Abstract: In one aspect, a semiconductor device includes a p-region and an n-region. The p-region includes a first Group IV semiconductor that has a bandgap and is doped with a p-type dopant, and a first region of local crystal modifications inducing localized strain that increases the bandgap of the first Group IV semiconductor and creates a conduction band energy barrier against transport of electrons across the p-region. The n-region includes a second Group IV semiconductor that has a bandgap and is doped with an n-type dopant, and a second region of local crystal modifications inducing localized strain that increases the bandgap of the second Group IV semiconductor and creates a valence band energy barrier against transport of holes across the n-region.

Abstract: In one aspect, a first region that includes a first Group IV semiconductor that has a bandgap and is doped with a first dopant of a first electrical conductivity type is formed. A pattern is created. The pattern controls formation of local crystal modifications in the first Group IV semiconductor in an array. An array of local crystal modifications is formed in the first Group IV semiconductor in accordance with the pattern. The local crystal modifications induce overlapping strain fields that increase the bandgap of the first Group IV semiconductor, create an energy band barrier against transport of minority carriers across the first region. A second region that includes a second Group IV semiconductor that has a bandgap and is doped with a second dopant of a second electrical conductivity type opposite the first conductivity type is formed. Semiconductor devices formed in accordance with this method also are described.

Abstract: The present disclosure relates to an optical cavity, comprising a first non-concave reflector positioned at a first end of the optical cavity and a second non-concave reflector positioned at a second end of the optical cavity that receives and reflects light reflected from the first non-concave reflector. The first non-concave reflector is configured to focus light that reflects off of the reflector back upon itself to avoid diffraction losses from the optical cavity. In one embodiment of the invention, the first non-concave reflector includes a layer of material that has a thickness that vanes as a function of radial distance out from an axial center of the layer. In another embodiment of the invention, the first non-concave reflector includes a layer of material that has an index of refraction that varies as a function of radial distance out from an axial center of the layer.

Abstract: A demultiplexer system having an interleaver for dividing the incoming wavelength-division multiplexed (WDM) signal into interleaved WDM signals and a single demultiplexing device for demultiplexing the de-interleaved WDM signals into single-channel signals is disclosed. Because a single demultiplexing device is used, size and cost savings can be realized.

Abstract: An interleaver implemented using a directional separator and Bragg grating sections is disclosed. Wavelength division multiplexed (WDM) signal enters the interleaver and is directed from the input medium to a first output medium. The first output medium includes Bragg grating segments designed to reflect alternating channels of the WDM signal. The reflected channels are directed to a second output medium.

Abstract: An optical demultiplexer is implemented using a dispersive means and a photodetector array. An incoming wave division multiplexed (WDM) signal is dispersed into its component optical channels, and each optical channel is converted into its corresponding electrical signal. Outputs of the optical multiplexer are electrical signals.

Abstract: The present invention reduces multimoding of light generated by lasers. An asymmetric dispersion enhancer is included in a laser cavity to increase the asymmetric dispersion of the light amplified in the cavity. As a result, the side modes of the light passing through the cavity are asymmetrically disposed about the fundamental mode and, therefore, are amplified less in the cavity. Consequently, multimoding of the light is better suppressed.

Abstract: The present disclosure relates to an optical cavity, comprising a first non-concave reflector positioned at a first end of the optical cavity and a second non-concave reflector positioned at a second end of the optical cavity that receives and reflects light reflected from the first non-concave reflector. The first non-concave reflector is configured to focus light that reflects off of the reflector back upon itself to avoid diffraction losses from the optical cavity. In one embodiment of the invention, the first non-concave reflector includes a layer of material that has a thickness that vanes as a function of radial distance out from an axial center of the layer. In another embodiment of the invention, the first non-concave reflector includes a layer of material that has an index of refraction that varies as a function of radial distance out from an axial center of the layer.

Abstract: A thermal ink jet print head is provided having a new and improved barrier design. Two barriers are provided for each resistor, the barriers partially surrounding the resistor. The barriers are spaced apart to provide ink feed channels to the resistor and are arranged to impart angular momentum to the ink relative to the resistor during refill on bubble collapse.