Abstract: A plasma etching method includes a first process of applying, while applying a first high frequency power to a lower electrode, a second high frequency power to the lower electrode while switching the second high frequency power ON and OFF cyclically; and a second process of applying, while applying the first high frequency power to the lower electrode, the second high frequency power to the lower electrode while maintaining the second high frequency power ON continuously. The first process and the second process are alternately performed. If the deposits are formed on a bottom portion of an inner surface of the hole formed by the etching, the inner surface of the hole is protected by the deposits from the ions introduced into the hole. Therefore, the etching of the inner surface of the hole can be suppressed, and, thus, the twisting of the hole can also be suppressed.

Abstract: An etching processing method for etching a substrate formed with a target film and a mask film is performed in a substrate processing apparatus including a first and a second power supply for respectively supplying a higher and a lower high frequency power to a processing space and a mounting table, and a DC power supply for supplying a DC power to an electrode. The method includes a modification step for modifying a shape of a pattern formed on the mask film; and an etching step for etching the target film by using the mask film. The mask film is etched by the plasma in the modification step. Further, in the etching step, the DC power is applied to the electrode and the lower high frequency power is applied to the mounting table in a pulse wave form in which a higher and a lower power level are repeated.

Abstract: A plasma etching method includes a first process of applying, while applying a first high frequency power to a lower electrode, a second high frequency power to the lower electrode while switching the second high frequency power ON and OFF cyclically; and a second process of applying, while applying the first high frequency power to the lower electrode, the second high frequency power to the lower electrode while maintaining the second high frequency power ON continuously. The first process and the second process are alternately performed. If the deposits are formed on a bottom portion of an inner surface of the hole formed by the etching, the inner surface of the hole is protected by the deposits from the ions introduced into the hole. Therefore, the etching of the inner surface of the hole can be suppressed, and, thus, the twisting of the hole can also be suppressed.

Abstract: An etching processing method for etching a substrate formed with a target film and a mask film is performed in a substrate processing apparatus including a first and a second power supply for respectively supplying a higher and a lower high frequency power to a processing space and a mounting table, and a DC power supply for supplying a DC power to an electrode. The method includes a modification step for modifying a shape of a pattern formed on the mask film; and an etching step for etching the target film by using the mask film. The mask film is etched by the plasma in the modification step. Further, in the etching step, the DC power is applied to the electrode and the lower high frequency power is applied to the mounting table in a pulse wave form in which a higher and a lower power level are repeated.

Abstract: A job management apparatus includes a storage device configured to store a maximum power value when one or more calculation nodes has executed a first job, and a controller configured to detect the first job, at least one of which an identification information is matched with the identification information of a second job to be scheduled, of which the number of the calculation nodes to use is matched with the number of the calculation nodes of the second job, and of which a difference of the number of the calculation nodes with the second job is within a prescribed range, predict, as a second maximum power value of the second job, a first maximum power value of the detected first job, and schedule the second job such that the second maximum power value of the second job does not exceed a power consumption limit value set according to a time.

Abstract: An etching processing method for etching a substrate formed with a target film and a mask film is performed in a substrate processing apparatus including a first and a second power supply for respectively supplying a higher and a lower high frequency power to a processing space and a mounting table, and a DC power supply for supplying a DC power to an electrode. The method includes a modification step for modifying a shape of a pattern formed on the mask film; and an etching step for etching the target film by using the mask film. The mask film is etched by the plasma in the modification step. Further, in the etching step, the DC power is applied to the electrode and the lower high frequency power is applied to the mounting table in a pulse wave form in which a higher and a lower power level are repeated.

Abstract: A plasma etching method using a plasma etching apparatus including a lower electrode and an upper electrode is provided. The plasma etching method includes a first etching step of performing plasma etching using a first process gas and a second etching step of performing the plasma etching using a second process gas. The adhesion of a radical of the second process gas to an object of processing is less than the adhesion of a radical of the first process gas to the object of processing. While alternately repeating a first condition of turning on high-frequency electric power for plasma generation and a second condition of turning off the high-frequency electric power, the second etching step applies a negative direct-current voltage to the upper electrode so that the absolute value of the applied voltage is greater in a period of the second condition than in a period of the first condition.

Abstract: A job management apparatus includes a storage device configured to store a maximum power value when one or more calculation nodes has executed a first job, and a controller configured to detect the first job, at least one of which an identification information is matched with the identification information of a second job to be scheduled, of which the number of the calculation nodes to use is matched with the number of the calculation nodes of the second job, and of which a difference of the number of the calculation nodes with the second job is within a prescribed range, predict, as a second maximum power value of the second job, a first maximum power value of the detected first job, and schedule the second job such that the second maximum power value of the second job does not exceed a power consumption limit value set according to a time.

Abstract: A plasma etching method using a plasma etching apparatus including a lower electrode and an upper electrode is provided. The plasma etching method includes a first etching step of performing plasma etching using a first process gas and a second etching step of performing the plasma etching using a second process gas. The adhesion of a radical of the second process gas to an object of processing is less than the adhesion of a radical of the first process gas to the object of processing. While alternately repeating a first condition of turning on high-frequency electric power for plasma generation and a second condition of turning off the high-frequency electric power, the second etching step applies a negative direct-current voltage to the upper electrode so that the absolute value of the applied voltage is greater in a period of the second condition than in a period of the first condition.

Abstract: A glass cutting apparatus (101) includes a pair of cutters (13a, 13b) installed oppositely to each other in such a way as to sandwich, therebetween, a glass plate with surfaces of the glass plate thereof being along a vertical direction; a first pressing unit (14a) which presses one of the cutters to one of the surfaces of the glass plate in a horizontal direction with a pressing force P; a second pressing unit (14b) which is placed oppositely to the first pressing unit and presses the other one of the cutters to the other surface of the glass plate in the horizontal direction with the pressing force P; and a moving unit (20) which moves the pair of cutters pressing the glass plate with the pressing force P.

Abstract: There is provided a plasma etching method capable of achieving a sufficient organic film modifying effect by high-velocity electrons. In forming a hole in an etching target film by plasma etching, a first condition of generating plasma within a processing chamber by way of turning on a plasma-generating high frequency power application unit and a second condition of not generating the plasma within the processing chamber by way of turning off the plasma-generating high frequency power application unit are repeated alternately. Further, a negative DC voltage is applied from a first DC power supply such that an absolute value of the applied negative DC voltage during a period of the second condition is greater than an absolute value of the applied negative DC voltage during a period of the first condition.

Abstract: An etching processing method for etching a substrate formed with a target film and a mask film is performed in a substrate processing apparatus including a first and a second power supply for respectively supplying a higher and a lower high frequency power to a processing space and a mounting table, and a DC power supply for supplying a DC power to an electrode. The method includes a modification step for modifying a shape of a pattern formed on the mask film; and an etching step for etching the target film by using the mask film. The mask film is etched by the plasma in the modification step. Further, in the etching step, the DC power is applied to the electrode and the lower high frequency power is applied to the mounting table in a pulse wave form in which a higher and a lower power level are repeated.

Abstract: A glass cutting apparatus (101) includes a pair of cutters (13a, 13b) installed oppositely to each other in such a way as to sandwich, therebetween, a glass plate with surfaces of the glass plate thereof being along a vertical direction; a first pressing unit (14a) which presses one of the cutters to one of the surfaces of the glass plate in a horizontal direction with a pressing force P; a second pressing unit (14b) which is placed oppositely to the first pressing unit and presses the other one of the cutters to the other surface of the glass plate in the horizontal direction with the pressing force P; and a moving unit (20) which moves the pair of cutters pressing the glass plate with the pressing force P.

Abstract: There is provided a plasma etching method capable of achieving a sufficient organic film modifying effect by high-velocity electrons. In forming a hole in an etching target film by plasma etching, a first condition of generating plasma within a processing chamber by way of turning on a plasma-generating high frequency power application unit and a second condition of not generating the plasma within the processing chamber by way of turning off the plasma-generating high frequency power application unit are repeated alternately. Further, a negative DC voltage is applied from a first DC power supply such that an absolute value of the applied negative DC voltage during a period of the second condition is greater than an absolute value of the applied negative DC voltage during a period of the first condition.

Abstract: A control unit of a hierarchical control apparatus holds information in which one of duplexed library apparatuses is set as a master and the other is set as a slave for each medium in each of the duplexed library apparatuses, and statistical information about each of the library apparatuses. The control unit includes an automatic redundant copy unit detecting that a statistical information of a medium reaches a predetermined amount, replacing the medium with a free medium, and copying data to the free medium, a master/slave setting unit setting the medium to which the data is copied and the other medium as a master or a slave such that a load is even between the duplexed library apparatuses according to the statistical information, and a unit copying and reading the requested data to the disk array apparatus by prioritizing one of the duplexed library apparatuses including the medium set as a master when there is no requested data in the disk array apparatus.

Abstract: A plasma etching method for performing an etching process for forming on an insulating film formed on a substrate a hole shape having a ratio of depth to opening width of more than 20. The hole shape is formed on the insulating film by converting processing gas containing at least C4F6 gas and C6F6 gas into a plasma. A flow rate ratio of the C4F6 gas to the C6F6 gas (C4F6 gas flow rate/C6F6 gas flow rate) ranges from 2 to 11.

Abstract: A hierarchical storage management system and method that manages and virtualizes at least two kinds of storages with different access speeds as a primary storage and a secondary storage. The system includes a control unit configured to copy a file stored in the primary storage into the primary storage based on a determination that the file is to be migrated to be stored in the secondary storage, and a hierarchical management unit configured to transfer and store the file copied by the control unit into the primary storage to the secondary storage.

Abstract: An information processing apparatus transmits, by polling, a status verifying message to a disk array apparatus to verify a status of the disk array apparatus. The disk array apparatus attaches, upon receiving the status verifying message, a request for a command of a process to be executed to a response message to the status verifying message, and transmits the response message to the information processing apparatus. The information processing apparatus creates a command based on the request attached to the response message, and transmits the command created to the disk array apparatus.

Abstract: A control unit of a hierarchical control apparatus holds information in which one of duplexed library apparatuses is set as a master and the other is set as a slave for each medium in each of the duplexed library apparatuses, and statistical information about each of the library apparatuses. The control unit includes an automatic redundant copy unit detecting that a statistical information of a medium reaches a predetermined amount, replacing the medium with a free medium, and copying data to the free medium, a master/slave setting unit setting the medium to which the data is copied and the other medium as a master or a slave such that a load is even between the duplexed library apparatuses according to the statistical information, and a unit copying and reading the requested data to the disk array apparatus by prioritizing one of the duplexed library apparatuses including the medium set as a master when there is no requested data in the disk array apparatus.

Abstract: The present invention relates a method and system for garbage collection of a magnetic tape, and it is an object of the present invention to provide a method and system for garbage collection of a magnetic tape, which are capable of efficiently executing a garbage collection. A tape library device connected with a magnetic disk device. The tape library device includes at least two magnetic tape media being capable of storing data and first controller for controlling transfer information and storing information. The magnetic disc device includes a magnetic disc being capable of storing data and second controller for controlling transfer information and storing information.