Patents by Inventor Gil Sik Lee
Gil Sik Lee has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11453590Abstract: Effective techniques for patterning carbon nanotube (CNT) sheets are disclosed herein. A carbon nanotube forest is grown on a catalyst-incorporated substrate, CNT sheets are drawn from the carbon nanotube forest, the CNT sheets are stacked on a substrate, followed by etching the CNT sheets by using a shadow mask through a controlled etch process. In some implementations, etching of the CNT sheets is carried out in a capacitively coupled plasma (CCP) etching system, where the CNT sheets are selectively exposed, in a controlled environment, to oxygen plasma via the shadow mask.Type: GrantFiled: October 21, 2019Date of Patent: September 27, 2022Assignee: Board of Regents, The University of Texas SystemInventors: Behnoush Dousti, Gil Sik Lee, Negar Geramifard
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Publication number: 20200123009Abstract: Effective techniques for patterning carbon nanotube (CNT) sheets are disclosed herein. A carbon nanotube forest is grown on a catalyst-incorporated substrate, CNT sheets are drawn from the carbon nanotube forest, the CNT sheets are stacked on a substrate, followed by etching the CNT sheets by using a shadow mask through a controlled etch process. In some implementations, etching of the CNT sheets is carried out in a capacitively coupled plasma (CCP) etching system, where the CNT sheets are selectively exposed, in a controlled environment, to oxygen plasma via the shadow mask.Type: ApplicationFiled: October 21, 2019Publication date: April 23, 2020Applicant: Board of Regents, The University of Texas SystemInventors: Behnoush Dousti, Gil Sik Lee, Negar Gerami Fard
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Patent number: 9018088Abstract: Growing spin-capable multi-walled carbon nanotube (MWCNT) forests in a repeatable fashion will become possible through understanding the critical factors affecting the forest growth. Here we show that the spinning capability depends on the alignment of adjacent MWCNTs in the forest which in turn results from the synergistic combination of a high areal density of MWCNTs and short distance between the MWCNTs. This can be realized by starting with both the proper Fe nanoparticle size and density which strongly depend on the sheet resistance of the catalyst film. Simple measurement of the sheet resistance can allow one to reliably predict the growth of spin-capable forests. The properties of pulled MWCNTs sheets reflect that there is a relationship between their electrical resistance and optical transmittance. Overlaying either 3, 5, or 10 sheets pulled out from a single forest produces much more repeatable characteristics.Type: GrantFiled: April 1, 2013Date of Patent: April 28, 2015Assignee: Board of Regents, The University of Texas SystemsInventors: Jae Hak Kim, Gil Sik Lee, Kyung Hwan Lee, Lawrence J. Overzet
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Publication number: 20130224371Abstract: Growing spin-capable multi-walled carbon nanotube (MWCNT) forests in a repeatable fashion will become possible through understanding the critical factors affecting the forest growth. Here we show that the spinning capability depends on the alignment of adjacent MWCNTs in the forest which in turn results from the synergistic combination of a high areal density of MWCNTs and short distance between the MWCNTs. This can be realized by starting with both the proper Fe nanoparticle size and density which strongly depend on the sheet resistance of the catalyst film. Simple measurement of the sheet resistance can allow one to reliably predict the growth of spin-capable forests. The properties of pulled MWCNTs sheets reflect that there is a relationship between their electrical resistance and optical transmittance. Overlaying either 3, 5, or 10 sheets pulled out from a single forest produces much more repeatable characteristics.Type: ApplicationFiled: April 1, 2013Publication date: August 29, 2013Applicant: THE BOARD OF REGENTS OF THE UNIVERSITY OF TEXAS SYSTEMInventors: Jae Hak Kim, Gil Sik Lee, Kyung Hwan Lee, Lawrence J. Overzet
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Patent number: 8409768Abstract: Growing spin-capable multi-walled carbon nanotube (MWCNT) forests in a repeatable fashion will become possible through understanding the critical factors affecting the forest growth. Here we show that the spinning capability depends on the alignment of adjacent MWCNTs in the forest which in turn results from the synergistic combination of a high areal density of MWCNTs and short distance between the MWCNTs. This can be realized by starting with both the proper Fe nanoparticle size and density which strongly depend on the sheet resistance of the catalyst film. Simple measurement of the sheet resistance can allow one to reliably predict the growth of spin-capable forests. The properties of pulled MWCNTs sheets reflect that there is a relationship between their electrical resistance and optical transmittance. Overlaying either 3, 5, or 10 sheets pulled out from a single forest produces much more repeatable characteristics.Type: GrantFiled: October 12, 2010Date of Patent: April 2, 2013Assignee: Board of Regents, The University of Texas SystemsInventors: Jae Hak Kim, Gil Sik Lee, Kyung Hwan Lee, Lawrence J. Overzet
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Patent number: 8110990Abstract: Disclosed is an atmospheric pressure plasma apparatus for enhancing and or controlling the dissociation of a secondary gas by converting a source gas into a plasma state at atmospheric pressure and controlling the interaction between that plasma and the secondary gas using porous metal, and ceramic tubes to create a path having controllable isolation from the region where plasma is generated.Type: GrantFiled: December 9, 2008Date of Patent: February 7, 2012Assignees: Korea Institute of Industrial Technology, Board of Regents, The University of Texas SystemInventors: Bum Ho Choi, Jong Ho Lee, Jung Chan Bae, Yong-Seok Park, Chun-Seong Park, Woo Sam Kim, Gil Sik Lee, Lawrence John Overzet, Byeong Jun Lee
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Publication number: 20110086464Abstract: Growing spin-capable multi-walled carbon nanotube (MWCNT) forests in a repeatable fashion will become possible through understanding the critical factors affecting the forest growth. Here we show that the spinning capability depends on the alignment of adjacent MWCNTs in the forest which in turn results from the synergistic combination of a high areal density of MWCNTs and short distance between the MWCNTs. This can be realized by starting with both the proper Fe nanoparticle size and density which strongly depend on the sheet resistance of the catalyst film. Simple measurement of the sheet resistance can allow one to reliably predict the growth of spin-capable forests. The properties of pulled MWCNTs sheets reflect that there is a relationship between their electrical resistance and optical transmittance. Overlaying either 3, 5, or 10 sheets pulled out from a single forest produces much more repeatable characteristics.Type: ApplicationFiled: October 12, 2010Publication date: April 14, 2011Applicant: BOARD OF REGENTS, THE UNIVERSITY OF TEXAS SYSTEMInventors: Jae Hak Kim, Gil Sik Lee, Kyung Hwan Lee, Lawrence J. Overzet
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Publication number: 20100033096Abstract: Disclosed is an atmospheric pressure plasma apparatus for enhancing and or controlling the dissociation of a secondary gas by converting a source gas into a plasma state at atmospheric pressure and controlling the interaction between that plasma and the secondary gas using porous metal, and ceramic tubes to create a path having controllable isolation from the region where plasma is generated.Type: ApplicationFiled: December 9, 2008Publication date: February 11, 2010Applicants: KOREA INSTITUTE OF INDUSTRIAL TECHNOLOGY, BOARD OF REGENTS, THE UNIVERSITY OF TEXAS SYSTEMInventors: Bum Ho Choi, Jong Ho Lee, Jung Chan Bae, Yong-Seok Park, Chun-Seong Park, Woo Sam Kim, Gil Sik Lee, Lawrence John Overzet, Byeong Jun Lee
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Publication number: 20020106460Abstract: Fluorocarbonated silicon films having very low dielectric constants, and a method for fabricating those films are disclosed. The low dielectric constants of the novel films make them suitable for use in ULSI fabrication techniques. The novel films may be prepared using a SiH4 or Si2H6 precursor as a silicon source, and CF4, C2F6, or C4F8 as a source of carbon and fluorine. The films not only have low dielectric constants (typically, k=1.9 to 2.3), they also exhibit high dielectric breakdown voltages. The process may be carried out at relatively low temperatures. The novel films may readily be used with conventional etching techniques, and they adhere well.Type: ApplicationFiled: February 7, 2001Publication date: August 8, 2002Inventors: Gil Sik Lee, Yoonyoung Jin, Kihong Kim