Abstract: A cable with less residual bend includes a sheath as an outermost layer; and a thread for correcting a residual bend. The thread is provided inside the sheath and disposed in parallel with a center axis of the cable along a longitudinal direction of the cable.

Abstract: A conducting path includes a plurality of cables, and a cable clamp for clamping the plurality of cables together. The cable clamp includes a single metal plate molded along a perimeter of the plurality of cables, an attachment flange formed by overlapping both ends of the metal plate, and a cable supporting member for supporting the plurality of cables between the cable supporting member and the metal plate. The cable supporting member includes a coolant passage formed therein for passing a coolant to cool the plurality of cables in a longitudinal direction of the plurality of cables.

Abstract: A bend resistant cable includes a stranded wire including a plurality of child stranded conductors each having a plurality of strands, the plurality of child stranded conductors being circumferentially disposed and stranded. A stranding direction of the plurality of strands of the child stranded conductors circumferentially adjacent to each other is different from each other.

Abstract: A cable condition monitoring device for monitoring a damaged condition of a cable including a conductor part including a plurality of element wires and an insulating material part formed on a periphery of the conductor part includes a gas feeding device configured to feed a compressed gas into the conductor part, a pressure gauge configured to measure a pressure in the conductor part, and an insulating material part damage judgment part configured to judge whether the insulating material part is damaged or not based on the pressure measured by the pressure gauge.

Abstract: A three-conductor cable includes three cables disposed in a triangular form in a cross sectional view thereof, and a first refrigerant path at a cable center portion surrounded by the three cables along a longitudinal direction of the three cables for flowing a refrigerant for cooling the three cables therethrough. The first refrigerant path is formed along a part of each of the three cables in a cross sectional view thereof.

Abstract: A three-conductor cable includes three cables disposed in a triangular form in a cross sectional view thereof, and a first refrigerant path at a cable center portion surrounded by the three cables along a longitudinal direction of the three cables for flowing a refrigerant for cooling the three cables therethrough. The first refrigerant path is formed along a part of each of the three cables in a cross sectional view thereof.

Abstract: A conducting path includes a plurality of cables, and a cable clamp for clamping the plurality of cables together. The cable clamp includes a single metal plate molded along a perimeter of the plurality of cables, an attachment flange formed by overlapping both ends of the metal plate, and a cable supporting member for supporting the plurality of cables between the cable supporting member and the metal plate. The cable supporting member includes a coolant passage formed therein for passing a coolant to cool the plurality of cables in a longitudinal direction of the plurality of cables.

Abstract: A cable with less residual bend includes a sheath as an outermost layer; and a thread for correcting a residual bend. The thread is provided inside the sheath and disposed in parallel with a center axis of the cable along a longitudinal direction of the cable.

Abstract: To smoothly deliver a thermal energy required in an active site of a catalyst carried on a carrier. A method of manufacturing a catalyst carrier of the present invention includes the steps of: forming a mixed thin film in which at least metal and ceramics are mixed on a metal base, by spraying aerosol, with metal powders and ceramic powders mixed therein, on the metal base; and making the mixed thin film porous, by dissolving the metal of the mixed thin film into acid or alkaline solution to remove this metal.

Abstract: A piezoelectric thin film element includes a bottom electrode, a piezoelectric layer, and a top electrode on a substrate. The piezoelectric layer includes, as a main phase, a perovskite-type oxide. The bottom electrode has a surface roughness of not more than 0.86 nm in arithmetic mean roughness Ra or not more than 1.1 nm in root mean square roughness Rms. The bottom electrode has a (111) preferential orientation in a direction perpendicular to the substrate.

Abstract: A piezoelectric thin film element has a piezoelectric thin film on a substrate, the piezoelectric thin film has a (K1-x,Nax)NbO3thin film expressed by a compositional formula (K1-xNax)NbO3(0 <x <1) with a perovskite structure, and a ratio of an out-of-plane directional lattice constant c to an in-plane directional lattice constant a of the thin film is in a range of 0.98 ?c/a ?1.01.

Abstract: A piezoelectric thin film element includes a substrate, a lower electrode, a piezoelectric thin film, and an upper electrode. The lower electrode, the piezoelectric thin film and the upper electrode are formed on the substrate. The piezoelectric thin film includes a polycrystal thin film including crystal grains, an alkali niobium oxide based perovskite structure represented by a general formula: (K1-xNax)NbO3 (0.4<x<0.7), a film thickness of not less than 1 ?m and not more than 10 ?m, a columnar structure configured by the crystal grains, a majority of the crystal grains including a shape in a cross-section direction thereof longer than in a plane direction of the substrate, and an average crystal grain size of not less than 0.1 ?m and not more than 1.0 ?m in the plane direction of the substrate.

Abstract: A piezoelectric thin film element includes a bottom electrode, a piezoelectric layer and a top electrode on a substrate. The piezoelectric layer includes as a main phase a perovskite-type oxide represented by (NaxKyLiz)NbO3 (0?x?1, 0?y?1, 0?z?0.2, x+y+z=1), and the bottom electrode includes a surface roughness of not more than 0.86 nm in arithmetic mean roughness Ra or not more than 1.1 nm in root mean square roughness Rms.

Abstract: A sensor for detecting a physical quantity includes a piezoelectric thin film device having a lower electrode, a piezoelectric thin film and an upper electrode, and a voltage detecting device connected between the lower and upper electrodes of the piezoelectric thin film device. The piezoelectric thin film is formed of an alkali niobium oxide-based perovskite material expressed by (K1-xNax)NbO3 (0<x<1), and a (001)KNN plane diffraction peak of the piezoelectric thin film indicates an angle 2? from 22.1° to 22.5° in an X-ray diffraction 2?/? measurement to a surface of the piezoelectric thin film, and the (001)KNN plane diffraction peak occupies 80% or more of diffraction peaks of the piezoelectric thin film.

Abstract: A bend resistant cable includes a stranded wire including a plurality of child stranded conductors each having a plurality of strands, the plurality of child stranded conductors being circumferentially disposed and stranded. A stranding direction of the plurality of strands of the child stranded conductors circumferentially adjacent to each other is different from each other.

Abstract: A substrate has a first thermal expansion coefficient and a piezoelectric thin film has a second thermal expansion coefficient. The piezoelectric thin film is mainly composed of a potassium sodium niobate (K,Na)NbO3 with a perovskite structure. A curvature radius of a warping of the substrate provided with the piezoelectric thin film due to difference between the first and the second thermal expansion coefficients is 10 m or more at room temperature. The piezoelectric thin film has a thickness of 0.2 ?m to 10 ?m. The piezoelectric thin film is oriented in one of plane orientations (001), (110), and (111).

Abstract: A sensor for detecting a physical quantity includes a piezoelectric thin film device having a lower electrode, a piezoelectric thin film and an upper electrode, and a voltage detecting device connected between the lower and upper electrodes of the piezoelectric thin film device. The piezoelectric thin film is formed of an alkali niobium oxide-based perovskite material expressed by (K1-xNax)NbO3 (0<x<1), and a (001)KNN plane diffraction peak of the piezoelectric thin film indicates an angle 2? from 22.1° to 22.5° in an X-ray diffraction 2?/? measurement to a surface of the piezoelectric thin film, and the (001)KNN plane diffraction peak occupies 80% or more of diffraction peaks of the piezoelectric thin film.

Abstract: A piezoelectric film formed above a Si substrate. The piezoelectric film is formed of a potassium sodium niobate expressed by a general formula (K,Na)NbO3 with perovskite structure. A film thickness of the piezoelectric film is within a range from 0.3 ?m to 10 ?m. An intermediate film is formed between the Si substrate and the piezoelectric film. The intermediate film generates a stress in a compressive direction in the piezoelectric film.

Abstract: A sensor or actuator includes a piezoelectric thin film device including a lower electrode, a piezoelectric thin film and an upper electrode, and a voltage detecting device connected between the lower and upper electrodes of the piezoelectric thin film device. The piezoelectric thin film is formed of an alkali niobium oxide-based perovskite material expressed by (K1-xNax)NbO3 (0<x<1), and a dependency of the piezoelectric constant d31 of the piezoelectric thin film on applied electric field [=|(d31 under 70 kV/cm)?(d31 under 7 kV/cm)|/|d31 under 70 kV/cm|] is 0.20 or less.

Abstract: A piezoelectric thin film device according to the present invention comprises a lower electrode, a piezoelectric thin film and a upper electrode, in which the piezoelectric thin film is formed of an alkali niobium oxide-based perovskite material expressed by (K1-xNax)NbO3 (0<x<1), and in which a (001)KNN plane diffraction peak of the piezoelectric thin film indicates an angle 2? from 22.1° to 22.5° in an X-ray diffraction 2?/? measurement to a surface of the piezoelectric thin film, and the (001)KNN plane diffraction peak occupies 80% or more of diffraction peaks of the piezoelectric thin film.