Abstract: A phase change memory cell including: a first layer in a phase change material; a heating element located under the first layer; a second insulating layer coating a side of the heating element; and a third insulating layer interposed between the first and second layers, in a material having a density higher than that of the material of the second layer.

Abstract: A phase change memory cell including: a first layer in a phase change material; a heating element located under the first layer; a second insulating layer coating a side of the heating element; and first stack comprising a third encapsulation layer coating the side faces of the second layer and a fourth encapsulation layer coating the third layer and being in a material having a lower density than that of the material of the third layer.

Abstract: A selective non-volatile memory device includes a first electrode, a second electrode and at least one layer made of an active material. The device has at least two programmable memory states associated with two voltage thresholds and also provides a selective role when it is in a highly resistive state.

Abstract: Phase-change memory cells and methods of manufacturing and operating phase-change memory cells are provided. In at least one embodiment, a phase-change memory cell includes a heater and a stack. The stack includes at least one germanium layer or a nitrogen doped germanium layer, and at least one layer of a first alloy including germanium, antimony, and tellurium. A resistive layer is located between the heater and the stack.

Abstract: A method for programming a phase change memory including a first layer of a phase change material capable of switching between a crystalline and an amorphous state and vice versa, the method including applying a programming current through the first layer so that an evolution of the areal density of this current as a function of time t decreases from a first level, between a first time and a second time, following a first evolution in time respecting, or being close to J 0 ? ( t ) = K t where K is a constant.

Abstract: A filament type non-volatile memory device, includes a first electrode, a second electrode and an active layer extending between the first electrode and the second electrode, the active layer electrically interconnecting the first electrode to the second electrode, the device being suitable for having: a low resistive state, in which a conducting filament electrically interconnecting the first electrode to the second electrode uninterruptedly extends from end to end through the active layer, the filament having a low electric resistance, and a highly resistive state, in which the filament is broken, the filament having a high electric resistance. The device further includes a shunt resistance electrically connected in parallel to the active layer, between the first electrode and the second electrode.

Abstract: A phase change resistive memory includes an upper electrode; a lower electrode; a layer made of an active material, called an active layer; the memory passing from a highly resistive state to a weakly resistive state by application of a voltage or a current between the upper electrode and the lower electrode and wherein the material of the active layer is a ternary composed of germanium Ge, tellurium Te and antimony Sb, the ternary including between 60 and 66% of antimony Sb.

Abstract: Phase-change memory cells and methods of manufacturing and operating phase-change memory cells are provided. In at least one embodiment, a phase-change memory cell includes a heater and a stack. The stack includes at least one germanium layer or a nitrogen doped germanium layer, and at least one layer of a first alloy including germanium, antimony, and tellurium. A resistive layer is located between the heater and the stack.

Abstract: A phase-change memory cell includes, in at least a first portion, a stack of at least one germanium layer covered by at least one layer made of a first alloy of germanium, antimony, and tellurium In a programmed state, resulting from heating a portion of the stack to a sufficient temperature, portions of layers of germanium and of the first alloy form a second alloy made up of germanium, antimony, and tellurium, where the second alloy has a higher germanium concentration than the first alloy.

Abstract: A selective non-volatile memory device includes a first electrode, a second electrode and at least one layer made of an active material. The device has at least two programmable memory states associated with two voltage thresholds and also provides a selective role when it is in a highly resistive state.

Abstract: A phase-change memory cell includes, in at least a first portion, a stack of at least one germanium layer covered by at least one layer made of a first alloy of germanium, antimony, and tellurium In a programmed state, resulting from heating a portion of the stack to a sufficient temperature, portions of layers of germanium and of the first alloy form a second alloy made up of germanium, antimony, and tellurium, where the second alloy has a higher germanium concentration than the first alloy.

Abstract: A selector for a memory cell, intended to change from a resistive state to a conductive state so as to respectively prohibit or authorize access to the memory cell, characterized in that it is made of an alloy consisting of germanium, selenium, arsenic and tellurium.

Abstract: A selector device intended to select a resistive memory cell includes a first selector device including a first active material and a second selector device including a second active material, the first selector device and the second selector device being connected in parallel.

Abstract: A phase-change memory cell includes, in at least a first portion, a stack of at least one germanium layer covered by at least one layer made of a first alloy of germanium, antimony, and tellurium In a programmed state, resulting from heating a portion of the stack to a sufficient temperature, portions of layers of germanium and of the first alloy form a second alloy made up of germanium, antimony, and tellurium, where the second alloy has a higher germanium concentration than the first alloy.

Abstract: A phase change memory device comprising, between first and second electrodes: a first layer of a phase change material; and a second germanium nitride-based layer, in contact with the first layer, the nitrogen percentage in the second layer being between 20% and 35%, and the second layer having a channel of the phase change material of the first layer passing through it.

Abstract: A method for programming a phase change memory including a first layer of a phase change material capable of switching between a crystalline and an amorphous state and vice versa, the method including applying a programming current through the first layer so that an evolution of the areal density of this current as a function of time t decreases from a first level, between a first time and a second time, following a first evolution in time respecting, or being close to J 0 ? ( t ) = K t where K is a constant.

Abstract: A phase-change material includes germanium Ge, tellurium Te and antimony Sb, including at least 37% germanium Ge, the ratio between the quantity of antimony Sb and the quantity of tellurium Te being between 1.5 and 4.

Abstract: A phase-change storage element including, in a first portion, a stack of amorphous layers, the thickness of each layer in the stack being smaller than or equal to 5 nm.

Abstract: A selection element including, in a first portion, a stack of amorphous layers, the thickness of each layer in the stack being smaller than or equal to 20 nm.

Abstract: Phase-change memory cells and methods of manufacturing and operating phase-change memory cells are provided. In at least one embodiment, a phase-change memory cell includes a heater and a stack. The stack includes at least one germanium layer or a nitrogen doped germanium layer, and at least one layer of a first alloy including germanium, antimony, and tellurium. A resistive layer is located between the heater and the stack.