Patents by Inventor Giovanni Ferrara

Giovanni Ferrara has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11910623
    Abstract: To reduce the dark current ratio. A photoelectric conversion element 10 including an anode 16, a cathode 12, an active layer 14 provided between the anode and the cathode, and at least one electron transportation layer 13 provided between the active layer and the cathode, in which the electron transportation layer contains an insulating material and a semiconductor material; a difference between a work function of the electron transportation layer and a work function of the cathode is 0.88 eV or more; the active layer contains a p-type semiconductor material and an n-type semiconductor material; and a work function of the electron transportation layer (Wf1) and an energy level of a lowest occupied molecular orbital of the n-type semiconductor material (LUMO) satisfy the following Formula (2): |LUMO|?Wf1?0.06 eV??(2).
    Type: Grant
    Filed: September 26, 2019
    Date of Patent: February 20, 2024
    Assignee: SUMITOMO CHEMICAL COMPANY, LIMITED
    Inventors: Giovanni Ferrara, Miki Nishi
  • Patent number: 11877459
    Abstract: This light detecting element has a simple configuration, and is highly sensitive to a prescribed wavelength region. The light detecting element comprises a positive electrode, a negative electrode, and an active layer that is provided between the positive electrode and the negative electrode, and that includes a p-type semiconductor material and n-type semiconductor material. The thickness of the active layer is at least 800 nm. The weight ratio between the p-type semiconductor material and the n-type semiconductor material included in the active layer (p/n ratio) is at most 99/1. The work function of the negative electrode side surface in contact with the active layer is lower than the absolute value of the LUMO energy level of the n-type semiconductor material.
    Type: Grant
    Filed: July 26, 2019
    Date of Patent: January 16, 2024
    Assignee: SUMITOMO CHEMICAL COMPANY, LIMITED
    Inventors: Giovanni Ferrara, Takahiro Seike
  • Publication number: 20230201256
    Abstract: Provided are improved methods for grafting donor derived CDS 4+ cells in an organ transplant recipient comprising administration CD3+ cells together with a calcineurin inhibitor in an effective amount to reduce or prevent an immune system of the recipient from rejecting the CD3+ cells from the donor, thereby enabling the CD3+ cells of the donor to facilitate engraftment of the CDS 4+ cells from the donor. In certain embodiments, the effective amount of the calcineurin inhibitor provided to reduce or prevent the immune system of the recipient from rejecting the CD3+ cells of the donor is lower than an amount provided for protecting the organ of the donor from rejection by the immune system of the recipient.
    Type: Application
    Filed: May 19, 2021
    Publication date: June 29, 2023
    Applicant: MEDEOR THERAPEUTICS, INC.
    Inventor: Giovanni Ferrara
  • Publication number: 20230209844
    Abstract: Provided is a photodetector having a small dark current ratio. A photodetector includes a first electrode, a second electrode, and an active layer provided between the first electrode and the second electrode, the active layer contains a p-type semiconductor material and an n-type semiconductor material, the p-type semiconductor material contains a polymer having the highest occupied molecular orbital (HOMO) of ?5.45 eV or less, and the n-type semiconductor material contains a non-fullerene compound. It is preferable that the polymer contained in the p-type semiconductor material contains a constitutional unit DU having an electron donating property and a constitutional unit AU having an electron accepting property, and the non-fullerene compound contains a moiety DP having an electron donating property and a moiety AP having an electron accepting property.
    Type: Application
    Filed: March 22, 2021
    Publication date: June 29, 2023
    Applicant: SUMITOMO CHEMICAL COMPANY, LIMITED
    Inventors: Giovanni FERRARA, Takafumi ARAKI, Miho OZEKI
  • Publication number: 20230200094
    Abstract: A photodetector element includes: an anode; a cathode; and an active layer provided between the anode and the cathode and containing a p-type semiconductor material and an n-type semiconductor material, and a value obtained by subtracting the absolute value of energy level of HOMO of the p-type semiconductor material from the absolute value of the energy level of HOMO of the n-type semiconductor material is 0.35 or less. Further, the difference between the HOMO of the n-type semiconductor material and the HOMO of the p-type semiconductor material is preferably 0 to 0.10 eV, and the p-type semiconductor material is preferably a polymer compound containing a constituent unit represented by the following Formula (I). Ar1 and Ar2 represent a trivalent aromatic heterocyclic group optionally having a substituent or a trivalent aromatic carbocyclic group optionally having a substituent, and Z represents a group represented by Formulae (Z-1) to (Z-7).
    Type: Application
    Filed: March 22, 2021
    Publication date: June 22, 2023
    Applicant: SUMITOMO CHEMICAL COMPANY, LIMITED
    Inventors: Giovanni FERRARA, Takafumi ARAKI, Miho OZEKI
  • Publication number: 20230171973
    Abstract: To improve specific detectivity. A photodetector element 10 includes: an anode 12; a cathode 16; and an active layer 14 provided between the anode and the cathode and containing a p-type semiconductor material and an n-type semiconductor material, wherein a value (?EA+?EB) of a sum of a value (?EA) obtained by subtracting an absolute value of an energy level of HOMO of the p-type semiconductor material from an absolute value of an energy level of HOMO of the n-type semiconductor material and a value (?EB) obtained by subtracting an absolute value of an energy level of LUMO of the p-type semiconductor material from an absolute value of an energy level of LUMO of the n-type semiconductor material is in a range of more than 0 and less than 0.88.
    Type: Application
    Filed: March 22, 2021
    Publication date: June 1, 2023
    Applicant: SUMITOMO CHEMICAL COMPANY, LIMITED
    Inventors: Giovanni FERRARA, Takafumi ARAKI, Miho OZEKI
  • Publication number: 20210312156
    Abstract: Provided is a light detecting element having a low dark current. This light detecting element comprises: a first electrode and a second electrode; an active layer provided between the first electrode and the second electrode; and a hole transport layer provided between the second electrode and the active layer. The active layer contains an organic compound and has a thickness of 600 nm or more. The hole transport layer contains nanoparticles of metal oxide. The metal oxide includes one or more species selected from the group consisting of a molybdenum atom, a tungsten atom, and a nickel atom.
    Type: Application
    Filed: July 26, 2019
    Publication date: October 7, 2021
    Applicant: SUMITOMO CHEMICAL COMPANY, LIMITED
    Inventors: Giovanni FERRARA, Takahiro SEIKE
  • Publication number: 20210305522
    Abstract: This light detecting element has a simple configuration, and is highly sensitive to a prescribed wavelength region. The light detecting element comprises a positive electrode, a negative electrode, and an active layer that is provided between the positive electrode and the negative electrode, and that includes a p-type semiconductor material and n-type semiconductor material. The thickness of the active layer is at least 800 nm. The weight ratio between the p-type semiconductor material and the n-type semiconductor material included in the active layer (p/n ratio) is at most 99/1. The work function of the negative electrode side surface in contact with the active layer is lower than the absolute value of the LUMO energy level of the n-type semiconductor material.
    Type: Application
    Filed: July 26, 2019
    Publication date: September 30, 2021
    Applicant: SUMITOMO CHEMICAL COMPANY, LIMITED
    Inventors: Giovanni FERRARA, Takahiro SEIKE
  • Publication number: 20210305523
    Abstract: This light detecting element has a reduced dark current and improved external quantum efficiency. The light detecting element includes a positive electrode, a negative electrode, and an active layer that is provided between said positive electrode and said negative electrode, and that contains a p-type semiconductor material and an n-type semiconductor material. The thickness of the active layer is at least 800 nm. The value obtained by subtracting the absolute value of the LUMO of the n-type semiconductor material from the work function of the surface in contact with the negative electrode side surface of the active layer is 0.0 to 0.5 eV. The absolute value of the LUMO of the n-type semiconductor material is 2.0 to 10.0 eV.
    Type: Application
    Filed: July 26, 2019
    Publication date: September 30, 2021
    Applicant: SUMITOMO CHEMICAL COMPANY, LIMITED
    Inventors: Giovanni FERRARA, Takahiro SEIKE
  • Publication number: 20210257571
    Abstract: To reduce the dark current ratio. A photoelectric conversion element 10 including an anode 16, a cathode 12, an active layer 14 provided between the anode and the cathode, and at least one electron transportation layer 13 provided between the active layer and the cathode, in which the electron transportation layer contains an insulating material and a semiconductor material; a difference between a work function of the electron transportation layer and a work function of the cathode is 0.88 eV or more; the active layer contains a p-type semiconductor material and an n-type semiconductor material; and a work function of the electron transportation layer (Wf1) and an energy level of a lowest occupied molecular orbital of the n-type semiconductor material (LUMO) satisfy the following Formula (2): |LUMO|?Wf1?0.06 eV??(2).
    Type: Application
    Filed: September 26, 2019
    Publication date: August 19, 2021
    Applicant: SUMITOMO CHEMICAL COMPANY, LIMITED
    Inventors: Giovanni FERRARA, Miki NISHI
  • Patent number: 11069869
    Abstract: A photoelectric conversion element capable of reducing a specific dark current. In a photoelectric conversion element (10) including an anode (12), a cathode (16), and an active layer (14) provided between the anode and the cathode, the active layer contains a p-type semiconductor material having a band gap of 0.5 eV to 1.58 eV, and an n-type semiconductor material, the n-type semiconductor material is a C60 fullerene derivative, and on an image obtained by binarizing an image of the active layer observed by a transmission electron microscope, the junction length between a phase of the n-type semiconductor material and a phase of the p-type semiconductor material is 120 ?m to 170 ?m per square micrometer of the area of the binarized image.
    Type: Grant
    Filed: October 22, 2018
    Date of Patent: July 20, 2021
    Assignee: SUMITOMO CHEMICAL COMPANY, LIMITED
    Inventors: Giovanni Ferrara, Daisuke Inokuchi
  • Publication number: 20200381643
    Abstract: To improve detectivity of a photoelectric conversion element (10). A photoelectric conversion element including a pair of electrodes (12, 16), an active layer (14) provided between the pair of electrodes, and an intermediate layer (13. 15) provided between the active layer and at least one of the pair of electrodes, in which the intermediate layer has a surface that is in contact with the active layer, the surface having a surface roughness having an absolute value greater than 0.22 nm but smaller than 1.90 nm, and in which the active layer is not less than 350 nm but not more than 800 nm in thickness.
    Type: Application
    Filed: March 22, 2019
    Publication date: December 3, 2020
    Applicant: SUMITOMO CHEMICAL COMPANY, LIMITED
    Inventors: Takahiro SEIKE, Giovanni FERRARA
  • Publication number: 20200343465
    Abstract: A photoelectric conversion element capable of reducing a specific dark current. In a photoelectric conversion element (10) including an anode (12), a cathode (16), and an active layer (14) provided between the anode and the cathode, the active layer contains a p-type semiconductor material having a band gap of 0.5 eV to 1.58 eV, and an n-type semiconductor material, the n-type semiconductor material is a C60 fullerene derivative, and on an image obtained by binarizing an image of the active layer observed by a transmission electron microscope, the junction length between a phase of the n-type semiconductor material and a phase of the p-type semiconductor material is 120 ?m to 170 ?m per square micrometer of the area of the binarized image.
    Type: Application
    Filed: October 22, 2018
    Publication date: October 29, 2020
    Applicant: SUMITOMO CHEMICAL COMPANY, LIMITED
    Inventors: Giovanni FERRARA, Daisuke INOKUCHI
  • Publication number: 20200219216
    Abstract: The present invention allows a virtual online digital classroom to manage the audio and video streams of a teacher and students in a class. The teacher and students may start in a virtual “common room” where the teacher and students may all hear each other's audio and see each other's video streams. The teacher may move the students (and themselves) to two or more virtual breakout rooms. The teacher and/or students in a breakout room can only hear (and optionally only see) the teacher and/or the students in the same breakout room. In other words, the teacher and/or students in the breakout room cannot hear (and optionally cannot see) the teacher and/or students in the common room or in other breakout rooms. In preferred embodiments, the teacher may introduce different material to different breakout rooms and assess students during the breakout session.
    Type: Application
    Filed: September 19, 2018
    Publication date: July 9, 2020
    Inventors: Kenneth R. Davis, Eric Friedman, Mohamed Asif, Edoardo Giovanni Ferrara-Bardile, Gemma Artieda Gutierrez, Seth T. Ditchcreek
  • Patent number: 10621683
    Abstract: Disclosed is a control device capable of reducing CO2 emission and primary energy consumption, as well as energy supply cost, to lowest possible levels in optimal energy management. In repeatedly generating two or more energy balance candidates for each unit time for the outputs of the electric power grid and thermal accumulation unit based on combinations of varied values of the output ratios of a CHP, an RES, a thermal energy supply system, and an electrical storage unit and the consumption ratios of electric and thermal loads until the convergence of the evaluation values of the two or more candidates reaches a convergence criterion.
    Type: Grant
    Filed: November 5, 2014
    Date of Patent: April 14, 2020
    Assignee: YANMAR CO., LTD.
    Inventors: Alessandro Bellissima, Sandro Magnani, Mirko Andreini, Giovanni Ferrara, Fabio Esposito, Lorenzo Ferrari, Massimo Pentolini, Marcello De Chirico, Giacomo Petretto, Matteo Cantu, Sandra Scalari, Gianluca Gigliucci
  • Publication number: 20200063678
    Abstract: A diagnosis device for a multi-cylinder internal combustion engine having an exhaust turbocharger, the device configured to diagnose a fuel combustion state in each one of cylinders in the internal combustion engine. The diagnosis device includes: a rotational speed detector configured to output a signal corresponding to a rotational speed of the exhaust turbocharger or a signal correlated to fluctuation in the rotational speed of the exhaust turbocharger, and a fuel combustion state diagnosis unit configured to diagnose unevenness in the fuel combustion states of the cylinders through a frequency analysis involving a fast Fourier transformation of a frequency characteristic of a signal output from the rotational speed detector.
    Type: Application
    Filed: November 1, 2017
    Publication date: February 27, 2020
    Applicant: Yanmar Co., Ltd.
    Inventors: Go ASAI, Alessandro BELLISSIMA, Giovanni FERRARA, Giovanni VICHI, Michele BECCIANI, Isacco STIACCINI, Lorenzo FERRARI
  • Publication number: 20190181680
    Abstract: A control device optimizing evaluation of energy management in an in-plant energy network by exploiting both electric and thermal energy in such a manner as to achieve desirable overall performance. The control device, optimizing evaluation of energy management in an in-plant energy network, improves energy facility efficiency and is applicable in residential areas (e.g., general households), manufacturing industry areas (e.g., factories), and tertiary areas (e.g., office buildings, hotels, hospitals, schools, and swimming pools) for which it is desirable to reduce at least one of energy supply cost, CO2 (carbon dioxide) emission, and primary energy consumption.
    Type: Application
    Filed: August 9, 2016
    Publication date: June 13, 2019
    Applicant: Yanmar Co., Ltd.
    Inventors: Sandro MAGNANI, Alessandro BELLISSIMA, Mirko ANDREINI, Lorenzo FERRARI, Giovanni FERRARA, Fabio ESPOSITO, Michele BECCIANI
  • Patent number: 10168387
    Abstract: Embodiments relate to systems and methods for defect detection and localization in semiconductor chips. In an embodiment, a plurality of registers is arranged in a semiconductor chip. The particular number of registers can vary according to a desired level of localization, and the plurality of registers are geometrically distributed such that defect detection and localization over the entire chip area or a desired chip area, such as a central active region, is achieved in embodiments. In operation, a defect detection and localization routine can be run in parallel with other normal chip functions during a power-up or other phase. In embodiments, the registers can be multi-functional in that they can be used for other operational functions of the chip when not used for defect detection and localization, and vice-versa. Embodiments thereby provide fast, localized defect detection.
    Type: Grant
    Filed: July 3, 2012
    Date of Patent: January 1, 2019
    Assignee: Infineon Technologies Austria AG
    Inventors: Cheow Guan Lim, Giovanni Ferrara
  • Publication number: 20180322591
    Abstract: Disclosed is a control device capable of reducing CO2 emission and primary energy consumption, as well as energy supply cost, to lowest possible levels in optimal energy management. In repeatedly generating two or more energy balance candidates for each unit time for the outputs of the electric power grid and thermal accumulation unit based on combinations of varied values of the output ratios of a CHP, an RES, a thermal energy supply system, and an electrical storage unit and the consumption ratios of electric and thermal loads until the convergence of the evaluation values of the two or more candidates reaches a convergence criterion.
    Type: Application
    Filed: November 5, 2014
    Publication date: November 8, 2018
    Applicants: Yanmar Co., Ltd., Enel Produzione S.P.A.
    Inventors: Allessandro BELLISSIMA, Sandro MAGNANI, Mirko ANDREINI, Giovanni FERRARA, Fabio ESPOSITO, Lorenzo FERRARI, Massimo PENTOLINI, Marcello DE CHIRICO, Giacomo PETRETTO, Matteo CANTU, Sandra SCALARI, Gianluca GIGLIUCCI
  • Publication number: 20180301649
    Abstract: Provided is an organic photoelectric conversion element having improved durability. An organic photoelectric conversion element (10) comprises a layered structure (20) comprising a pair of electrodes (40) comprising a first electrode (42) and a second electrode (44), and an active layer (50) provided between the pair of electrodes, wherein at least one electrode of the pair of electrodes comprise an electrode containing a getter material (46) comprising an conductive material layer (46a) having interstitial spaces (46aa) which a first harmful substance contained in the layered structure permeates and at least one kind of the getter material (46b) which is capable of reacting with the first harmful substance, and the getter material is contained at least a part of the interstitial spaces.
    Type: Application
    Filed: October 4, 2016
    Publication date: October 18, 2018
    Applicant: SUMITOMO CHEMICAL COMPANY, LIMITED
    Inventors: Giovanni FERRARA, Takahiro SEIKE