Abstract: Ampoules for a semiconductor manufacturing precursors and methods of use are described. The ampoules include a container with an inlet port and an outlet port. Alternating first and second elongate walls in the container are arranged to define longitudinal flow channels containing a precursor material, and alternating first and second passages between each of the longitudinal flow channels permitting fluid communication between adjacent longitudinal flow channels, wherein the first passages are located in a lower portion of the precursor cavity and the second passages are located an upper portion of the cavity. A flow path is defined by the longitudinal flow channels and the passages, through which a carrier gas flows in contact with the precursor material. In one or more embodiments, the precursor material is a solid.

Abstract: Heater assemblies comprising a cylindrical body with a surface and a central axis including a plurality of heating elements are described. The plurality of heating elements is axially spaced on the surface of the cylindrical body. Each of the heating elements forms an axially spaced heating zone. Each heating element has a spiral shape with an inner end and an outer end defining a length of the heating element. Each coil of the spiral shape is spaced from an adjacent coil by a distance sufficient to prevent arcing between adjacent coils.

Abstract: A heating module for use in a substrate processing chamber. The heating module having a housing with a heat source therein. The heating module can be part of a gas distribution assembly positioned above a susceptor assembly to heat the top surface of the susceptor and wafers directly. The heating module can have constant or variable power output. Processing chambers and methods of processing a wafer using the heating module are described.

Abstract: Apparatus and methods for measuring the proximity between two components using a hardstop, an actuator and an emitter/detector passing light through a passage in the actuator are disclosed. The passage provides attenuation to the light which changes as the gap between the components changes allowing the measurement and control of the gap. Methods of determining the topology of the components using the apparatus are also described.

Abstract: Apparatus and methods for measuring the proximity between two components using a hardstop, an actuator and an emitter/detector passing light through a passage in the actuator are disclosed. The passage provides attenuation to the light which changes as the gap between the components changes allowing the measurement and control of the gap. Methods of determining the topology of the components using the apparatus are also described.

Abstract: A modular plasma source assembly for use with a processing chamber is described. The assembly includes an RF hot electrode with an end dielectric and a sliding ground connection positioned adjacent the sides of the electrode. A seal foil connects the sliding ground connection to the housing to provide a grounded sliding ground connection separated from the hot electrode by the end dielectric. A coaxial feed line passes through a conduit into the RF hot electrode isolated from the processing environment so that the coaxial RF feed line is at atmospheric pressure while the plasma processing region is at reduced pressure.

Abstract: Heater assemblies comprising a cylindrical body with a surface and a central axis including a plurality of heating elements are described. The plurality of heating elements is axially spaced on the surface of the cylindrical body. Each of the heating elements forms an axially spaced heating zone. Each heating element has a spiral shape with an inner end and an outer end defining a length of the heating element. Each coil of the spiral shape is spaced from an adjacent coil by a distance sufficient to prevent arcing between adjacent coils.

Abstract: Apparatus and methods for measuring the proximity between two components using a hardstop, an actuator and an emitter/detector passing light through a passage in the actuator are disclosed. The passage provides attenuation to the light which changes as the gap between the components changes allowing the measurement and control of the gap. Methods of determining the topology of the components using the apparatus are also described.

Abstract: Heating apparatus for heating substrates having a graphite body and at least one heating element comprising a continuous section of material disposed within the body are disclosed. Processing chambers incorporating the heating apparatus are also disclosed.

Abstract: A modular plasma source assembly for use with a processing chamber is described. The assembly includes an RF hot electrode with an end dielectric and a sliding ground connection positioned adjacent the sides of the electrode. A seal foil connects the sliding ground connection to the housing to provide a grounded sliding ground connection separated from the hot electrode by the end dielectric. A coaxial feed line passes through a conduit into the RF hot electrode isolated from the processing environment so that the coaxial RF feed line is at atmospheric pressure while the plasma processing region is at reduced pressure.

Abstract: Apparatus and methods for measuring the proximity between two components using a hardstop, an actuator and an emitter/detector passing light through a passage in the actuator are disclosed. The passage provides attenuation to the light which changes as the gap between the components changes allowing the measurement and control of the gap. Methods of determining the topology of the components using the apparatus are also described.

Abstract: A modular plasma source assembly for use with a processing chamber is described. The assembly includes an RF hot electrode with an end dielectric and a sliding ground connection positioned adjacent the sides of the electrode. A seal foil connects the sliding ground connection to the housing to provide a grounded sliding ground connection separated from the hot electrode by the end dielectric. A coaxial feed line passes through a conduit into the RF hot electrode isolated from the processing environment so that the coaxial RF feed line is at atmospheric pressure while the plasma processing region is at reduced pressure.

Abstract: A heating module for use in a substrate processing chamber. The heating module having a housing with a heat source therein. The heating module can be part of a gas distribution assembly positioned above a susceptor assembly to heat the top surface of the susceptor and wafers directly. The heating module can have constant or variable power output. Processing chambers and methods of processing a wafer using the heating module are described.

Abstract: Apparatus and methods for processing a plurality of semiconductor wafers on a susceptor assembly so that the temperature across the susceptor assembly is uniform are described. A plurality of linear lamps are positioned and controlled in zones to provide uniform heating.

Abstract: Provided are atomic layer deposition apparatus and methods including a gas distribution plate comprising a plurality of elongate gas ports with gas curtains extending along the outer length of the gas distribution plate. Also provided are atomic layer deposition apparatuses and methods including a gas distribution plate with a plurality of elongate gas ports with gas curtains.

Abstract: A modular plasma source assembly for use with a processing chamber is described. The assembly includes an RF hot electrode with an end dielectric and a sliding ground connection positioned adjacent the sides of the electrode. A seal foil connects the sliding ground connection to the housing to provide a grounded sliding ground connection separated from the hot electrode by the end dielectric. A coaxial feed line passes through a conduit into the RF hot electrode isolated from the processing environment so that the coaxial RF feed line is at atmospheric pressure while the plasma processing region is at reduced pressure.

Abstract: Provided are assemblies comprising an elongate enclosure comprising a material resistant to thermal expansion at temperatures experienced in a processing chamber. At least one heating element extends along a longitudinal axis of the elongate enclosure through an open interior region allowing a flow of gases to pass the heating element in a direction substantially perpendicular to the longitudinal axis. Methods of processing substrates using a heating element to excite gaseous precursor species are also described.

Abstract: Provided are atomic layer deposition apparatus and methods including a gas distribution plate comprising a plurality of elongate gas ports including at least one first reactive gas port in fluid communication with a first reactive gas and at least one second reactive gas port in fluid communication with a gas manifold. The gas manifold is in fluid communication with at least a second reactive gas different from the first reactive gas and a purge gas. Also provided are atomic layer deposition apparatus and methods including linear energy sources in one or more of region before the gas distribution plate and a region after the gas distribution plate.

Abstract: Provided are gas distribution plates for atomic layer deposition apparatus including a hot wire or hot wire unit which can be heated to excite gaseous species while processing a substrate. Methods of processing substrates using a hot wire to excite gaseous precursor species are also described.

Abstract: Provided are atomic layer deposition apparatus and methods including a gas distribution plate comprising at least one gas injector unit. Each gas injector unit comprises a plurality of elongate gas injectors including at least two first reactive gas injectors and at least one second reactive gas injector, the at least two first reactive gas injectors surrounding the at least one second reactive gas injector. Also provided are atomic layer deposition apparatuses and methods including a gas distribution plate with a plurality of gas injector units.