Patents by Inventor Giuliana Morello

Giuliana Morello has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20170331247
    Abstract: Method for obtaining a laser diode (1) with vertical mirrors, includes the steps of providing (100) a substrate (2) having optical layers (4, 6, 8); performing (102) a first dry etching of said substrate (2), so as to get two opposite transversal facets (10) having a predetermined depth, which represent the lateral walls of a cavity (12); cleaning (104) the bottom of said cavity (12); depositing (106) a coating layer (52) on the whole substrate (2); performing (108) a second etching, so as to free the bottom of the cavity (12) from the coating layer (52); performing (110) a third deep etching of the bottom of the cavity (12); and removing (112) the coating layer (52), so as to obtain said diode (1) with transversal mirrors (10).
    Type: Application
    Filed: May 10, 2017
    Publication date: November 16, 2017
    Inventors: Guido Roggero, Giancarlo Meneghini, Giuliana Morello, Alessandro Stano, Marzia Rosso
  • Patent number: 8982921
    Abstract: An edge-emitting optical semiconductor structure has a substrate, an active multiple quantum well (MQW) region formed on the substrate, and a ridge waveguide extending between first and second etched end facets. The first etched end facet is disposed in a first window, while the second etched end facet is disposed in a second window. The first etched end facet extends between a pair of alcoves in the first window, and the second etched end facet extends between a pair of alcoves in the second window. An integrated device in which two such structures are provided has an H-shaped window where the two structures adjoin each other. The structure can be fabricated using a process that involves a first mask to form the ridge waveguide and then a second mask and an etching process to form the windows.
    Type: Grant
    Filed: February 7, 2013
    Date of Patent: March 17, 2015
    Assignee: Avago Technologies General IP (Singapore) Pte. Ltd.
    Inventors: Ruiyu Fang, Giammarco Rossi, Alessandro Stano, Giuliana Morello, Paola-Ida Gotta, Roberto Paoletti, Pietro Della Casa, Giancarlo Meneghini
  • Patent number: 8927306
    Abstract: An edge-emitting etched-facet optical semiconductor structure has a substrate, an active multiple quantum well (MQW) region formed on the substrate, and a ridge waveguide formed over the MQW region extending in substantially a longitudinal direction between a waveguide first etched end facet and a waveguide second etched end facet. A mask layer used to form windows in which the etched end facets are disposed consists of a single dielectric material disposed directly on the ridge waveguide. An optical coating consisting of no more than one layer of the same dielectric material of which the second mask is made is disposed directly on the second mask and disposed directly on the windows to coat the etched end facets.
    Type: Grant
    Filed: February 28, 2013
    Date of Patent: January 6, 2015
    Assignee: Avago Technologies General IP (Singapore) Pte. Ltd.
    Inventors: Ruiyu Fang, Giuliana Morello, Giammarco Rossi, Roberto Paoletti, Alessandro Stano, Giancarlo Meneghini
  • Patent number: 8582618
    Abstract: A surface-emitting semiconductor laser device that includes an edge-emitting laser formed in layers of semiconductor material disposed on a semiconductor substrate, a polymer material disposed on the substrate laterally adjacent the layers in which the edge-emitting laser is formed, a diffractive or refractive lens formed on an upper surface of the polymer material, a side reflector formed on an angled side reflector facet of the polymer material generally facing an exit end facet of the laser, and a lower reflector disposed on the substrate beneath the polymer material. Laser light passes out of the exit end facet and propagates through the polymer material before being reflected by the side reflector toward the lower reflector. The laser light is then re-reflected by the lower reflector towards the lens, which directs the laser light out the device in a direction that is generally normal to the upper surface of the substrate.
    Type: Grant
    Filed: January 18, 2011
    Date of Patent: November 12, 2013
    Assignee: Avago Technologies General IP (Singapore) Pte. Ltd.
    Inventors: Guido Alberto Roggero, Rui Yu Fang, Alessandro Stano, Giuliana Morello
  • Publication number: 20120195336
    Abstract: A surface-emitting semiconductor laser device is provided that includes an edge-emitting laser formed in various layers of semiconductor material disposed on a semiconductor substrate, a polymer material disposed on the substrate laterally adjacent the layers in which the edge-emitting laser is formed, and a reflector formed in or on an angled side facet of the polymer material generally facing an exit end facet of the laser. Laser light passes out of the exit end facet propagates through the polymer material before being reflected by the reflector out of the device in a direction that is generally normal to the upper surface of the substrate.
    Type: Application
    Filed: February 1, 2011
    Publication date: August 2, 2012
    Applicant: AVAGO TECHNOLOGIES FIBER IP (SINGAPORE) PTE. LTD.
    Inventors: Rui Yu Fang, Guido Alberto Roggero, Giuliana Morello, Roberto Paoletti, Michele Agresti
  • Publication number: 20120183007
    Abstract: A surface-emitting semiconductor laser device is provided that includes an edge-emitting laser formed in various layers of semiconductor material disposed on a semiconductor substrate, a polymer material disposed on the substrate laterally adjacent the layers in which the edge-emitting laser is formed, a diffractive or refractive lens formed in or on an upper surface of the polymer material, a side reflector formed on an angled side reflector facet of the polymer material generally facing an exit end facet of the laser, and a lower reflector disposed on the substrate beneath the polymer material. Laser light passes out of the exit end facet and propagates through the polymer material before being reflected by the side reflector toward the lower reflector. The laser light is then re-reflected by the lower reflector towards the lens, which directs the laser light out the device in a direction that is generally normal to the upper surface of the substrate.
    Type: Application
    Filed: January 18, 2011
    Publication date: July 19, 2012
    Applicant: AVAGO TECHNOLOGIES FIBER IP (SINGAPORE) PTE. LTD.
    Inventors: Guido Alberto Roggero, Rui Yu Fang, Alessandro Stano, Giuliana Morello
  • Publication number: 20050248775
    Abstract: An apparatus for monitoring deposition processes which includes: a holder member for holding a device exposed to the coating process, the device adapted to be activated during the position process to generate a radiation affected by the deposition process, a detector for detecting the radiation to produce a monitoring signal of the deposition process, and an optical propagation path associated with the holder member to propagate the radiation towards the detector. The detector is unexposed to the deposition process, which preferably occurs by causing the optical propagation path to the photodetector to include an integration sphere provided in the holder member.
    Type: Application
    Filed: December 29, 2004
    Publication date: November 10, 2005
    Inventors: Dario Re, Paolo Valenti, Giuliana Morello
  • Patent number: 5128538
    Abstract: An effusion source for epitaxial deposition plants wherein molecular vapor beams are directed towards a substrate to be grown in ultrahigh vacuum environment, which has a first tube, which is airtightly closed at one end by flanges allowing the passage of vapor inlet tubes and is equipped at the the other end with baffle plates and a nozzle for mixing vapors and shaping the molecular beam. A second tube, coaxially joined to the first tube, allows an interstice at ambient pressure and temperature to be obtained in the zone of the vapor mixing and molecular beam shaping, wherein a heating can be located.
    Type: Grant
    Filed: April 2, 1991
    Date of Patent: July 7, 1992
    Assignee: Cselt - Centro Studi e Laboratori Telecomunicazioni S.p.A.
    Inventors: Fernando Genova, Giuliana Morello