Patents by Inventor Genta Watanabe
Genta Watanabe has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11939977Abstract: A scroll compressor comprising a fixed scroll (15); an orbiting scroll (16) supported in a manner allowing for orbiting motion; a discharge port through which a fluid compressed by the two scrolls (15, 16) is discharged; an end plate step portion (16E) provided on an end plate of the orbiting scroll (16) formed so that a height of the end plate is higher on a center portion side in the direction of a spiral wrap and lower on an outer end side; and a wrap step portion (15E) provided on a wall portion of the fixed scroll (15) that corresponds to the end plate step portion (16E) so that a height of the wall portion is lower on the center portion side of the spiral and higher on the outer end side; wherein the orbiting scroll (16) is treated for surface hardening and the fixed scroll (15) is not treated for surface hardening.Type: GrantFiled: January 27, 2021Date of Patent: March 26, 2024Assignee: MITSUBISHI HEAVY INDUSTRIES THERMAL SYSTEMS, LTD.Inventors: Hajime Sato, Makoto Takeuchi, Genta Yoshikawa, Kazuhide Watanabe, Katsuhiro Fujita, Takayuki Hagita, Takayuki Kuwahara
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Patent number: 11906896Abstract: There is provided a reflective photomask blank and a reflective photomask having good irradiation resistance and capable of obtaining good transfer performance. A reflective photomask blank (10) contains a reflective layer (2) reflecting incident light and an absorption layer (4) absorbing incident light, which are formed in this order on one surface side of a substrate (1). The absorption layer (4) contains a first material selected from the group consisting of tin, indium, and tellurium and a second material containing one or two or more kinds of materials selected from the group consisting of transition metals, bismuth (Bi), and silicon (Si) at least in the outermost layer. The content of the second material is more than 20 at and less than 50 at % in the same laver.Type: GrantFiled: November 1, 2019Date of Patent: February 20, 2024Assignee: TOPPAN PHOTOMASK CO., LTD.Inventors: Toru Komizo, Norihito Fukugami, Genta Watanabe, Eisuke Narita
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Publication number: 20230025357Abstract: A semiconductor device capable of changing a data programming process in a simple manner according to a situation is provided. The semiconductor device includes a plurality of memory cells, a programming circuit for supplying a programming current to the memory cell, and a power supply circuit for supplying power to the programming circuit. The power supply circuit includes a charge pump circuit for boosting the external power supply, a voltage of the external power supply according to the selection indication, and a selectable circuit capable of switching the boosted voltage boosted by the charge pump circuit. The control circuit further includes a control circuit for executing data programming processing by the programming circuit by switching the selection indication.Type: ApplicationFiled: June 23, 2022Publication date: January 26, 2023Inventors: Genta WATANABE, Ken MATSUBARA, Tomoya SAITO, Akihiko KANDA, Koichi TAKEDA, Takahiro SHIMOI
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Publication number: 20220011662Abstract: There is provided a reflective photomask blank and a reflective photomask having good irradiation resistance and capable of obtaining good transfer performance. A reflective photomask blank (10) contains a reflective layer (2) reflecting incident light and an absorption layer (4) absorbing incident light, which are formed in this order on one surface side of a substrate (1). The absorption layer (4) contains a first material selected from the group consisting of tin, indium, and tellurium and a second material containing one or two or more kinds of materials selected from the group consisting of transition metals, bismuth (Bi), and silicon (Si) at least in the outermost layer. The content of the second material is more than 20 at and less than 50 at % in the same laver.Type: ApplicationFiled: November 1, 2019Publication date: January 13, 2022Inventors: Toru KOMIZO, Norihito FUKUGAMI, Genta WATANABE, Eisuke NARITA
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Patent number: 9927692Abstract: A reflective photomask includes: a substrate; a multilayer reflection film formed on the substrate and reflecting exposure light including light with a wavelength of about 5 nm to 15 nm for lithography; an absorption film formed on the multilayer reflection film and absorbing the exposure light, and formed therein with a circuit pattern or a circuit pattern forming region where the circuit pattern is formed; a shading region formed by removing part of the multilayer reflection film and the absorption film on the substrate, on an outer peripheral side of the circuit pattern or the circuit pattern forming region to shade part of the exposure light reflected by the multilayer reflection film; and a plurality of projections formed at a pitch of about 3000 nm or less on part of a surface of the substrate exposed in the shading region, and suppressing reflection of out-of-band light with a wavelength of about 140 nm to 800 nm included in the exposure light and incident on the shading region.Type: GrantFiled: March 1, 2016Date of Patent: March 27, 2018Assignee: TOPPAN PRINTING CO., LTD.Inventors: Genta Watanabe, Tomohiro Imoto, Norihito Fukugami
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Publication number: 20160178997Abstract: A reflective photomask includes: a substrate; a multilayer reflection film formed on the substrate and reflecting exposure light including light with a wavelength of about 5 nm to 15 nm for lithography; an absorption film formed on the multilayer reflection film and absorbing the exposure light, and formed therein with a circuit pattern or a circuit pattern forming region where the circuit pattern is formed; a shading region formed by removing part of the multilayer reflection film and the absorption film on the substrate, on an outer peripheral side of the circuit pattern or the circuit pattern forming region to shade part of the exposure light reflected by the multilayer reflection film; and a plurality of projections formed at a pitch of about 3000 nm or less on part of a surface of the substrate exposed in the shading region, and suppressing reflection of out-of-band light with a wavelength of about 140 nm to 800 nm included in the exposure light and incident on the shading region.Type: ApplicationFiled: March 1, 2016Publication date: June 23, 2016Applicant: Toppan Printing Co., Ltd.Inventors: Genta WATANABE, Tomohiro IMOTO, Norihito FUKUGAMI
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Patent number: 9285672Abstract: A reflective mask having a light-shielding frame with high light-shielding performance, and a method for manufacturing thereof. In a reflective mask having a light-shielding frame dug into a multilayered reflective layer, when side etching is performed or processing to obtain a reverse tapered shape is performed only on the multilayered reflective layer, it becomes possible to suppress reflection of EUV light (extreme ultraviolet light) in the vicinity of the edge of the light-shielding frame, provide a reflective mask having high light-shielding ability, and form a transcription pattern with high accuracy.Type: GrantFiled: February 24, 2014Date of Patent: March 15, 2016Assignee: TOPPAN PRINTING CO., LTD.Inventors: Norihito Fukugami, Yo Sakata, Kazuaki Matsui, Genta Watanabe
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Publication number: 20140170536Abstract: A reflective mask having a light-shielding frame with high light-shielding performance, and a method for manufacturing thereof. In a reflective mask having a light-shielding frame dug into a multilayered reflective layer, when side etching is performed or processing to obtain a reverse tapered shape is performed only on the multilayered reflective layer, it becomes possible to suppress reflection of EUV light (extreme ultraviolet light) in the vicinity of the edge of the light-shielding frame, provide a reflective mask having high light-shielding ability, and form a transcription pattern with high accuracy.Type: ApplicationFiled: February 24, 2014Publication date: June 19, 2014Applicant: TOPPAN PRINTING CO., LTD.Inventors: Norihito Fukugami, Yo Sakata, Kazuaki Matsui, Genta Watanabe
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Patent number: 8508987Abstract: A write disturbance margin of reference cells that generate reference current during read is improved. A bit line forms a clad interconnect structure in the normal cell region where normal cells are disposed, and a partially clad or non-clad interconnect structure in the reference cell region where a reference cell is disposed. Thus, a writing magnetic field intensity applied to the reference cell is smaller than the write magnetic field intensity applied to a normal memory cell during identical write currents.Type: GrantFiled: May 27, 2009Date of Patent: August 13, 2013Assignee: Renesas Electronics CorporationInventors: Takaharu Tsuji, Genta Watanabe
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Publication number: 20120051122Abstract: A write disturbance margin of reference cells that generate reference current during read is improved. A bit line forms a clad interconnect structure in the normal cell region where normal cells are disposed, and a partially clad or non-clad interconnect structure in the reference cell region where a reference cell is disposed. Thus, a writing magnetic field intensity applied to the reference cell is smaller than the write magnetic field intensity applied to a normal memory cell during identical write currents.Type: ApplicationFiled: May 27, 2009Publication date: March 1, 2012Inventors: Takaharu Tsuji, Genta Watanabe