Patents by Inventor Geun-young Yeom

Geun-young Yeom has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20190252153
    Abstract: Disclosed is an inductively-coupled plasma-generating device including: a first power supply for supplying high frequency power; a second power supply for supplying low frequency power; a single coil-based plasma source including at least two antennas which comprise a first antenna having one end as a grounded end and the other end, wherein the first power supply is connected to the first antenna at a point thereof adjacent to the grounded end to receive the high frequency power; and a second antenna surrounded by the first antenna, wherein the second antenna has one end connected to the first antenna and the other end as a low frequency power receiving end connected to the second power supply; and a gas supply for supplying a gas, wherein the gas is excited into plasma by the single coil-based plasma source.
    Type: Application
    Filed: February 14, 2019
    Publication date: August 15, 2019
    Applicant: Research & Business Foundation Sungkyunkwan University
    Inventors: Geun Young YEOM, Kyung Chae YANG, Hyun Woo Tak, Ye Ji SHIN, Da In SUNG
  • Publication number: 20190221404
    Abstract: A plasma source device includes a pair of divided electrodes including a first divided electrode and a second divided electrode spaced apart from each other and electrically coupled to each other; and a ferrite structure comprising a portion interposed between the first divided electrode and the second divided electrode.
    Type: Application
    Filed: December 14, 2018
    Publication date: July 18, 2019
    Applicant: Research & Business Foundation Sungkyunkwan University
    Inventors: Geun Young YEOM, Ki Hyun KIM, Ki Seok KIM, You Jin JI, Jin Woo PARK, Doo San KIM, Won Oh LEE, Chang Hoon Song, Ji Young Byun, Ji Soo Oh, Hyun Woo Tak
  • Publication number: 20190044009
    Abstract: The present disclosure relates to a semiconductor device and a photoelectronic device, both including a transition-metal dichalcogenide thin-film, and to a method for producing a transition-metal dichalcogenide thin-film. The transition-metal dichalcogenide thin-film includes: a first region including a stack of N+M transition-metal dichalcogenide molecular layers; and a second region including a stack of N transition-metal dichalcogenide molecular layers, wherein the second region is horizontally adjacent to the first region, wherein the N transition-metal dichalcogenide molecular layers of the second region respectively horizontally extend from the N transition-metal dichalcogenide molecular layers of the first region.
    Type: Application
    Filed: July 31, 2018
    Publication date: February 7, 2019
    Applicant: RESEARCH & BUSINESS FOUNDATION SUNGKYUNKWAN UNIVERSITY
    Inventors: Geun Young YEOM, Ki Seok KIM, Ki Hyun KIM, Jin Woo PARK, Doo San KIM, You Jin JI, Ji Young BYUN
  • Publication number: 20190035610
    Abstract: An ion-beam etching apparatus includes: a plasma chamber configured to generate plasma from process gas in the plasma chamber; at least one plasma valve coupled to the plasma chamber; an ion-beam source in communication with the plasma chamber, wherein the ion-beam source is configured to extract ions from the plasma and generate ion-beams when a bias is applied to the ion-beam source; an etching chamber in communication with the ion-beam source, and configured to accommodate an object to be etched; at least one etching valve coupled to the etching chamber; and at least one exhausting pump connected to either one or both of the plasma chamber and the etching chamber by the plasma valve and the etching valve, respectively, wherein the at least one exhausting pump is configured to receive and exhaust radicals in either one or both of the plasma chamber and the etching chamber by the plasma valve and the etching valve, respectively.
    Type: Application
    Filed: July 26, 2018
    Publication date: January 31, 2019
    Applicant: Research & Business Foundation Sungkyunkwan University
    Inventors: Geun Young YEOM, Jin Woo PARK, Doo San KIM, Jong Sik OH, Da In SUNG, You Jin JI, Won Oh LEE, Mu Kyeom MUN, Kyung Chae YANG, Ki Seok KIM, Ji Soo OH, Ki Hyun KIM
  • Patent number: 9245752
    Abstract: This present disclosure relates to an atomic layer etching method for graphene, including adsorbing reactive radicals onto a surface of the graphene and irradiating an energy source to the graphene on which the reactive radicals are adsorbed.
    Type: Grant
    Filed: January 22, 2014
    Date of Patent: January 26, 2016
    Assignee: Research & Business Foundation Sungkyunkwan University
    Inventors: Geun Young Yeom, Woong Sun Lim, Kyung Seok Min, Yi Yeon Kim, Jong Sik Oh
  • Patent number: 8974630
    Abstract: An inductively coupled plasma processing apparatus for a large area processing includes a reaction chamber and a bending type antenna structure. The bending type antenna structure includes bending type linear antennas. Each of the bending type linear antennas has a first end, a second end and a bended portion. The bending type linear antennas are arranged horizontally in parallel with the substrate to pass through the reaction chamber inside the reaction chamber. The bending type linear antennas are spaced apart from each other. A bended portion of a bending type linear antenna is protruded out of the reaction chamber, a first end of each of the bending type linear antennas is protruded out of the reaction chamber and is coupled to an RF power, and a second end of each of the bending type linear antennas is protruded out of the reaction chamber and is coupled to a ground.
    Type: Grant
    Filed: December 11, 2008
    Date of Patent: March 10, 2015
    Assignee: Sungkyunkwan University
    Inventors: Geun-Young Yeom, Young-Joon Lee, Kyong-Nam Kim
  • Publication number: 20140206192
    Abstract: This present disclosure relates to an atomic layer etching method for graphene, including adsorbing reactive radicals onto a surface of the graphene and irradiating an energy source to the graphene on which the reactive radicals are adsorbed.
    Type: Application
    Filed: January 22, 2014
    Publication date: July 24, 2014
    Applicant: RESEARCH & BUSINESS FOUNDATION SUNGKYUNKWAN UNIVERSITY
    Inventors: Geun Young YEOM, Woong Sun LIM, Kyung Seok MIN, Yi Yeon KIM, Jong Sik OH
  • Publication number: 20130049592
    Abstract: A method for controlling synchronization of pulsed plasma by applying a DC power is provided. The method includes repeatedly generating and extinguishing the plasma by adjusting an ON-period and an OFF-period of a pulsed RF power being applied to a source electrode part. And the method also includes alternately applying a DC power to a bias electrode part in accordance with the ON-period and the OFF-period.
    Type: Application
    Filed: August 24, 2012
    Publication date: February 28, 2013
    Applicant: RESEARCH & BUSINESS FOUNDATION SUNGKYUNKWAN UNIVERSITY
    Inventors: Geun Young YEOM, Se Koo KANG, Min Hwan JEON, Jong Yun PARK, Byoung Jae PARK, Je Kwan YEON
  • Patent number: 8293069
    Abstract: A inductively coupled plasma apparatus includes reaction chamber in which a substrate is loaded, and a double comb type antenna structure including first linear antennas and second linear antennas respectively arranged horizontally to pass through the reaction chamber inside the reaction chamber. The first and second linear antenna are alternately aligned each other. First ends the first linear antennas are protruded out of the reaction chamber and coupled to each other so as to be coupled to a first induced RF power, and first ends of the second linear antennas are protruded out of the reaction chamber in opposition to the first ends of the first linear antennas and coupled to each other so as to be coupled to a second induced RF power. Plasma uniformity is improved and superior plasma uniformity is maintained by adjusting a distance between antennas according to a size of the substrate.
    Type: Grant
    Filed: December 10, 2008
    Date of Patent: October 23, 2012
    Assignee: Sungkyunkwan University
    Inventors: Geun-Young Yeom, Kyong-Nam Kim, Seung-Jae Jung
  • Publication number: 20120129347
    Abstract: An apparatus and method for processing a surface of a substrate using neutral beams are provided to repeatedly process an oxide layer using the neutral beams having low energy to minimize electrical damage to the oxide layer and improve characteristics of the oxide layer. The apparatus is mounted in a plasma generating chamber, and includes: an ion beam generating gas inlet, which injects a gas for generating ion beams; an ion source, which generates the ion beams having a polarity from the gas introduced through the ion beam generating gas inlet; a grid assembly, which is installed on one end of the ion source; a reflector, which is aligned with the grid assembly and converts the ion beams to the neutral beams; and a stage, on which the substrate is placed on a traveling path of the neutral beams.
    Type: Application
    Filed: November 10, 2011
    Publication date: May 24, 2012
    Inventors: Geun-Young Yeom, Byoung-Jae Park, Sung-Woo Kim
  • Publication number: 20110192820
    Abstract: An atomic layer etching apparatus using reactive radicals and neutral beams and an etching method using the same are provided.
    Type: Application
    Filed: February 25, 2010
    Publication date: August 11, 2011
    Applicant: SUNGKYUNKWAN UNIVERSITY Foundation for Corporate Collaboration
    Inventors: Geun-Young Yeom, Woong-Sun Lim, Sang-Duk Park, Yi-Yeon Kim, Byoung-Jae Park, Je-Kwan Yeon
  • Publication number: 20110162581
    Abstract: Disclosed are an atomic layer deposition apparatus using a neutral beam and a method of depositing an atomic layer using the apparatus, capable of converting an ion beam into a neutral beam and radiating it onto a substrate to be treated. The method uses an apparatus for supplying a first reaction gas containing a material that cannot be chemisorbed onto a substrate to be treated into a reaction chamber in which the substrate is loaded, and forming a first reactant adsorption layer containing a material that cannot be chemisorbed onto the substrate; and radiating a neutral beam generated by the second reaction gas onto the substrate on which the first reactant adsorption layer is formed, and removing a material not chemisorbed onto the substrate from the first reactant adsorption layer to form a second reactant adsorption layer.
    Type: Application
    Filed: March 17, 2011
    Publication date: July 7, 2011
    Inventors: Geun-Young Yeom, Do-Haing Lee, Byoung-Jae Park, Kyeong-Joon Ahn
  • Patent number: 7919142
    Abstract: Disclosed are an atomic layer deposition apparatus using a neutral beam and a method of depositing an atomic layer using the apparatus, capable of converting an ion beam into a neutral beam and radiating it onto a substrate to be treated. The method uses an apparatus for supplying a first reaction gas containing a material that cannot be chemisorbed onto a substrate to be treated into a reaction chamber in which the substrate is loaded, and forming a first reactant adsorption layer containing a material that cannot be chemisorbed onto the substrate; and radiating a neutral beam generated by the second reaction gas onto the substrate on which the first reactant adsorption layer is formed, and removing a material not chemisorbed onto the substrate from the first reactant adsorption layer to form a second reactant adsorption layer.
    Type: Grant
    Filed: February 7, 2006
    Date of Patent: April 5, 2011
    Assignee: Sungkyunkwan University Foundation for Corporate Collaboration
    Inventors: Geun-Young Yeom, Do-Haing Lee, Byoung-Jae Park, Kyeong-Joon Ahn
  • Patent number: 7842159
    Abstract: A plasma processing apparatus for a very large area using a dual frequency is provided.
    Type: Grant
    Filed: July 5, 2006
    Date of Patent: November 30, 2010
    Assignee: Sungkyunkwan University Foundation for Corporate Collaboration
    Inventors: Geun-Young Yeom, Kyong-Nam Kim
  • Patent number: 7799706
    Abstract: A neutral beam-assisted atomic layer chemical vapor deposition (ALCVD) apparatus is provided for uniformly depositing an oxide layer filling a planarization layer or a trench to increase uniformity and density of the oxide layer using neutral beams generated by a neutral beam generator without a seam or void occurring in an atomic layer deposition (ALD) or ALD-like chemical vapor deposition (CVD) process, thereby solving problems on the void or seam and low density occurring when a high-density planarization layer or a shallow trench having a width of 65 nm or less is formed, and improving a next generation oxide layer isolation process.
    Type: Grant
    Filed: February 14, 2008
    Date of Patent: September 21, 2010
    Assignee: Sungkyunkwan University Foundation for Corporate Collaboration
    Inventors: Geun-young Yeom, Byoung-jae Park, Sung-woo Kim, Jong-tae Lim
  • Patent number: 7777178
    Abstract: A plasma generating apparatus and method using a neutral beam, capable of readily generating plasma at the same gas flow rate by changing the structure of an ion gun, without a separate ignition device, are provided. The apparatus includes a plasma generating part formed of a quartz cup, a radio frequency (RF) applying antenna disposed at the periphery of the plasma generating part, a cooling water supply part disposed at the periphery of the plasma generating part, and an igniter in direct communication with the plasma generating part, wherein a gas for generating plasma is supplied into the igniter, and the igniter has a higher local pressure than the plasma generating part at the same gas flow rate. The ion gun is also cheaper to manufacture since it does not require a separate power supply.
    Type: Grant
    Filed: March 23, 2006
    Date of Patent: August 17, 2010
    Assignee: Sungyunkwan University Foundation for Corporate Collaboration
    Inventors: Geun-Young Yeom, Sang-Duk Park, Chang-Kwon Oh
  • Publication number: 20100117096
    Abstract: The invention provides a reliable technique to fabricate a new vertical structure compound semiconductor devices with highly improved light output. An exemplary embodiment of a method of fabricating light emitting semiconductor devices comprising the steps of forming a light emitting layer, and forming an undulated surface over light emitting layer to improve light output. In one embodiment, the method further comprises the step of forming a lens over the undulated surface of each of the semiconductor devices. In one embodiment, the method of claim further comprises the steps of forming a contact pad over the semiconductor structure to contact with the light emitting layer, and packaging each of the semiconductor devices in a package including an upper lead frame and lower lead frame. Advantages of the invention include an improved technique for fabricating semiconductor devices with great yield, reliability and light output.
    Type: Application
    Filed: January 19, 2010
    Publication date: May 13, 2010
    Applicant: VERTICLE, INC.
    Inventors: Myung Cheol Yoo, Dong Woo Kim, Geun Young Yeom
  • Publication number: 20090203221
    Abstract: An apparatus and method for incorporating a composition into a substrate using neutral beams are provided to repeatedly process an oxide layer using the neutral beams having low energy to minimize electrical damage to the oxide layer and improve characteristics of the oxide layer. The apparatus is mounted in a plasma generating chamber, and includes: an ion beam generating gas inlet, which injects a gas for generating ion beams; an ion source, which generates the ion beams having a polarity from the gas introduced through the ion beam generating gas inlet; a grid assembly, which is installed on one end of the ion source; a reflector, which is aligned with the grid assembly and converts the ion beams to the neutral beams; and a stage, on which the substrate is placed on a traveling path of the neutral beams. Formation of the oxide layer and application of the neutral beams are repeatedly performed on the substrate so as to improve the characteristics of the oxide layer.
    Type: Application
    Filed: February 14, 2008
    Publication date: August 13, 2009
    Applicant: SUNGKYUNKWAN UNIVERSITY Foundation
    Inventors: Geun-young YEOM, Byoung-jae Park, Sung-woo Kim
  • Publication number: 20090203226
    Abstract: A neutral beam-assisted atomic layer chemical vapor deposition (ALCVD) apparatus is provided for uniformly depositing an oxide layer filling a planarization layer or a trench to increase uniformity and density of the oxide layer using neutral beams generated by a neutral beam generator without a seam or void occurring in an atomic layer deposition (ALD) or ALD-like chemical vapor deposition (CVD) process, thereby solving problems on the void or seam and low density occurring when a high-density planarization layer or a shallow trench having a width of 65 nm or less is formed, and improving a next generation oxide layer isolation process.
    Type: Application
    Filed: February 14, 2008
    Publication date: August 13, 2009
    Applicant: SUNGKYUNKWAN UNIVERSITY Foundation for Corporate Collaboration
    Inventors: Geun-young Yeom, Byoung-jae Park, Sung-woo Kim, Jong-tae Lim
  • Publication number: 20090173445
    Abstract: An inductively coupled plasma processing apparatus for a large area processing includes a reaction chamber and a bending type antenna structure. The bending type antenna structure includes bending type linear antennas. Each of the bending type linear antennas has a first end, a second end and a bended portion. The bending type linear antennas are arranged horizontally in parallel with the substrate to pass through the reaction chamber inside the reaction chamber. The bending type linear antennas are spaced apart from each other. A bended portion of a bending type linear antenna is protruded out of the reaction chamber, a first end of each of the bending type linear antennas is protruded out of the reaction chamber and is coupled to an RF power, and a second end of each of the bending type linear antennas is protruded out of the reaction chamber and is coupled to a ground.
    Type: Application
    Filed: December 11, 2008
    Publication date: July 9, 2009
    Inventors: Geun-Young Yeom, Young-Joon Lee, Kyong-Nam Kim