Patents by Inventor Gerald Yin
Gerald Yin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Patent number: 9947562Abstract: A processing apparatus for semiconductor work pieces and related methodology is disclosed and which includes a processing chamber having an internal cavity, and which has a plurality of rotatable processing stations positioned therein and wherein the rotatable processing stations each process a semiconductor work piece.Type: GrantFiled: January 28, 2011Date of Patent: April 17, 2018Assignees: APPLIED MATERIALS, INC., ADVANCED MICRO-FABRICATION EQUIPMENT, INC. ASIAInventors: AiHua Chen, Ryoji Todaka, Gerald Yin
-
Patent number: 9208998Abstract: A tandem processing-zones chamber having plasma isolation and frequency isolation is provided. At least two RF frequencies are fed from the cathode for each processing zones, where one frequency is about ten times higher than the other, so as to provide decoupled reactive ion etch capability. The chamber body is ground all around and in-between the two processing zones. The use of frequency isolation enables feed of multiple RF frequencies from the cathode, without having crosstalk and beat. A plasma confinement ring is also used to prevent plasma crosstalk. A grounded common evacuation path is connected to a single vacuum pump.Type: GrantFiled: September 14, 2012Date of Patent: December 8, 2015Assignee: ADVANCED MICRO-FABRICATION EQUIPMENT INC, SHANGHAIInventors: Gerald Yin, Tuqiang Ni, Jinyuan Chen, Xueyu Qian
-
Patent number: 8366829Abstract: A tandem processing-zones chamber having plasma isolation and frequency isolation is provided. At least two RF frequencies are fed from the cathode for each processing zones, where one frequency is about ten times higher than the other, so as to provide decoupled reactive ion etch capability. The chamber body is ground all around and in-between the two processing zones. The use of frequency isolation enables feed of multiple RF frequencies from the cathode, without having crosstalk and beat. A plasma confinement ring is also used to prevent plasma crosstalk. A grounded common evacuation path is connected to a single vacuum pump.Type: GrantFiled: July 2, 2007Date of Patent: February 5, 2013Assignee: Advanced Micro-Fabrication Equipment, Inc. AsiaInventors: Gerald Yin, Tuqiang Ni, Jinyuan Chen, Xueyu Qian
-
Publication number: 20130008605Abstract: A tandem processing-zones chamber having plasma isolation and frequency isolation is provided. At least two RF frequencies are fed from the cathode for each processing zones, where one frequency is about ten times higher than the other, so as to provide decoupled reactive ion etch capability. The chamber body is ground all around and in-between the two processing zones. The use of frequency isolation enables feed of multiple RF frequencies from the cathode, without having crosstalk and beat. A plasma confinement ring is also used to prevent plasma crosstalk. A grounded common evacuation path is connected to a single vacuum pump.Type: ApplicationFiled: September 14, 2012Publication date: January 10, 2013Inventors: Gerald Yin, Tuqiang Ni, Jinyuan Chen, Xueyu Qian
-
Patent number: 8336488Abstract: A plasma chamber is constructed to have a chamber body defining therein a plurality of process stations. A plurality of rotating substrate holders are each situated in one of the process stations and a plurality of in-situ plasma generation regions are each provided above one of the substrate holders. A plurality of quasi-remote plasma generation regions are each provided above a corresponding in-situ plasma generation region and being in gaseous communication with the corresponding in-situ plasma generation region. An RF energy source is coupled to each of the quasi-remote plasma generation regions.Type: GrantFiled: December 20, 2007Date of Patent: December 25, 2012Assignee: Advanced Micro-Fabrication Equipment, Inc. AsiaInventors: Aihua Chen, Yijun Liu, Jinyuan Chen, Lee Luo, Tuqiang Ni, Gerald Yin, Henry Ho
-
Patent number: 8297225Abstract: A decoupled capacitive CVD reactor is described, which provides improved CVD capabilities, including processing at lower temperatures, performing alternating deposition and etching steps, and performing in situ cleaning of the chamber, without the need for a remote plasma source. Two RF frequencies are coupled to the susceptor, while the anode is grounded. The high frequency RF source is operated so as to control the plasma density, while the low frequency RF source is operated to control species bombardment on the substrate, so as to control the properties of the film being deposited. Additionally, both RF sources may be controlled, together with selection of gasses supplied to the chamber, to operate the chamber either in deposition mode, partial etch mode, etching mode, or cleaning mode.Type: GrantFiled: July 6, 2009Date of Patent: October 30, 2012Assignee: Advanced Micro-Fabrication Equipment, Inc. AsiaInventors: Gerald Yin, Jinyuan Chen, Tuqiang Ni
-
Publication number: 20110305544Abstract: A processing apparatus for semiconductor work pieces and related methodology is disclosed and which includes a processing chamber having an internal cavity, and which has a plurality of rotatable processing stations positioned therein and wherein the rotatable processing stations each process a semiconductor work piece.Type: ApplicationFiled: January 28, 2011Publication date: December 15, 2011Inventors: AiHua Chen, Ryoji Todaka, Gerald Yin
-
Publication number: 20110030900Abstract: A plasma chamber having a switchable bias frequency superimposed onto plasma source frequency and applied to the cathode. A power supplier capable of generating multiple RF bias frequencies is coupled into a match network through a switch. The match network couples one of the bias frequencies to the cathode. Another match network applied a source RF power to the cathode. One parallel connection of variable shunt capacitor and fixed capacitor are provided between ground and input of the switch and another is connected between ground and the input of the source RF match network.Type: ApplicationFiled: August 5, 2010Publication date: February 10, 2011Inventors: Jinyuan CHEN, Gerald Yin
-
Publication number: 20100271745Abstract: An electrostatic chuck device in which the electrostatic chuck and support are made from high resistivity, high thermal conductivity and low RF energy loss dielectric materials is described. An advantage of this electrostatic chuck device is that the wafer surface electromagnetic field distribution is more uniform than conventional electrostatic chuck devices. As a result, the wafer etch rate, especially the wafer edge etch rate non-uniformity, is significantly improved compared with conventional electrostatic chuck devices.Type: ApplicationFiled: July 14, 2009Publication date: October 28, 2010Applicant: ADVANCED MICRO-FABRICATION EQUIPMENT, INC. ASIAInventors: Jinyuan CHEN, Liang Ouyang, Junichi Arami, Xueyu Qian, Zhiyou Du, Gerald Yin
-
Publication number: 20100126667Abstract: A decoupled capacitive CVD reactor is described, which provides improved CVD capabilities, including processing at lower temperatures, performing alternating deposition and etching steps, and performing in situ cleaning of the chamber, without the need for a remote plasma source. Two RF frequencies are coupled to the susceptor, while the anode is grounded. The high frequency RF source is operated so as to control the plasma density, while the low frequency RF source is operated to control species bombardment on the substrate, so as to control the properties of the film being deposited. Additionally, both RF sources may be controlled, together with selection of gasses supplied to the chamber, to operate the chamber either in deposition mode, partial etch mode, etching mode, or cleaning mode.Type: ApplicationFiled: July 6, 2009Publication date: May 27, 2010Applicant: ADVANCED MICRO-FABRICATION EQUIPMENT, INC. ASIAInventors: Gerald Yin, Jinyuan Chen, Tuqiang Ni
-
Patent number: 7658800Abstract: A semiconductor work piece processing reactor is described and which includes a processing chamber defining a deposition region; a pedestal which supports and moves a semiconductor work piece to be processed within the deposition region of the processing chamber; and a gas distribution assembly mounted within the processing chamber and which defines first and second reactive gas passageways which are separated from each other, and which deliver two reactant gases to a semiconductor work piece which is positioned near the gas distribution assembly.Type: GrantFiled: November 20, 2006Date of Patent: February 9, 2010Assignee: Advanced Micro-Fabrication Equipment, Inc. AsiaInventors: AiHua Chen, Shulin Wang, Henry Ho, Gerald Yin, Qing Lv, Li Fu
-
Publication number: 20090139453Abstract: A plasma chamber is constructed to have a chamber body defining therein a plurality of process stations. A plurality of rotating substrate holders are each situated in one of the process stations and a plurality of in-situ plasma generation regions are each provided above one of the substrate holders. A plurality of quasi-remote plasma generation regions are each provided above a corresponding in-situ plasma generation region and being in gaseous communication with the corresponding in-situ plasma generation region. An RF energy source is coupled to each of the quasi-remote plasma generation regions.Type: ApplicationFiled: December 20, 2007Publication date: June 4, 2009Inventors: AIHUA CHEN, Yijun Liu, Jinyuan Chen, Lee Luo, Tuqiang Ni, Gerald Yin, Henry Ho
-
Patent number: 7503996Abstract: An RF power supplier is provided, that enables multiple-frequency RF power. The system uses N RF signal generators, combines the RF signals, amplify the combined signals, and then separates the amplified signal. The output of the system is then a multiple-frequency RF power. Optionally, the frequencies are switchable, so that one may select which frequencies the system outputs.Type: GrantFiled: April 25, 2007Date of Patent: March 17, 2009Assignee: Advanced Micro-Fabrication Equipment, Inc. AsiaInventors: Jinyuan Chen, Gerald Yin, Xueyu Qian, Tuqiang Ni, Hiroshi Iizuka
-
Publication number: 20080251207Abstract: An RF power supplier is provided, that enables multiple-frequency RF power. The system uses N RF signal generators, combines the RF signals, amplify the combined signals, and then separates the amplified signal. The output of the system is then a multiple-frequency RF power. Optionally, the frequencies are switchable, so that one may select which frequencies the system outputs.Type: ApplicationFiled: April 25, 2007Publication date: October 16, 2008Applicant: ADVANCED MICRO-FABRICATION EQUIPMENT, INC. ASIA,Inventors: Jinyuan Chen, Gerald Yin, Xueyu Qian, Tuqiang Ni, Hiroshi Iizuka
-
Publication number: 20080092815Abstract: A semiconductor work piece processing reactor is described and which includes a processing chamber defining a deposition region; a pedestal which supports and moves a semiconductor work piece to be processed within the deposition region of the processing chamber; and a gas distribution assembly mounted within the processing chamber and which defines first and second reactive gas passageways which are separated from each other, and which deliver two reactant gases to a semiconductor work piece which is positioned near the gas distribution assembly.Type: ApplicationFiled: November 20, 2006Publication date: April 24, 2008Inventors: AiHua Chen, Shulin Wang, Henry Ho, Gerald Yin, Qing Lv, Li Fu
-
Publication number: 20080011424Abstract: A tandem processing-zones chamber having plasma isolation and frequency isolation is provided. At least two RF frequencies are fed from the cathode for each processing zones, where one frequency is about ten times higher than the other, so as to provide decoupled reactive ion etch capability. The chamber body is ground all around and in-between the two processing zones. The use of frequency isolation enables feed of multiple RF frequencies from the cathode, without having crosstalk and beat. A plasma confinement ring is also used to prevent plasma crosstalk. A grounded common evacuation path is connected to a single vacuum pump.Type: ApplicationFiled: July 2, 2007Publication date: January 17, 2008Applicant: Advanced Micro-Fabrication Equipment, Inc. AsiaInventors: Gerald YIN, Tuqiang Ni, Jinyuan Chen, Xueyu Qian
-
Patent number: 7227244Abstract: A method of depositing and etching dielectric layers having low dielectric constants and etch rates that vary by at least 3:1 for formation of horizontal interconnects. The amount of carbon or hydrogen in the dielectric layer is varied by changes in deposition conditions to provide low k dielectric layers that can replace etch stop layers or conventional dielectric layers in damascene applications. A dual damascene structure having two or more dielectric layers with dielectric constants lower than about 4 can be deposited in a single reactor and then etched to form vertical and horizontal interconnects by varying the concentration of a carbon:oxygen gas such as carbon monoxide. The etch gases for forming vertical interconnects preferably comprises CO and a fluorocarbon, and CO is preferably excluded from etch gases for forming horizontal interconnects.Type: GrantFiled: August 24, 2004Date of Patent: June 5, 2007Assignee: Applied Materials, Inc.Inventors: Claes H. Bjorkman, Melissa Min Yu, Hongquing Shan, David W. Cheung, Wai-Fan Yau, Kuowei Liu, Nasreen Gazala Chapra, Gerald Yin, Farhad K. Moghadam, Judy H. Huang, Dennis Yost, Betty Tang, Yunsang Kim
-
Publication number: 20070032097Abstract: A processing apparatus for semiconductor work pieces and related methodology is disclosed and which includes a processing chamber having an internal cavity, and which has a plurality of rotatable processing stations positioned therein and wherein the rotatable processing stations each process a semiconductor work piece.Type: ApplicationFiled: May 24, 2006Publication date: February 8, 2007Inventors: AiHua Chen, Ryoji Todaka, Gerald Yin
-
Patent number: 6858153Abstract: A method of depositing and etching dielectric layers having low dielectric constants and etch rates that vary by at least 3:1 for formation of horizontal interconnects. The amount of carbon or hydrogen in the dielectric layer is varied by changes in deposition conditions to provide low k dielectric layers that can replace etch stop layers or conventional dielectric layers in damascene applications. A dual damascene structure having two or more dielectric layers with dielectric constants lower than about 4 can be deposited in a single reactor and then etched to form vertical and horizontal interconnects by varying the concentration of a carbon:oxygen gas such as carbon monoxide. The etch gases for forming vertical interconnects preferably comprises CO and a fluorocarbon, and CO is preferably excluded from etch gases for forming horizontal interconnects.Type: GrantFiled: November 5, 2001Date of Patent: February 22, 2005Assignee: Applied Materials Inc.Inventors: Claes H. Bjorkman, Min Melissa Yu, Hongquing Shan, David W. Cheung, Wai-Fan Yau, Kuowei Liu, Nasreen Gazala Chapra, Gerald Yin, Farhad K. Moghadam, Judy H. Huang, Dennis Yost, Betty Tang, Yunsang Kim
-
Publication number: 20050023694Abstract: A method of depositing and etching dielectric layers having low dielectric constants and etch rates that vary by at least 3:1 for formation of horizontal interconnects. The amount of carbon or hydrogen in the dielectric layer is varied by changes in deposition conditions to provide low k dielectric layers that can replace etch stop layers or conventional dielectric layers in damascene applications. A dual damascene structure having two or more dielectric layers with dielectric constants lower than about 4 can be deposited in a single reactor and then etched to form vertical and horizontal interconnects by varying the concentration of a carbon:oxygen gas such as carbon monoxide. The etch gases for forming vertical interconnects preferably comprises CO and a fluorocarbon, and CO is preferably excluded from etch gases for forming horizontal interconnects.Type: ApplicationFiled: August 24, 2004Publication date: February 3, 2005Inventors: Claes Bjorkman, Melissa Yu, Hongqing Shan, David Cheung, Wai-Fan Yau, Kuowei Liu, Nasreen Chapra, Gerald Yin, Farhad Moghadam, Judy Huang, Dennis Yost, Betty Tang, Yunsang Kim