Abstract: A light emitting device includes a first layer including a first light emitting element that has a first light emission region and a first transparent insulation member that covers the first light emitting element; a second layer stacked on the first layer and including a second light emitting element that has a second light emission region and a second transparent insulation member that covers the second light emitting element; and a third layer stacked on the second layer and including a third light emitting element that has a third light emission region, at least partially overlapping with the first light emission region and the second light emission region, and a third transparent insulation member that covers the third light emitting element, wherein the third light emission region is formed so that its area is larger than the first light emission region and the second light emission region.

Abstract: A manufacturing method of a semiconductor element includes forming a plurality of islands, each including a semiconductor layer containing a nitride semiconductor and a support formed on the semiconductor layer, on a sapphire substrate, joining the support to a retention substrate via an adhesive member, peeling off the semiconductor layer from the sapphire substrate by irradiating the semiconductor layer with laser light, and polishing a surface of the semiconductor layers peeled off from the sapphire substrate.

Abstract: A manufacturing method of a semiconductor element includes forming a plurality of semiconductor layers on a sapphire substrate, each of the semiconductor layers having a first surface on the sapphire substrate side and a second surface on the opposite side, joining the second surfaces of the plurality of semiconductor layers to a retention member via an adhesive member, peeling off the plurality of semiconductor layers from the sapphire substrate by irradiating the first surfaces of the plurality of semiconductor layers with laser light, and polishing the first surfaces of the plurality of semiconductor layers. At least one semiconductor layer among the plurality of semiconductor layers includes a polishing indication part extending from the second surface toward the first surface. The polishing is executed until the polishing indication part is exposed to the polished surface.

Abstract: A semiconductor device includes: a planarized layer having insulating properties, the planarized layer having a first surface and a second surface opposite the first surface; a plurality of semiconductor elements formed on the first surface of the planarized layer; and a groove provided in the second surface of the planarized layer. The groove is formed in a region outside the plurality of semiconductor elements as viewed in a direction perpendicular to the first surface.

Abstract: An electronic structure includes: a substrate having a first surface; a functional element unit including a functional element having an electronic function, and a protector covering the functional element, the functional element unit having a second surface facing the first surface; a support disposed between the first surface and the second surface, the support supporting the second surface; and a projection disposed on a first surface side of the substrate, the projection projecting toward the functional element unit. The support has a third surface in contact with the second surface of the functional element unit, the third surface having an area smaller than an area of the second surface. The projection has a fourth surface in contact with or close to the functional element unit, the fourth surface having an area smaller than the area of the second surface, the projection being formed by a different material from the support.

Abstract: An electronic structure includes a substrate having a first surface; a functional unit including a functional section that has an electronic function and a protective member that protects the functional section and having a second surface formed on the first surface’s side; and a support layer provided at a position to contact the first surface and having a third surface in contact with the second surface of the functional unit, area of the third surface being smaller than area of the second surface, wherein one of part of the functional unit forming the second surface of the protective member and part of the support layer forming the third surface contains organic material as its principal component and the other contains inorganic material as its principal component.

Abstract: A light emitting device includes: a first layer in which a first light emitting element is disposed; a second layer stacked on the first layer and including a second light emitting element that at least partially overlaps the first light emitting element as viewed in a light emitting direction perpendicular to a light emitting surface of the first light emitting element; and a control substrate on which the first layer is stacked and that controls light emission of the first light emitting element and the second light emitting element. The first layer includes a first surface facing the second layer in the light emitting direction, a second surface facing the control substrate in the light emitting direction, and a first opening formed from the first surface to the second surface. The second light emitting element and the control substrate are electrically connected together through the first opening.

Abstract: A semiconductor element unit includes a semiconductor element; and a first electrode having a flat first electrode mounting surface whose surface roughness is less than or equal to 10 [nm] and forming eutectic bonding with the semiconductor element in a part different from the first electrode mounting surface. A semiconductor element unit supply substrate includes one or more semiconductor element units. A semiconductor packaging circuit includes the semiconductor element unit.

Abstract: A semiconductor device includes a base material and light emitting elements (or LEE) aligned in a first direction on the base material. Among the LEEs, a first LEE is provided with a first semiconductor multilayer structure and a first organic insulating film. Among the LEEs, a second LEE is provided with a second semiconductor multilayer structure and a second organic insulating film. A first multilayer structure width is smaller than a second multilayer structure width that is the first direction width of the second semiconductor multilayer structure, a first multilayer structure thickness is narrower than a second multilayer structure thickness, and a first film thickness is greater than a second film thickness wherein the first film thickness is a thickness of a portion of the first organic insulating film and a second film thickness is a thickness of a portion of the second organic insulating film.