Patents by Inventor Geun Su Lee

Geun Su Lee has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20210130954
    Abstract: Disclosed is a method of forming a thin film using a surface protection material, the method comprising supplying the surface protection material to the inside of a chamber on which a substrate is placed so that the surface protection material is adsorbed to the substrate, discharging the unadsorbed surface protection material from the inside of the chamber by purging the interior of the chamber, supplying a metal precursor to the inside of the chamber so that the metal precursor is adsorbed to the substrate, discharging the unadsorbed metal precursor from the inside of the chamber by purging the interior of the chamber, and supplying a reaction material to the inside of the chamber so that the reaction material reacts with the adsorbed metal precursor to form the thin film.
    Type: Application
    Filed: July 24, 2020
    Publication date: May 6, 2021
    Applicant: EUGENETECH MATERIALS CO., LTD.
    Inventors: Geun Su LEE, Jae Min KIM, Ha Na KIM, Woong Jin CHOI, Eun Ae JUNG, Dong Hyun LEE, Myung Soo LEE, Ji Won MOON, Dong Hak JANG, Hyun Sik NOH
  • Patent number: 10597777
    Abstract: The invention relates to a precursor composition containing a mixture of a Group IV organic compound represented by Formula 19 and any one compound selected from an organic aluminum compound represented by Formula 1, an organic gallium compound represented by Formula 7, or an organic germanium compound represented by Formula 16, and a method for forming a thin film by using the precursor composition.
    Type: Grant
    Filed: November 1, 2016
    Date of Patent: March 24, 2020
    Assignee: EUGENETECH MATERIALS CO., LTD.
    Inventors: Geun-Su Lee, Yeong-Min Lee
  • Publication number: 20180347042
    Abstract: A precursor composition according to an embodiment of the present invention contains a mixture of a Group IV organic compound and any one compound selected from an organic aluminum compound, an organic gallium compound, or an organic germanium compound.
    Type: Application
    Filed: November 1, 2016
    Publication date: December 6, 2018
    Applicant: EUGENETECH MATERIALS CO., LTD.
    Inventors: Geun-Su LEE, Yeong-Min LEE
  • Patent number: 9892964
    Abstract: A gap-fill polymer for filling fine pattern gaps, which has a low dielectric constant (low-k) and excellent gap filling properties, may consist of a compound formed by condensation polymerization of a first oligomer represented by the formula 1 and a second oligomer represented by the formula 2.
    Type: Grant
    Filed: March 27, 2017
    Date of Patent: February 13, 2018
    Assignee: SK Hynix Inc.
    Inventors: Ji Won Moon, Jin Wook Jang, Sang Youl Yi, Sung Jae Lee, Geun Su Lee, Young Sun Lee, Min Su Kim
  • Publication number: 20180033688
    Abstract: A gap-fill polymer for filling fine pattern gaps, which has a low dielectric constant (flow-k) and excellent gap filling properties may consist of a compound formed by condensation polymerization of a first oligomer represented by the formula 1 and a second oligomer represented by the formula 2.
    Type: Application
    Filed: March 27, 2017
    Publication date: February 1, 2018
    Inventors: Ji Won MOON, Jin Wook JANG, Sang Youl YI, Sung Jae LEE, Geun Su LEE, Young Sun LEE, Min Su KIM
  • Publication number: 20170117142
    Abstract: Disclosed are an organic germanium amine compound represented by chemical formula 1, recited in claim 1, and a film-forming method using the compound as a precursor. When the compound according to the present invention is used as a precursor, a germanium oxide film, a germanium nitride film, a metal germanium oxide film, a metal germanium nitride film, or the like, can be effectively formed by deposition.
    Type: Application
    Filed: March 18, 2015
    Publication date: April 27, 2017
    Inventors: Geun Su Lee, Yun Yeong Lee, Yeong Min Lee
  • Publication number: 20160362786
    Abstract: Disclosed are a precursor composition for forming a zirconium-containing film and a method for forming a zirconium-containing film by using the same, wherein the composition is characterized in that about 1 to 3 moles of a cycloaliphatic unsaturated compound represented by a particular chemical formula or an aromatic compound represented by a particular chemical formula: and about 1 to 3 moles of a cyclopentadienyl zirconium (IV)-based compound represented by a particular chemical formula are mixed. In the composition, the two constituent compounds are stable with each other and homogenously mixed with each other in a liquid state, without reacting with each other, and thus the composition behaves just like a single compound, and exhibits a high vapor pressure. The use of the composition of the present invention can obtain a zirconium-containing film, like high-quality zirconia, conveniently and economically.
    Type: Application
    Filed: February 26, 2015
    Publication date: December 15, 2016
    Inventors: Geun Su Lee, Joung Min Han
  • Patent number: 9029273
    Abstract: A method for forming a silicon oxide film of a semiconductor device is disclosed. The method of forming the silicon oxide film of the semiconductor device includes performing surface processing using an amine-based compound, so that the uniformity and density of the silicon oxide film may be improved.
    Type: Grant
    Filed: March 15, 2013
    Date of Patent: May 12, 2015
    Assignees: SK Hynix Inc.
    Inventors: Hyung Soon Park, Kwon Hong, Jong Min Lee, Hyung Hwan Kim, Ji Hye Han, Geun Su Lee
  • Publication number: 20140057458
    Abstract: A method for forming a silicon oxide film of a semiconductor device is disclosed. The method of forming the silicon oxide film of the semiconductor device includes performing surface processing using an amine-based compound, so that the uniformity and density of the silicon oxide film may be improved.
    Type: Application
    Filed: March 15, 2013
    Publication date: February 27, 2014
    Applicant: SK HYNIX INC.
    Inventors: Hyung Soon PARK, Kwon HONG, Jong Min LEE, Hyung Hwan KIM, Ji Hye HAN, Geun Su LEE
  • Patent number: 8202443
    Abstract: An etching composition for preventing from leaning a capacitor contains hydrofluoric acid (HF), ammonium fluoride (NH4F), an alkyl ammonium fluoride (ReNH3F; where Re is a C1-C10 linear or branched alkyl radical), a surfactant, an alcohol compound, and water. The composition can effectively suppress the leaning phenomenon of capacitors during the formation of the capacitors, so that height of the storage node of the capacitor can be secured, capacitors with improved capacitance can be manufactured, and the process can be adapted to the production of both present and future devices.
    Type: Grant
    Filed: July 9, 2010
    Date of Patent: June 19, 2012
    Assignee: Hynix Semiconductor Inc.
    Inventor: Geun Su Lee
  • Publication number: 20100317171
    Abstract: An etching composition for preventing from leaning a capacitor contains hydrofluoric acid (HF), ammonium fluoride (NH4F), an alkyl ammonium fluoride (ReNH3F; where Re is a C1-C10 linear or branched alkyl radical), a surfactant, an alcohol compound, and water. The composition can effectively suppress the leaning phenomenon of capacitors during the formation of the capacitors, so that height of the storage node of the capacitor can be secured, capacitors with improved capacitance can be manufactured, and the process can be adapted to the production of both present and future devices.
    Type: Application
    Filed: July 9, 2010
    Publication date: December 16, 2010
    Applicant: HYNIX SEMICONDUCTOR INC.
    Inventor: Geun Su Lee
  • Patent number: 7781145
    Abstract: Disclosed herein are photoresist cleaning solutions useful for cleaning a semiconductor substrate in the last step of a developing step when photoresist patterns are formed. Also disclosed herein are methods for forming photoresist patterns using the solutions. The cleaning solutions of the present invention include H2O as a primary component, a surfactant as an additive, and optionally an alcohol compound. The cleaning solution of the present invention has lower surface tension than that of distilled water which has been used for conventional cleaning solutions, thereby improving resistance to pattern collapse and stabilizing the photoresist pattern formation.
    Type: Grant
    Filed: November 5, 2007
    Date of Patent: August 24, 2010
    Assignee: Hynix Semiconductor Inc.
    Inventors: Geun Su Lee, Sam Young Kim, Keun Do Ban
  • Patent number: 7615338
    Abstract: A photoresist coating composition that includes a compound represented by Formula 1 and an aqueous solvent, and a method for forming a fine pattern by coating the composition on a photoresist pattern to effectively reduce a size of a photoresist contact hole and a space, which can be applied to all semiconductor processes.
    Type: Grant
    Filed: December 8, 2005
    Date of Patent: November 10, 2009
    Assignees: Hynix Semiconductor Inc., Youngchang Chemical Co., Ltd.
    Inventors: Geun Su Lee, Seung Chan Moon, Seung Hun Lee
  • Patent number: 7563753
    Abstract: Cleaning solutions for removing photoresist resins and a method of forming patterns using the same are disclosed. The cleaning solution includes water (H2O) as main component, one or more surfactants as additive selected from the group consisting of polyoxyalkylene compounds, a salt of alcohol amine of Formula 1 and hydrocarbon compounds having carboxylic acid (—COOH) group, a salt of alcohol amine of Formula 1 and hydrocarbon compounds having sulfonic acid (—SO3H) group, polyethylene glycol compounds, compounds of Formula 3, compounds having a molecular weight ranging from 1000 to 10000 including repeating unit of Formula 4, polyether denatured silicon compounds and alcohol compounds. wherein R1, R2, R3, R4, R5, A, l and n are defined in the specification.
    Type: Grant
    Filed: December 12, 2002
    Date of Patent: July 21, 2009
    Assignee: Hynix Semiconductor Inc.
    Inventors: Geun Su Lee, Jae Chang Jung, Ki Soo Shin, Keun Kyu Kong, Sung Koo Lee, Young Sun Hwang
  • Patent number: 7467632
    Abstract: A photoresist cleaning solution and method for forming photoresist patterns using the same. More specifically, disclosed are a photoresist cleaning solution comprising H2O and an ionic surfactant represented by Formula 1, and a method for forming a photoresist pattern using the same. By spraying the cleaning solution of the present invention over photoresist film before and/or after exposing step, pattern formation in an undesired region caused by ghost images can be removed.
    Type: Grant
    Filed: January 4, 2007
    Date of Patent: December 23, 2008
    Assignee: Hynix Semiconductor Inc.
    Inventors: Geun Su Lee, Cheol Kyu Bok
  • Patent number: 7449538
    Abstract: Disclosed herein is a cross-linking polymer that includes a silicon compound and a hydroxyl compound. Also disclosed herein is a composition that includes the cross-linking polymer and an organic solvent. The composition can be used as a part of hard mask film applied over an underlying layer during the manufacture of a semiconductor device. The hard mask film is useful in the formation of a uniform pattern on the device.
    Type: Grant
    Filed: June 2, 2006
    Date of Patent: November 11, 2008
    Assignee: Hynix Semiconductor Inc.
    Inventor: Geun Su Lee
  • Patent number: 7399570
    Abstract: Photoresist patterns are formed using a photoresist composition, which includes water, a negative photoresist polymer having a salt-type repeating unit, and a photoacid generator, so that a developing process can be performed not by using conventional TMAH solution but by using water. Additionally, because the main solvent of the composition is water, the disclosed photoresist composition is environment-friendly, and has a low light absorbance at 193 nm and 248 nm, which is useful in a photolithography process using a light source in a far ultraviolet region when high-integrated fine circuits of semiconductor device are manufactured.
    Type: Grant
    Filed: March 31, 2005
    Date of Patent: July 15, 2008
    Assignee: Hynix Semiconductor Inc.
    Inventor: Geun Su Lee
  • Publication number: 20080166842
    Abstract: An etching composition for preventing from leaning a capacitor contains hydrofluoric acid (HF), ammonium fluoride (NH4F), an alkyl ammonium fluoride (ReNH3F; where Re is a C1-C10 linear or branched alkyl radical), a surfactant, an alcohol compound, and water. The composition can effectively suppress the leaning phenomenon of capacitors during the formation of the capacitors, so that height of the storage node of the capacitor can be secured, capacitors with improved capacitance can be manufactured, and the process can be adapted to the production of both present and future devices.
    Type: Application
    Filed: April 6, 2007
    Publication date: July 10, 2008
    Applicant: HYNIX SEMICONDUCTOR INC.
    Inventor: Geun Su Lee
  • Patent number: 7390611
    Abstract: A photoresist coating composition that includes a compound represented by Formula 1 and an aqueous solvent, and a method for forming a fine pattern by coating the composition on a photoresist pattern to effectively reduce a size of a photoresist contact hole and a space, which can be applied to all of the semiconductor processes.
    Type: Grant
    Filed: November 2, 2005
    Date of Patent: June 24, 2008
    Assignee: Hynix Semiconductor Inc.
    Inventor: Geun Su Lee
  • Publication number: 20080138747
    Abstract: Disclosed herein are photoresist cleaning solutions useful for cleaning a semiconductor substrate in the last step of a developing step when photoresist patterns are formed. Also disclosed herein are methods for forming photoresist patterns using the solutions. The cleaning solutions of the present invention include H2O as a primary component, a surfactant as an additive, and optionally an alcohol compound. The cleaning solution of the present invention has lower surface tension than that of distilled water which has been used for conventional cleaning solutions, thereby improving resistance to pattern collapse and stabilizing the photoresist pattern formation.
    Type: Application
    Filed: November 5, 2007
    Publication date: June 12, 2008
    Applicant: HYNIX SEMICONDUCTOR INC.
    Inventors: Geun Su Lee, Sam Young Kim, Keun Do Ban