Patents by Inventor Fumihiko Inoue

Fumihiko Inoue has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20030017669
    Abstract: A method of manufacturing a semiconductor device comprising forming a sacrificial layer including one or more conductive film on a semiconductor substrate, forming a cavity used as a template of electroplating in the sacrificial layer, growing a metal film on a surface of the cavity by the electroplating using the conductive layer as a seed layer so that a cylindrical or convex electrode can be formed, and removing the sacrificial layer so that the electrode can be formed.
    Type: Application
    Filed: July 16, 2002
    Publication date: January 23, 2003
    Inventors: Masahiro Kiyotoshi, Kazuhiro Eguchi, Masaaki Nakabayashi, Fumihiko Inoue
  • Publication number: 20020119648
    Abstract: The method for fabricating the semiconductor device comprises the step of: forming a gate insulation film 14 on a semiconductor substrate 10; forming a semiconductor layer 22 containing boron on the gate insulation film 14; forming a silicon nitride film 28 having an Si—H bond concentration in the film immediately after deposited which is below 4.3×1020 cm−3 measured by FT-IR; and patterning the silicon nitride film 28 and the semiconductor layer 22 to form a gate electrode 30 of a semiconductor layer 22 having the upper surface covered by the silicon nitride film 28. Whereby the release of hydrogen in the films in the thermal processing after the silicon nitride film has been formed can be decreased, and the boron penetration from the p-type gate electrode 30p can be suppressed.
    Type: Application
    Filed: August 28, 2001
    Publication date: August 29, 2002
    Applicant: Fujitsu Limited
    Inventors: Fumihiko Inoue, Masayuki Tanaka
  • Patent number: 6251743
    Abstract: Microstructures, including a plurality of spaced structural members which are bendable under an external force, undergo a treating method using a first treating liquid, to prevent permanent deformation, by removing the microstructure from the first treating liquid to an environment having a pressure less than atmospheric pressure; or moving the microstructure from the first treating liquid to a second treating liquid having a smaller surface tension than the first treating liquid, and then removing the microstructure from the second liquid; or drying the microstructure removed from the first treating liquid by exposing same to a liquid vapor having a smaller surface tension than the first treating liquid; or removing the microstructure from the first treating liquid to the atmosphere, and drying the microstructure using an energy beam of high intensity or an ultrasonic wave.
    Type: Grant
    Filed: May 5, 1998
    Date of Patent: June 26, 2001
    Assignees: Fujitsu Limited, Fujitsu VLSI Limited
    Inventors: Motoo Nakano, Hiroshi Nomura, Masaya Katayama, Toshimi Ikeda, Fumihiko Inoue, Junichi Ishikawa, Masahiro Kuwamura
  • Patent number: 5888633
    Abstract: A micro-structure including at least a first bendable member having first and second ends and being supported at the first end only, and either being spaced from a rigid component, or being spaced from a second bendable member also supported only at a first end thereof. The first member has a length L from the first end to the second end specified by one of the following equations: (a) for the first member adjacent to the rigid component: L<(2Edt.sup.3 /3P).sup.1/4, wherein E is a Young's modulus of a material of the first member; d is a distance of the space between the first member and the rigid component; t is a thickness of the first member; and P is an external pressure applied to the first member; or b) for the first member adjacent to the second member: L<(2Ed't.sup.3 /3P).sup.1/4, wherein E, t and P are as defined above; and d' is a distance of the space between the first and second members.
    Type: Grant
    Filed: March 12, 1997
    Date of Patent: March 30, 1999
    Assignee: Fujitsu Limited & Fujitsu VLSI Limited
    Inventors: Motoo Nakano, Hiroshi Nomura, Masaya Katayama, Toshimi Ikeda, Fumihiko Inoue, Junichi Ishikawa, Masahiro Kuwamura
  • Patent number: 5652167
    Abstract: Micro-structures comprising at least a structural member, which is liable to be bent under an external force and formed so as to leave a space between the member and another member liable to be bent and/or other rigid component, are successfully treated using a treating liquid, without suffering permanent deformation resulting from the use of the treating liquid, by removing the micro-structures from the liquid to an environment having a pressure less than the atmospheric pressure; or displacing the micro-structures from the treating liquid to another treating liquid having a smaller surface tension than that of the former liquid, and then removing the micro-structures from the latter liquid; or drying the micro-structures removed from the treating liquid by exposing the same to vapor of a liquid having a smaller surface tension than that of the treating liquid; or removing the micro-structures from the treating liquid to the atmosphere, and drying them using an energy beam of high intensity or an ultrasonic
    Type: Grant
    Filed: June 29, 1993
    Date of Patent: July 29, 1997
    Assignees: Fujitsu Ltd., Fujitsu VLSI Ltd.
    Inventors: Motoo Nakano, Hiroshi Nomura, Masaya Katayama, Toshimi Ikeda, Fumihiko Inoue, Junichi Ishikawa, Masahiro Kuwamura