Abstract: A diamond electrode includes a conductive silicon substrate having a plurality of pores. The diamond electrode also includes a conductive diamond covering the conductive silicon substrate. The inner wall surfaces of the plurality of pores are at an angle of 60° to 85° with respect to a substrate of the conductive silicon substrate.

Abstract: The present invention provides a diamond electrode that, in waste water treatment or production of functional water by using electrolysis, does not cause contamination of a solution or release of toxic substances, achieves enhancement of the energy efficiency, has excellent durability, and can endure prolonged use without damage. The present invention further provides a treatment device where the above electrode is used, and a method for manufacturing the above electrode. In a diamond electrode according to the present invention, the electrode includes a conductive diamond film covering one surface of a substrate. Assuming that the thickness of the substrate is T (?m) and the thickness of the conductive diamond film is t1 (?m), the ratio between them is 0.0010?t1/T?0.022 and 10?t1?70.

Abstract: A diamond electrode includes a conductive silicon substrate having a plurality of pores. The diamond electrode also includes a conductive diamond covering the conductive silicon substrate. The inner wall surfaces of the plurality of pores are at an angle of 60° to 85° with respect to a substrate of the conductive silicon substrate.

Abstract: The superconductive thin film is made in the procedures that; in a vacuum vessel having an internal pressure maintained at least lower than 10.sup.-2 torr, each metal of the component elements of the superconductive thin film to be made is charged into a crucible so as to be heated as a simple substance respectively so that the evaporated metallic element is spouted from the crucible as a cluster beam, the spouted evaporation metallic element is ionized and accelerated through an electric field, impinging to a substrate while spouting oxygen gas toward the substrate, controlling the heating of the crucible so that the amount of the respective metallic evaporation beams is made to be a predetermined mole ratio, whereby the superconductive thin film is formed on the substrate.

Abstract: A process for preparing a large ZnSe single crystal, comprising vacuum sealing polycrystalline ZnSe prepared by a chemical vapor deposition in a capable and hot isostatically pressing polycrystalline ZnSe in the capsule, by which the ZnSe single crystal having such high qualities as to be used as a substrate on which an epitaxial layer of ZnSe can be grown.