a first compound. The first compound includes a first positive ion element. The first positive ion element is made of a transition metal element and serves as a first positive ion. The second positive ion element serves as a second positive ion. The driving unit is configured to generate a phase change in the recording layer and to record information by at least one of application of a voltage and application of a current to the recording layer. The coordination number of the first positive ion element at a position of a second coordination of the second positive ion element is 80% or more and less than 100% of the coordination number when the first compound is assumed to be a perfect crystal.

Abstract: A high-impedance substrate is provided, which includes a metallic plate employed as a ground plane, a resonance circuit layer spaced away from the metallic plate by a distance “t”, the resonance circuit layer being provided with at least two resonance circuits having the same height and disposed side by side with a distance “g”, a connecting component connecting the resonance circuit with the metallic plate, and a magnetic material layer interposed between the metallic plate and the resonance circuit layer. The distance “t” between the metallic plate and the resonance circuit layer is confined within the range of 0.1 to 10 mm, the distance “g” between neighboring resonance circuits is confined within the range of 0.01 to 5 mm, the distance “h” between the magnetic material layer and the resonance circuit layer is confined within the range represented by the following inequality 1: g/2?h?t/2??inequality 1.

Abstract: Disclosed are a fluorescent complex comprising a rare earth atom and a ligand having a structure comprising a plurality of coordinating groups bonded to each other in a ring form, and a lighting system and a flashlight device using the same. This fluorescent complex can realize high-intensity fluorescence and a prolonged service life and gives a sharp fluorescence spectrum.

Abstract: In resonant elements 102 to 105 constituting a resonant circuit, an uncontrolled cross coupling which exists between two resonant elements is controlled by using a coupling element 106 which is newly arranged between the resonant elements, whereby it is possible to create a state where two resonant elements are not coupled with each other or a state where the amount of the coupling is reduced, which states are difficult to be realized on a plane. As a result, it is possible to improve characteristics of a planar filter.

Abstract: A refractive index variable element includes a structure including quantum dots having discrete energy levels and a dielectric matrix surrounding the quantum dots, and an electron injector injecting an electron into the quantum dots through the dielectric matrix.

Abstract: A refractive index variable element has a structure including a solid matrix, and one or more types of quantum dots dispersed in the solid matrix and having discrete occupied and unoccupied electron energy levels. The quantum dots perform a function of generating a pair of positive and negative charges upon irradiation with light, a function of trapping a positive charge, and a function of trapping a negative charge. The quantum dots performing the function of trapping a negative charge are selected from the group consisting of a combination of a negatively charged accepter and a positively charged atom, where the outermost electron shell of the positively charged atom is fully filled with electrons so that an additional electron occupies an upper different shell orbital when receives an electron, a metal chelate complex, and metallocene and derivatives thereof.

Abstract: A solid catalyst has a close-packed structure and has a first surface layer and a second surface layer, wherein the first surface layer includes platinum as a main component and the second surface layer contains PtaXb (wherein X is one element selected from the group consisting of Zr, Hf, Nb, Ta, Mo, and W; a+b=100; and 25?b?50); and a fuel cell includes the solid catalyst as an anode-side electrode catalyst.