Patents by Inventor Gabriele NAVARRO
Gabriele NAVARRO has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240099164Abstract: A phase change memory cell including: a first layer in a phase change material; a heating element located under the first layer; a second insulating layer coating a side of the heating element; and a third insulating layer interposed between the first and second layers, in a material having a density higher than that of the material of the second layer.Type: ApplicationFiled: September 14, 2023Publication date: March 21, 2024Applicant: Commissariat à I'Énergie Atomique et aux Énergies AlternativesInventors: Gabriele Navarro, Guillaume Bourgeois, Marie-Claire Cyrille
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Publication number: 20240099168Abstract: A phase change memory cell including: a first layer in a phase change material; a heating element located under the first layer; a second insulating layer coating a side of the heating element; and first stack comprising a third encapsulation layer coating the side faces of the second layer and a fourth encapsulation layer coating the third layer and being in a material having a lower density than that of the material of the third layer.Type: ApplicationFiled: September 14, 2023Publication date: March 21, 2024Applicant: Commissariat á I'Énergie Atomique et aux Énergies AlternativesInventors: Gabriele Navarro, Guillaume Bourgeois, Marie-Claire Cyrille
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Patent number: 11923006Abstract: A selective non-volatile memory device includes a first electrode, a second electrode and at least one layer made of an active material. The device has at least two programmable memory states associated with two voltage thresholds and also provides a selective role when it is in a highly resistive state.Type: GrantFiled: November 2, 2020Date of Patent: March 5, 2024Assignee: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVESInventors: Gabriele Navarro, Anthonin Verdy
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Publication number: 20230389450Abstract: Phase-change memory cells and methods of manufacturing and operating phase-change memory cells are provided. In at least one embodiment, a phase-change memory cell includes a heater and a stack. The stack includes at least one germanium layer or a nitrogen doped germanium layer, and at least one layer of a first alloy including germanium, antimony, and tellurium. A resistive layer is located between the heater and the stack.Type: ApplicationFiled: April 21, 2023Publication date: November 30, 2023Applicants: STMICROELECTRONICS S.r.l., COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVESInventors: Paolo Giuseppe CAPPELLETTI, Gabriele NAVARRO
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Patent number: 11800820Abstract: A method for programming a phase change memory including a first layer of a phase change material capable of switching between a crystalline and an amorphous state and vice versa, the method including applying a programming current through the first layer so that an evolution of the areal density of this current as a function of time t decreases from a first level, between a first time and a second time, following a first evolution in time respecting, or being close to J 0 ? ( t ) = K t where K is a constant.Type: GrantFiled: November 22, 2021Date of Patent: October 24, 2023Assignee: Commissariat à l'Énergie Atomique et aux Énergies AlternativesInventors: Gabriele Navarro, Anna-Lisa Serra, Guillaume Bourgeois, Chiara Sabbione
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Patent number: 11711927Abstract: A filament type non-volatile memory device, includes a first electrode, a second electrode and an active layer extending between the first electrode and the second electrode, the active layer electrically interconnecting the first electrode to the second electrode, the device being suitable for having: a low resistive state, in which a conducting filament electrically interconnecting the first electrode to the second electrode uninterruptedly extends from end to end through the active layer, the filament having a low electric resistance, and a highly resistive state, in which the filament is broken, the filament having a high electric resistance. The device further includes a shunt resistance electrically connected in parallel to the active layer, between the first electrode and the second electrode.Type: GrantFiled: August 28, 2020Date of Patent: July 25, 2023Assignees: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES, UNIVERSITE GRENOBLE ALPES, CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUEInventors: Gabriele Navarro, Nicolas Guillaume, Serge Blonkowski, Patrice Gonon, Eric Jalaguier
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Patent number: 11707001Abstract: A phase change resistive memory includes an upper electrode; a lower electrode; a layer made of an active material, called an active layer; the memory passing from a highly resistive state to a weakly resistive state by application of a voltage or a current between the upper electrode and the lower electrode and wherein the material of the active layer is a ternary composed of germanium Ge, tellurium Te and antimony Sb, the ternary including between 60 and 66% of antimony Sb.Type: GrantFiled: January 27, 2020Date of Patent: July 18, 2023Assignee: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVESInventor: Gabriele Navarro
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Patent number: 11653579Abstract: Phase-change memory cells and methods of manufacturing and operating phase-change memory cells are provided. In at least one embodiment, a phase-change memory cell includes a heater and a stack. The stack includes at least one germanium layer or a nitrogen doped germanium layer, and at least one layer of a first alloy including germanium, antimony, and tellurium. A resistive layer is located between the heater and the stack.Type: GrantFiled: February 3, 2021Date of Patent: May 16, 2023Inventors: Paolo Giuseppe Cappelletti, Gabriele Navarro
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Patent number: 11641786Abstract: A phase-change memory cell includes, in at least a first portion, a stack of at least one germanium layer covered by at least one layer made of a first alloy of germanium, antimony, and tellurium In a programmed state, resulting from heating a portion of the stack to a sufficient temperature, portions of layers of germanium and of the first alloy form a second alloy made up of germanium, antimony, and tellurium, where the second alloy has a higher germanium concentration than the first alloy.Type: GrantFiled: June 6, 2022Date of Patent: May 2, 2023Assignees: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES, STMicroelectronics S.r.l.Inventors: Paolo Giuseppe Cappelletti, Gabriele Navarro
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Publication number: 20220366981Abstract: A selective non-volatile memory device includes a first electrode, a second electrode and at least one layer made of an active material. The device has at least two programmable memory states associated with two voltage thresholds and also provides a selective role when it is in a highly resistive state.Type: ApplicationFiled: November 2, 2020Publication date: November 17, 2022Inventors: Gabriele NAVARRO, Anthonin VERDY
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Publication number: 20220302379Abstract: A phase-change memory cell includes, in at least a first portion, a stack of at least one germanium layer covered by at least one layer made of a first alloy of germanium, antimony, and tellurium In a programmed state, resulting from heating a portion of the stack to a sufficient temperature, portions of layers of germanium and of the first alloy form a second alloy made up of germanium, antimony, and tellurium, where the second alloy has a higher germanium concentration than the first alloy.Type: ApplicationFiled: June 6, 2022Publication date: September 22, 2022Applicants: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES, STMicroelectronics S.r.l.Inventors: Paolo Giuseppe CAPPELLETTI, Gabriele NAVARRO
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Publication number: 20220231225Abstract: A selector for a memory cell, intended to change from a resistive state to a conductive state so as to respectively prohibit or authorize access to the memory cell, characterized in that it is made of an alloy consisting of germanium, selenium, arsenic and tellurium.Type: ApplicationFiled: May 4, 2020Publication date: July 21, 2022Applicant: Commissariat à I'Énergie Atomique et aux Énergies AlternativesInventors: Anthonin Verdy, Gilbert Sassine, Gabriel Molas, Gabriele Navarro
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Publication number: 20220180925Abstract: A selector device intended to select a resistive memory cell includes a first selector device including a first active material and a second selector device including a second active material, the first selector device and the second selector device being connected in parallel.Type: ApplicationFiled: December 7, 2021Publication date: June 9, 2022Inventor: Gabriele NAVARRO
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Patent number: 11355702Abstract: A phase-change memory cell includes, in at least a first portion, a stack of at least one germanium layer covered by at least one layer made of a first alloy of germanium, antimony, and tellurium In a programmed state, resulting from heating a portion of the stack to a sufficient temperature, portions of layers of germanium and of the first alloy form a second alloy made up of germanium, antimony, and tellurium, where the second alloy has a higher germanium concentration than the first alloy.Type: GrantFiled: August 6, 2019Date of Patent: June 7, 2022Assignees: STMicroelectronics S.r.l., Commissariat A L'Energie Atomique et aux Energies AlternativesInventors: Paolo Giuseppe Cappelletti, Gabriele Navarro
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Publication number: 20220165945Abstract: A phase change memory device comprising, between first and second electrodes: a first layer of a phase change material; and a second germanium nitride-based layer, in contact with the first layer, the nitrogen percentage in the second layer being between 20% and 35%, and the second layer having a channel of the phase change material of the first layer passing through it.Type: ApplicationFiled: November 22, 2021Publication date: May 26, 2022Applicant: Commissariat à l'Énergie Atomique et aux Énergies AlternativesInventors: Gabriele Navarro, Chiara Sabbione, Guillaume Bourgeois, Anna-Lisa Serra
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Publication number: 20220165946Abstract: A method for programming a phase change memory including a first layer of a phase change material capable of switching between a crystalline and an amorphous state and vice versa, the method including applying a programming current through the first layer so that an evolution of the areal density of this current as a function of time t decreases from a first level, between a first time and a second time, following a first evolution in time respecting, or being close to J 0 ? ( t ) = K t where K is a constant.Type: ApplicationFiled: November 22, 2021Publication date: May 26, 2022Applicant: Commissariat à l'Énergie Atomique et aux Énergies AlternativesInventors: Gabriele Navarro, Anna-Lisa Serra, Guillaume Bourgeois, Chiara Sabbione
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Publication number: 20220020923Abstract: A phase-change material includes germanium Ge, tellurium Te and antimony Sb, including at least 37% germanium Ge, the ratio between the quantity of antimony Sb and the quantity of tellurium Te being between 1.5 and 4.Type: ApplicationFiled: July 15, 2021Publication date: January 20, 2022Inventors: Gabriele NAVARRO, Marie-Claire CYRILLE
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Patent number: 11101430Abstract: A phase-change storage element including, in a first portion, a stack of amorphous layers, the thickness of each layer in the stack being smaller than or equal to 5 nm.Type: GrantFiled: August 5, 2019Date of Patent: August 24, 2021Assignee: Commissariat à l'Énergie Atomique et aux Énergies AlternativesInventors: Gabriele Navarro, Mathieu Bernard, Marie-Claire Cyrille, Chiara Sabbione
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Publication number: 20210249599Abstract: A selection element including, in a first portion, a stack of amorphous layers, the thickness of each layer in the stack being smaller than or equal to 20 nm.Type: ApplicationFiled: February 5, 2021Publication date: August 12, 2021Applicant: Commissariat à l'Énergie Atomique et aux Énergies AlternativesInventors: Gabriele Navarro, Mathieu Bernard, Chiara Sabbione, Marie-Claire Cyrille, Camille Laguna
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Publication number: 20210249594Abstract: Phase-change memory cells and methods of manufacturing and operating phase-change memory cells are provided. In at least one embodiment, a phase-change memory cell includes a heater and a stack. The stack includes at least one germanium layer or a nitrogen doped germanium layer, and at least one layer of a first alloy including germanium, antimony, and tellurium. A resistive layer is located between the heater and the stack.Type: ApplicationFiled: February 3, 2021Publication date: August 12, 2021Inventors: Paolo Giuseppe CAPPELLETTI, Gabriele NAVARRO