Patents by Inventor Gilberto Medeiros Ribeiro

Gilberto Medeiros Ribeiro has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9478738
    Abstract: A memristor has a first electrode, a second electrode parallel to the first electrode, and a switching layer disposing between the first and second electrodes. The switching layer contains a conduction channel and a reservoir zone. The conduction channel has a Fermi glass material with a variable concentration of mobile ions. The reservoir zone is laterally disposed relative to the conduction channel, and functions as a source/sink of mobile ions for the conduction channel. In the switching operation, under the cooperative driving force of both electric field and thermal effects, the mobile ions are moved into or out of the laterally disposed reservoir zone to vary the concentration of the mobile ions in the conduction channel to change the conductivity of the Fermi glass material.
    Type: Grant
    Filed: September 4, 2015
    Date of Patent: October 25, 2016
    Assignee: Hewlett Packard Enterprise Development LP
    Inventors: Feng Miao, Jianhua Yang, John Paul Strachan, Wei Yi, Gilberto Medeiros Ribeiro, R. Stanley Williams
  • Publication number: 20160217850
    Abstract: A metal-insulator phase transition (MIT) flip-flop employs a selected one of a pair of bi-stable operating states to represent a logic state of the MIT flip-flop. The MIT flip-flop includes an MIT device having a current-controlled negative differential resistance (CC-NDR) to provide the pair of bi-stable operating states. A bi-stable operating state of the pair is capable of being selected by a programing voltage. Once the bi-stable operating state is selected, the bi-stable operating state is capable of being maintained by a bias voltage applied to the MIT device.
    Type: Application
    Filed: March 30, 2016
    Publication date: July 28, 2016
    Inventors: Gilberto Medeiros Ribeiro, Matthew D. Pickett
  • Patent number: 9293200
    Abstract: A multilayer crossbar memory array includes a number of layers. Each layer includes a top set of parallel lines, a bottom set of parallel lines intersecting the top set of parallel lines, and memory elements disposed at intersections between the top set of parallel lines and the bottom set of parallel lines. A top set of parallel lines from one of the layers is a bottom set of parallel lines for an adjacent one of the layers.
    Type: Grant
    Filed: August 30, 2010
    Date of Patent: March 22, 2016
    Assignee: Hewlett Packard Enterprise Development LP
    Inventors: Janice H. Nickel, Gilberto Medeiros Ribeiro, Jianhua Yang
  • Patent number: 9276204
    Abstract: A memristor with a channel region in thermal equilibrium with a containing region. The channel region has a variable concentration of mobile ions. The containing region, formed of stoichiometric crystalline material, contains and is in thermal equilibrium with the channel region.
    Type: Grant
    Filed: February 29, 2012
    Date of Patent: March 1, 2016
    Assignee: Hewlett Packard Enterprise Development LP
    Inventors: Feng Miao, Jianhua Yang, John Paul Strachan, Wei Yi, Gilberto Medeiros Ribeiro, R. Stanley Williams
  • Publication number: 20160043312
    Abstract: A memristor with dopant-compensated switching, the memristor having a bottom electrode, a top electrode, and an active region sandwiched between the bottom electrode and the top electrode. The active region is made up of an electrically insulating material and an electrically conducting material. The insulating material includes compensating dopants to partially or fully compensate for native dopants in the insulating material. Methods for making the memristor are also disclosed.
    Type: Application
    Filed: March 13, 2013
    Publication date: February 11, 2016
    Inventors: Jianhua Yang, Minxian Max Zhang, Gilberto Medeiros Ribeiro, R. Stanley Williams
  • Publication number: 20150380643
    Abstract: A memristor has a first electrode, a second electrode parallel to the first electrode, and a switching layer disposing between the first and second electrodes. The switching layer contains a conduction channel and a reservoir zone. The conduction channel has a Fermi glass material with a variable concentration of mobile ions. The reservoir zone is laterally disposed relative to the conduction channel, and functions as a source/sink of mobile ions for the conduction channel. In the switching operation, under the cooperative driving force of both electric field and thermal effects, the mobile ions are moved into or out of the laterally disposed reservoir zone to vary the concentration of the mobile ions in the conduction channel to change the conductivity of the Fermi glass material.
    Type: Application
    Filed: September 4, 2015
    Publication date: December 31, 2015
    Inventors: Feng Miao, Jianhua Yang, John Paul Strachan, Wei Yi, Gilberto Medeiros Ribeiro, R. Stanley Williams
  • Publication number: 20150380464
    Abstract: Memristor systems and method for fabricating memristor system are disclosed. In one aspect, a memristor includes a first electrode, a second electrode, and a junction disposed between the first electrode and the second electrode. The junction includes at least one layer such that each layer has a plurality of dopant sub-layers disposed between insulating sub-layers. The sub-layers are oriented substantially parallel to the first and second electrodes.
    Type: Application
    Filed: September 4, 2015
    Publication date: December 31, 2015
    Inventors: Matthew D. Pickett, Jianhua Yang, Gilberto Medeiros Ribeiro
  • Patent number: 9224821
    Abstract: In one example, a customizable nonlinear electrical device includes a first conductive layer, a second conductive layer, and a thin film metal-oxide layer sandwiched between the first conductive layer and the second conductive layer to form a first rectifying interface between the metal-oxide layer and the first conductive layer and a second rectifying interface between the metal-oxide layer and the second conductive layer. The metal-oxide layer includes an electrically conductive mixture of co-existing metal and metal oxides. A method forming a nonlinear electrical device is also provided.
    Type: Grant
    Filed: April 26, 2012
    Date of Patent: December 29, 2015
    Assignee: Hewlett Packard Enterprise Development LP
    Inventors: Minxian Max Zhang, Jianhua Yang, Gilberto Medeiros Ribeiro, R. Stanley Williams
  • Patent number: 9184382
    Abstract: Memristor systems and method for fabricating memristor system are disclosed. In one aspect, a memristor includes a first electrode, a second electrode, and a junction disposed between the first electrode and the second electrode. The junction includes at least one layer such that each layer has a plurality of dopant sub-layers disposed between insulating sub-layers. The sub-layers are oriented substantially parallel to the first and second electrodes.
    Type: Grant
    Filed: October 28, 2010
    Date of Patent: November 10, 2015
    Assignee: Hewlett-Packard Development Company, L.P.
    Inventors: Matthew D. Pickett, Jianhua Yang, Gilberto Medeiros Ribeiro
  • Patent number: 9165645
    Abstract: A memristor has a first electrode, a second electrode parallel to the first electrode, and a switching layer disposing between the first and second electrodes. The switching layer contains a conduction channel and a reservoir zone. The conduction channel has a Fermi glass material with a variable concentration of mobile ions. The reservoir zone is laterally disposed relative to the conduction channel, and functions as a source/sink of mobile ions for the conduction channel. In the switching operation, under the cooperative driving force of both electric field and thermal effects, the mobile ions are moved into or out of the laterally disposed reservoir zone to vary the concentration of the mobile ions in the conduction channel to change the conductivity of the Fermi glass material.
    Type: Grant
    Filed: June 24, 2011
    Date of Patent: October 20, 2015
    Assignee: Hewlett-Packard Development Company, L.P.
    Inventors: Feng Miao, Jianhua Yang, John Paul Strachan, Wei Yi, Gilberto Medeiros Ribeiro, R Stanley Williams
  • Patent number: 9082972
    Abstract: A heat mitigated bipolar resistive switch includes a BRS matrix sandwiched between first and second electrodes and a heat mitigator. The BRS matrix is to support bipolar switching of a conduction channel formed between the first and second electrodes through BRS matrix. The heat mitigator is to reduce heat in the BRS matrix generated during bipolar switching. The heat mitigator includes one or both of a parallel-connected NDR element to limit current flowing in the BRS matrix and a high thermal conductivity material to conduct the generated heat away from the BRS matrix above a predetermined elevated temperature.
    Type: Grant
    Filed: July 24, 2012
    Date of Patent: July 14, 2015
    Assignee: Hewlett-Packard Development Company, L.P.
    Inventors: John Paul Strachan, Gilberto Medeiros Ribeiro, Jianhua Yang, Wei Yi
  • Patent number: 9013177
    Abstract: A programmable analog filter includes a crossbar array with a number of junction elements and a filter circuit being implemented within the crossbar array. At least a portion of the junction elements form reprogrammable components within the filter circuit. A method for using a programmable analog filter is also provided.
    Type: Grant
    Filed: October 27, 2010
    Date of Patent: April 21, 2015
    Assignee: Hewlett-Packard Development Company, L.P.
    Inventors: John Paul Strachan, Philip J. Kuekes, Gilberto Medeiros Ribeiro
  • Publication number: 20150041751
    Abstract: In one example, a customizable nonlinear electrical device includes a first conductive layer, a second conductive layer, and a thin film metal-oxide layer sandwiched between the first conductive layer and the second conductive layer to form a first rectifying interface between the metal-oxide layer and the first conductive layer and a second rectifying interface between the metal-oxide layer and the second conductive layer. The metal-oxide layer includes an electrically conductive mixture of co-existing metal and metal oxides. A method forming a nonlinear electrical device is also provided.
    Type: Application
    Filed: April 26, 2012
    Publication date: February 12, 2015
    Inventors: Minxian Max Zhang, Jianhua Yang, Gilberto Medeiros Ribeiro, R. Stanley Williams
  • Patent number: 8921960
    Abstract: A memristor array includes a lower layer of crossbars, upper layer of crossbars intersecting the lower layer of crossbars, memristor cells interposed between intersecting crossbars, and pores separating adjacent memristor cells. A method forming a memristor array is also provided.
    Type: Grant
    Filed: July 27, 2012
    Date of Patent: December 30, 2014
    Assignee: Hewlett-Packard Development Company, L.P.
    Inventors: Jianhua Yang, Minxian Max Zhang, Gilberto Medeiros Ribeiro, R. Stanley Williams
  • Publication number: 20140346426
    Abstract: A memristor with a channel region in thermal equilibrium with a containing region. The channel region has a variable concentration of mobile ions. The containing region, formed of stoichiometric crystalline material, contains and is in thermal equilibrium with the channel region.
    Type: Application
    Filed: February 29, 2012
    Publication date: November 27, 2014
    Inventors: Feng Miao, Jianhua Yang, John Paul Strachan, Wei Yi, Gilberto Medeiros Ribeiro, R. Stanley Williams
  • Patent number: 8890106
    Abstract: A hybrid circuit comprises a nitride-based transistor portion and a memristor portion. The transistor includes a source and a drain and a gate for controlling conductance of a channel region between the source and the drain. The memristor includes a first electrode and a second electrode separated by an active switching region. The source or drain of the transistor forms one of the electrodes of the memristor.
    Type: Grant
    Filed: December 18, 2012
    Date of Patent: November 18, 2014
    Assignee: Hewlett-Packard Development Company, L.P.
    Inventors: Jianhua Yang, Gilberto Medeiros Ribeiro, Byung-Joon Choi, Stanley Williams
  • Patent number: 8885422
    Abstract: A hierarchical on-chip memory (400) includes an area distributed CMOS layer (310) comprising input/output functionality and volatile memory and via array (325, 330), the area distributed CMOS layer (310) configured to selectively address the via array (325, 330). A crossbar memory (305) overlies the area distributed CMOS layer (310) and includes programmable crosspoint devices (315) which are uniquely accessed through the via array (325, 330). A method for utilizing hierarchical on-chip memory (400) includes storing frequently rewritten data in a volatile memory and storing data which is not frequently rewritten in a non-volatile memory (305), where the volatile memory is contained within an area distributed CMOS layer (310) and the non-volatile memory (305) is formed over and accessed through the area distributed CMOS layer (310).
    Type: Grant
    Filed: June 12, 2009
    Date of Patent: November 11, 2014
    Assignee: Hewlett-Packard Development Company, L.P.
    Inventors: Gilberto Medeiros Ribeiro, R. Stanley Williams, Matthew D. Pickett
  • Patent number: 8860519
    Abstract: Methods and means related to an electronic circuit having an inductor and a memcapacitor are provided. Circuitry is formed upon a substrate such that an inductor and non-volatile memory capacitor are formed. Additional circuitry can be optionally formed on the substrate as well. The capacitive value of the memcapacitor is adjustable within a range by way of an applied programming voltage. The capacitive value of the memcapacitor is maintained until reprogrammed at some later time. Oscillators, phase-locked loops and other circuits can be configured using embodiments of the present teachings.
    Type: Grant
    Filed: October 15, 2009
    Date of Patent: October 14, 2014
    Assignee: Hewlett-Packard Development Company, L.P.
    Inventors: Gilberto Medeiros Ribeiro, John Paul Strachan
  • Patent number: 8854860
    Abstract: A metal-insulator transition (MIT) latch includes a first electrode spaced apart from a second electrode and an MIT material disposed between said first and second electrodes. The MIT material comprises a negative differential resistance (NDR) characteristic that exhibits a discontinuous resistance change at a threshold voltage or threshold current. Either the first or second electrode is electrically connected to an electrical bias source regulated to set a resistance phase of the MIT material.
    Type: Grant
    Filed: January 31, 2012
    Date of Patent: October 7, 2014
    Assignee: Hewlett-Packard Development Company, L.P.
    Inventors: Gilberto Medeiros Ribeiro, Matthew D. Pickett, R. Stanley Williams
  • Patent number: 8809158
    Abstract: A device (10) may include a semiconductor layer section (25) and a memory layer section (45) disposed above the semiconductor layer section (25). The semiconductor layer section (25) may include a processor (12; 412) and input/output block (16; 416), and the memory layer section (45) may include memristive memory (14; 300). A method of forming such device (10), and an apparatus (600) including such device (10) are also disclosed. Other embodiments are described and claimed.
    Type: Grant
    Filed: March 12, 2010
    Date of Patent: August 19, 2014
    Assignee: Hewlett-Packard Development Company, L.P.
    Inventors: Matthew D. Pickett, Jianhua Yang, Gilberto Medeiros Ribeiro