Patents by Inventor Gerhard Dorda

Gerhard Dorda has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 4680481
    Abstract: An integrated JK-flipflop circuit comprises two cross-coupled inverters formed by a transistor and a resistor element connected in series therewith. Additional logic elements connect inputs of the flipflop to the cross-coupled inverters. It is a goal to provide the flipflop circuit on the smallest possible semiconductor area. This is achieved since the transistors of the inverters are designed as hot electron transistors, whereby each of these transistors is combined with one of the additional logic elements provided as a field effect transistor to form a common component which assumes two transistor functions but only requires the area of one field effect transistor.
    Type: Grant
    Filed: August 2, 1984
    Date of Patent: July 14, 1987
    Assignee: Siemens Aktiengesellschaft
    Inventors: Doris Schmitt-Landsiedel, Gerhard Dorda
  • Patent number: 4661831
    Abstract: An integrated RS flip-flop circuit comprises two cross-coupled inverters which respectively consist of a field effect transistor and a resistor connected in series. Each field effect transistor is connected to an additional logic element whose control input represents the R or the S input, respectively. Realization of a flip-flop circuit on the smallest possible semiconductor is achieved by designing the additional logic elements as hot electron transistors, each of which is combined with one of the field effect transistors to form a common component which assumes two transistor functions but only requires the area of one field effect transistor. The invention is particularly useful in VLSI circuits.
    Type: Grant
    Filed: July 23, 1984
    Date of Patent: April 28, 1987
    Assignee: Siemens Aktiengesellschaft
    Inventors: Doris Schmitt-Landsiedel, Gerhard Dorda
  • Patent number: 4626887
    Abstract: A static storage cell is formed of two cross-coupled inverters each containing a field effect transistor and a resistor element connected in series therewith. Each circuit node is thus connected via an additional logic element to a bit line allocated thereto. A storage cell is provided which is on as small as possible a semiconductor area and has a short access time. This is achieved by designing the additional logic elements as hot electron transistors which are respectively combined with one of the field effect transistors to form a common component which only requires the area of a field effect transistor. The cell is useful in VLSI semiconductor memories.
    Type: Grant
    Filed: August 2, 1984
    Date of Patent: December 2, 1986
    Assignee: Siemens Aktiengesellschaft
    Inventors: Doris Schmitt-Landsiedel, Gerhard Dorda
  • Patent number: 4219829
    Abstract: A field effect transistor includes a semiconductor substrate of a first conductivity having a source zone and a drain zone of an opposite, second conductivity spaced apart therein and extending to the surface thereof. A surface channel adjoins the surface, is of the second conductivity, and extends in an area located between the source and drain zones. A gate electrode is carried above the surface channel, either on an insulator, or directly on the surface to form a Schottky junction. A second zone lies beneath the surface below or in overlapping relation to the surface channel and extends between the drain and source zones. The second channel is doped with dopant particles whose energy level in the forbidden band of the semiconductor substrate, at an operating temperature T, lies at a distance of more than 1/2 kT from the conduction band edge and valence band edge of the semiconductor substrate.
    Type: Grant
    Filed: May 4, 1977
    Date of Patent: August 26, 1980
    Assignee: Siemens Aktiengesellschaft
    Inventors: Gerhard Dorda, Ignaz Eisele
  • Patent number: 4027320
    Abstract: A static storage element in a field effect transistor arrangement, has source and drain zones in a semiconductor body and a gate insulation layer provided on the surface of the semiconductor body. A spatial region having a high lattice defect or trap density is formed in the gate insulation layer for storing a quantity of charge which can be altered by electromagnetic radiation.
    Type: Grant
    Filed: September 25, 1975
    Date of Patent: May 31, 1977
    Assignee: Siemens Aktiengesellschaft
    Inventors: Erwin Jacobs, Gerhard Dorda