Patents by Inventor Gerald L. Leake

Gerald L. Leake has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20200166703
    Abstract: There is set forth herein a method including a substrate; a dielectric stack disposed on the substrate; one or more photonics device integrated in the dielectric stack; and a laser light source having a laser stack including a plurality of structures arranged in a stack, wherein structures of the plurality of structures are integrated in the dielectric stack, wherein the laser stack includes an active region configured to emit light in response to the application of electrical energy to the laser stack.
    Type: Application
    Filed: September 19, 2019
    Publication date: May 28, 2020
    Inventors: William CHARLES, John BOWERS, Douglas COOLBAUGH, Daehwan JUNG, Jonathan KLAMKIN, Douglas La Tulipe, Gerald L. LEAKE, JR., Songtao LIU, Justin NORMAN
  • Publication number: 20200166720
    Abstract: There is set forth herein a method including building a first photonics structure using a first wafer having a first substrate, wherein the building the first photonics structure includes integrally fabricating within a first photonics dielectric stack one or more photonics device, the one or more photonics device formed on the first substrate; building a second photonics structure using a second wafer having a second substrate, wherein the building the second photonics structure includes integrally fabricating within a second photonics dielectric stack a laser stack structure active region and one or more photonics device, the second photonics dielectric stack formed on the second substrate; and bonding the first photonics structure and the second photonics structure to define an optoelectrical system having the first photonics structure bonded the second photonics structure.
    Type: Application
    Filed: September 19, 2019
    Publication date: May 28, 2020
    Inventors: William CHARLES, Douglas COOLBAUGH, Douglas La Tulipe, Gerald L. LEAKE, JR.
  • Publication number: 20200158954
    Abstract: A photonic structure can include in one aspect one or more waveguides formed by patterning of waveguiding material adapted to propagate light energy. Such waveguiding material may include one or more of silicon (single-, poly-, or non-crystalline) and silicon nitride.
    Type: Application
    Filed: December 17, 2019
    Publication date: May 21, 2020
    Inventors: Douglas Coolbaugh, Thomas Adam, Gerald L. Leake
  • Patent number: 10571631
    Abstract: A photonic structure can include in one aspect one or more waveguides formed by patterning of waveguiding material adapted to propagate light energy. Such waveguiding material may include one or more of silicon (single-, poly-, or non-crystalline) and silicon nitride.
    Type: Grant
    Filed: January 4, 2016
    Date of Patent: February 25, 2020
    Assignee: THE RESEARCH FOUNDATION FOR THE STATE UNIVERSITY OF NEW YORK
    Inventors: Douglas Coolbaugh, Thomas Adam, Gerald L. Leake
  • Publication number: 20200026003
    Abstract: A photonic structure can include in one aspect one or more waveguides formed by patterning of waveguiding material adapted to propagate light energy. Such waveguiding material may include one or more of silicon (single-, poly-, or non-crystalline) and silicon nitride.
    Type: Application
    Filed: April 26, 2019
    Publication date: January 23, 2020
    Inventors: Douglas Coolbaugh, Thomas Adam, Gerald L. Leake
  • Publication number: 20190310417
    Abstract: There is set forth herein a method including depositing a layer formed of barrier material over a conductive material formation of a photonics structure; and removing material of the layer in a light signal transmitting region of the photonics structure. In one embodiment the barrier material can include silicon carbon nitride. In one embodiment the barrier material can include silicon nitride.
    Type: Application
    Filed: April 2, 2019
    Publication date: October 10, 2019
    Inventors: Douglas COOLBAUGH, Gerald L. LEAKE, JR.
  • Patent number: 10295745
    Abstract: A photonic structure can include in one aspect one or more waveguides formed by patterning of waveguiding material adapted to propagate light energy. Such waveguiding material may include one or more of silicon (single-, poly-, or non-crystalline) and silicon nitride.
    Type: Grant
    Filed: January 8, 2018
    Date of Patent: May 21, 2019
    Assignee: The Research Foundation for The State University of New York
    Inventors: Douglas Coolbaugh, Thomas Adam, Gerald L. Leake
  • Publication number: 20190025513
    Abstract: A photonic structure can include in one aspect one or more waveguides formed by patterning of waveguiding material adapted to propagate light energy. Such waveguiding material may include one or more of silicon (single-, poly-, or non-crystalline) and silicon nitride.
    Type: Application
    Filed: January 8, 2018
    Publication date: January 24, 2019
    Inventors: Douglas Coolbaugh, Thomas Adam, Gerald L. Leake
  • Patent number: 9864138
    Abstract: A photonic structure can include in one aspect one or more waveguides formed by patterning of waveguiding material adapted to propagate light energy. Such waveguiding material may include one or more of silicon (single-, poly-, or non-crystalline) and silicon nitride.
    Type: Grant
    Filed: January 4, 2016
    Date of Patent: January 9, 2018
    Assignee: The Research Foundation for the State University of New York
    Inventors: Douglas Coolbaugh, Thomas Adam, Gerald L. Leake
  • Publication number: 20160223749
    Abstract: A photonic structure can include in one aspect one or more waveguides formed by patterning of waveguiding material adapted to propagate light energy. Such waveguiding material may include one or more of silicon (single-, poly-, or non-crystalline) and silicon nitride.
    Type: Application
    Filed: January 4, 2016
    Publication date: August 4, 2016
    Inventors: Douglas Coolbaugh, Thomas Adam, Gerald L. Leake
  • Publication number: 20160197111
    Abstract: A photonic structure can include in one aspect one or more waveguides formed by patterning of waveguiding material adapted to propagate light energy. Such waveguiding material may include one or more of silicon (single-, poly-, or non-crystalline) and silicon nitride.
    Type: Application
    Filed: January 4, 2016
    Publication date: July 7, 2016
    Inventors: Douglas Coolbaugh, Thomas Adam, Gerald L. Leake
  • Patent number: 8492286
    Abstract: Embodiment of the present invention provides a method of forming electronic fuse or commonly known as e-fuse. The method includes forming a polysilicon structure and a field-effect-transistor (FET) structure together on top of a common semiconductor substrate, the FET structure having a sacrificial gate electrode; implanting at least one dopant into the polysilicon structure to create a doped polysilicon layer in at least a top portion of the polysilicon structure; subjecting the polysilicon structure and the FET structure to a reactive-ion-etching (RIE) process, the RIE process selectively removing the sacrificial gate electrode of the FET structure while the doped polysilicon layer being substantially unaffected by the RIE process; and converting the polysilicon structure including the doped polysilicon layer into a silicide to form the electronic fuse.
    Type: Grant
    Filed: November 22, 2010
    Date of Patent: July 23, 2013
    Assignee: International Business Machines Corporation
    Inventors: Henry K. Utomo, Ying Li, Gerald L. Leake
  • Publication number: 20120129312
    Abstract: Embodiment of the present invention provides a method of forming electronic fuse or commonly known as e-fuse. The method includes forming a polysilicon structure and a field-effect-transistor (FET) structure together on top of a common semiconductor substrate, the FET structure having a sacrificial gate electrode; implanting at least one dopant into the polysilicon structure to create a doped polysilicon layer in at least a top portion of the polysilicon structure; subjecting the polysilicon structure and the FET structure to a reactive-ion-etching (RIE) process, the RIE process selectively removing the sacrificial gate electrode of the FET structure while the doped polysilicon layer being substantially unaffected by the RIE process; and converting the polysilicon structure including the doped polysilicon layer into a silicide to form the electronic fuse.
    Type: Application
    Filed: November 22, 2010
    Publication date: May 24, 2012
    Applicant: International Business Machines Corporation
    Inventors: Henry K. Utomo, Ying Li, Gerald L. Leake