Abstract: In a three dimensional shaping method and a three dimensional shaping apparatus, when a three dimensional object is obtained by laminating a resin material having thermoplasticity, the resin material is melted, and the melted resin material is laminated in a chamber to form resin layers. Next, the pressure in the chamber is adjusted to maintain the temperature of each of the resin layers within a predetermined temperature range in the chamber.

Abstract: In a culturing method, microalgae are cultured in a culturing solution while a gas containing carbon dioxide is supplied to the culturing solution. In an ion concentration acquisition step, an acquired value of a concentration of hydrogen carbonate ions in the culturing solution is obtained. In an ion concentration adjustment step, in the case that the acquired value does not reside within a set concentration range that is set beforehand, at least one of a temperature or a pH of the culturing solution is adjusted, whereby the concentration of hydrogen carbonate ions in the culturing solution is adjusted to reside within the set concentration range.

Abstract: In a three dimensional shaping method and a three dimensional shaping apparatus, when a three dimensional object is obtained by laminating a resin material having thermoplasticity, the resin material is melted, and the melted resin material is laminated in a chamber to form resin layers. Next, the pressure in the chamber is adjusted to maintain the temperature of each of the resin layers within a predetermined temperature range in the chamber.

Abstract: A resin material plasticizing device is equipped with a heating block in which a passage hole is formed to which there is supplied an elongate solid coating material, and which is capable of raising the temperature of an inner wall surface of the passage hole. At an upstream portion of the passage hole, so that an inner wall surface thereof is kept in contact with a side surface of the solid coating material, a cross section thereof which is perpendicular to an axial direction has a shape corresponding to the cross-sectional shape of the solid coating material. At least a part of the midstream portion is set in a manner so that a ratio of a circumferential length with respect to a cross-sectional area of a cross section perpendicular to the axial direction is greater than the same ratio of the upstream portion.

Abstract: A three-dimensional printing method includes a filament forming step, and a laminating step in order to laminate filaments possessing thermoplasticity and thereby obtain a three-dimensional modeled object. In the filament forming step, a coating material made of a thermoplastic resin, which is plasticized by heating, is adhered to at least a part of an outer circumferential surface of a core material, which is made of a thermoplastic resin having a lower temperature than that of the plasticized coating material, thereby obtaining the filaments. In the laminating step, the filaments, which are made up from the plasticized coating material, and the core material that is plastically deformable but at a lower temperature than the plasticized coating material, are laminated while being pressed with respect to a portion to be laminated.

Abstract: A resin material heating device configured to heat an elongate solid resin material includes a passage conduit and a hot air supply device. An inner diameter of the passage conduit is greater than a diameter of the resin material, and allows the resin material to pass therethrough in a state of being separated from the inner wall surface of the passage conduit. The hot air supply device supplies hot air to the interior of the passage conduit.

Abstract: A three-dimensional printing method includes a filament forming step, and a laminating step in order to laminate filaments possessing thermoplasticity and thereby obtain a three-dimensional modeled object. In the filament forming step, a coating material made of a thermoplastic resin, which is plasticized by heating, is adhered to at least a part of an outer circumferential surface of a core material, which is made of a thermoplastic resin having a lower temperature than that of the plasticized coating material, thereby obtaining the filaments. In the laminating step, the filaments, which are made up from the plasticized coating material, and the core material that is plastically deformable but at a lower temperature than the plasticized coating material, are laminated while being pressed with respect to a portion to be laminated.

Abstract: A resin material heating device configured to heat an elongate solid resin material includes a passage conduit and a hot air supply device. An inner diameter of the passage conduit is greater than a diameter of the resin material, and allows the resin material to pass therethrough in a state of being separated from the inner wall surface of the passage conduit. The hot air supply device supplies hot air to the interior of the passage conduit.

Abstract: A resin material plasticizing device is equipped with a heating block in which a passage hole is formed to which there is supplied an elongate solid coating material, and which is capable of raising the temperature of an inner wall surface of the passage hole. At an upstream portion of the passage hole, so that an inner wall surface thereof is kept in contact with a side surface of the solid coating material, a cross section thereof which is perpendicular to an axial direction has a shape corresponding to the cross-sectional shape of the solid coating material. At least a part of the midstream portion is set in a manner so that a ratio of a circumferential length with respect to a cross-sectional area of a cross section perpendicular to the axial direction is greater than the same ratio of the upstream portion.

Abstract: A three-dimensional printing method includes a filament forming step, and a laminating step in order to laminate filaments possessing thermoplasticity and thereby obtain a three-dimensional modeled object. In the filament forming step, a coating material made of a thermoplastic resin, which is plasticized by heating, is adhered to at least a part of an outer circumferential surface of a core material, which is made of a thermoplastic resin having a lower temperature than that of the plasticized coating material, thereby obtaining the filaments. In the laminating step, the filaments, which are made up from the plasticized coating material, and the core material that is plastically deformable but at a lower temperature than the plasticized coating material, are laminated while being pressed with respect to a portion to be laminated.

Abstract: There is provided a semiconductor device including: a circuit board formed by bonding a first and a second metal plates to both surfaces of an insulating substrate respectively, at least one semiconductor element to be bonded to an external surface of the first metal plate through a first solder, and a radiating base plate to be bonded to an external surface of the second metal plate through a second solder, wherein the first and the second solders are constituted by solder materials of the same type, and a ratio of a sum of thicknesses of the first and the second metal plates to a thickness of the insulating substrate is set in a predetermined range to ensure an endurance to a temperature stress of each of the first and the second solders.

Abstract: A semiconductor device is composed of a pair of semiconductor chips (402, 404) arranged parallel on the same flat plane; a high voltage bus bar (21) bonded on the surface on the collector side of one semiconductor chip (402); a low voltage bus bar (23) connected to the surface on the emitter side of the other semiconductor chip (404) with a bonding wire (27); a first metal wiring board (24-1) connected to the surface on the emitter side of the semiconductor chip (402) with a bonding wire (26); a second metal wiring board (24-2) bonded on the surface on the collector side of the semiconductor chip (404); a third metal wiring board (24-3) connected to the first metal wiring board (24-1); a fourth metal wiring board (24-4) connected by being bent from an end portion of the second metal wiring board (24-2); and an output bus bar (24) having output terminals (405) extending from each end portion of the third metal wiring board (24-3) and that of the fourth metal wiring board (24-4).

Abstract: A semiconductor device includes first and second assembled bodies (12A, 12B). The first assembled body is provided with a first semiconductor chip, a high voltage bus bar (21) connected to one surface of the first semiconductor chip, a first metal wiring board (24-1) connected to the other surface of the first semiconductor chip with a bonding wire, and a third metal wiring board (24-3) connected to the first metal wiring board. The second assembled body is provided with a second semiconductor chip, a low voltage bus bar (23) connected to one surface of the second semiconductor chip with a bonding wire, a second metal wiring board (24-2) connected to the other surface of the second semiconductor chip, and a fourth metal wiring board (24-4) connected by being returned from an end portion of the second metal wiring board and arranged in parallel to the second metal wiring board.

Abstract: There is provided a semiconductor device including: a circuit board formed by bonding a first and a second metal plates to both surfaces of an insulating substrate respectively, at least one semiconductor element to be bonded to an external surface of the first metal plate through a first solder, and a radiating base plate to be bonded to an external surface of the second metal plate through a second solder, wherein the first and the second solders are constituted by solder materials of the same type, and a ratio of a sum of thicknesses of the first and the second metal plates to a thickness of the insulating substrate is set in a predetermined range to ensure an endurance to a temperature stress of each of the first and the second solders.

Abstract: A semiconductor device is composed of a pair of semiconductor chips (402, 404) arranged parallel on the same flat plane; a high voltage bus bar (21) bonded on the surface on the collector side of one semiconductor chip (402); a low voltage bus bar (23) connected to the surface on the emitter side of the other semiconductor chip (404) with a bonding wire (27); a first metal wiring board (24-1) connected to the surface on the emitter side of the semiconductor chip (402) with a bonding wire (26); a second metal wiring board (24-2) bonded on the surface on the collector side of the semiconductor chip (404); a third metal wiring board (24-3) connected to the first metal wiring board (24-1); a fourth metal wiring board (24-4) connected by being bent from an end portion of the second metal wiring board (24-2); and an output bus bar (24) having output terminals (405) extending from each end portion of the third metal wiring board (24-3) and that of the fourth metal wiring board (24-4).

Abstract: A semiconductor device includes first and second assembled bodies (12A, 12B). The first assembled body is provided with a first semiconductor chip, a high voltage bus bar (21) connected to one surface of the first semiconductor chip, a first metal wiring board (24-1) connected to the other surface of the first semiconductor chip with a bonding wire, and a third metal wiring board (24-3) connected to the first metal wiring board. The second assembled body is provided with a second semiconductor chip, a low voltage bus bar (23) connected to one surface of the second semiconductor chip with a bonding wire, a second metal wiring board (24-2) connected to the other surface of the second semiconductor chip, and a fourth metal wiring board (24-4) connected by being returned from an end portion of the second metal wiring board and arranged in parallel to the second metal wiring board.

Abstract: A semiconductor device includes an intermediate layer provided between a semiconductor element and a heat sink. The intermediate layer moderates thermal stress resulting from a difference between thermal expansion of the semiconductor element and thermal expansion of the heat sink arising due to heat produced by the semiconductor element. This thermal stress moderation reduces warping of the semiconductor device as a whole.

Abstract: A semiconductor device includes an intermediate layer provided between a semiconductor element and a heat sink. The intermediate layer moderates thermal stress resulting from a difference between thermal expansion of the semiconductor element and thermal expansion of the heat sink arising due to heat produced by the semiconductor element. This thermal stress moderation reduces warping of the semiconductor device as a whole.

Abstract: A control apparatus for a welding robot has a welding gun which is provided at a front end of a robot arm to be driven by plural kinds of servomotors. An amplifier circuit board is provided so as to mount thereon appropriate inverters by selecting out of those corresponding to respective kinds of servomotors and an inverter for the welding gun. A servo software corresponding to each of the inverters is called out of a memory device by discriminating the kind of each of the inverters. In a method of teaching the welding robot in which the welding gun is opened and closed by a servomotor, plural kinds of opening and closing patterns of the welding gun are set in advance. An appropriate opening and closing pattern is selected out of the plural kinds of opening and closing patterns in accordance with the motion of the robot arm, and the selected pattern is made the teaching data relating to the opening and closing of the welding gun.

Abstract: Before a deterioration of a secondary current sensor is detected, a controller effects a feedback control process based on a secondary current from the secondary winding of a welding transformer which is energized by an inverter, for thereby controlling a welding current with a high degree of accuracy, e.g., an accuracy level of .+-.1%. At the same time, it is monitored whether a detected value of a primary current from the primary winding of the welding transformer, which is detected by a primary current sensor, exceeds a predetermined allowable range with respect to a reference value of the primary current. If the detected value of the primary current exceeds the predetermined allowable range, then it is decided that the secondary current sensor is deteriorated.