Patents by Inventor George A. N. Connell

George A. N. Connell has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Silicon substrate having an epitaxial superconducting layer thereon and method of making same
    Patent number: 5173474
    Abstract: An HTSC material epitaxially deposited on a YSZ buffer layer on a surface of a monocrystalline silicon substrate has a zero resistance transition temperature of at least 85.degree. K., a transition width (10-90%) of no more than 1.0.degree. K., a resistivity at 300.degree. K. of no more than 300 micro-ohms-centimeter and a resistivity ratio (at 300.degree. K./100.degree. K.) of 3.0.+-.0.2. The surface of the silicon substrate is cleaned using a spin-etch process to produce an atomically clean surface terminated with an atomic layer of an element such as hydrogen with does not react with silicon. The substrate can be moved to a deposition chamber without contamination. The hydrogen is evaporated in the chamber, and then YSZ is epitaxially deposited preferably by laser ablation. Thereafter, the HTSC material, such as YBCO, is epitaxially deposited preferably by laser ablation. The structure is then cooled in an atmosphere of oxygen.
    Type: Grant
    Filed: March 11, 1991
    Date of Patent: December 22, 1992
    Assignees: Xerox Corporation, President and Board of Trustees of Santa Clara College, Board of Trustees of the Leland Stanford Junior University
    Inventors: George A. N. Connell, David B. Fenner, James B. Boyce, David K. Fork