Abstract: A self timed memory chip having an apportionable data bus. Access timing to an array on the memory chip is dynamically determined by circuitry on the memory chip. A ring oscillator on the memory chip has a frequency that is indicative of how fast an array on the memory chip can be accessed. The ring oscillator includes a bit line that is periodically charged and a memory element that subsequently discharges the bit line. The memory chip has a data bus interface having a number of bits. The data bus interface has a first number of bits apportioned to write data and a second number of bits apportioned to read data. The first number of bits and the second number of bits is programmable.

Abstract: A memory system having a data bus coupling a memory controller and a memory. The data bus has a number of data bus bits. The data bus is programmably apportioned to a first portion dedicated to transmitting data from the memory controller to the memory and a second portion dedicated to transmitting data from the memory to the memory controller. The apportionment can be assigned by suitable connection of pins on a memory chip in the memory and the memory controller to logical values. Alternatively, the apportionment can be scanned into the memory controller and the memory at bring up time. In another alternative, the apportionment can be changed by suspending data transfer and dynamically changing the sizes of the first portion and the second portion.

Abstract: A memory system having a memory controller and a memory. The memory comprises one or more daisy chains of self timed memory chips. An address/command word is chained through a daisy chain of memory chips and is handled by one of the memory chips in the daisy chain of memory chips. Data to be written to a memory chip is sent as part of the address/command word, or is transferred on an outgoing data bus chain. Data read from a memory chip is transferred on an incoming data bus chain. Access timing on a memory chip is determined by a self time block on the memory chip.

Abstract: A memory controller for controlling a daisy chain of self timed memory chips. The memory controller has information as to how long each self timed memory chip in the daisy chain of memory chips takes to make a read access and a write access to an array on the self timed memory chip. The memory controller determines current access time information on a memory chip by sending a command to the memory chip. The memory chip returns a data word containing the current access time information. Alternatively, the memory controller transmits an address/command word to the memory chip and, after completing an access, transmits a responsive data word to the memory controller. The memory controller determines the access time information using the interval from transmission of the address/command word to reception of the responsive data word.

Abstract: A computer system having a memory system having a memory controller and a memory. The memory controller is coupled to a processor and to the memory. The memory comprises one or more daisy chains of memory chips. An address/command word is chained through a daisy chain of memory chips and is handled by one of the memory chips in the daisy chain of memory chips. Data to be written to a memory chip is sent as part of the address/command word, or is transferred on an outgoing data bus chain. Data read from a memory chip is transferred on an incoming data bus chain. A daisy chain of memory chips can include memory chips on multiple carriers, or the daisy chain of memory chips can all be attached to a single carrier.

Abstract: A carrier having at least one memory chip in a daisy chain of memory chips. A first carrier has at least a portion of an entire daisy chain of memory chips attached to the first carrier. An address/command bus input on the first carrier carries an address/command word to a first memory chip in the daisy chain of memory chips. If the first memory chip determines that the address/command word is not directed to the first memory chip, the first memory chip re-drives the address/command word to a second memory chip in the daisy chain of memory chips using a point to point address/command bus link. If there are no more memory chips on the first carrier, the address/command word is re-driven to a memory chip on a second carrier.

Abstract: A memory controller configured to control a daisy chain of memory chips. The memory controller receives read and write requests from a processor, determines a daisy chain of memory chips that the request is directed to, determines which memory chip in the chain of memory chips the request is directed to, and transmits an address/command word recognizable by the correct memory chip. The memory controller sends write data words to the daisy chain of memory chips that can be associated by the correct memory chip for writing into the correct memory chip. The memory controller receives read data words from the daisy chain of memory chips and returns the read data to the processor. The memory controller transmits a bus clock to the daisy chain of memory chips for controlling transmission of address/command words and data words.

Abstract: A method, structures and computer program product are provided for implementing enhanced wiring capability for electronic laminate packages. Electronic package physical design data are received. Instances of line width and space limit violations in the electronic package physical design data are identified. The identified instances of line width and space limit violations are evaluated using predefined qualified options and tolerance limitations and the electronic package physical design data are modified to optimize shapes to replace the instances of line width and space limit violations.

Abstract: A method and structure are provided for implementing enhanced cooling of a plurality of memory devices. The memory structure includes a stack of platters. A sub-plurality of memory devices is mounted on each platter. At least one connector is provided with each platter for connecting to the sub-plurality of memory devices. A heat sink is associated with the stack of platters for cooling the plurality of memory devices.

Abstract: A circuit arrangement, method and apparatus utilize communication links that are selectively configurable to operate in both unidirectional and bidirectional modes to communicate data between multiple nodes that are interconnected to one another in a daisy chain configuration. As a result, in many instances communications may be maintained with nodes located both before and after a discontinuity in a daisy chain configuration.

Abstract: A method of testing and an embedded probe-enabling socket are provided for implementing debug and testing functions. The socket includes an integral probe structure enabling Top Side of the Module (TSM) signal probing. The socket includes a substrate with a topside including a plurality of probe pads. A TSM socket frame includes a plurality of probe pins electrically connecting to respective probe pads on the substrate topside. The probe pins are electrically connected with a respective signal to be monitored.

Abstract: A method and structure are provided to control common mode impedance in fan-out regions for printed circuit board applications. A differential pair transmission line includes a narrow signal trace portion in the fan-out region and a wider signal trace portion outside of the fan-out region. A dielectric material separates the differential pair transmission line from a reference power plane. A thickness of the narrow signal trace is increased and a thickness of the dielectric material is correspondingly decreased in the fan-out region.

Abstract: A method and stiffener-embedded waveguide structure are provided for implementing enhanced data transfer for printed circuit board applications. At least one microwave channel is defined within a stiffener. The microwave channel provides a high frequency path for data transfers. Use of the waveguide channel in the stiffener for data transfers can replace or supplement otherwise required transmission paths in an associated printed circuit board.

Abstract: A socket assembly with incorporated memory structure is provided. A chip carrier socket assembly includes dual stage clamping actuation. A first clamping actuation stage provides clamping force for ball grid array (BGA) contact pads and a second clamping actuation stage provides clamping force for a thermal interface. The first clamping actuation stage provides clamping force proximate to a perimeter of a carrier where a plurality of BGA contact pads are located. The second clamping actuation stage provides clamping force generally centrally of the chip carrier socket assembly for thermal interface actuation.

Abstract: A method, apparatus, and computer program product are provided for creating customized mesh planes in electronic packages. Electronic package physical design data is received and signal traces in each adjacent plane to a mesh plane are compared with the mesh layout. Signal traces adjacent to mesh holes are identified. One or more fill methods are selected to modify the mesh layout to replace selected mesh holes with added mesh structure aligned with the identified signal traces.

Abstract: Methods and apparatus are provided for implementing silicon wafer chip carrier passive devices including customized silicon capacitors and resistors mounted directly on a module or carrier package. A plurality of system design inputs is received for a package arrangement. A respective physical design is generated for customized passive devices, a logic chip, and a chip carrier. Silicon devices are fabricated utilizing the generated respective physical design for customized passive devices and the logic chip and a carrier package is fabricated. The fabricated silicon devices are assembled on the carrier package.

Abstract: A method and structure are provided for implementing a column attach coupled noise suppressor for a solder column structure of the type used to join a substrate to a circuit card. The electrical noise suppressor structure includes a plurality of elongated through openings that are arranged in a predefined pattern. The elongated through openings have electrically conductive sidewalls and are electrically connected together. The predefined pattern of the elongated, electrically conductive through openings corresponds to a layout of solder columns. The solder columns are attached at one end to either a substrate or a circuit card and are inserted through the elongated through openings of the electrical noise suppressor structure, spaced apart from the electrically conductive sidewalls. Then the solder columns are attached at the other end to the other one of the substrate or circuit card.

Abstract: A method and structures are provided for implementing an impedance-controlled coupled noise suppressor for a differential interface solder column array used to join a substrate to a circuit card. The impedance-controlled coupled noise suppressor structure includes a plurality of elongated through openings that are arranged in a predefined pattern with one or more of the through openings receiving a differential signal pair of solder columns. The elongated through openings have electrically conductive sidewalls and are electrically connected together. The predefined pattern of the elongated, electrically conductive through openings corresponds to a layout of solder columns. The solder columns are attached at opposite ends to a substrate and a circuit card. An electrical connection is provided between the impedance-controlled coupled noise suppressor structure and an image return current path of the circuit card.

Abstract: A method and structure are provided to control common mode impedance in fan-out regions for printed circuit board applications. A differential pair transmission line includes a narrow signal trace portion in the fan-out region and a wider signal trace portion outside of the fan-out region. A dielectric material separates the differential pair transmission line from a reference power plane. A thickness of the narrow signal trace is increased and a thickness of the dielectric material is correspondingly decreased in the fan-out region.

Abstract: A method and apparatus are provided for implementing direct attenuation loss measurement in an electronic package. A sinusoidal voltage source signal of a selected frequency is coupled to an embedded transmission line test structure in the electronic package. Receive circuitry is coupled to the transmission line test structure for detecting amplitude of a received sinusoidal voltage source signal to identify attenuation loss through the transmission line test structure. An identified attenuation loss of the transmission line test structure is compared with a threshold value for verifying acceptable attenuation of the electronic package transmission line test structure.