Patents by Inventor Fumio Kugiya

Fumio Kugiya has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7227818
    Abstract: A method of recording data into a recording medium by forming a recording region which is physically different from the nonrecorded portions is disclosed. The optical data recording/reproducing method includes a first trial writing operation in which trial writing data are recorded into the recording medium while changing the recording power conditions, the recorded trial writing data are reproduced, and the reproduced trial writing data are evaluated to set an optimum recording power. The method also includes a second trial writing operation in which trial writing data are recorded into the recording medium while changing the servo conditions, the recorded trial writing data are reproduced, and the reproduced trial writing data are evaluated to set optimum servo conditions.
    Type: Grant
    Filed: May 8, 1995
    Date of Patent: June 5, 2007
    Assignee: Hitachi, Ltd.
    Inventors: Tsuyoshi Toda, Takeshi Maeda, Fumio Kugiya, Hiroshi Ide, Hiroyuki Tsuchinaga, Fumiyoshi Kirino, Toshimitsu Kaku, Kazuo Shigematsu
  • Patent number: 7159303
    Abstract: The magnetoresistance effect element is of a multilayered structure having at least magnetic layers and an intermediate layer of an insulating material, a semiconductor or an antiferromagnetic material against the magnetic layers, and the magnetoresistance effect element has terminals formed at least on the opposite magnetic layers, respectively, so that a current flows in the intermediate layer. The film surfaces of all the magnetic layers constituting the magnetoresistance effect element are opposed substantially at right angles to the recording surface of a magnetic recording medium. Therefore, the area of the magnetic layers facing the recording surface of the magnetic recording medium can be extremely reduced, and thus the magnetic field from a very narrow region of the high-density recorded magnetic recording medium can be detected by the current which has a tunneling characteristic and passes through the intermediate layer.
    Type: Grant
    Filed: March 9, 2006
    Date of Patent: January 9, 2007
    Assignee: Hitachi Global Storage Technologies, Ltd.
    Inventors: Ryoichi Nakatani, Masahiro Kitada, Naoki Koyama, Isamu Yuito, Hisashi Takano, Eijin Moriwaki, Mikio Suzuki, Masaaki Futamoto, Fumio Kugiya, Yoshibumi Matsuda, Kazuo Shiiki, Yoshinori Miyamura, Kyo Akagi, Takeshi Nakao, Hirotsugu Fukuoka, Takayuki Munemoto, Tokuho Takagaki, Toshio Kobayashi, Hideo Tanabe, Noboru Shimizu
  • Publication number: 20060152862
    Abstract: The magnetoresistance effect element is of a multilayered structure having at least magnetic layers and an intermediate layer of an insulating material, a semiconductor or an antiferromagnetic material against the magnetic layers, and the magnetoresistance effect element has terminals formed at least on the opposite magnetic layers, respectively, so that a current flows in the intermediate layer. The film surfaces of all the magnetic layers constituting the magnetoresistance effect element are opposed substantially at right angles to the recording surface of a magnetic recording medium. Therefore, the area of the magnetic layers facing the recording surface of the magnetic recording medium can be extremely reduced, and thus the magnetic field from a very narrow region of the high-density recorded magnetic recording medium can be detected by the current which has a tunneling characteristic and passes through the intermediate layer.
    Type: Application
    Filed: March 9, 2006
    Publication date: July 13, 2006
    Inventors: Ryoichi Nakatani, Masahiro Kitada, Naoki Koyama, Isamu Yuito, Hisashi Takano, Eijin Moriwaki, Mikio Suzuki, Masaaki Futamoto, Fumio Kugiya, Yoshibumi Matsuda, Kazuo Shiiki, Yoshinori Miyamura, Kyo Akagi, Takeshi Nakao, Hirotsugu Fukuoka, Takayuki Munemoto, Tokuho Takagaki, Toshio Kobayashi, Hideo Tanabe, Noboru Shimizu
  • Patent number: 7054120
    Abstract: The magnetoresistance effect element is of a multilayered structure having at least magnetic layers and an intermediate layer of an insulating material, a semiconductor or an antiferromagnetic material against the magnetic layers, and the magnetoresistance effect element has terminals formed at least on the opposite magnetic layers, respectively, so that a current flows in the intermediate layer. The film surfaces of all the magnetic layers constituting the magnetoresistance effect element are opposed substantially at right angles to the recording surface of a magnetic recording medium. Therefore, the area of the magnetic layers facing the recording surface of the magnetic recording medium can be extremely reduced, and thus the magnetic field from a very narrow region of the high-density recorded magnetic recording medium can be detected by the current which has a tunneling characteristic and passes through the intermediate layer.
    Type: Grant
    Filed: November 5, 2003
    Date of Patent: May 30, 2006
    Assignee: Hitachi Global Storage Technologies Japan, Ltd.
    Inventors: Ryoichi Nakatani, Masahiro Kitada, Naoki Koyama, Isamu Yuito, Hisashi Takano, Eijin Moriwaki, Mikio Suzuki, Masaaki Futamoto, Fumio Kugiya, Yoshibumi Matsuda, Kazuo Shiiki, Yoshinori Miyamura, Kyo Akagi, Takeshi Nakao, Hirotsugu Fukuoka, Takayuki Munemoto, Tokuho Takagaki, Toshio Kobayashi, Hideo Tanabe, Noboru Shimizu
  • Publication number: 20040090850
    Abstract: The magnetoresistance effect element is of a multilayered structure having at least magnetic layers and an intermediate layer of an insulating material, a semiconductor or an antiferromagnetic material against the magnetic layers, and the magnetoresistance effect element has terminals formed at least on the opposite magnetic layers, respectively, so that a current flows in the intermediate layer. The film surfaces of all the magnetic layers constituting the magnetoresistance effect element are opposed substantially at right angles to the recording surface of a magnetic recording medium. Therefore, the area of the magnetic layers facing the recording surface of the magnetic recording medium can be extremely reduced, and thus the magnetic field from a very narrow region of the high-density recorded magnetic recording medium can be detected by the current which has a tunneling characteristic and passes through the intermediate layer.
    Type: Application
    Filed: November 5, 2003
    Publication date: May 13, 2004
    Applicant: Hitachi, Ltd.
    Inventors: Ryoichi Nakatani, Masahiro Kitada, Naoki Koyama, Isamu Yuito, Hisashi Takano, Eijin Moriwaki, Mikio Suzuki, Masaaki Futamoto, Fumio Kugiya, Yoshibumi Matsuda, Kazuo Shiiki, Yoshinori Miyamura, Kyo Akagi, Takeshi Nakao, Hirotsugu Fukuoka, Takayuki Munemoto, Tokuho Takagaki, Toshio Kobayashi, Hideo Tanabe, Noboru Shimizu
  • Patent number: 6687099
    Abstract: The magnetoresistance effect element is of a multilayered structure having at least magnetic layers and an intermediate layer of an insulating material, a semiconductor or an antiferromagnetic material against the magnetic layers, and the magnetoresistance effect element has terminals formed at least on the opposite magnetic layers, respectively, so that a all the magnetic layers constituting the magnetoresistance effect element are opposed substantially at right angles to the recording surface of a magnetic recording medium. Therefore, the area of the magnetic layers facing the recording surface of the magnetic recording medium can be extremely reduced, and thus the magnetic field from a very narrow region of the high-density recorded magnetic recording medium can be detected by the current which has a tunneling characteristic and passes through the intermediate layer.
    Type: Grant
    Filed: October 15, 2002
    Date of Patent: February 3, 2004
    Assignee: Hitachi, Ltd.
    Inventors: Ryoichi Nakatani, Masahiro Kitada, Naoki Koyama, Isamu Yuito, Hisashi Takano, Eijin Moriwaki, Mikio Suzuki, Masaaki Futamoto, Fumio Kugiya, Yoshibumi Matsuda, Kazuo Shiiki, Yoshinori Miyamura, Kyo Akagi, Takeshi Nakao, Hirotsugu Fukuoka, Takayuki Munemoto, Tokuho Takagaki, Toshio Kobayashi, Hideo Tanabe, Noboru Shimizu
  • Publication number: 20030117750
    Abstract: The magnetoresistance effect element is of a multilayered structure having at least magnetic layers and an intermediate layer comprised of an insulating material, a semicondcutor or an antiferromagnetic material against said magnetic layers, and the magnetoresistance effect element has terminals formed with at least on the opposite magnetic layers, respectively, so that a current is sure to be flowed in the intermediate layer. The film surfaces of all the magnetic layers constituting the magnetoresistance effect element are opposed substantially at right angles to the recording surface of a magnetic recording medium. Therefore, the area of the magnetic layers facing the recording surface of the magnetic recording medium can be extremely reduced, and thus the magnetic field from a very narrow region of the high-density recorded magnetic recording medium can be detected by the current which has a tunneling characteristic and passes through the intermediate layer.
    Type: Application
    Filed: October 15, 2002
    Publication date: June 26, 2003
    Applicant: Hitachi, Ltd.
    Inventors: Ryoichi Nakatani, Masahiro Kitada, Naoki Koyama, Isamu Yuito, Hisashi Takano, Eijin Moriwaki, Mikio Suzuki, Masaaki Futamoto, Fumio Kugiya, Yoshibumi Matsuda, Kazuo Shiiki, Yoshinori Miyamura, Kyo Akagi, Takeshi Nakao, Hirotsugu Fukuoka, Takayuki Munemoto, Tokuho Takagaki, Toshio Kobayashi, Hideo Tanabe, Noboru Shimizu
  • Patent number: 6490123
    Abstract: A magnetic disk drive has a housing for a 3.5 inch form factor and disk media of a diameter for a 2.5 inch form factor. The smaller disk media rotate at a high speed while consuming low electric lower and generating less heat while providing for quick access speeds. Usually, when the magnetic disk media are rotated at a higher speed, the electric power consumption and heat generation are increased because of the load increase. This problem is avoided with the use of cooling fins placed about the periphery of the disk media. Further, the smaller size disk media enable a decrease in torque loss during on-load rotation with the media, and a decrease of electric current to the spindle motor during rotation.
    Type: Grant
    Filed: November 5, 1998
    Date of Patent: December 3, 2002
    Assignee: Hitachi, Ltd.
    Inventors: Nobuyuki Okunaga, Masao Iwakura, Kazuo Nakagoshi, Takuji Ogawa, Chuma Akira, Fumio Kugiya, Tomio Suzuki, Toshiaki Kojima, Kazuo Sakai, Naoki Kodama, Tatsuya Ishigaki
  • Patent number: 6483677
    Abstract: The magnetoresistance effect element is of a multilayered structure having at least magnetic layers and an intermediate layer of an insulating material, a semiconductor or an antiferromagnetic material against the magnetic layers, and the magnetoresistance effect element has terminals formed at least on the opposite magnetic layers, respectively, so that a current flows in the intermediate layer. The film surfaces of all the magnetic layers constituting the magnetoresistance effect element are opposed substantially at right angles to the recording surface of a magnetic recording medium. Therefore, the area of the magnetic layers facing the recording surface of the magnetic recording medium can be extremely reduced, and thus the magnetic field from a very narrow region of the high-density recorded magnetic recording medium can be detected by the current which has a tunneling characteristic and passes through the intermediate layer.
    Type: Grant
    Filed: August 20, 2001
    Date of Patent: November 19, 2002
    Assignee: Hitachi, Ltd.
    Inventors: Ryoichi Nakatani, Masahiro Kitada, Naoki Koyama, Isamu Yuito, Hisashi Takano, Eijin Moriwaki, Mikio Suzuki, Masaaki Futamoto, Fumio Kugiya, Yoshibumi Matsuda, Kazuo Shiiki, Yoshinori Miyamura, Kyo Akagi, Takeshi Nakao, Hirotsugu Fukuoka, Takayuki Munemoto, Tokuho Takagaki, Toshio Kobayashi, Hideo Tanabe, Noboru Shimizu
  • Publication number: 20020093760
    Abstract: A magnetic disk drive that shape coefficient is 3.5 inches are provided, which is designed as rotating magnetic media in a high speed in order to consume a low electric power, to generate a less heat, and to access more quickly.
    Type: Application
    Filed: March 8, 2002
    Publication date: July 18, 2002
    Applicant: Hitachi, Ltd.
    Inventors: Nobuyuki Okunaga, Masao Iwakura, Kazuo Nakagoshi, Takuji Ogawa, Chuma Akira, Fumio Kugiya, Tomio Suzuki, Toshiaki Kojima, Kazuo Sakai, Naoki Kodama, Tatsuya Ishigaki
  • Publication number: 20020093758
    Abstract: A magnetic disk drive that shape coefficient is 3.5 inches are provided, which is designed as rotating magnetic media in a high speed in order to consume a low electric power, to generate a less heat, and to access more quickly.
    Type: Application
    Filed: March 8, 2002
    Publication date: July 18, 2002
    Applicant: Hitachi, Ltd.
    Inventors: Nobuyuki Okunaga, Masao Iwakura, Kazuo Nakagoshi, Takuji Ogawa, Chuma Akira, Fumio Kugiya, Tomio Suzuki, Toshiaki Kojima, Kazuo Sakai, Naoki Kodama, Tatsuya Ishigaki
  • Publication number: 20020093759
    Abstract: A magnetic disk drive that shape coefficient is 3.5 inches are provided, which is designed as rotating magnetic media in a high speed in order to consume a low electric power, to generate a less heat, and to access more quickly.
    Type: Application
    Filed: March 8, 2002
    Publication date: July 18, 2002
    Applicant: Hitachi, Ltd.
    Inventors: Nobuyuki Okunaga, Masao Iwakura, Kazuo Nakagoshi, Takuji Ogawa, Chuma Akira, Fumio Kugiya, Tomio Suzuki, Toshiaki Kojima, Kazuo Sakai, Naoki Kodama, Tatsuya Ishigaki
  • Publication number: 20020018325
    Abstract: The magnetoresistance effect element is of a multilayered structure having at least magnetic layers and an intermediate layer comprised of an insulating material, a semicondcutor or an antiferromagnetic material against said magnetic layers, and the magnetoresistance effect element has terminals formed with at least on the opposite magnetic layers, respectively, so that a current is sure to be flowed in the intermediate layer. The film surfaces of all the magnetic layers constituting the magnetoresistance effect element are opposed substantially at right angles to the recording surface of a magnetic recording medium. Therefore, the area of the magnetic layers facing the recording surface of the magnetic recording medium can be extremely reduced, and thus the magnetic field from a very narrow region of the high-density recorded magnetic recording medium can be detected by the current which has a tunneling characteristic and passes through the intermediate layer.
    Type: Application
    Filed: August 20, 2001
    Publication date: February 14, 2002
    Applicant: Hitachi, Ltd.
    Inventors: Ryoichi Nakatani, Masahiro Kitada, Naoki Koyama, Isamu Yuito, Hisashi Takano, Eijin Moriwaki, Mikio Suzuki, Masaaki Futamoto, Fumio Kugiya, Yoshibumi Matsuda, Kazuo Shiiki, Yoshinori Miyamura, Kyo Akagi, Takeshi Nakao, Hirotsugu Fukuoka, Takayuki Munemoto, Tokuho Takagaki, Toshio Kobayashi, Hideo Tanabe, Noboru Shimizu
  • Patent number: 6278593
    Abstract: The magnetoresistance effect element is of a multilayered structure having at least magnetic layers and an intermediate layer of an insulating material, a semicondutor or an antiferromagnetic material against the magnetic layers, and the magneto-resistance effect element has terminals formed at least on the opposite magnetic layers, respectively, so that a current flows in the intermediate layer. The film surfaces of all the magnetic layers constituting the magnetoresistance effect element are opposed substantially at right angles to the recording surface of a magnetic recording medium. Therefore, the area of the magnetic layers facing the recording surface of the magnetic recording medium can be extremely reduced, and thus the magnetic field from a very narrow region of the high-density recorded magnetic recording medium can be detected by the current which has a tunneling characteristic and passes through the intermediate layer.
    Type: Grant
    Filed: December 21, 1999
    Date of Patent: August 21, 2001
    Assignee: Hitachi, Ltd.
    Inventors: Ryoichi Nakatani, Masahiro Kitada, Naoki Koyama, Isamu Yuito, Hisashi Takano, Eijin Moriwaki, Mikio Suzuki, Masaaki Futamoto, Fumio Kugiya, Yoshibumi Matsuda, Kazuo Shiiki, Yoshinori Miyamura, Kyo Akagi, Takeshi Nakao, Hirotsugu Fukuoka, Takayuki Munemoto, Tokuho Takagaki, Toshio Kobayashi, Hideo Tanabe, Noboru Shimizu
  • Patent number: 6011674
    Abstract: The magnetoresistance effect element is of a multilayered structure having at least magnetic layers and an intermediate layer of an insulating material, a semiconductor or an antiferromagnetic material against the magnetic layers, and the magnetoresistance effect element has terminals formed at least on the opposite magnetic layers, respectively, so that a current flows in the intermediate layer. The film surfaces of all the magnetic layers constituting the magnetoresistance effect element are opposed substantially at right angles to the recording surface of a magnetic recording medium. Therefore, the area of the magnetic layers facing the recording surface of the magnetic recording medium can be extremely reduced, and thus the magnetic field from a very narrow region of the high-denisity recorded magnetic recording medium can be detected by the current which has a tunneling characteristic and passes through the intermediate layer.
    Type: Grant
    Filed: April 2, 1996
    Date of Patent: January 4, 2000
    Assignee: Hitachi, Ltd.
    Inventors: Ryoichi Nakatani, Masahiro Kitada, Naoki Koyama, Isamu Yuito, Hisashi Takano, Eijin Moriwaki, Mikio Suzuki, Masaaki Futamoto, Fumio Kugiya, Yoshibumi Matsuda, Kazuo Shiiki, Yoshinori Miyamura, Kyo Akagi, Takeshi Nakao, Hirotsugu Fukuoka, Takayuki Munemoto, Tokuho Takagaki, Toshio Kobayashi, Hideo Tanabe, Noboru Shimizu
  • Patent number: 5848045
    Abstract: A super high density optical disk apparatus is obtained by using an exchangeable recording medium having a recording capacity of at least 1.5 Gb/in.sup.2 in an optical recording and reading apparatus for recording or reading at least using a laser beam or by using one of means which can record on a recording medium only once and means which can record at least two times repeatedly as recording means to be used.
    Type: Grant
    Filed: November 12, 1997
    Date of Patent: December 8, 1998
    Assignee: Hitachi, Ltd.
    Inventors: Fumiyoshi Kirino, Tsuyoshi Toda, Hiroshi Ide, Hisataka Sugiyama, Atsushi Saito, Hiroyuki Tsuchinaga, Takeshi Maeda, Fumio Kugiya, Toshimitsu Kaku, Seiichi Mita, Kazuo Shigematsu, Yasuhide Ouchi
  • Patent number: 5766718
    Abstract: It is disclosed that a longitudinal magnetic recording medium and apparatus has recording sections having longitudinal magnetic films magnetically isolated in a recording direction. The magnetically isolated recording sections can record a single bit each so that the longitudinal magnetic recording medium can remove the irregular domain boundary of its own caused on boundaries of magnetization reversals in the recording direction. This can improve the signal-to-media noise ratio to a great extent in writing and reading.
    Type: Grant
    Filed: January 31, 1994
    Date of Patent: June 16, 1998
    Assignee: Hitachi, Ltd.
    Inventors: Yoshibumi Matsuda, Masaaki Futamoto, Fumio Kugiya, Yoshinori Miyamura, Takeshi Nakano, Hisashi Takano, Kyo Akagi, Mikio Suzuki, Yasuhide Ouchi
  • Patent number: 5736235
    Abstract: A magnetic recording medium, its fabrication method, and a magnetic recording apparatus in which both saturation induction and coercive force of a magnetic film is made high as they are near a surface of the recording medium. A high density information recording can be made higher than 50 kFCI in linear recording density even for spacing around 0.2 .mu.m.
    Type: Grant
    Filed: August 6, 1991
    Date of Patent: April 7, 1998
    Assignee: Hitachi, Ltd.
    Inventors: Yoshibumi Matsuda, Masaaki Futamoto, Yoshinori Miyamura, Tokuho Takagaki, Hisashi Takano, Fumio Kugiya, Takeshi Nakao, Kyo Akagi, Mikio Suzuki, Hirotsugu Fukuoka, Takayuki Munemoto
  • Patent number: 5726837
    Abstract: The magnetoresistance effect element is of a multilayered structure having at least magnetic layers and an intermediate layer of an insulating material, a semiconductor or an antiferromagnetic material against the magnetic layers, and the magnetoresistance effect element has terminals formed at least on the opposite magnetic layers, respectively, so that a current flows in the intermediate layer. The film surfaces of all the magnetic layers constituting the magnetoresistance effect element are opposed substantially at right angles to the recording surface of a magnetic recording medium. Therefore, the area of the magnetic layers facing the recording surface of the magnetic recording medium can be extremely reduced, and thus the magnetic field from a very narrow region of the high-density recorded magnetic recording medium can be detected by the current which has a tunneling characteristic and passes through the intermediate layer.
    Type: Grant
    Filed: October 24, 1994
    Date of Patent: March 10, 1998
    Assignee: Hitachi, Ltd.
    Inventors: Ryoichi Nakatani, Masahiro Kitada, Naoki Koyama, Isamu Yuito, Hisashi Takano, Eijin Moriwaki, Mikio Suzuki, Masaaki Futamoto, Fumio Kugiya, Yoshibumi Matsuda, Kazuo Shiiki, Yoshinori Miyamura, Kyo Akagi, Takeshi Nakao, Hirotsugu Fukuoka, Takayuki Munemoto, Tokuho Takagaki, Toshio Kobayashi, Hideo Tanabe, Noboru Shimizu
  • Patent number: 5703855
    Abstract: A super high density optical disk apparatus is obtained by using an exchangeable recording medium having a recording capacity of at least 1.5 Gb/in.sup.2 in an optical recording and reading apparatus for recording or reading at least using a laser beam or by using one of an element which can record on a recording medium only once and another element which can record at least two times repeatedly as recording elements to be used.
    Type: Grant
    Filed: March 30, 1994
    Date of Patent: December 30, 1997
    Assignee: Hitachi, Ltd.
    Inventors: Fumiyoshi Kirino, Tsuyoshi Toda, Horishi Ide, Hisataka Sugiyama, Atsushi Saito, Hiroyuki Tsuchinaga, Takeshi Maeda, Fumio Kugiya, Toshimitsu Kaku, Seiichi Mita, Kazuo Shigematsu, Yasuhide Ouchi