Abstract: A change in switching time due to temperature change is suppressed. A switching circuitry is provided with a resistance component having opposite characteristics to temperature dependence of a gate current of a power transistor which is switching-controlled by the switching circuitry, and a change in a gate current due to the temperature change is suppressed by a change in the above-described resistance component due to the temperature change.

Abstract: A semiconductor device includes a semiconductor chip provided inside with a p-n junction, an opaque sealing resin covering a surface of the semiconductor chip, and a functional region arranged between the semiconductor chip and the sealing resin and configured to prevent light, which is generated when a forward current flows through the p-n junction and has a particular wavelength causing deterioration of the sealing resin, from reaching the sealing resin.

Abstract: A semiconductor device includes a semiconductor chip provided inside with a p-n junction, an opaque sealing resin covering a surface of the semiconductor chip, and a functional region arranged between the semiconductor chip and the sealing resin and configured to prevent light, which is generated when a forward current flows through the p-n junction and has a particular wavelength causing deterioration of the sealing resin, from reaching the sealing resin.

Abstract: An object of the present invention is to stabilize and strengthen the strength of a bonding part between a metal electrode on a semiconductor chip and metal wiring connected thereto using a simple structure. Provided is a semiconductor device including a metal layer 130 on a surface of a metal electrode 120 formed on a semiconductor chip 110, the metal layer 130 consisting of a metal or an alloy different from a constituent metal of the metal electrode 120, metal wiring 140 is connected to the metal layer 130 via a bonding part 150, wherein the constituent metal of the metal layer 130 is a metal or an alloy different from the constituent metal of the metal electrode 120, and the bonding part 150 has an alloy region harder than the metal wiring 140.

Abstract: Provided are a through electrode including an organic side-wall insulating film, capable of eliminating a barrier layer and achieving satisfactory mechanical reliability and electrical reliability and a manufacturing method thereof, and a semiconductor device and a manufacturing method thereof. According to one aspect of the present invention, a through electrode disposed in a semiconductor substrate is provided, including: a copper layer in the semiconductor substrate; and a side-wall insulating film that is disposed between the copper layer and the semiconductor substrate so as to be in contact with the copper layer and the semiconductor substrate, the side-wall insulating film being represented by the following chemical formula (1).

Abstract: An object of the present invention is to stabilize and strengthen the strength of a bonding part between a metal electrode on a semiconductor chip and metal wiring connected thereto using a simple structure. Provided is a semiconductor device including a metal layer 130 on a surface of a metal electrode 120 formed on a semiconductor chip 110, the metal layer 130 consisting of a metal or an alloy different from a constituent metal of the metal electrode 120, metal wiring 140 is connected to the metal layer 130 via a bonding part 150, wherein the constituent metal of the metal layer 130 is a metal or an alloy different from the constituent metal of the metal electrode 120, and the bonding part 150 has an alloy region harder than the metal wiring 140.

Abstract: A method of manufacturing a semiconductor device according to the present invention comprises: a bump forming step of forming a bump electrode 100 on a semiconductor chip 1, the bump electrode 100 protruding in a substantially conical shape; a pad forming step of forming a pad electrode 200 on a substrate 10, the pad electrode 200 having a recess 210 with inner lateral surfaces thereof defining a substantially pyramidal shape or a prism shape; a pressing step of pressing the bump electrode 100 and the pad electrode 200 in a direction which brings them closer to each other, with the bump electrode 100 being inserted in the recess 210 so that the central axis of the bump electrode 100 and the central axis of the recess 210 coincide with each other; and an ultrasonic joining step of joining the bump electrode 100 and the pad electrode 200 by vibrating at least one of the bump electrode 100 and the pad electrode 200 using ultrasonic waves.

Abstract: Provided are a through electrode including an organic side-wall insulating film, capable of eliminating a barrier layer and achieving satisfactory mechanical reliability and electrical reliability and a manufacturing method thereof, and a semiconductor device and a manufacturing method thereof. According to one aspect of the present invention, a through electrode disposed in a semiconductor substrate is provided, including: a copper layer in the semiconductor substrate; and a side-wall insulating film that is disposed between the copper layer and the semiconductor substrate so as to be in contact with the copper layer and the semiconductor substrate, the side-wall insulating film being represented by the following chemical formula (1).

Abstract: A method of manufacturing a semiconductor device according to the present invention comprises: a bump forming step of forming a bump electrode 100 on a semiconductor chip 1, the bump electrode 100 protruding in a substantially conical shape; a pad forming step of forming a pad electrode 200 on a substrate 10, the pad electrode 200 having a recess 210 with inner lateral surfaces thereof defining a substantially pyramidal shape or a prism shape; a pressing step of pressing the bump electrode 100 and the pad electrode 200 in a direction which brings them closer to each other, with the bump electrode 100 being inserted in the recess 210 so that the central axis of the bump electrode 100 and the central axis of the recess 210 coincide with each other; and an ultrasonic joining step of joining the bump electrode 100 and the pad electrode 200 by vibrating at least one of the bump electrode 100 and the pad electrode 200 using ultrasonic waves.