Abstract: A display apparatus includes: a display; a display driver that drives the display such that the display displays in accordance with display data; and a host controller that transfers update display data of one screen to the display driver. The display driver includes a light-emission controller that causes a self-luminous elements to emit light, and a memory that stores the update display data of the one screen. The display driver reads the update display data on the memory after an elapse of a predetermined period of time from a drive end time at which the display controller finishes driving in accordance with the update display data and drives the screen by using the read update display data. The display driver drives the self-luminous elements once or more at a timing when the update display data from the host controller to the display driver is not updated.

Abstract: An epitaxial-deposition composite substrate, of more than about 50 mm diameter, in which a nitride-compound semiconductor first substrate is bonded together with a second substrate of either identical or different material. The first substrate is ion-implanted, and on its nitrogen-face side is coated with a special film of thickness within a predetermined range. On a bonding side of the second substrate a special coating of thickness within the predetermined range is formed. The join created by the coated nitrogen-face side of the first substrate being bonded to the coated bonding side of the second substrate occupies at least 90% of the surface area where the two substrates meet.

Abstract: An oily solid cosmetic is capable of effectively diminishing morphological problems, such as vertical wrinkles, in particular on the lip, over a long period of time. The present invention provides an oily solid cosmetic which contains: (A) a plate-like composite powder presenting interference colors, (B) a spherical composite powder wherein the surface of a spherical powder having a refractive index of 1.40 to 1.60 is coated with a coating component having a refractive index of 2.00 to 2.90, and (C) 1 to 40% by mass of a semi-solid oil component. Preferably, the cosmetic of the present invention further contains (D) heavy isoparaffin. The cosmetic of the present invention is capable of diminishing vertical wrinkles, in particular on the lip, over a long period of time, and of maintaining a glossy lip.

Abstract: An epitaxial-deposition composite substrate, of more than about 50 mm diameter, in which a nitride-compound semiconductor first substrate is bonded together with a second substrate of either identical or different material. The first substrate is ion-implanted, and on its nitrogen-face side is coated with a special film of thickness within a predetermined range. On a bonding side of the second substrate a special coating of thickness within the predetermined range is formed. The join created by the coated nitrogen-face side of the first substrate being bonded to the coated bonding side of the second substrate occupies at least 90% of the surface area where the two substrates meet.

Abstract: A composite-substrate manufacturing method is provided with: a step of carrying out implantation of ions through a surface of a bulk substrate composed of the nitride compound semiconductor; a step of setting said surface of the bulk substrate against the second substrate, and bonding the bulk substrate and the second substrate together to obtain a bonded substrate; a step of elevating the temperature of the bonded substrate to a first temperature; a step of sustaining the first temperature for a fixed time; and a step of producing a composite substrate by severing the remaining portion of the bulk substrate from the bonded substrate; characterized in that a predetermined formula as for the first temperature, the thermal expansion coefficient of the first substrate, and the thermal expansion coefficient of the second substrate is satisfied.

Abstract: A fabrication method of a group III nitride crystal substance includes the steps of cleaning the interior of a reaction chamber by introducing HCl gas into the reaction chamber, and vapor deposition of a group III nitride crystal substance in the cleaned reaction chamber. A fabrication apparatus of a group III nitride crystal substance includes a configuration to introduce HCl gas into the reaction chamber, and a configuration to grow a group III nitride crystal substance by HVPE. Thus, a fabrication method of a group III nitride crystal substance including the method of effectively cleaning deposits adhering inside the reaction chamber during crystal growth, and a fabrication apparatus employed in the fabrication method are provided.

Abstract: A vehicle operating device includes: a voice operation unit (3) for recognizing an uttered voice and outputting a voice recognition result; a spatial operation unit (2) for recognizing a movement performed within a predetermined space and outputting a spatial recognition result; a main processing unit (4) for executing a processing corresponding to the voice recognition result and the spatial recognition result; and a display unit (5) for displaying an image generated in accordance with an instruction from the main processing unit, the image being superimposed on an actual scene that can be viewed through a windshield.

Abstract: An oily solid cosmetic is capable of effectively diminishing morphological problems, such as vertical wrinkles, in particular on the lip, over a long period of time. The present invention provides an oily solid cosmetic which contains: (A) a plate-like composite powder presenting interference colors, (B) a spherical composite powder wherein the surface of a spherical powder having a refractive index of 1.40 to 1.60 is coated with a coating component having a refractive index of 2.00 to 2.90, and (C) 1 to 40% by mass of a semi-solid oil component. Preferably, the cosmetic of the present invention further contains (D) heavy isoparaffin. The cosmetic of the present invention is capable of diminishing vertical wrinkles, in particular on the lip, over a long period of time, and of maintaining a glossy lip.

Abstract: A fabrication method of a group III nitride crystal substance includes the steps of cleaning the interior of a reaction chamber by introducing HCl gas into the reaction chamber, and vapor deposition of a group III nitride crystal substance in the cleaned reaction chamber. A fabrication apparatus of a group III nitride crystal substance includes a configuration to introduce HCl gas into the reaction chamber, and a configuration to grow a group III nitride crystal substance by HVPE. Thus, a fabrication method of a group III nitride crystal substance including the method of effectively cleaning deposits adhering inside the reaction chamber during crystal growth, and a fabrication apparatus employed in the fabrication method are provided.

Abstract: A speech recognizing apparatus includes a speech start instructing section 3 for instructing to start speech recognition; a speech input section 1 for receiving uttered speech and converting to a speech signal; a speech recognizing section 2 for recognizing the speech on the basis of the speech signal; an utterance start time detecting section 4 for detecting duration from the time when the speech start instructing section instructs to the time when the speech input section delivers the speech signal; an utterance timing deciding section 5 for deciding utterance timing indicating whether the utterance start is quick or slow by comparing the duration detected by the utterance start time detecting section with a prescribed threshold; an interaction control section 6 for determining a content, which is to be shown when exhibiting a recognition result of the speech recognizing section, in accordance with the utterance timing decided; a system response generating section 7 for generating a system response on the b

Abstract: A method for producing a conductive nitride semiconductor substrate circuit includes the steps of forming, on an underlying substrate, a mask including dot or stripe masking portions having a width or diameter of 10 to 100 ?m and arranged at a spacing of 250 to 10,000 ?m; growing a nitride semiconductor crystal on the underlying substrate by hydride vapor phase epitaxy (HVPE) at a growth temperature of 1,040° C. to 1,150° C. by supplying a group III source gas, a group V source gas, and a silicon-containing gas in a V/III ratio of 1 to 10; and removing the underlying substrate, thus forming a free-standing conductive nitride semiconductor crystal substrate having a resistivity r of 0.0015 ?cm?r?0.01 ?cm, a thickness of 100 ?m or more, and a radius of bow curvature U of 3.5 m?U?8 m.

Abstract: An on-vehicle guidance apparatus is characterized in including an output sound control means for acquiring a sound volume setting of onboard equipment, a sound volume determining means for determining whether or not the sound volume setting is smaller than a predetermined threshold, and a guidance output control means for issuing a command for carrying out voice guidance in response to a determination signal from the sound volume determining means at a time when the sound volume setting becomes smaller than the above-mentioned threshold.

Abstract: To provide a cosmetic for eyelashes, which is excellent in the effect of imparting a feeling of voluminousness to eyelashes and exerts high base transparency without damage to the color inherent in the cosmetic base. Means of attaining the object A cosmetic for eyelashes which comprises (a) a silicone resin powder of particles having such a spiky-surface-sugar-candy-ball-like shape that small protrusions are present over the whole surface of each particle, (b) a volatile oil (e.g., low-boiling-point isoparaffinic hydrocarbon oil, low-boiling-point silicone oil, etc.), and (c) an oily gelling agent. Preferably, the cosmetic contains 1-20% by weight of component (a), 10-80% by mass of component (b) and 1-25% by mass of component (c). The cosmetic may optionally contain (d) a film-forming agent.

Abstract: A method for producing a conductive nitride semiconductor substrate circuit includes the steps of forming, on an underlying substrate, a mask including dot or stripe masking portions having a width or diameter of 10 to 100 ?m and arranged at a spacing of 250 to 10,000 ?m; growing a nitride semiconductor crystal on the underlying substrate by hydride vapor phase epitaxy (HVPE) at a growth temperature of 1,040° C. to 1,150° C. by supplying a group III source gas, a group V source gas, and a silicon-containing gas in a V/III ratio of 1 to 10; and removing the underlying substrate, thus forming a free-standing conductive nitride semiconductor crystal substrate having a resistivity r of 0.0015 ?cm?r?0.01 ?cm, a thickness of 100 ?m or more, and a radius of bow curvature U of 3.5 m?U?8 m.

Abstract: A vehicle operating device includes: a voice operation unit 3 for recognizing an uttered voice and outputting a recognition result; a spatial operation unit 2 for recognizing a movement performed within a space and outputting a recognition result; a main processing unit 4 for executing a processing corresponding to the recognition result transmitted from the voice operation unit and the recognition result transmitted from the spatial operation unit; and a display unit 5 for displaying an image generated in accordance with an instruction from the main processing unit, the image being superimposed on an actual scene that can be viewed through a windshield.

Abstract: A voice recognizing apparatus includes a voice start instructing section 3 for instructing to start voice recognition; a voice input section 1 for receiving uttered voice and converting to a voice signal; a voice recognizing section 2 for recognizing the voice on the basis of the voice signal; an utterance start time detecting section 4 for detecting duration from the time when the voice start instructing section instructs to the time when the voice input section delivers the voice signal; an utterance timing deciding section 5 for deciding utterance timing indicating whether the utterance start is quick or slow by comparing the duration detected by the utterance start time detecting section with a prescribed threshold; an interaction control section 6 for determining a content, which is to be shown when exhibiting a recognition result of the voice recognizing section, in accordance with the utterance timing decided; a system response generating section 7 for generating a system response on the basis of the d

Abstract: On the basis of both screen transition data showing a correspondence between data showing whether a screen transition among operation screens is enabled or disabled and screen identifiers each identifying one of the operation screens, and associated data showing a correspondence between a manual item identifier and a screen identifier identifying an operation screen for enabling an operation based on an operation item specified by the manual item identifier to be performed, an information-to-be-presented deriving unit derives an operation screen corresponding to a manual item identifier acquired by a browsing detecting unit 3, and then displays this operation screen on an equipment display unit 10.

Abstract: The present invention provides a method for manufacturing a semiconductor substrate including a low-resistance nitride layer laminated on a substrate, a method for manufacturing a semiconductor device, a semiconductor substrate, and a semiconductor device. A method for manufacturing a semiconductor substrate of the present invention includes the following steps: A nitride substrate having a principal surface and a back surface opposite to the principal surface is prepared. Vapor-phase ions are implanted into the back surface of the nitride substrate. The back surface of the nitride substrate is bonded to a dissimilar substrate to form a bonded substrate. The nitride substrate is partially separated from the bonded substrate to form a laminated substrate including the dissimilar substrate and a nitride layer. The laminated substrate is heat-treated at a temperature over 700° C.

Abstract: There is disclosed a method for forming a gallium nitride layer of which resistivity is 1×106 ?·cm or more, including steps of: forming a gallium nitride layer containing iron on a substrate; and heating said gallium nitride layer formed on said substrate.

Abstract: A fabrication method of a group III nitride crystal substance includes the steps of cleaning the interior of a reaction chamber by introducing HCl gas into the reaction chamber, and vapor deposition of a group III nitride crystal substance in the cleaned reaction chamber. A fabrication apparatus of a group III nitride crystal substance includes a configuration to introduce HCl gas into the reaction chamber, and a configuration to grow a group III nitride crystal substance by HVPE. Thus, a fabrication method of a group III nitride crystal substance including the method of effectively cleaning deposits adhering inside the reaction chamber during crystal growth, and a fabrication apparatus employed in the fabrication method are provided.