Patents by Inventor Gen Tamamushi

Gen Tamamushi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20200312623
    Abstract: A substrate processing apparatus includes a processing chamber that accommodates a substrate, a gas supply having a gas diffusion chamber and a plurality of gas holes that communicates the gas diffusion chamber with the processing chamber, a gas inlet tube that introduces a gas into the gas diffusion chamber of the gas supply, and a gas source connected to the gas inlet tube and supplies the gas to the gas inlet tube. The gas supply has a volume variable device for changing a volume in the gas diffusion chamber.
    Type: Application
    Filed: March 30, 2020
    Publication date: October 1, 2020
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Kazuki MOYAMA, Kazuya NAGASEKI, Shinji HIMORI, Michishige SAITO, Gen TAMAMUSHI
  • Publication number: 20200234931
    Abstract: A method for controlling an electrostatic attractor, which attracts an electrode to a gas plate provided in an upper portion of a plasma processing apparatus, includes, among a plasma generation period in which plasma is generated by the plasma processing apparatus and an idle period in which no plasma is generated by the plasma processing apparatus, applying voltages having polarities different from each other to first and second electrodes of the electrostatic attractor in at least the idle period.
    Type: Application
    Filed: January 14, 2020
    Publication date: July 23, 2020
    Inventor: Gen TAMAMUSHI
  • Publication number: 20200234930
    Abstract: An upper electrode for a plasma processing apparatus, includes an electrode having a gas discharge hole, a gas plate having a gas flow path formed at a position facing the gas discharge hole to supply a processing gas to the gas discharge hole, an electrostatic attraction part interposed between the electrode and the gas plate and having a contact surface that is in contact with a lower surface of the gas plate and an attraction surface that attracts an upper surface of the electrode, and a shield that shields radicals or gas moving from the gas discharge hole to a gap between the electrode and the gas plate.
    Type: Application
    Filed: January 9, 2020
    Publication date: July 23, 2020
    Applicant: Tokyo Electron Limited
    Inventors: Gen TAMAMUSHI, Kazuya NAGASEKI, Chishio KOSHIMIZU
  • Publication number: 20200144031
    Abstract: An etching method is performed in a state where a substrate is placed on a substrate support provided in a chamber of a plasma processing apparatus. In the etching method, radio-frequency power is supplied to generate plasma from a gas in the chamber. Subsequently, a negative DC voltage is applied to a lower electrode of the substrate support during the supplying of the radio-frequency power to etch the substrate with positive ions from plasma. Subsequently, the applying of the negative DC voltage to the lower electrode and the supplying of the radio-frequency power are stopped to generate negative ions. Subsequently, a positive DC voltage is applied to the lower electrode in a state where the supply of the radio-frequency power is stopped to supply the negative ions to the substrate.
    Type: Application
    Filed: November 5, 2019
    Publication date: May 7, 2020
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Gen TAMAMUSHI, Kazuya NAGASEKI
  • Publication number: 20190164726
    Abstract: A plasma processing apparatus includes a processing chamber in which plasma is generated, and a protection target member which is provided in the processing chamber and needs to be protected from consumption by the plasma. The protection target member is made of a material having a property of integrating radicals and/or anions or a protective layer containing the material is provided on a surface of the protection target member.
    Type: Application
    Filed: November 27, 2018
    Publication date: May 30, 2019
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Gen TAMAMUSHI, Naoyuki SATOH, Akihiro YOKOTA, Shinji HIMORI
  • Publication number: 20190148155
    Abstract: In a substrate processing method, electrons having a first energy are supplied from an electron beam generator into an inner space of a chamber body of a substrate processing apparatus to generate negative ions by attaching the electrons to molecules in a processing gas supplied to the inner space. Then a positive bias voltage is applied to an electrode of a supporting table that supports a substrate mounted on thereon in the inner space to attract the negative ions to the substrate.
    Type: Application
    Filed: November 8, 2018
    Publication date: May 16, 2019
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Shinji KUBOTA, Kazuya NAGASEKI, Akihiro YOKOTA, Gen TAMAMUSHI
  • Publication number: 20180374679
    Abstract: A power feed member having high heat insulation and capable of transmitting a power at a low loss is provided. The power feed member configured to supply a power includes a first conductive member; a second conductive member; and a connecting member configured to electrically connect the first conductive member and the second conductive member. At least a part of the connecting member is formed of a porous metal or multiple bulk metals.
    Type: Application
    Filed: June 25, 2018
    Publication date: December 27, 2018
    Inventors: Shunichi Ito, Shinji Himori, Etsuji Ito, Naokazu Furuya, Gen Tamamushi