Abstract: A method of depositing a metal nitride material, formed by the decomposition of an organometallic precursor, useful as a barrier layer for an integrated circuit using a conducting metal. More particularly, the invention provides a method of depositing a niobium nitride layer on a substrate for use in copper metallization. In one aspect of the invention an organometallic precursor having the formula Nb(NRR′)5, the formula (NRR′)3Nb═NR″, or combinations thereof, is introduced into a processing chamber in the presence of a processing gas, such as ammonia, and the metal nitride film is deposited by the thermal or plasma enhanced decomposition of the precursor on a substrate. The deposited niobium nitride layer is then exposed to a plasma to remove contaminants, reduce the film's resistivity, and densify the film.

Abstract: The invention generally provides an apparatus and a method of removing metal oxides, particularly copper oxides and aluminum oxides, from a substrate surface. Primarily, the invention eliminates sputtering of copper oxide from the bottom of an interconnect feature onto the side walls of an interconnect feature, thereby preventing diffusion of the copper atom through the dielectric material and degradation of the device. The invention also eliminates sputtering of the copper oxides onto the chamber side walls that may eventually flake off and cause defects on the substrate. The method of reducing metal oxides from a substrate surface comprises placing the substrate within a plasma processing chamber, flowing a processing gas comprising hydrogen into the chamber, and maintaining a plasma of the processing gas within the chamber through inductive coupling.

Abstract: A cathode assembly having a pedestal and a detachable susceptor. Various contact assemblies containing a canted spring are utilized to make electrical connection between the pedestal and detachable susceptor. The canted spring has coils that are tilted in one direction and joined end to end to form a doughnut shape. Such a spring creates multiple parallel self-loading electrical connections via the turns of the spring. The turns act like electrical wires to ensure reliable RF electrical energy transfer. The canted spring contact of the present invention allows for flat contact between the pedestal and the chuck.

Abstract: An apparatus and method for actively controlling surface potential of an electrostatic chuck. The apparatus and method utilize a sensor and a control circuit. The sensor comprises an antenna on the chuck surface coupled to a field effect transistor (FET). The sensor produces a signal indicative of an electrical characteristic such as surface potential of the electrostatic chuck. The sensor signal provides feedback to the control circuit. The control circuit compares the sensor signal to a predetermined setpoint corresponding to a desired value of the surface potential. The control circuit provides a control signal to a power supply coupled to one or more chuck electrodes. The control signal causes the power supply to change the electrode voltage such that the resulting change in surface potential tends to null the difference between the sensor signal and the set point thus ensuring a constant chucking force.

Abstract: An apparatus and method for ex-situ measurement of electrostatic chuck performance parameters and correlating ex-situ measurements to in-situ chuck performance. The apparatus comprises a probe, a fixture, a data acquisition system and a controller. The fixture secures a probe head in a substantially fixed position relative to the chuck. The apparatus coordinates measurements of the chuck surface potential as a function of time with the voltage applied to the chuck electrodes. The method comprises fixing the chuck and probe head to the fixture, measuring an ex-situ performance parameter of the chuck, such as surface potential, and comparing the measured parameter to a predetermined in-situ performance profile. The ex-situ performance parameter measurement can be measured as a function of time and/or coordinated with a change in the voltage applied to the chuck electrodes.

Abstract: This invention relates to an apparatus comprising a Johnsen-Rahbek electrostatic chuck having a conductive stand-off pad and a method of fabricating the chuck. More specifically, the stand-off pad is made of a conductive polymeric material, such as a polyimide, which is disposed upon a semiconducting or partially conducting layer of the chuck. The polymeric material has a controlled resistivity within a range of about 10.sup.7 -10.sup.12 ohm-cm, which allows a wafer, or other workpiece, to be supported and retained upon the electrostatic chuck via the Johnsen-Rahbek effect.

Abstract: An electrostatic chuck including a body of ceramic and a metal backing portion for mounting the chuck directly to a metal pedestal and a process of manufacturing the electrostatic chuck using sintering. The electrostatic chuck contains a metal backing portion having at least one hole extending therethrough and the body of ceramic includes at least one portion extending through the hole.

Abstract: Method and apparatus for restoring a support surface of a substrate support to a pre-process condition. The method comprises the steps of providing a surrogate substrate on the degraded support surface, providing the surrogate substrate with a ground connection and establishing an electric field between the support surface and the surrogate substrate to remove accumulated charges in the support surface. The apparatus comprises a process chamber having a surrogate substrate on a the support surface and connected to ground. The surrogate substrate is a semiconductor wafer or a plate or sheet of metallic material. The ground connection is established by striking a plasma that contacts the surrogate substrate and an electrical ground reference. The electric field established between the support surface and the surrogate substrate "pushes" any accumulated charges out of the support surface. Removal of the accumulated charges improves and extends the chucking ability of the support surface.

Abstract: An apparatus for retaining a substrate and method of fabricating same. Specifically, a Johnsen-Rahbek effect electrostatic chuck comprising a chuck body, at least one electrode disposed within said chuck body and a barrier formed around said at least one electrode. The barrier is fabricated of a material selected from the group consisting of conductive materials and semiconductive materials and in one instance is an alloy of a material of which the electrode is fabricated. Alternately, the barrier is formed of a dielectric material that is not the same material of which the chuck body is fabricated. The resultant apparatus provides an electrostatic chuck that has a reduced charge accumulation effect at the electrode/chuck body interface. Reducing charge accumulation maintains the desired electrostatic chucking forces in such a device.

Abstract: Method for processing a semiconductor substrate in a chamber comprising the steps of establishing preprocess conditions in the chamber, executing a two-step plasma ignition, processing the substrate, executing a two-step plasma power down and executing a two-step substrate dechuck. A "softer" ignition of a plasma in two steps reduces DC bias spikes on the substrate. Reducing DC bias spikes reduces processing anomalies such as excess charge retention in the wafer after removing the chucking voltage and wafer repulsion and plasma discontinuity during processing. Additionally, the plasma ramp down after processing allows adequate time for discharging of residual charges in the wafer which allows for more reliable removal of the substrate from the chamber (dechucking).

Abstract: An electrostatic chuck including a body of ceramic material, a pair of electrodes embedded in the body of ceramic material, and two feedthroughs connected to each of the electrodes for receiving DC chucking voltage, RF biasing power, and electric heating current. The electrode structure simultaneously provides biasing, chucking and heating of a wafer that is retained by the chuck.

Abstract: Method and apparatus for retaining a semiconductor wafer upon a pedestal within semiconductor wafer processing equipment. An electrostatic chuck contains a wafer support having a surface. Embedded beneath the surface is a number of electrodes defining a number of chucking zones. The electrodes are energized by a number of non-zero voltages thereby creating a variable, non-zero chucking force in each of the chucking zones. The method of retaining a substrate to a substrate support consists of biasing at least one of the electrodes with a first voltage of a first magnitude and biasing each previously unbiased electrode with a voltage of unequal magnitude of the initially biased electrode and every other previously unbiased electrode such that a non-zero chucking force exists in every zone. Wafer chucking zones of differing force improve uniformity of heat transfer gas layer distribution.