Patents by Inventor Geun-young Yeom
Geun-young Yeom has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240234146Abstract: One embodiment of the present invention provides a method of manufacturing an electronic device using a cyclic doping process including i) an operation of forming a unit transfer thin film including a two-dimensional material on a transfer substrate, ii) an operation of doping the unit transfer thin film in a low-damage doping process, iii) an operation of transferring the unit transfer thin film doped according to the operation ii) on a transfer target substrate, and iv) an operation of repeatedly performing the operations i) to iii) several times to reach a target thickness.Type: ApplicationFiled: October 20, 2023Publication date: July 11, 2024Applicant: Research & Business Foundation SUNGKYUNKWAN UNIVERSITYInventors: Geun Young YEOM, Ki Hyun KIM, Ji Eun KANG, Seong Jae YU, You Jin JI, Doo San KIM, Hyun Woo TAK, Yun Jong JANG, Hee Ju KIM, Ki Seok KIM
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Publication number: 20240203747Abstract: The present invention provides an isotropic etching method of two-dimensional semiconductor materials. The present invention provides an isotropic etching method of two-dimensional semiconductor materials including a first operation of arranging an etching object having a two-dimensional transition metal chalcogenide layer inside an etching space of a remote plasma system in which a discharge space and the etching space are separated, a second operation of extracting oxygen or halogen radical among plasma generated in the discharge space and reacting the two-dimensional transition metal chalcogenide layer with a surface to form an oxide layer and a radical adsorbate layer, and a third operation of selectively removing the oxide layer and the radical adsorbate layer in the etching space, wherein only an upper layer of the two-dimensional transition metal chalcogenide is precisely etched in units of atoms without defects and damage in a lower layer.Type: ApplicationFiled: December 13, 2023Publication date: June 20, 2024Applicant: Research & Business Foundation SUNGKYUNKWAN UNIVERSITYInventors: Geun Young YEOM, Ji Eun KANG, Seong Jae YU, You Jin JI, Hye Won HAN, Ji Min KIM
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Publication number: 20240194448Abstract: One embodiment of the present invention provides an atomic layer deposition device for filling a gap of a semiconductor structure with a high aspect ratio and a method of manufacturing the same. According to the atomic layer deposition method of filling the gap of the semiconductor structure with the high aspect ratio according to one embodiment of the present invention, it is possible to remove an overhang at an pattern top at the same time as deposition and perform the gap-filling to remove a void and a seam by improving bottom-up deposition in a high aspect ratio structure of 40:1 or more.Type: ApplicationFiled: December 8, 2023Publication date: June 13, 2024Applicant: RESEARCH & BUSINESS FOUNDATION SUNGKYUNKWAN UNIVERSITYInventors: Geun Young YEOM, Ho Gon KIM, Hyun Woo TAK, Jong Woo HONG, Ji Eun KANG
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Publication number: 20240186126Abstract: Proposed is a system for monitoring internal conditions of a processing chamber. The system includes at least one sensor provided inside the processing chamber and configured to measure an amount of reactant present inside the processing chamber, and a monitoring apparatus configured to monitor the internal conditions of the processing chamber on the basis of a measurement value received from the at least one sensor, wherein the monitoring apparatus determines at least one of a start point and an end point of a cleaning process for the processing chamber on the basis of a change in the measurement value.Type: ApplicationFiled: December 4, 2023Publication date: June 6, 2024Applicant: RESEARCH & BUSINESS FOUNDATION SUNGKYUNKWAN UNIVERSITYInventors: Geun Young YEOM, Dong Woo KIM, Ji Eun KANG, Seung Yup CHOI
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Publication number: 20240177972Abstract: Provided is a method for etching an atomic layer. The method for etching the atomic layer includes providing a substrate to a process chamber, wherein the process chamber comprises a first chamber part and a second chamber part, and the substrate is provided in the second chamber part, generating adsorption gas plasma in the first chamber part, adsorbing radicals of the adsorption gas plasma to the substrate so as to form a treatment layer, generating etching gas plasma in the first chamber part, and allowing electrons and ions of the etching gas plasma to be alternately incident into the treatment layer so as to perform desorption of the treatment layer.Type: ApplicationFiled: November 1, 2023Publication date: May 30, 2024Applicants: RESEARCH & BUSINESS FOUNDATION SUNGKYUNKWAN UNIVERSITY, IUCF-HYU (Industry-University Cooperation Foundation Hanyang University)Inventors: Geun Young YEOM, Chin Wook CHUNG, Yun Jong JANG, Doo San KIM, Ye Eun KIM, Hong Seong GIL, Hae In KWON, Jun Young PARK, Ji Won JUNG
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Publication number: 20240136187Abstract: One embodiment of the present invention provides a method of manufacturing an electronic device using a cyclic doping process including i) an operation of forming a unit transfer thin film including a two-dimensional material on a transfer substrate, ii) an operation of doping the unit transfer thin film in a low-damage doping process, iii) an operation of transferring the unit transfer thin film doped according to the operation ii) on a transfer target substrate, and iv) an operation of repeatedly performing the operations i) to iii) several times to reach a target thickness.Type: ApplicationFiled: October 19, 2023Publication date: April 25, 2024Applicant: Research & Business Foundation SUNGKYUNKWAN UNIVERSITYInventors: Geun Young YEOM, Ki Hyun KIM, Ji Eun KANG, Seong Jae YU, You Jin JI, Doo San KIM, Hyun Woo TAK, Yun Jong JANG, Hee Ju KIM, Ki Seok KIM
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Publication number: 20240096596Abstract: The present invention introduces a plasma etching method and apparatus. The plasma etching method may include forming a photoresist pattern on a target etching layer, hardening the surface of the photoresist pattern by exposing to a first plasma generated from a first discharge gas containing a reforming gas including carbon (C) and sulfur (S) and sequentially annealing, and etching the target etching layer with a second plasma generated from a second discharge gas using the surface-hardened photoresist pattern as a mask.Type: ApplicationFiled: September 20, 2023Publication date: March 21, 2024Applicant: Research & Business Foundation SUNGKYUNKWAN UNIVERSITYInventors: Geun Young YEOM, Wonjun CHANG, Hee Ju KIM, Ji Eun KANG, Soo NAM GOONG, Jong Woo HONG
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Publication number: 20230395386Abstract: An etching processing apparatus and an etching processing method using a liquid fluorocarbon or a liquid hydrofluorocarbon precursor are proposed, the etching processing apparatus and etching processing method capable of achieving almost the same effect as cryogenic etching even at a relatively high temperature compared to cryogenic etching. In addition, an etching processing apparatus and an etching processing method capable of solving process problems that may arise due to a liquid precursor and a low temperature may be provided.Type: ApplicationFiled: August 17, 2023Publication date: December 7, 2023Applicants: DAEJEON UNIVERSITY INDUSTRY-UNIVERSITY COOPERATION FOUNDATION, RESEARCH & BUSINESS FOUNDATION SUNGKYUNKWAN UNIVERSITYInventors: Kyong Nam KIM, Geun Young YEOM, Dong Woo KIM, Da In SUNG, Hyun Woo TAK, Ji Young OH
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Publication number: 20220375761Abstract: A dry etching method includes a first step of adsorbing first radicals into a surface of an etching target, wherein the first radicals are contained in first plasma generated from a plasma generator; and a second step of irradiating ion-beams extracted from second plasma generated from the plasma generator onto the surface of the etching target into which the radicals have been adsorbed, thereby desorbing a surface atomic layer of the etching target, wherein the first step is performed such that: a positive potential greater than a potential of the first plasma is applied to one or two selected from first to third grids, while a ground potential is applied to the rest thereof; and a negative potential equal to or lower than a potential of the third grid is applied to a substrate support structure.Type: ApplicationFiled: May 24, 2022Publication date: November 24, 2022Applicant: RESEARCH & BUSINESS FOUNDATION SUNGKYUNKWAN UNIVERSITYInventors: Geun Young YEOM, Doo San KIM, Yun Jong JANG, Ye Eun KIM, You Jung GILL, Ki Hyun KIM, Hee Ju KIM, You Jin JI
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Patent number: 11424375Abstract: A photoelectronic device includes a substrate; a first electrode and a second electrode disposed on the substrate and spaced apart from each other in a first direction; and a transition metal dichalcogenide thin film including at least one first region and at least one second region. Each first region includes M+N transition metal dichalcogenide molecular layers and extends along the first direction. Each second region includes N transition metal dichalcogenide molecular layers extending from lower N transition metal dichalcogenide molecular layers of the first region. Each second region extends along the first direction and is adjacent to each first region. Both end regions in the first direction among the first and the second regions are electrically connected to the first electrode and the second electrode, respectively.Type: GrantFiled: February 25, 2020Date of Patent: August 23, 2022Assignee: Research & Business Foundation Sungkyunkwan UniversityInventors: Geun Young Yeom, Ki Seok Kim, Ki Hyun Kim, You Jin Ji, Ji Young Byun
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Publication number: 20210384374Abstract: Disclosed is a method for manufacturing a semiconductor light emitting device. The method includes a first step of forming a semiconductor structure in which a first conductive-type semiconductor layer, an active layer, and a second conductive-type semiconductor layer are sequentially stacked; and a second step of forming a mesa structure by removing a portion of each of the second conductive-type semiconductor layer and the active layer, wherein the second step includes: forming a mesa structure by etching a portion of each of the second conductive-type semiconductor layer and the active layer using a plasma etching process; and performing an atomic layer etching process on a surface of the mesa structure formed by the plasma etching process.Type: ApplicationFiled: June 4, 2021Publication date: December 9, 2021Applicant: Research & Business Foundation Sungkyunkwan UniversityInventors: Geun Young YEOM, Dong Woo KIM, Youn Joon SUNG, Doo San KIM, Ju Eun KIM, You Jung GILL, Yun Jong JANG, Ye Eun KIM
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Patent number: 11127570Abstract: A plasma source device includes a pair of divided electrodes including a first divided electrode and a second divided electrode spaced apart from each other and electrically coupled to each other; and a ferrite structure comprising a portion interposed the first divided electrode and the second divided electrode.Type: GrantFiled: December 14, 2018Date of Patent: September 21, 2021Assignee: Research and Business Foundation Sungkyunkwan UniversityInventors: Geun Young Yeom, Ki Hyun Kim, Ki Seok Kim, You Jin Ji, Jin Woo Park, Doo San Kim, Won Oh Lee, Chang Hoon Song, Ji Young Byun, Ji Soo Oh, Hyun Woo Tak
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Patent number: 11120975Abstract: An ion-beam etching apparatus includes: a plasma chamber configured to generate plasma from process gas in the plasma chamber; at least one plasma valve coupled to the plasma chamber; an ion-beam source in communication with the plasma chamber, wherein the ion-beam source is configured to extract ions from the plasma and generate ion-beams when a bias is applied to the ion-beam source; an etching chamber in communication with the ion-beam source, and configured to accommodate an object to be etched; at least one etching valve coupled to the etching chamber; and at least one exhausting pump connected to either one or both of the plasma chamber and the etching chamber by the plasma valve and the etching valve, respectively, wherein the at least one exhausting pump is configured to receive and exhaust radicals in either one or both of the plasma chamber and the etching chamber by the plasma valve and the etching valve, respectively.Type: GrantFiled: July 26, 2018Date of Patent: September 14, 2021Assignee: Research and Business Foundation Sungkyunkwan UniversityInventors: Geun Young Yeom, Jin Woo Park, Doo San Kim, Jong Sik Oh, Da In Sung, You Jin Ji, Won Oh Lee, Mu Kyeom Mun, Kyung Chae Yang, Ki Seok Kim, Ji Soo Oh, Ki Hyun Kim
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Patent number: 10916670Abstract: The present disclosure relates to a semiconductor device and a photoelectronic device, both including a transition-metal dichalcogenide thin-film, and to a method for producing a transition-metal dichalcogenide thin-film. The transition-metal dichalcogenide thin-film includes: a first region including a stack of N+M transition-metal dichalcogenide molecular layers; and a second region including a stack of N transition-metal dichalcogenide molecular layers, wherein the second region is horizontally adjacent to the first region, wherein the N transition-metal dichalcogenide molecular layers of the second region respectively horizontally extend from the N transition-metal dichalcogenide molecular layers of the first region.Type: GrantFiled: January 29, 2020Date of Patent: February 9, 2021Assignee: Research & Business Foundation Sungkyunkwan UniversityInventors: Geun Young Yeom, Ki Seok Kim, Ki Hyun Kim, Jin Woo Park, Doo San Kim, You Jin Ji, Ji Young Byun, JiEun Kang
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Patent number: 10784082Abstract: Disclosed is an inductively-coupled plasma-generating device including: a first power supply for supplying high frequency power; a second power supply for supplying low frequency power; a single coil-based plasma source including at least two antennas which comprise a first antenna having one end as a grounded end and the other end, wherein the first power supply is connected to the first antenna at a point thereof adjacent to the grounded end to receive the high frequency power; and a second antenna surrounded by the first antenna, wherein the second antenna has one end connected to the first antenna and the other end as a low frequency power receiving end connected to the second power supply; and a gas supply for supplying a gas, wherein the gas is excited into plasma by the single coil-based plasma source.Type: GrantFiled: February 14, 2019Date of Patent: September 22, 2020Assignee: Research & Business Foundation Sungkyunkwan UniversityInventors: Geun Young Yeom, Kyung Chae Yang, Hyun Woo Tak, Ye Ji Shin, Da In Sung
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Publication number: 20200274010Abstract: A photoelectronic device includes a substrate; a first electrode and a second electrode disposed on the substrate and spaced apart from each other in a first direction; and a transition metal dichalcogenide thin film including at least one first region and at least one second region. Each first region includes M+N transition metal dichalcogenide molecular layers and extends along the first direction. Each second region includes N transition metal dichalcogenide molecular layers extending from lower N transition metal dichalcogenide molecular layers of the first region. Each second region extends along the first direction and is adjacent to each first region. Both end regions in the first direction among the first and the second regions are electrically connected to the first electrode and the second electrode, respectively.Type: ApplicationFiled: February 25, 2020Publication date: August 27, 2020Applicant: Research & Business Foundation Sungkyunkwan UniversityInventors: Geun Young YEOM, Ki Seok KIM, Ki Hyun KIM, You Jin JI, Ji Young BYUN
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Publication number: 20200176620Abstract: The present disclosure relates to a semiconductor device and a photoelectronic device, both including a transition-metal dichalcogenide thin-film, and to a method for producing a transition-metal dichalcogenide thin-film. The transition-metal dichalcogenide thin-film includes: a first region including a stack of N+M transition-metal dichalcogenide molecular layers; and a second region including a stack of N transition-metal dichalcogenide molecular layers, wherein the second region is horizontally adjacent to the first region, wherein the N transition-metal dichalcogenide molecular layers of the second region respectively horizontally extend from the N transition-metal dichalcogenide molecular layers of the first region.Type: ApplicationFiled: January 29, 2020Publication date: June 4, 2020Applicant: RESEARCH & BUSINESS FOUNDATION SUNGKYUNKWAN UNIVERSITYInventors: Geun Young YEOM, Ki Seok KIM, Ki Hyun KIM, Jin Woo PARK, Doo San KIM, You Jin JI, Ji Young BYUN
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Patent number: 10593819Abstract: The present disclosure relates to a semiconductor device and a photoelectronic device, both including a transition-metal dichalcogenide thin-film, and to a method for producing a transition-metal dichalcogenide thin-film. The transition-metal dichalcogenide thin-film includes: a first region including a stack of N+M transition-metal dichalcogenide molecular layers; and a second region including a stack of N transition-metal dichalcogenide molecular layers, wherein the second region is horizontally adjacent to the first region, wherein the N transition-metal dichalcogenide molecular layers of the second region respectively horizontally extend from the N transition-metal dichalcogenide molecular layers of the first region.Type: GrantFiled: July 31, 2018Date of Patent: March 17, 2020Assignee: Research & Business Foundation Sungkyunkwan UniversityInventors: Geun Young Yeom, Ki Seok Kim, Ki Hyun Kim, Jin Woo Park, Doo San Kim, You Jin Ji, Ji Young Byun
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Publication number: 20190252153Abstract: Disclosed is an inductively-coupled plasma-generating device including: a first power supply for supplying high frequency power; a second power supply for supplying low frequency power; a single coil-based plasma source including at least two antennas which comprise a first antenna having one end as a grounded end and the other end, wherein the first power supply is connected to the first antenna at a point thereof adjacent to the grounded end to receive the high frequency power; and a second antenna surrounded by the first antenna, wherein the second antenna has one end connected to the first antenna and the other end as a low frequency power receiving end connected to the second power supply; and a gas supply for supplying a gas, wherein the gas is excited into plasma by the single coil-based plasma source.Type: ApplicationFiled: February 14, 2019Publication date: August 15, 2019Applicant: Research & Business Foundation Sungkyunkwan UniversityInventors: Geun Young YEOM, Kyung Chae YANG, Hyun Woo Tak, Ye Ji SHIN, Da In SUNG
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Publication number: 20190221404Abstract: A plasma source device includes a pair of divided electrodes including a first divided electrode and a second divided electrode spaced apart from each other and electrically coupled to each other; and a ferrite structure comprising a portion interposed between the first divided electrode and the second divided electrode.Type: ApplicationFiled: December 14, 2018Publication date: July 18, 2019Applicant: Research & Business Foundation Sungkyunkwan UniversityInventors: Geun Young YEOM, Ki Hyun KIM, Ki Seok KIM, You Jin JI, Jin Woo PARK, Doo San KIM, Won Oh LEE, Chang Hoon Song, Ji Young Byun, Ji Soo Oh, Hyun Woo Tak