Abstract: Provided herein are approaches for angle control of neutral reactive species ion beams. In one approach, a workpiece processing apparatus may include a plasma source operable to generate a plasma within a plasma chamber enclosed by a chamber housing, and an extraction plate coupled to the chamber housing. The extraction plate may include a plurality of channels for delivering one or more radical beams to a workpiece, wherein each of the plurality of channels has a lengthwise axis oriented at a non-zero angle relative to a perpendicular extending from a main surface of the workpiece, wherein each channel of the plurality of channels has a channel length and a channel width, and wherein the channel width varies along the channel length.

Abstract: Disclosed is a semiconductor processing approach wherein a wafer twist is employed to increase etch rate, at select locations, along a hole or space end arc. By doing so, a finished hole may more closely resemble the shape of the incoming hole end. In some embodiments, a method may include providing an elongated contact hole formed in a semiconductor device, and etching the elongated contact hole while rotating the semiconductor device, wherein the etching is performed by an ion beam delivered at a non-zero angle relative to a plane defined by the semiconductor device. The elongated contact hole may be defined by a set of sidewalls opposite one another, and a first end and a second end connected to the set of sidewalls, wherein etching the elongated contact hole causes the elongated contact hole to change from an oval shape to a rectangular shape.

Abstract: Provided herein are approaches for angle control of neutral reactive species ion beams. In one approach, a workpiece processing apparatus may include a plasma source operable to generate a plasma within a plasma chamber enclosed by a chamber housing, and an extraction plate coupled to the chamber housing. The extraction plate may include a recombination array having a plurality of channels operable to direct one or more radical beams to a workpiece at a non-zero angle relative to a perpendicular extending from a main surface of the workpiece.

Abstract: Provided herein are approaches for angle control of neutral reactive species ion beams. In one approach, a workpiece processing apparatus may include a plasma source operable to generate a plasma within a plasma chamber enclosed by a chamber housing, and an extraction plate coupled to the chamber housing. The extraction plate may include a plurality of channels for delivering one or more radical beams to a workpiece, wherein each of the plurality of channels has a lengthwise axis oriented at a non-zero angle relative to a perpendicular extending from a main surface of the workpiece, wherein each channel of the plurality of channels has a channel length and a channel width, and wherein the channel width varies along the channel length.

Abstract: Disclosed is a semiconductor processing approach wherein a wafer twist is employed to increase etch rate, at select locations, along a hole or space end arc. By doing so, a finished hole may more closely resemble the shape of the incoming hole end. In some embodiments, a method may include providing an elongated contact hole formed in a semiconductor device, and etching the elongated contact hole while rotating the semiconductor device, wherein the etching is performed by an ion beam delivered at a non-zero angle relative to a plane defined by the semiconductor device. The elongated contact hole may be defined by a set of sidewalls opposite one another, and a first end and a second end connected to the set of sidewalls, wherein etching the elongated contact hole causes the elongated contact hole to change from an oval shape to a rectangular shape.

Abstract: An apparatus and method of processing a workpiece is disclosed, where a coating is applied to a workpiece and the workpiece is subsequently subjected to an etching process. These processes are performed by one semiconductor processing apparatus while the workpiece is scanned relative to the apparatus. A precursor is applied to the workpiece by the apparatus. The apparatus then uses plasma, heat or ultraviolet radiation to activate the precursor to form a coating. After the coating is applied, the apparatus is configured to perform the etching process. In certain embodiments, the etching process is a directional etching process.

Abstract: Disclosed is a semiconductor processing approach wherein a wafer twist is employed to increase etch rate, at select locations, along a hole or space end arc. By doing so, a finished hole may more closely resemble the shape of the incoming hole end. In some embodiments, a method may include providing an elongated contact hole formed in a semiconductor device, and etching the elongated contact hole while rotating the semiconductor device, wherein the etching is performed by an ion beam delivered at a non-zero angle relative to a plane defined by the semiconductor device. The elongated contact hole may be defined by a set of sidewalls opposite one another, and a first end and a second end connected to the set of sidewalls, wherein etching the elongated contact hole causes the elongated contact hole to change from an oval shape to a rectangular shape.

Abstract: An apparatus and method of processing a workpiece is disclosed, where a coating is applied to a workpiece and the workpiece is subsequently subjected to an etching process. These processes are performed by one semiconductor processing apparatus while the workpiece is scanned relative to the apparatus. A precursor is applied to the workpiece by the apparatus. The apparatus then uses plasma, heat or ultraviolet radiation to activate the precursor to form a coating. After the coating is applied, the apparatus is configured to perform the etching process. In certain embodiments, the etching process is a directional etching process.

Abstract: Disclosed herein are methods of removing material, such as processing byproducts from a semiconductor device. In one approach, the method includes providing a wafer adjacent a halo, wherein the wafer and the halo are disposed within a chamber, and wherein the wafer includes a first wafer edge and a second wafer edge, moving the wafer and the ion source relative to one another, and varying at least one of the following processing parameters as the ion source passes the first wafer edge or the second wafer edge: a scan speed, a temperature at the halo and the wafer, a gas flow rate of the ion source, and a power of the ion source.

Abstract: Disclosed is a semiconductor processing approach wherein a wafer twist is employed to increase etch rate, at select locations, along a hole or space end arc. By doing so, a finished hole may more closely resemble the shape of the incoming hole end. In some embodiments, a method may include providing an elongated contact hole formed in a semiconductor device, and etching the elongated contact hole while rotating the semiconductor device, wherein the etching is performed by an ion beam delivered at a non-zero angle relative to a plane defined by the semiconductor device. The elongated contact hole may be defined by a set of sidewalls opposite one another, and a first end and a second end connected to the set of sidewalls, wherein etching the elongated contact hole causes the elongated contact hole to change from an oval shape to a rectangular shape.

Abstract: Disclosed is a semiconductor processing approach wherein a wafer twist is employed to increase etch rate, at select locations, along a hole or space end arc. By doing so, a finished hole may more closely resemble the shape of the incoming hole end. In some embodiments, a method may include providing an elongated contact hole formed in a semiconductor device, and etching the elongated contact hole while rotating the semiconductor device, wherein the etching is performed by an ion beam delivered at a non-zero angle relative to a plane defined by the semiconductor device. The elongated contact hole may be defined by a set of sidewalls opposite one another, and a first end and a second end connected to the set of sidewalls, wherein etching the elongated contact hole causes the elongated contact hole to change from an oval shape to a rectangular shape.

Abstract: A workpiece processing apparatus allowing in situ cleaning of metal deposited formed on the extraction plate and in the plasma chamber is disclosed. The apparatus includes an extraction plate having an extraction aperture through which the sputtering material is passed. The apparatus also includes a sealed volume disposed within the plasma chamber which is in communication with a cleaning aperture on the extraction plate. The sealed volume is in communication with a cleaning gas, which is excited by the plasma in the plasma chamber, and can be used to clean the exterior surface of the extraction plate. The feed gas used in the plasma chamber can be selected from a sputtering species and the cleaning gas. Since the volume in the sealed volume is separated from the rest of the plasma chamber, the cleaning of the extraction plate and the cleaning of the plasma chamber may be performed independently.

Abstract: A method may include generating a plasma in a plasma chamber, the plasma comprising an etchant species and extracting a pulsed ion beam from the plasma chamber and directing the pulsed ion beam to a substrate, where the pulsed ion beam comprises an ON portion and an OFF portion. During the OFF portion the substrate may not be biased with respect to the plasma chamber, and the duration of the OFF portion may be less than a transit time of the etchant species from the plasma chamber to the substrate.

Abstract: A method may include generating a plasma in a plasma chamber, the plasma comprising an etchant species and extracting a pulsed ion beam from the plasma chamber and directing the pulsed ion beam to a substrate, where the pulsed ion beam comprises an ON portion and an OFF portion. During the OFF portion the substrate may not be biased with respect to the plasma chamber, and the duration of the OFF portion may be less than a transit time of the etchant species from the plasma chamber to the substrate.

Abstract: An apparatus to treat a substrate. The apparatus may include a reactive gas source having a reactive gas outlet disposed in a process chamber, the reactive gas outlet to direct a first reactive gas to the substrate; a plasma chamber coupled to the process chamber and including an extraction plate having an extraction aperture extending along a first direction, disposed within the process chamber and movable along a second direction perpendicular to the first direction between a first position facing the reactive gas source and a second position facing the extraction aperture; and a gas flow restrictor disposed between the reactive gas outlet and the extraction aperture, the gas flow restrictor defining a differential pumping channel between at least the plasma chamber and substrate stage.

Abstract: An apparatus to treat a substrate. The apparatus may include a reactive gas source having a reactive gas outlet disposed in a process chamber, the reactive gas outlet to direct a first reactive gas to the substrate; a plasma chamber coupled to the process chamber and including an extraction plate having an extraction aperture extending along a first direction, disposed within the process chamber and movable along a second direction perpendicular to the first direction between a first position facing the reactive gas source and a second position facing the extraction aperture; and a gas flow restrictor disposed between the reactive gas outlet and the extraction aperture, the gas flow restrictor defining a differential pumping channel between at least the plasma chamber and substrate stage.

Abstract: An apparatus to treat a substrate. The apparatus may include a reactive gas source having a reactive gas outlet disposed in a process chamber, the reactive gas outlet to direct a first reactive gas to the substrate; a plasma chamber coupled to the process chamber and including an extraction plate having an extraction aperture extending along a first direction, disposed within the process chamber and movable along a second direction perpendicular to the first direction between a first position facing the reactive gas source and a second position facing the extraction aperture; and a gas flow restrictor disposed between the reactive gas outlet and the extraction aperture, the gas flow restrictor defining a differential pumping channel between at least the plasma chamber and substrate stage.

Abstract: An apparatus to treat a substrate. The apparatus may include a reactive gas source having a reactive gas outlet disposed in a process chamber, the reactive gas outlet to direct a first reactive gas to the substrate; a plasma chamber coupled to the process chamber and including an extraction plate having an extraction aperture extending along a first direction, disposed within the process chamber and movable along a second direction perpendicular to the first direction between a first position facing the reactive gas source and a second position facing the extraction aperture; and a gas flow restrictor disposed between the reactive gas outlet and the extraction aperture, the gas flow restrictor defining a differential pumping channel between at least the plasma chamber and substrate stage.

Abstract: In one embodiment according to the invention, there is disclosed a method of identifying a source of a vacuum quality problem in a vacuum environment associated with a tool. The method comprises gathering and storing vacuum environment data; identifying an anomaly within the vacuum environment; determining a tool component operating state when the anomaly likely occurred; and determining the source of the vacuum quality problem based on a state of the vacuum environment when the anomaly likely occurred and the tool component operating state when the anomaly likely occurred.