Abstract: The present invention relates to a system comprising an electronic apparatus which comprises: —an electronic device comprising: —a gate electrode (G, BE); —a dielectric (D) arranged over the gate electrode (G, BE); and —a charge sensing structure (CE) with a 2-dimensional charge sensing layer to provide a gate capacitance (Cg) between the charge sensing structure (CE) and the gate electrode structure (G, BE) and a quantum capacitance (Cq) resulting in a total capacitance (Ctot); —a voltage detector to detect an output voltage (Vo) stored in the total capacitance (Ctot). The system further comprises means to apply a gate voltage (Vg) to the gate electrode structure (G, BE) selected to: —make the device operate around most sensitive point of fermi level of the charge sensing structure (CE); and —tune the quantum capacitance (Cq). The present invention also relates to an electronic apparatus adapted to allow the tuning of its quantum capacitance.

Abstract: The present invention relates to an electronic device, comprising: —a GFET; —noise suppression means comprising: —a modulation unit applying to a gate (G) of the GFET a signal Vg with frequency fm to modulate charge carrier density of a graphene channel around the charge neutrality point between charge carrier density values at frequency fm, —a control unit (CU), and—a demodulation circuit which is CMOS-implemented and that: —comprises first and second circuital branches alternately switchable to demodulate an electrical signal of frequency fm; or—is configured to generate and apply a signal Vb with frequency fmb to a source (S) of the GFET continuously, simultaneously and with a delay td to induce a phase with respect to Vg to yield a maximal demodulated output signal (So). The present invention also concerns to a method for suppressing noise for the device of the invention.

Abstract: The present invention relates to an optoelectronic apparatus, comprising: —an optoelectronic device comprising: —a transport structure (T) comprising a 2-dimensional layer; —a photosensitizing structure (P) to absorb incident light and induce changes in the electrical conductivity of the transport structure (T); and—drain (D) and source (S) electrodes electrically connected to the transport structure (T); —a read-out unit to read an electrical signal, generated at a transport channel of the transport structure (T), after an integration time interval tint has passed, and during a taccess that is at least 10 times shorter than tint, wherein tint is longer than a predetermined trapping time ?tr. The present invention also relates to a reading-out method, comprising performing the operations of the read-out unit of the apparatus of the invention, and to the use of the apparatus as a light detector or as an image sensor.

Abstract: An optoelectronic apparatus, such as a photodetector apparatus comprising a substrate (1), a dielectric layer (2), a transport layer, and a photosensitizing layer (5). The transport layer comprises at least a 2-dimensional semiconductor 5 layer (3), and the photosensitizing layer (5) comprises colloidal quantum dots. Enhanced responsivity and extended spectral coverage are achieved with the disclosed structures.

Abstract: An optoelectronic apparatus, such as a photodetector apparatus comprising a substrate (1), a dielectric layer (2), a transport layer, and a photosensitizing layer (5). The transport layer comprises at least a 2-dimensional semiconductor layer (3), such as MoS2, and the photosensitizing layer (5) comprises colloidal quantum dots. Enhanced responsivity and extended spectral coverage are achieved with the disclosed structures.

Abstract: The present invention relates to a method for producing a 3D object and to a system adapted to implement the method, wherein the method comprises: —providing a powder material (G); —providing a radiation absorbent material, in the form of optically resonant particles (P), on a region to be sintered of the powder material; and—sintering the region to be sintered of the powder material (G), by exposing to light the optically resonant particles (P) to radiation. The method comprises providing the optically resonant particles (P) according to a distribution and proportion, with respect to the powder material (G) included in the region to be sintered, selected: —to disperse the optically resonant particles (P) within the powder material (G) included in said region, and—to avoid substantial agglomeration and substantial self-sintering of the optically resonant particles (P).

Abstract: The present invention relates to a method for obtaining an n-type doped metal chalcogenide quantum dot solid-state element with optical gain for low-threshold, band-edge amplified spontaneous emission (ASE), comprising: —forming a metal chalcogenide quantum dot solid-state element, and —carrying out an n-doping process on its metal chalcogenide quantum dots to at least partially bleach its band-edge absorption, which comprises: —a partial substitution of chalcogen atoms by halogen atoms, in the metal chalcogenide quantum dots, and/or —a partial aliovalent-cation substitution of bivalent metal cations by trivalent cations, in the metal chalcogenide quantum dots; and —providing a substance on the metal chalcogenide quantum dots, to avoid oxygen p-doping. The present invention also relates to the obtained n-type doped metal chalcogenide quantum dot solid-state element, a method for obtaining a light emitter with that n-type doped metal chalcogenide quantum dot solid-state element, and the obtained light emitter.

Abstract: The present invention relates to a system comprising an electronic apparatus which comprises:—an electronic device comprising:—a gate electrode (G, BE);—a dielectric (D) arranged over the gate electrode (G, BE); and—a charge sensing structure (CE) with a 2-dimensional charge sensing layer to provide a gate capacitance (Cg) between the charge sensing structure (CE) and the gate electrode structure (G, BE) and a quantum capacitance (Cq) resulting in a total capacitance (Ctot);—a voltage detector to detect an output voltage (Vo) stored in the total capacitance (Ctot). The system further comprises means to apply a gate voltage (Vg) to the gate electrode structure (G, BE) selected to:—make the device operate around most sensitive point of fermi level of the charge sensing structure (CE); and—tune the quantum capacitance (Cq). The present invention also relates to an electronic apparatus adapted to allow the tuning of its quantum capacitance.

Abstract: The present invention relates to an electronic device, comprising: —a GFET; —noise suppression means comprising: —a modulation unit applying to a gate (G) of the GFET a signal Vg with frequency fm to modulate charge carrier density of a graphene channel around the charge neutrality point between charge carrier density values at frequency fm, —a control unit (CU), and —a demodulation circuit which is CMOS-implemented and that: —comprises first and second circuital branches alternately switchable to demodulate an electrical signal of frequency fm; or —is configured to generate and apply a signal Vb with frequency fmb to a source (S) of the GFET continuously, simultaneously and with a delay td to induce a phase with respect to Vg to yield a maximal demodulated output signal (So). The present invention also concerns to a method for suppressing noise for the device of the invention.

Abstract: Provided are methods for obtaining n-type doped metal chalcogenide quantum dot solid-state films. In some embodiments, the methods include forming an metal chalcogenide quantum dot solid-state film, carrying out a n-doping process on the metal chalcogenide quantum dots of the metal chalcogenide quantum dot solid-state film so that they exhibit intraband absorption, wherein the process includes partially substituting chalcogen atoms by halogen atoms in the metal chalcogenide quantum dots and providing a substance on the plurality of metal chalcogenide quantum dots, to avoid oxygen p-doping of the metal chalcogenide quantum dots. Also provided are optoelectronic devices, which in some embodiments can include an n-type doped metal chalcogenide quantum dot solid-state film (A) obtained by a method as disclosed herein and first (E1) and second (E2) electrodes in physical contact with two respective distanced regions of the film (A).

Abstract: Provided is a method for producing an electrically conductive composite, wherein the method includes: a) providing a bed of a polymer in a non-continuous solid form; b) providing, on the polymer bed, a composition that comprises a chemical precursor dissolved in a liquid medium made to inhibit a chemical reaction of the chemical precursor into forming an electrically conductive inorganic component; c) forming an electrically conductive inorganic component from a chemical reaction of the chemical precursor, by at least evaporating the liquid medium; and d) exposing to electromagnetic radiation an electromagnetic radiation absorber of the composition, to sinter those portions of said polymer bed in thermal contact therewith, to form a polymer network that percolates an electrically conductive network formed with the electrically conductive inorganic component. Also provided are a system and a package adapted to implement the presently disclosed method.

Abstract: The present invention relates to an optoelectronic apparatus, comprising: —an optoelectronic device comprising: —a transport structure (T) comprising a 2-dimensional layer; —a photosensitizing structure (P) to absorb incident light and induce changes in the electrical conductivity of the transport structure (T); and—drain (D) and source (S) electrodes electrically connected to the transport structure (T); —a read-out unit to read an electrical signal, generated at a transport channel of the transport structure (T), after an integration time interval tint has passed, and during a taccess that is at least 10 times shorter than tint, wherein tint is longer than a predetermined trapping time ?tr. The present invention also relates to a reading-out method, comprising performing the operations of the read-out unit of the apparatus of the invention, and to the use of the apparatus as a light detector or as an image sensor.

Abstract: The present invention relates to a system comprising an electronic apparatus which comprises: —an electronic device comprising: —a gate electrode structure (G, BE); —a dielectric (D) arranged over the gate electrode (G, BE); and —a charge sensing structure (CE) with a 2-dimensional charge sensing layer to provide a gate capacitance (Cg) between the charge sensing structure (CE) and the gate electrode structure (G, BE) and a quantum capacitance (Cq) resulting in a total capacitance (Ctot); —a read-out circuit configured so that when the total capacitance (Ctot) changes due to a change in the quantum capacitance (Cq), an imbalance between the total capacitance (Ctot) and the reference capacitance (Cf) results in a change on the output voltage (Vo) that is amplified to provide the read-out signal (So). The present invention also relates to an electronic apparatus like the one of the system of the present invention.

Abstract: The present invention relates to a method for self-repairing an object, wherein the object (O) comprises a matrix of a material in a continuous solid form, with optically resonant particles dispersed there within, and that has been made by fusing together particles and/or particulates of the material in a non-continuous solid form with heat transferred from the optically resonant particles that has been generated thereby when optically resonating induced by their exposure to building electromagnetic radiation. The method comprises exposing a damaged region (D) of the object (O) to repairing electromagnetic radiation (R) to be absorbed by the optically resonant particles that are dispersed therein to optically resonate to generate heat to fuse together portions of the matrix in thermal contact therewith. The system is adapted to implement the method of the invention.

Abstract: Provided is a light emitting device that includes a substrate; a first electrode formed by a first electrically conductive layer arranged over the substrate; an active light emitting layer arranged over said first electrically conductive layer, and that includes a host matrix and light emitting quantum dots embedded there within; and a second electrode formed by a second electrically conductive layer arranged over the active light emitting layer. The host matrix has charge carrier supplier quantum dots blended with the light emitting quantum dots, forming a binary blend where the charge carrier supplier quantum dots are made and arranged to supply charge carriers to the light emitting quantum dots, and wherein the light emitting quantum dots are made and arranged to accept the supplied charge carriers. Also provided is a spectrometer having the LED and a down-converting film for a LED.

Abstract: Provided are methods for obtaining n-type doped metal chalcogenide quantum dot solid-state films. In some embodiments, the methods include forming an metal chalcogenide quantum dot solid-state film, carrying out a n-doping process on the metal chalcogenide quantum dots of the metal chalcogenide quantum dot solid-state film so that they exhibit intraband absorption, wherein the process includes partially substituting chalcogen atoms by halogen atoms in the metal chalcogenide quantum dots and providing a substance on the plurality of metal chalcogenide quantum dots, to avoid oxygen p-doping of the metal chalcogenide quantum dots. Also provided are optoelectronic devices, which in some embodiments can include an n-type doped metal chalcogenide quantum dot solid-state film (A) obtained by a method as disclosed herein and first (E1) and second (E2) electrodes in physical contact with two respective distanced regions of the film (A).

Abstract: The present application relates to a method for producing a three-dimensional object, comprising:—providing a first material (A) and, thereon, a second material (B) which is a reversible chromic material;—applying a stimulus to the second material (B) to change its optical properties from non-strong optical or substantially non-strong optical absorption properties to strong optical absorption properties, regarding a specific wavelength, and—exposing the second material (B) to electromagnetic radiation to be absorbed thereby to photothermally fuse portions of the first material (A) in thermal contact with the second material (B). A second aspect of the application relates to a system adapted to implement the method of the first aspect. A third aspect of the application concerns a kit of materials for producing a three-dimensional object. In a fourth aspect, the application relates to a sensing device comprising a three-dimensional object manufactured according to the method presented in the application.

Abstract: Photovoltaic cells are fabricated in which the compositions of the light-absorbing layer and the electron-accepting layer are selected such that at least one side of the junction between these two layers is substantially depleted of charge carriers, i.e., both free electrons and free holes, in the absence of solar illumination. In further aspects of the invention, the light-absorbing layer is comprised of dual-shell passivated quantum dots, each having a quantum dot core with surface anions, an inner shell containing cations to passivate the core surface anions, and an outer shell to passivate the inner shell anions and anions on the core surface.

Abstract: The present invention relates to an optoelectronic apparatus comprising: —an optoelectronic device comprising: —a transport structure (T) comprising a 2-dimensional layer; —a photosensitizing structure (P) configured and arranged to absorb incident light and induce changes in the electrical conductivity of the transport structure (T); and —drain (D) and source (S) electrodes electrically connected to respective separate locations of the transport structure (T); —noise suppression means comprising a modulation unit including: —a control unit to generate and apply on the drain (D) or source (S) electrodes a voltage oscillating signal having a component with a frequency of ?m/2?; and —a signal extraction unit to extract a required electric signal, from an output signal, with no components below ?m/2?. The present invention also concerns to a method for suppressing noise for an optoelectronic apparatus according to the invention, and to the use of the apparatus as a light detector or as an image sensor.

Abstract: The present invention relates to a method for producing a 3D object and to a system adapted to implement the method, wherein the method comprises: —providing a powder material (G); —providing a radiation absorbent material, in the form of optically resonant particles (P), on a region to be sintered of the powder material; and —sintering the region to be sintered of the powder material (G), by exposing to light the optically resonant particles (P) to radiation. The method comprises providing the optically resonant particles (P) according to a distribution and proportion, with respect to the powder material (G) included in the region to be sintered, selected: —to disperse the optically resonant particles (P) within the powder material (G) included in said region, and —to avoid substantial agglomeration and substantial self-sintering of the optically resonant particles (P).