Patents by Inventor Fumitaka Arai
Fumitaka Arai has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20180083022Abstract: According to one embodiment, a semiconductor memory device includes a substrate, semiconductor pillars, first electrode films, a second electrode film, a first insulating film, a second insulating film, and a contact. The semiconductor pillars are provided on the substrate, extend in a first direction crossing an upper surface of the substrate, and are arranged along second and third directions being parallel to the upper surface and crossing each other. The first electrode films extend in the third direction. The second electrode film is provided between the semiconductor pillars and the first electrode films. The first insulating film is provided between the semiconductor pillars and the second electrode film. The second insulating film is provided between the second electrode film and the first electrode films. The contact is provided at a position on the third direction of the semiconductor pillars and is connected to the first electrode films.Type: ApplicationFiled: November 27, 2017Publication date: March 22, 2018Applicant: Toshiba Memory CorporationInventors: Tatsuya KATO, Wataru SAKAMOTO, Fumitaka ARAI
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Publication number: 20180006050Abstract: A semiconductor memory device according to an embodiment, includes a semiconductor pillar extending in a first direction, a first electrode extending in a second direction crossing the first direction, a second electrode provided between the semiconductor pillar and the first electrode, a first insulating film provided between the semiconductor pillar and the second electrode, and a second insulating film provided between the first electrode and the second electrode. The second electrode includes a thin sheet portion disposed on the first electrode side, and a thick sheet portion disposed on the semiconductor pillar side. A length in the first direction of the thick sheet portion is longer than a length in the first direction of the thin sheet portion.Type: ApplicationFiled: September 14, 2017Publication date: January 4, 2018Applicant: Toshiba Memory CorporationInventors: Yuta Watanabe, Fumitaka Arai, Katsuyuki Sekine, Toshiyuki Iwamoto, Wataru Sakamoto, Tatsuya Kato
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Publication number: 20170373082Abstract: A semiconductor memory device according to an embodiment, includes a semiconductor pillar extending in a first direction, a first electrode extending in a second direction crossing the first direction, a second electrode provided between the semiconductor pillar and the first electrode, a first insulating film provided between the semiconductor pillar and the second electrode, a second insulating film provided between the first electrode and the second electrode and on two first-direction sides of the first electrode, and a conductive film provided between the second electrode and the second insulating film, the conductive film not contacting the first insulating film.Type: ApplicationFiled: August 22, 2017Publication date: December 28, 2017Applicant: Toshiba Memory CorporationInventors: Katsuyuki SEKINE, Tatsuya KATO, Fumitaka ARAI, Toshiyuki IWAMOTO, Yuta WATANABE, Wataru SAKAMOTO, Hiroshi ITOKAWA, Akio KANEKO
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Patent number: 9847342Abstract: A semiconductor memory device includes a first structural body, a second structural body and interconnections. The first and the second structural bodies are separated in a first direction and extend in a second direction. The interconnections are provided between the first structural body and the second structural body, extend in the second direction, and are separated from each other along a third direction. The first and the second structural bodies each includes an insulating member, a column-shaped body and an insulating film. The insulating member and the column-shaped body are disposed in an alternating manner along the second direction and extend in the third direction. The insulating members of the first and second structural bodies make contact with the interconnections.Type: GrantFiled: September 16, 2016Date of Patent: December 19, 2017Assignee: TOSHIBA MEMORY CORPORATIONInventors: Satoshi Nagashima, Katsumi Yamamoto, Kohei Sakaike, Tatsuya Kato, Keisuke Kikutani, Fumitaka Arai, Atsushi Murakoshi, Shunichi Takeuchi, Katsuyuki Sekine
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Publication number: 20170352735Abstract: A semiconductor memory device according to an embodiment, includes a pair of first electrodes, a semiconductor pillar, an inter-pillar insulating member, a first insulating film, a second electrode, and a second insulating film. The pair of first electrodes are separated from each other, and extend in a first direction. The semiconductor pillar and the inter-pillar insulating member are arranged alternately along the first direction between the pair of first electrodes. The semiconductor pillar and the inter-pillar insulating member extend in a second direction crossing the first direction. The first insulating film is provided at a periphery of the semiconductor pillar. The second electrode is provided between the first insulating film and each electrode of the pair of first electrodes. The second electrode is not provided between the semiconductor pillar and the inter-pillar insulating member. The second insulating film is provided between the second electrode and the first electrode.Type: ApplicationFiled: August 23, 2017Publication date: December 7, 2017Applicant: Toshiba Memory CorporationInventors: Tatsuya Kato, Fumitaka Arai, Katsuyuki Sekine, Toshiyuke Iwamoto, Yuta Watanabe, Wataru Sakamoto
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Publication number: 20170352672Abstract: A semiconductor memory device according to an embodiment includes first and second semiconductor pillars extending in a first direction and being arranged along a second direction, first and second interconnects extending in a third direction and being provided between the first semiconductor pillar and the second semiconductor pillar, a first electrode provided between the first semiconductor pillar and the first interconnect, a second electrode provided between the second semiconductor pillar and the second interconnect, third and fourth interconnects extending in the second direction, a first contact contacting the first semiconductor pillar and being connected to the third interconnect, and a second contact contacting the second semiconductor pillar and being connected to the fourth interconnect. The third and fourth interconnects each pass through both a region directly above the first semiconductor pillar and a region directly above the second semiconductor pillar.Type: ApplicationFiled: August 25, 2017Publication date: December 7, 2017Applicant: Toshiba Memory CorporationInventors: Wataru SAKAMOTO, Tatsuya KATO, Yuta WATANABE, Katsuyuki SEKINE, Toshiyuki IWAMOTO, Fumitaka ARAI
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Publication number: 20170352671Abstract: A semiconductor memory device according to an embodiment, includes a semiconductor pillar extending in a first direction, a first electrode extending in a second direction crossing the first direction, a second electrode provided between the semiconductor pillar and the first electrode, a first insulating film provided between the first electrode and the second electrode and on two first-direction sides of the first electrode, a second insulating film provided between the second electrode and the first insulating film and on two first-direction sides of the second electrode, a third insulating film provided between the second electrode and the semiconductor pillar, and a conductive film provided inside a region interposed between the first insulating film and the second insulating film.Type: ApplicationFiled: August 23, 2017Publication date: December 7, 2017Applicant: Toshiba Memory CorporationInventors: Tatsuya Kato, Fumitaka Arai, Katsuyuki Sekine, Toshiyuki Iwamoto, Yuta Watanabe, Wataru Sakamoto, Hiroshi Itokawa
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Patent number: 9837434Abstract: A semiconductor memory device according to one embodiment, includes a first electrode film, a plurality of semiconductor members, and a charge storage member. The first electrode film includes three or more first portions and a second portion connecting the first portions to each other. The first portions extend in a first direction and are arranged along a second direction that intersects with the first direction. The plurality of semiconductor members are arranged along the first direction between the first portions and extending in a third direction. The third direction intersects with a plane containing the first direction and the second direction. The charge storage member is disposed between each of the semiconductor members and each of the first portions. The second portion is disposed between the semiconductor members.Type: GrantFiled: September 16, 2016Date of Patent: December 5, 2017Assignee: TOSHIBA MEMORY CORPORATIONInventors: Koichi Sakata, Yuta Watanabe, Keisuke Kikutani, Satoshi Nagashima, Fumitaka Arai, Toshiyuki Iwamoto
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Publication number: 20170271348Abstract: A semiconductor memory device includes a semiconductor substrate, a first insulating film provided on the semiconductor substrate, a first conductive film provided on a first region of the first insulating film, a second conductive film provided on a second region of the first insulating film, a first stacked body provided on the first conductive film, a second stacked body provided on the second conductive film, a first semiconductor pillar, and two conductive pillars. In the first stacked body, a second insulating film and an electrode film are stacked alternately. In the second stacked body, a third insulating film and a first film are stacked alternately. The two conductive pillars extend in the first direction through the second stacked body, are separated from the second conductive film, sandwich the second conductive film, and are connected at a bottom ends of the second conductive pillars to the semiconductor substrate.Type: ApplicationFiled: September 16, 2016Publication date: September 21, 2017Applicant: Kabushiki Kaisha ToshibaInventors: Fumitaka ARAI, Tatsuya KATO, Satoshi NAGASHIMA, Katsuyuki SEKINE, Yuta WATANABE, Keisuke KIKUTANI, Atsushi MURAKOSHI
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Publication number: 20170263637Abstract: A semiconductor memory device according to one embodiment, includes a first electrode film, a plurality of semiconductor members, and a charge storage member. The first electrode film includes three or more first portions and a second portion connecting the first portions to each other. The first portions extend in a first direction and are arranged along a second direction that intersects with the first direction. The plurality of semiconductor members are arranged along the first direction between the first portions and extending in a third direction. The third direction intersects with a plane containing the first direction and the second direction. The charge storage member is disposed between each of the semiconductor members and each of the first portions. The second portion is disposed between the semiconductor members.Type: ApplicationFiled: September 16, 2016Publication date: September 14, 2017Applicant: Kabushiki Kaisha ToshibaInventors: Koichi SAKATA, Yuta WATANABE, Keisuke KlKUTANI, Satoshi NAGASHIMA, Fumitaka ARAI, Toshiyuki IWAMOTO
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Publication number: 20170263636Abstract: According to one embodiment, a semiconductor device includes a first interconnection, a first semiconductor region, a stacked body, a columnar portion, first insulators, and arrays. The first interconnection is provided on a substrate via a first insulating film interposed. The first semiconductor region is provided on the first interconnection via a second insulating film. The stacked body is provided on the first semiconductor region. The columnar portion is provided in the stacked body. The first insulators are provided in the stacked body. The first insulators extend in the stacking direction and a first direction crossing the stacking direction. The arrays are provided in the first semiconductor region. The arrays each include second semiconductor regions. The second semiconductor regions are separated from each other. The second semiconductor regions are provided under the first insulators. The second semiconductor regions are electrically connected to the first interconnection.Type: ApplicationFiled: September 15, 2016Publication date: September 14, 2017Applicant: Kabushiki Kaisha ToshibaInventors: Takashi ISHIDA, Jun FUJIKI, Shinya ARAI, Fumitaka ARAI, Hideaki AOCHI, Kotaro FUJII
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Publication number: 20170263613Abstract: According to one embodiment, a semiconductor device includes a substrate and a semiconductor layer. The device further includes a first electrode layer that is provided on a side surface of the semiconductor layer with a first insulating film interposed therebetween. The device further includes a charge storage layer provided on a side surface of the first electrode layer with the second insulating film interposed therebetween.Type: ApplicationFiled: September 1, 2016Publication date: September 14, 2017Inventors: Atsushi MURAKOSHI, Yasuhito YOSHIMIZU, Tomofumi INOUE, Tatsuya KATO, Yuta WATANABE, Fumitaka ARAI
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Publication number: 20170263615Abstract: A semiconductor memory device according to an embodiment, includes a first semiconductor member, a second semiconductor member, an insulating member, a plurality of electrode films, a first electrode, and a second electrode. The first semiconductor member and the second semiconductor member are separated in a first direction and extending in a second direction. The second direction crosses the first direction. The insulating member is provided between the first semiconductor member and the second semiconductor member. The plurality of electrode films are arranged to be separated from each other along the second direction. Each of the electrode films surrounds the first semiconductor member, the second semiconductor member, and the insulating member when viewed from the second direction. The first electrode is provided between the first semiconductor member and the electrode film. The second electrode is provided between the second semiconductor member and the electrode film.Type: ApplicationFiled: March 3, 2017Publication date: September 14, 2017Applicant: Kabushiki Kaisha ToshibaInventors: Kohei SAKAIKE, Toshiyuki IWAMOTO, Tatsuya KATO, Keisuke KlKUTANI, Fumitaka ARAI, Satoshi NAGASHIMA, Koichi SAKATA, Yuta WATANABE
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Publication number: 20170263619Abstract: A semiconductor memory device includes a first structural body, a second structural body and interconnections. The first and the second structural bodies are separated in a first direction and extend in a second direction. The interconnections are provided between the first structural body and the second structural body, extend in the second direction, and are separated from each other along a third direction. The first and the second structural bodies each includes an insulating member, a column-shaped body and an insulating film. The insulating member and the column-shaped body are disposed in an alternating manner along the second direction and extend in the third direction. The insulating members of the first and second structural bodies make contact with the interconnections.Type: ApplicationFiled: September 16, 2016Publication date: September 14, 2017Applicant: Kabushiki Kaisha ToshibaInventors: Satoshi NAGASHIMA, Katsumi YAMAMOTO, Kohei SAKAIKE, Tatsuya KATO, Keisuke KlKUTANI, Fumitaka ARAI, Atsushi MURAKOSHI, Shunichi TAKEUCHI, Katsuyuki SEKINE
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Patent number: 9761606Abstract: According to one embodiment, a semiconductor device includes a first interconnection, a first semiconductor region, a stacked body, a columnar portion, first insulators, and arrays. The first interconnection is provided on a substrate via a first insulating film interposed. The first semiconductor region is provided on the first interconnection via a second insulating film. The stacked body is provided on the first semiconductor region. The columnar portion is provided in the stacked body. The first insulators are provided in the stacked body. The first insulators extend in the stacking direction and a first direction crossing the stacking direction. The arrays are provided in the first semiconductor region. The arrays each include second semiconductor regions. The second semiconductor regions are separated from each other. The second semiconductor regions are provided under the first insulators. The second semiconductor regions are electrically connected to the first interconnection.Type: GrantFiled: September 15, 2016Date of Patent: September 12, 2017Assignee: TOSHIBA MEMORY CORPORATIONInventors: Takashi Ishida, Jun Fujiki, Shinya Arai, Fumitaka Arai, Hideaki Aochi, Kotaro Fujii
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Publication number: 20170243945Abstract: In a semiconductor memory device, first insulating films are arranged along a first direction and a second direction and extend in a third direction. Interconnect is disposed between the first insulating films in the first direction and extends in the third direction. Electrodes are disposed between the first insulating films in the first direction on a second direction side of the interconnect, and is arranged along the third direction. Second insulating film is disposed between the interconnect and the electrodes. Semiconductor members are arranged along the third direction between the first insulating films in the second direction and extend in the first direction. The electrode is disposed between the interconnect and the semiconductor members. Third insulating film is disposed between the electrodes and the semiconductor member and is thicker than the second insulating film.Type: ApplicationFiled: September 13, 2016Publication date: August 24, 2017Applicant: KABUSHIKI KAISHA TOSHIBAInventors: KATSUYUKI SEKINE, TATSUYA KATO, FUMITAKA ARAI, TOSHIYUKI IWAMOTO, YUTA WATANABE, ATSUSHI MURAKOSHI
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Patent number: 9735167Abstract: A semiconductor memory device according to one embodiment, includes a plurality of first interconnects extending in a first direction and arrayed along a second direction crossing the first direction, a plurality of semiconductor pillars arrayed in a row along the first direction in each of spaces among the first interconnects and extending in a third direction crossing the first direction and the second direction, a first electrode disposed between one of the semiconductor pillars and one of the first interconnects, a first insulating film disposed between the first electrode and one of the first interconnects, a first insulating member disposed between the semiconductor pillars in the first direction and extending in the third direction and opposed the first interconnects not via the first insulating film.Type: GrantFiled: August 31, 2015Date of Patent: August 15, 2017Assignee: Kabushiki Kaisha ToshibaInventors: Tatsuya Kato, Fumitaka Arai, Satoshi Nagashima, Katsuyuki Sekine, Yuta Watanabe, Keisuke Kikutani, Atsushi Murakoshi
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Publication number: 20170069388Abstract: A nonvolatile memory device includes a conductive layer, a semiconductor layer extending in a first direction on the conductive layer, a first insulating layer provided between the conductive layer and the semiconductor layer, a word line extending in a second direction on the semiconductor layer, the second direction intersecting the first direction, a charge storage layer provided between the semiconductor layer and the word line, and a circuit electrically connected to the conductive layer. The circuit applies an electric potential to the conductive layer when programming data, the electric potential of the conductive layer having the same polarity as an electric potential of the word line.Type: ApplicationFiled: March 11, 2016Publication date: March 9, 2017Applicant: Kabushiki Kaisha ToshibaInventors: Fumitaka ARAI, Akio KANEKO
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Publication number: 20170012050Abstract: A semiconductor memory device according to one embodiment, includes a plurality of first interconnects extending in a first direction and arrayed along a second direction crossing the first direction, a plurality of semiconductor pillars arrayed in a row along the first direction in each of spaces among the first interconnects and extending in a third direction crossing the first direction and the second direction, a first electrode disposed between one of the semiconductor pillars and one of the first interconnects, a first insulating film disposed between the first electrode and one of the first interconnects, a first insulating member disposed between the semiconductor pillars in the first direction and extending in the third direction and opposed the first interconnects not via the first insulating film.Type: ApplicationFiled: August 31, 2015Publication date: January 12, 2017Applicant: Kabushiki Kaisha ToshibaInventors: Tatsuya KATO, Fumitaka ARAI, Satoshi NAGASHIMA, Katsuyuki SEKINE, Yuta WATANABE, Keisuke KIKUTANI, Atsushi MURAKOSHI
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Publication number: 20160351621Abstract: A semiconductor memory includes a plurality of stripe-like active areas formed by stacking, in a direction perpendicular to a substrate, a plurality of layers extending parallel to the substrate, a first gate electrode formed on first side surfaces of the active areas, the first side surfaces being perpendicular to the substrate, a second gate electrode formed on second side surfaces of the active areas, the second side surfaces being perpendicular to the substrate. The layers are patterned in self-alignment with each other, intersections of the active areas and the first gate electrode form a plurality of memory cells, and the plurality of memory cells in an intersecting plane share the first gate electrode.Type: ApplicationFiled: August 8, 2016Publication date: December 1, 2016Inventors: Masahiro KIYOTOSHI, Akihito YAMAMOTO, Yoshio OZAWA, Fumitaka ARAI, Riichiro SHIROTA