Patents by Inventor Fumio Ueno

Fumio Ueno has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20220045251
    Abstract: A light emitting device, according to the present embodiment, has a light emitting panel, a flexible wiring substrate, a mold resin and a protective tape. The light emitting panel has a first substrate, which is transparent to light, a plurality of conductor patterns, which are formed on a surface of the first substrate, a plurality of light emitting elements, which are connected to any of the conductor patterns, and a resin layer, which holds the light emitting elements on the first substrate. The flexible wiring substrate has a circuit pattern that is electrically connected with an exposed part of the conductor patterns. The mold resin covers the exposed part of the conductor patterns and an exposed part of the circuit pattern. The protective tape covers the mold resin, and is wound around a joint part of the light emitting panel and the flexible wiring substrate.
    Type: Application
    Filed: October 27, 2021
    Publication date: February 10, 2022
    Applicant: TOSHIBA HOKUTO ELECTRONICS CORPORATION
    Inventors: Naoki TAKOJIMA, Kairi MAKITA, Fumio UENO
  • Patent number: 11189768
    Abstract: A light emitting device, according to the present embodiment, has a light emitting panel, a flexible wiring substrate, a mold resin and a protective tape. The light emitting panel has a first substrate, which is transparent to light, a plurality of conductor patterns, which are formed on a surface of the first substrate, a plurality of light emitting elements, which are connected to any of the conductor patterns, and a resin layer, which holds the light emitting elements on the first substrate. The flexible wiring substrate has a circuit pattern that is electrically connected with an exposed part of the conductor patterns. The mold resin covers the exposed part of the conductor patterns and an exposed part of the circuit pattern. The protective tape covers the mold resin, and is wound around a joint part of the light emitting panel and the flexible wiring substrate.
    Type: Grant
    Filed: December 13, 2019
    Date of Patent: November 30, 2021
    Assignee: Toshiba Hokuto Electronics Corporation
    Inventors: Naoki Takojima, Kairi Makita, Fumio Ueno
  • Publication number: 20210066261
    Abstract: A light-emitting device according to an embodiment is provided with: a light-emitting panel including a first board that is light transmissive and flexible, a plurality of conductor patterns formed on a surface of the first board, a plurality of light-emitting elements connected to one of the conductor patterns, and a second board that is light transmissive and flexible and that holds the light-emitting elements relative to the first board; and a flexible wiring board including a circuit pattern that is electrically connected via an anisotropic conductive layer to an exposed part of the conductor patterns formed on the first board, the exposed part being exposed by the end of the second board.
    Type: Application
    Filed: August 10, 2020
    Publication date: March 4, 2021
    Applicant: TOSHIBA HOKUTO ELECTRONICS CORPORATION
    Inventors: Kairi MAKITA, Fumio UENO
  • Publication number: 20200279983
    Abstract: A light emitting device, according to the present embodiment, has a first insulator, which is transparent to light, a first conductor layer, which is provided on a surface of the first insulator, a second insulator, which is transparent to light and arranged to oppose the first conductor layer, a light emitting element, which is arranged between the first insulator and the second insulator, and connected to the first conductor layer, and a third insulator, which is transparent to light and arranged between the first insulator and the second insulator, and the tensile storage elastic modulus of the third insulator is 1.0×109 Pa or greater, up to 1.0×1010 Pa, at 0° C., and 1.0×106 Pa or greater, up to 6.0×108 Pa, at 130° C.
    Type: Application
    Filed: February 27, 2020
    Publication date: September 3, 2020
    Applicant: Toshiba Hokuto Electronics Corporation
    Inventors: Naoki Takojima, Fumio Ueno
  • Publication number: 20200194645
    Abstract: A light emitting device, according to the present embodiment, has a light emitting panel, a flexible wiring substrate, a mold resin and a protective tape. The light emitting panel has a first substrate, which is transparent to light, a plurality of conductor patterns, which are formed on a surface of the first substrate, a plurality of light emitting elements, which are connected to any of the conductor patterns, and a resin layer, which holds the light emitting elements on the first substrate. The flexible wiring substrate has a circuit pattern that is electrically connected with an exposed part of the conductor patterns. The mold resin covers the exposed part of the conductor patterns and an exposed part of the circuit pattern. The protective tape covers the mold resin, and is wound around a joint part of the light emitting panel and the flexible wiring substrate.
    Type: Application
    Filed: December 13, 2019
    Publication date: June 18, 2020
    Applicant: TOSHIBA HOKUTO ELECTRONICS CORPORATION
    Inventors: Naoki TAKOJIMA, Kairi Makita, Fumio Ueno
  • Patent number: 9827609
    Abstract: A cast mold fabricating device supplies thickener-coated sand and steam into a mold forming die at an optimum timing to shorten a mold fabrication time. The device includes the die 2 with an injection inlet 1, a sand supply head 4 for supplying and filling the thickener-coated sand 3 into the die, a steam supply head 5 for supplying steam into the die 2 to solidify and/or cure a thickener of the sand by application of heat of the steam. The device further includes a vertical drive 6 for lowering the sand supply head 4 to a position where the injection inlet 1 is connected to a sand nozzle 8 of the sand supply head 4, and a horizontal drive 7 for advancing the steam supply head 5 to a position where the injection port 1 is connected to a steam nozzle 9 of the steam supply head 5.
    Type: Grant
    Filed: July 10, 2013
    Date of Patent: November 28, 2017
    Assignee: LIGNYTE CO., LTD.
    Inventors: Isamu Ide, Fumio Ueno
  • Publication number: 20160175925
    Abstract: A cast mold fabricating device supplies thickener-coated sand and steam into a mold forming die at an optimum timing to shorten a mold fabrication time. The device includes the die 2 with an injection inlet 1, a sand supply head 4 for supplying and filling the thickener-coated sand 3 into the die, a steam supply head 5 for supplying steam into the die 2 to solidify and/or cure a thickener of the sand by application of heat of the steam. The device further includes a vertical drive 6 for lowering the sand supply head 4 to a position where the injection inlet 1 is connected to a sand nozzle 8 of the sand supply head 4, and a horizontal drive 7 for advancing the steam supply head 5 to a position where the injection port 1 is connected to a steam nozzle 9 of the steam supply head 5.
    Type: Application
    Filed: July 10, 2013
    Publication date: June 23, 2016
    Inventors: Isamu Ide, Fumio Ueno
  • Patent number: 6110596
    Abstract: Disclosed are a circuit substrate which comprises a silicon nitride ceramic plate 1 having a thermal conductivity at room temperature of 80 W/mK or more and a metal plate 2 joined to the silicon nitride ceramic plate 1 through a glass layer 3, and a semiconductor device in which the circuit substrate is mounted.
    Type: Grant
    Filed: September 26, 1996
    Date of Patent: August 29, 2000
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Mitsuo Kasori, Akihiro Horiguchi, Hiroyasu Sumino, Fumio Ueno
  • Patent number: 6107638
    Abstract: Disclosed is a silicon nitride circuit substrate, a manufacturing procee thereof, and a semiconductor device therewith. The circuit substrate comprises: a silicon nitride substrate; a metal circuit plate; and a intermediate layer being interposed between the silicon nitride board and the metal circuit plate for joining the silicon nitride substrate and the metal circuit plate, and having a compound containing an aluminum oxide component. The concentration of the aluminum oxide component in the intermediate layer is higher in the side of the metal circuit plate than in the side of the silicon nitride board.
    Type: Grant
    Filed: March 16, 1998
    Date of Patent: August 22, 2000
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Hiroyasu Sumino, Akihiro Horiguchi, Mitsuo Kasori, Fumio Ueno
  • Patent number: 6086990
    Abstract: Disclosed are a high thermal conductivity silicon nitride circuit substrate which comprises a silicon nitride ceramic plate having a thermal conductivity at 25.degree. C. of 60 W/m.multidot.K or more and a metal circuit plate joined to the silicon nitride ceramic plate through an intermediate layer containing oxygen and at least one element selected from the group consisting of titanium, zirconium, hafnium, niobium and aluminum, and a semiconductor device using the same.
    Type: Grant
    Filed: September 26, 1996
    Date of Patent: July 11, 2000
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Hiroyasu Sumino, Akihiro Horiguchi, Mitsuo Kasori, Fumio Ueno
  • Patent number: 6013356
    Abstract: A circuit board having at least one insulator layer and at least one conductor layer which includes at least one of the whole insulator layers in a sintered body containing .beta.-Si.sub.3 N.sub.4 as a main component and at least one element selected from the group consisting of a rare earth element and an alkaline earth element, and at least one of the whole conductor layers contains at least one element selected from the group of IVb, Vb and VIb group of the periodic table, and at least one element selected from the group of a rare earth element and an alkaline earth element, and a Si element.
    Type: Grant
    Filed: September 26, 1996
    Date of Patent: January 11, 2000
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Akihiro Horiguchi, Hiroyasu Sumino, Mitsuo Kasori, Fumio Ueno
  • Patent number: 5994843
    Abstract: A light source power supply circuit includes a DC power source and an energy accumulating capacitor connected in parallel through a charging switching element to the DC power source. A polarity inverting circuit is connected across the energy accumulating capacitor for applying the capacitor voltage across a light source with the polarity alternately inverted. A starting high voltage generating circuit applies a high voltage to the light source a high voltage for starting the light source. A control circuit controls a polarity inverting circuit so that the inverting frequency is above a critical fusion frequency for the light source.
    Type: Grant
    Filed: September 27, 1996
    Date of Patent: November 30, 1999
    Assignee: Matsushita Electric Works, Ltd.
    Inventors: Shozo Kataoka, Fumio Ueno, Ikko Harada, Noriaki Hara, Ichirou Oota
  • Patent number: 5641718
    Abstract: Disclosed is a sintered aluminum nitride composition and a circuit substrate for use in semiconductor device. The sintered aluminum nitride composition comprises: aluminum nitride; a first component given by a compound containing an element which is selected from the group consisting of alkaline earth elements and group IIIa elements of the periodic table; a second component made of either a simple silicon or a silicon-containig compound; and a third component made of either a simple manganese or a manganese-containing compound. The circuit substrate has an insulating layer which is compoesd of the above-described sintered aluminum nitride composition, and an electrically conductive layer containing an electrically conductive material and the same components as those of the insulating layer.
    Type: Grant
    Filed: August 30, 1995
    Date of Patent: June 24, 1997
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Akihiro Horiguchi, Katsuyoshi Oh-Ishi, Mitsuo Kasori, Hiroyasu Sumino, Fumio Ueno, Jun Monma, Kazuo Kimura
  • Patent number: 5629666
    Abstract: Disclosed is a power resistor which has a large heat capacity per unit volume and an appropriate and stable electrical resistance, and in which the resistance changes little with time due to surge absorption. This power resistor includes a sintered body containing aluminum oxide and carbon, and a pair of electrodes formed on the two opposing surfaces of the sintered body. This sintered body consists of first regions containing a small amount of carbon or not containing carbon and second regions containing a larger amount of carbon than in the first regions and so arranged as to be connected to the electrodes.
    Type: Grant
    Filed: May 22, 1995
    Date of Patent: May 13, 1997
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Motomasa Imai, Naoki Shutoh, Fumio Ueno
  • Patent number: 5616956
    Abstract: Disclosed is a circuit substrate and a semiconductor device to which the circuit substrate is applied. The circuit substrate has an insulating layer and an electrically conductive layer. The insulating layer is composed of a sintered aluminum nitride composition containing: aluminum nitride; a first component given by a compound containing an element which is selected from the group consisting of group IIa elements and group IIIa elements of the periodic table; a second component given by either a simple boron or a boron compound; and a third component give by either a simple manganese or a manganese compound. The electrically conductive layer contains: a conductive component given by a metal or an electrically conductive compound for exhibiting electric conductivity; aluminum nitride; the first component; the second component; and the third component.
    Type: Grant
    Filed: September 7, 1995
    Date of Patent: April 1, 1997
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Akihiro Horiguchi, Jun Monma, Kazuo Kimura, Katsuyoshi Oh-Ishi, Fumio Ueno, Mitsuo Kasori, Hiroyasu Sumino
  • Patent number: 5581087
    Abstract: A radiation detector includes a photodiode composed of an .alpha.-SiC substrate of a first conductivity type, a first .alpha.-SiC layer of the first conductivity type epitaxially formed on the .alpha.-SiC substrate, a second .alpha.-SiC layer of a second conductivity type having higher carriers concentration than the first .alpha.-SiC layer and epitaxially formed on the first .alpha.-SiC layer, a first electrode formed on the .alpha.-SiC substrate in ohmic contact, and a second electrode formed on the second .alpha.-SiC layer in ohmic contact; and a phosphor layer disposed on the photodiode to emit ultraviolet-rays by exposure of radiations.
    Type: Grant
    Filed: February 7, 1995
    Date of Patent: December 3, 1996
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Ashraf Uddin, Fumio Ueno
  • Patent number: 5509558
    Abstract: A metal oxide resistor for suppressing variations in resistivity in use in an atmosphere at a high temperature or humidity. Such a metal oxide resistor includes a sintered body in which carbon particles having an average grain size of 1 .mu.m or less exist in the grain boundaries of metal oxide particles in an amount of 0.05 to 3 wt %, and electrodes formed on at least two opposing surfaces of the sintered body.
    Type: Grant
    Filed: July 15, 1994
    Date of Patent: April 23, 1996
    Assignees: Kabushiki Kaisha Toshiba, Toshiba Tungaloy Co., Ltd.
    Inventors: Motomasa Imai, Naoki Shutoh, Katsuyoshi Oh-Ishi, Fumio Ueno, Hideo Ohkuma, Yuji Katsumura, Masaki Kobayashi, Toshiyuki Takahashi
  • Patent number: 5500395
    Abstract: Disclosed is an aluminum nitride sintered body which has a high thermal conductivity and a high strength and which can be manufactured through low-temperature, short-time sintering. This aluminum nitride sintered body has an average grain size of aluminum nitride grains of 2 .mu.m or less, a thermal conductivity of 80 W/m.K or more, and a relative density of 98% or more.
    Type: Grant
    Filed: October 11, 1994
    Date of Patent: March 19, 1996
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Fumio Ueno, Mitsuo Kasori, Akihiro Horiguchi, Katsuyoshi Oh-Ishi
  • Patent number: 5409869
    Abstract: Disclosed is an aluminum nitride sintered body which has a high thermal conductivity and a high strength and which can be manufactured through low-temperature, short-time sintering. This aluminum nitride sintered body has an average grain size of aluminum nitride grains of 2 .mu.m or less, a thermal conductivity of 80 W/m.K or more, and a relative density of 98% or more.
    Type: Grant
    Filed: November 18, 1993
    Date of Patent: April 25, 1995
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Fumio Ueno, Mitsuo Kasori, Akihiro Horiguchi, Katsuyoshi Oh-Ishi
  • Patent number: 5373129
    Abstract: A compact power circuit breaker having a large breaking capacity and stable breaking performance by using a compact closing resistor unit having high performance. The power circuit breaker includes a main switch arranged in a current path, an auxiliary switch connected to the current path parallel with respect to the main switch and turned on prior to an ON state of the main switch, and a closing resistor unit connected in series with the auxiliary switch and incorporated with a resistor having a sintered body consisting of a Zn--Ti--Co--O--based oxide and having metal components consisting of titanium calculated as titanium oxide (TiO.sub.2) in an amount of 0.5 to 25 mol %, cobalt calculated as cobalt oxide (CoO) in an amount of 0.5 to 30 mol %, and Zn as substantially the balance.
    Type: Grant
    Filed: March 9, 1993
    Date of Patent: December 13, 1994
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Naoki Shutoh, Motomasa Imai, Fumio Ueno