Patents by Inventor Fumitaka Sato

Fumitaka Sato has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9252207
    Abstract: An epitaxial-deposition composite substrate, of more than about 50 mm diameter, in which a nitride-compound semiconductor first substrate is bonded together with a second substrate of either identical or different material. The first substrate is ion-implanted, and on its nitrogen-face side is coated with a special film of thickness within a predetermined range. On a bonding side of the second substrate a special coating of thickness within the predetermined range is formed. The join created by the coated nitrogen-face side of the first substrate being bonded to the coated bonding side of the second substrate occupies at least 90% of the surface area where the two substrates meet.
    Type: Grant
    Filed: December 18, 2013
    Date of Patent: February 2, 2016
    Assignee: SUMITOMO ELECTRIC INDUSTRIES, LTD.
    Inventors: Yoko Maeda, Fumitaka Sato, Akihiro Hachigo, Seiji Nakahata
  • Patent number: 9078817
    Abstract: An oily solid cosmetic is capable of effectively diminishing morphological problems, such as vertical wrinkles, in particular on the lip, over a long period of time. The present invention provides an oily solid cosmetic which contains: (A) a plate-like composite powder presenting interference colors, (B) a spherical composite powder wherein the surface of a spherical powder having a refractive index of 1.40 to 1.60 is coated with a coating component having a refractive index of 2.00 to 2.90, and (C) 1 to 40% by mass of a semi-solid oil component. Preferably, the cosmetic of the present invention further contains (D) heavy isoparaffin. The cosmetic of the present invention is capable of diminishing vertical wrinkles, in particular on the lip, over a long period of time, and of maintaining a glossy lip.
    Type: Grant
    Filed: October 28, 2009
    Date of Patent: July 14, 2015
    Assignee: SHISEIDO COMPANY, LTD.
    Inventors: Kiriko Chiba, Fumitaka Sato
  • Publication number: 20140103358
    Abstract: An epitaxial-deposition composite substrate, of more than about 50 mm diameter, in which a nitride-compound semiconductor first substrate is bonded together with a second substrate of either identical or different material. The first substrate is ion-implanted, and on its nitrogen-face side is coated with a special film of thickness within a predetermined range. On a bonding side of the second substrate a special coating of thickness within the predetermined range is formed. The join created by the coated nitrogen-face side of the first substrate being bonded to the coated bonding side of the second substrate occupies at least 90% of the surface area where the two substrates meet.
    Type: Application
    Filed: December 18, 2013
    Publication date: April 17, 2014
    Applicant: Sumitomo Electric Industries, Ltd.
    Inventors: Yoko Maeda, Fumitaka Sato, Akihiro Hachigo, Seiji Nakahata
  • Patent number: 8664085
    Abstract: A composite-substrate manufacturing method is provided with: a step of carrying out implantation of ions through a surface of a bulk substrate composed of the nitride compound semiconductor; a step of setting said surface of the bulk substrate against the second substrate, and bonding the bulk substrate and the second substrate together to obtain a bonded substrate; a step of elevating the temperature of the bonded substrate to a first temperature; a step of sustaining the first temperature for a fixed time; and a step of producing a composite substrate by severing the remaining portion of the bulk substrate from the bonded substrate; characterized in that a predetermined formula as for the first temperature, the thermal expansion coefficient of the first substrate, and the thermal expansion coefficient of the second substrate is satisfied.
    Type: Grant
    Filed: October 17, 2012
    Date of Patent: March 4, 2014
    Assignee: Sumitomo Electric Industries, Ltd.
    Inventors: Yoko Maeda, Fumitaka Sato, Akihiro Hachigo, Seiji Nakahata
  • Publication number: 20130244406
    Abstract: A fabrication method of a group III nitride crystal substance includes the steps of cleaning the interior of a reaction chamber by introducing HCl gas into the reaction chamber, and vapor deposition of a group III nitride crystal substance in the cleaned reaction chamber. A fabrication apparatus of a group III nitride crystal substance includes a configuration to introduce HCl gas into the reaction chamber, and a configuration to grow a group III nitride crystal substance by HVPE. Thus, a fabrication method of a group III nitride crystal substance including the method of effectively cleaning deposits adhering inside the reaction chamber during crystal growth, and a fabrication apparatus employed in the fabrication method are provided.
    Type: Application
    Filed: February 26, 2013
    Publication date: September 19, 2013
    Applicant: Sumitomo Electric Industries, Ltd.
    Inventors: Hitoshi KASAI, Takuji Okahisa, Shunsuke Fujita, Naoki Matsumoto, Hideyuki Ijiri, Fumitaka Sato, Kensaku Motoki, Seiji Nakahata, Koji Uematsu, Ryu Hirota
  • Patent number: 8532871
    Abstract: A vehicle operating device includes: a voice operation unit (3) for recognizing an uttered voice and outputting a voice recognition result; a spatial operation unit (2) for recognizing a movement performed within a predetermined space and outputting a spatial recognition result; a main processing unit (4) for executing a processing corresponding to the voice recognition result and the spatial recognition result; and a display unit (5) for displaying an image generated in accordance with an instruction from the main processing unit, the image being superimposed on an actual scene that can be viewed through a windshield.
    Type: Grant
    Filed: March 14, 2008
    Date of Patent: September 10, 2013
    Assignee: Mitsubishi Electric Company
    Inventors: Reiko Okada, Kiyoshi Matsutani, Atsushi Kohno, Fumitaka Sato, Yuta Kawana, Wataru Yamazaki
  • Publication number: 20130202665
    Abstract: An oily solid cosmetic is capable of effectively diminishing morphological problems, such as vertical wrinkles, in particular on the lip, over a long period of time. The present invention provides an oily solid cosmetic which contains: (A) a plate-like composite powder presenting interference colors, (B) a spherical composite powder wherein the surface of a spherical powder having a refractive index of 1.40 to 1.60 is coated with a coating component having a refractive index of 2.00 to 2.90, and (C) 1 to 40% by mass of a semi-solid oil component. Preferably, the cosmetic of the present invention further contains (D) heavy isoparaffin. The cosmetic of the present invention is capable of diminishing vertical wrinkles, in particular on the lip, over a long period of time, and of maintaining a glossy lip.
    Type: Application
    Filed: October 28, 2009
    Publication date: August 8, 2013
    Inventors: Kiriko Chiba, Fumitaka Sato
  • Patent number: 8404569
    Abstract: A fabrication method of a group III nitride crystal substance includes the steps of cleaning the interior of a reaction chamber by introducing HCl gas into the reaction chamber, and vapor deposition of a group III nitride crystal substance in the cleaned reaction chamber. A fabrication apparatus of a group III nitride crystal substance includes a configuration to introduce HCl gas into the reaction chamber, and a configuration to grow a group III nitride crystal substance by HVPE. Thus, a fabrication method of a group III nitride crystal substance including the method of effectively cleaning deposits adhering inside the reaction chamber during crystal growth, and a fabrication apparatus employed in the fabrication method are provided.
    Type: Grant
    Filed: November 18, 2010
    Date of Patent: March 26, 2013
    Assignee: Sumitomo Electric Industries, Ltd.
    Inventors: Hitoshi Kasai, Takuji Okahisa, Shunsuke Fujita, Naoki Matsumoto, Hideyuki Ijiri, Fumitaka Sato, Kensaku Motoki, Seiji Nakahata, Koji Uematsu, Ryu Hirota
  • Patent number: 8407051
    Abstract: A speech recognizing apparatus includes a speech start instructing section 3 for instructing to start speech recognition; a speech input section 1 for receiving uttered speech and converting to a speech signal; a speech recognizing section 2 for recognizing the speech on the basis of the speech signal; an utterance start time detecting section 4 for detecting duration from the time when the speech start instructing section instructs to the time when the speech input section delivers the speech signal; an utterance timing deciding section 5 for deciding utterance timing indicating whether the utterance start is quick or slow by comparing the duration detected by the utterance start time detecting section with a prescribed threshold; an interaction control section 6 for determining a content, which is to be shown when exhibiting a recognition result of the speech recognizing section, in accordance with the utterance timing decided; a system response generating section 7 for generating a system response on the b
    Type: Grant
    Filed: March 27, 2008
    Date of Patent: March 26, 2013
    Assignee: Mitsubishi Electric Corporation
    Inventors: Yuzuru Inoue, Tadashi Suzuki, Fumitaka Sato, Takayoshi Chikuri
  • Publication number: 20120126371
    Abstract: A method for producing a conductive nitride semiconductor substrate circuit includes the steps of forming, on an underlying substrate, a mask including dot or stripe masking portions having a width or diameter of 10 to 100 ?m and arranged at a spacing of 250 to 10,000 ?m; growing a nitride semiconductor crystal on the underlying substrate by hydride vapor phase epitaxy (HVPE) at a growth temperature of 1,040° C. to 1,150° C. by supplying a group III source gas, a group V source gas, and a silicon-containing gas in a V/III ratio of 1 to 10; and removing the underlying substrate, thus forming a free-standing conductive nitride semiconductor crystal substrate having a resistivity r of 0.0015 ?cm?r?0.01 ?cm, a thickness of 100 ?m or more, and a radius of bow curvature U of 3.5 m?U?8 m.
    Type: Application
    Filed: November 14, 2011
    Publication date: May 24, 2012
    Inventors: Fumitaka Sato, Seiji Nakahata, Makoto Kiyama
  • Patent number: 8140255
    Abstract: An on-vehicle guidance apparatus is characterized in including an output sound control means for acquiring a sound volume setting of onboard equipment, a sound volume determining means for determining whether or not the sound volume setting is smaller than a predetermined threshold, and a guidance output control means for issuing a command for carrying out voice guidance in response to a determination signal from the sound volume determining means at a time when the sound volume setting becomes smaller than the above-mentioned threshold.
    Type: Grant
    Filed: November 19, 2008
    Date of Patent: March 20, 2012
    Assignee: Mitsubishi Electric Corporation
    Inventors: Yuki Furumoto, Tadashi Suzuki, Fumitaka Sato
  • Publication number: 20120052100
    Abstract: To provide a cosmetic for eyelashes, which is excellent in the effect of imparting a feeling of voluminousness to eyelashes and exerts high base transparency without damage to the color inherent in the cosmetic base. Means of attaining the object A cosmetic for eyelashes which comprises (a) a silicone resin powder of particles having such a spiky-surface-sugar-candy-ball-like shape that small protrusions are present over the whole surface of each particle, (b) a volatile oil (e.g., low-boiling-point isoparaffinic hydrocarbon oil, low-boiling-point silicone oil, etc.), and (c) an oily gelling agent. Preferably, the cosmetic contains 1-20% by weight of component (a), 10-80% by mass of component (b) and 1-25% by mass of component (c). The cosmetic may optionally contain (d) a film-forming agent.
    Type: Application
    Filed: December 17, 2008
    Publication date: March 1, 2012
    Applicant: Shiseido Company, Ltd.
    Inventors: Nobuyuki Ide, Amane Tatsuta, Fumitaka Sato
  • Patent number: 8110484
    Abstract: A method for producing a conductive nitride semiconductor substrate circuit includes the steps of forming, on an underlying substrate, a mask including dot or stripe masking portions having a width or diameter of 10 to 100 ?m and arranged at a spacing of 250 to 10,000 ?m; growing a nitride semiconductor crystal on the underlying substrate by hydride vapor phase epitaxy (HVPE) at a growth temperature of 1,040° C. to 1,150° C. by supplying a group III source gas, a group V source gas, and a silicon-containing gas in a V/III ratio of 1 to 10; and removing the underlying substrate, thus forming a free-standing conductive nitride semiconductor crystal substrate having a resistivity r of 0.0015 ?cm?r?0.01 ?cm, a thickness of 100 ?m or more, and a radius of bow curvature U of 3.5 m?U?8 m.
    Type: Grant
    Filed: November 19, 2010
    Date of Patent: February 7, 2012
    Assignee: Sumitomo Electric Industries, Ltd.
    Inventors: Fumitaka Sato, Seiji Nakahata, Makoto Kiyama
  • Publication number: 20110218696
    Abstract: A vehicle operating device includes: a voice operation unit 3 for recognizing an uttered voice and outputting a recognition result; a spatial operation unit 2 for recognizing a movement performed within a space and outputting a recognition result; a main processing unit 4 for executing a processing corresponding to the recognition result transmitted from the voice operation unit and the recognition result transmitted from the spatial operation unit; and a display unit 5 for displaying an image generated in accordance with an instruction from the main processing unit, the image being superimposed on an actual scene that can be viewed through a windshield.
    Type: Application
    Filed: March 14, 2008
    Publication date: September 8, 2011
    Inventors: Reiko Okada, Kiyoshi Matsutani, Atsushi Kohno, Fumitaka Sato, Yuta Kawana, Wataru Yamazaki
  • Publication number: 20110208525
    Abstract: A voice recognizing apparatus includes a voice start instructing section 3 for instructing to start voice recognition; a voice input section 1 for receiving uttered voice and converting to a voice signal; a voice recognizing section 2 for recognizing the voice on the basis of the voice signal; an utterance start time detecting section 4 for detecting duration from the time when the voice start instructing section instructs to the time when the voice input section delivers the voice signal; an utterance timing deciding section 5 for deciding utterance timing indicating whether the utterance start is quick or slow by comparing the duration detected by the utterance start time detecting section with a prescribed threshold; an interaction control section 6 for determining a content, which is to be shown when exhibiting a recognition result of the voice recognizing section, in accordance with the utterance timing decided; a system response generating section 7 for generating a system response on the basis of the d
    Type: Application
    Filed: March 27, 2008
    Publication date: August 25, 2011
    Inventors: Yuzuru Inoue, Tadashi Suzuki, Fumitaka Sato, Takayoshi Chikuri
  • Publication number: 20110165551
    Abstract: On the basis of both screen transition data showing a correspondence between data showing whether a screen transition among operation screens is enabled or disabled and screen identifiers each identifying one of the operation screens, and associated data showing a correspondence between a manual item identifier and a screen identifier identifying an operation screen for enabling an operation based on an operation item specified by the manual item identifier to be performed, an information-to-be-presented deriving unit derives an operation screen corresponding to a manual item identifier acquired by a browsing detecting unit 3, and then displays this operation screen on an equipment display unit 10.
    Type: Application
    Filed: September 8, 2009
    Publication date: July 7, 2011
    Inventors: Wataru Yamazaki, Fumitaka Sato, Atsushi Kono, Hirofumi Fukumoto
  • Publication number: 20110121311
    Abstract: The present invention provides a method for manufacturing a semiconductor substrate including a low-resistance nitride layer laminated on a substrate, a method for manufacturing a semiconductor device, a semiconductor substrate, and a semiconductor device. A method for manufacturing a semiconductor substrate of the present invention includes the following steps: A nitride substrate having a principal surface and a back surface opposite to the principal surface is prepared. Vapor-phase ions are implanted into the back surface of the nitride substrate. The back surface of the nitride substrate is bonded to a dissimilar substrate to form a bonded substrate. The nitride substrate is partially separated from the bonded substrate to form a laminated substrate including the dissimilar substrate and a nitride layer. The laminated substrate is heat-treated at a temperature over 700° C.
    Type: Application
    Filed: November 10, 2010
    Publication date: May 26, 2011
    Applicant: SUMITOMO ELECTRIC INDUSTRIES, LTD.
    Inventors: Fumitaka SATO, Akihiro HACHIGO, Naoki MATSUMOTO, Yoko MAEDA, Seiji NAKAHATA
  • Patent number: 7915149
    Abstract: There is disclosed a method for forming a gallium nitride layer of which resistivity is 1×106 ?·cm or more, including steps of: forming a gallium nitride layer containing iron on a substrate; and heating said gallium nitride layer formed on said substrate.
    Type: Grant
    Filed: June 10, 2008
    Date of Patent: March 29, 2011
    Assignee: Sumitomo Electric Industries, Ltd.
    Inventors: Seiji Nakahata, Fumitaka Sato, Yoshiki Miura, Akinori Koukitu, Yoshinao Kumagai
  • Publication number: 20110065265
    Abstract: A fabrication method of a group III nitride crystal substance includes the steps of cleaning the interior of a reaction chamber by introducing HCl gas into the reaction chamber, and vapor deposition of a group III nitride crystal substance in the cleaned reaction chamber. A fabrication apparatus of a group III nitride crystal substance includes a configuration to introduce HCl gas into the reaction chamber, and a configuration to grow a group III nitride crystal substance by HVPE. Thus, a fabrication method of a group III nitride crystal substance including the method of effectively cleaning deposits adhering inside the reaction chamber during crystal growth, and a fabrication apparatus employed in the fabrication method are provided.
    Type: Application
    Filed: November 18, 2010
    Publication date: March 17, 2011
    Applicant: Sumitomo Electric Industries, Ltd.
    Inventors: Hitoshi KASAI, Takuji Okahisa, Shunsuke Fujita, Naoki Matsumoto, Hideuki Ijiri, Fumitaka Sato, Kensaku Motoki, Seiji Nakahata, Koji Uematsu, Ryu Hirota
  • Patent number: 7863167
    Abstract: Made available is a Group III nitride crystal manufacturing method whereby incidence of cracking in the III-nitride crystal when the III-nitride substrate is removed is kept to a minimum. III nitride crystal manufacturing method provided with: a step of growing, onto one principal face (10m) of a III-nitride substrate (10), III-nitride crystal (20) at least either whose constituent-atom type and ratios, or whose dopant type and concentration, differ from those of the III-nitride substrate (10); and a step of removing the III-nitride substrate (10) by vapor-phase etching.
    Type: Grant
    Filed: February 13, 2009
    Date of Patent: January 4, 2011
    Assignee: Sumitomo Electric Industries, Ltd.
    Inventors: Fumitaka Sato, Seiji Nakahata