Abstract: An apparatus and method for charging a gas storage and dispensing vessel with gas to a predetermined pressure level, e.g., a gas to be employed in a semiconductor manufacturing operation such as a hydride, halide or organometallic reagent gas. In the gas charging, a source gas is liquefied, e.g., in a cryotrap, and then gasified in closed flow communication with the vessel to introduce the gas thereinto, and such liquefaction/gasification steps are carried out alternatively and repetitively, to charge the vessel in a step-wise, progressive fashion with gas, until a full fill state is achieved, with the contained gas at the predetermined pressure level.

Abstract: A gas recovery system for improving the efficiency of abatement and/or implementing reclamation and reuse of unused feed materials in effluent of a semiconductor manufacturing facility, especially in instances in which substantial portions of feed material are unused. The effluent is treated to reversibly capture the unused feed material, e.g., at a capture locus such as a physical adsorbent, cold finger, cryotrap, heat exchanger/condenser, membrane separation unit, filter, etc., and the captured unused feed material then is released from the capture locus and processed for such abatement and/or reclamation and reuse.

Abstract: A channelized sorbent material comprises porous sorbent particles characterized by an average pore diameter. Each sorbent particle has at least one interior channel of an average transverse dimension (i.e. transverse diameter) that is at least ten times larger than the average pore diameter of the porous sorbent particle. The interior channel may constitute a single cylindrical through-bore in the sorbent particle, or alternatively, an array of intersecting or non-intersecting channels. The porous sorbent particles preferably comprise bead activated carbon particles. Such channelized sorbent material is particular useful as sorbent media in an adsorption-desorption apparatus for storage and dispensing of a sorbable fluid.

Abstract: A system and process for utilization and disposition of a supercritical fluid composition, in which a supercritical fluid (SCF) composition is used in an SCF-using process facility such as a semiconductor manufacturing plant. The supercritical fluid composition is withdrawn from the process facility containing at least one component that is extraneous with respect to the further disposition of the supercritical fluid composition. The withdrawn supercritical fluid composition is converted to a pressurized liquid, which is treated to at least partially remove the extraneous component(s) therefrom. The extraneous component(s)-depleted pressurized liquid in its further disposition can be reconverted to a supercritical state for recycle to the SCF-using process facility, or it can be gasified and discharged to the atmosphere in the case of supercritical fluids such as CO2.

Abstract: A capacity increase and/or pressure decrease of gas in a gas storage and dispensing vessel is achieved by use of a physical adsorbent having sorptive affinity for the gas. Such approach enables conventional high pressure gas cylinders to be redeployed with contained sorbent, to achieve substantial enhancement of safety and capacity.

Abstract: An improved, non-plasma, static method for removing accumulated films and solid residues from interior surfaces of processing chambers used in thermal or plasma CVD treatment processes. The method includes introducing a reactive substance into a processing chamber while adjusting the pressure within the processing chamber to a predetermined level. The flow of the reactive substance into the processing chamber is terminated and the reactive substance is retained in the processing chamber to react with solid residues and form reaction products, following which the reaction products are subsequently removed from the processing chamber. Advantageously, terminating the flow of reactive substance into the processing chamber results in etching action that more effectively utilizes the cleaning agent and generates less hazardous materials.

Abstract: A channelized sorbent material comprises porous sorbent particles characterized by an average pore diameter. Each sorbent particle has at least one interior channel of an average transverse dimension (i.e. transverse diameter) that is at least ten times larger than the average pore diameter of the porous sorbent particle. The interior channel may constitute a single cylindrical through-bore in the sorbent particle, or alternatively, an array of intersecting or non-intersecting channels. The porous sorbent particles preferably comprise bead activated carbon particles. Such channelized sorbent material is particular useful as sorbent media in an adsorption-desorption apparatus for storage and dispensing of a sorbable fluid.

Abstract: A gas supply system including a gas cabinet defining an enclosure including therein a gas dispensing manifold and one or more adsorbent-based gas storage and dispensing vessels mounted in the enclosure and joined in gas flow communication with the gas dispensing manifold. The enclosure may be maintained under low or negative pressure conditions for enhanced safety in the event of leakage of gas from the gas storage and dispensing vessel(s) in the enclosure. The gas supply system may be coupled to a gas-consuming unit in a semiconductor manufacturing facility, e.g., an ion implanter, an etch chamber, or a chemical vapor deposition reactor.

Abstract: An ion implantation process system, including an ion implanter apparatus for carrying out an ion implantation process. A supply of source gas for the ion implantation process is arranged to flow to the ion implanter apparatus, which discharges an effluent gas stream including ionization products of the source gas during the ion implantation process. The system includes an effluent abatement apparatus for removing hazardous effluent species from the effluent gas stream. The source gas may be furnished from a low pressure gas source in which the source gas is sorptively retained in a vessel on a sorbent medium having affinity for the source gas, and desorbed for dispensing to the process system. A novel scrubbing composition may be employed for effluent treatment, and the scrubbing composition breakthrough of scrubbable component may be monitored with a device such as a quartz microbalance monitor.

Abstract: A capacity increase and/or pressure decrease of gas in a gas storage and dispensing vessel is achieved by use of a physical adsorbent having sorptive affinity for the gas. Such approach enables conventional high pressure gas cylinders to be redeployed with contained sorbent, to achieve substantial enhancement of safety and capacity.

Abstract: A fluid storage and dispensing system including a fluid storage and dispensing vessel enclosing an interior volume for holding a fluid. The vessel includes a fluid discharge port for discharging fluid from the vessel. A pressure regulating element in the interior volume of the fluid storage and dispensing vessel is arranged to flow fluid therethrough to the fluid discharge port at a set pressure for dispensing thereof. A controller external of the fluid storage and dispensing vessel is arranged to transmit a control input into the vessel to cause the pressure regulating element to change the set pressure of the fluid flowed from the pressure regulating element to the fluid discharge port. By such arrangement, the respective storage and dispensing operations can have differing regulator set point pressures, as for example a subatmospheric pressure set point for storage and a superatmospheric pressure set point for dispensing.

Abstract: An ion implantation process system, including an ion implanter apparatus for carrying out an ion implantation process. A supply of source gas for the ion implantation process is arranged to flow to the ion implanter apparatus, which discharges an effluent gas stream including ionization products of the source gas during the ion implantation process. The system includes an effluent abatement apparatus for removing hazardous effluent species from the effluent gas stream. The source gas may be furnished from a low pressure gas source in which the source gas is sorptively retained in a vessel on a sorbent medium having affinity for the source gas, and desorbed for dispensing to the process system. A novel scrubbing composition may be employed for effluent treatment, and the scrubbing composition breakthrough of scrubbable component may be monitored with a device such as a quartz microbalance monitor.

Abstract: A gas supply system including a gas cabinet defining an enclosure including therein a gas dispensing manifold and one or more adsorbent-based gas storage and dispensing vessels mounted in the enclosure and joined in gas flow communication with the gas dispensing manifold. The enclosure may be maintained under low or negative pressure conditions for enhanced safety in the event of leakage of gas from the gas storage and dispensing vessel(s) in the enclosure. The gas supply system may be coupled to a gas-consuming unit in a semiconductor manufacturing facility, e.g., an ion implanter, an etch chamber, or a chemical vapor deposition reactor.

Abstract: A gas supply system including a gas cabinet defining an enclosure including therein a gas dispensing manifold and one or more adsorbent-based gas storage and dispensing vessels mounted in the enclosure and joined in gas flow communication with the gas dispensing manifold. The enclosure may be maintained under low or negative pressure conditions for enhanced safety in the event of leakage of gas from the gas storage and dispensing vessel(s) in the enclosure. The gas supply system may be coupled to a gas-consuming unit in a semiconductor manufacturing facility, e.g., an ion implanter, an etch chamber, or a chemical vapor deposition reactor.

Abstract: A fluid storage and dispensing system including a fluid storage and dispensing vessel enclosing an interior volume for holding a fluid. The vessel includes a fluid discharge port for discharging fluid from the vessel. A pressure regulating element in the interior volume of the fluid storage and dispensing vessel is arranged to flow fluid therethrough to the fluid discharge port at a set pressure for dispensing thereof. A controller external of the fluid storage and dispensing vessel is arranged to transmit a control input into the vessel to cause the pressure regulating element to change the set pressure of the fluid flowed from the pressure regulating element to the fluid discharge port. By such arrangement, the respective storage and dispensing operations can have differing regulator set point pressures, as for example a subatmospheric pressure set point for storage and a superatmospheric pressure set point for dispensing.

Abstract: A fluid storage and dispensing system including a fluid storage and dispensing vessel enclosing an interior volume for holding a fluid. The vessel includes a fluid discharge port for discharging fluid from the vessel. A pressure regulating element in the interior volume of the fluid storage and dispensing vessel is arranged to flow fluid therethrough to the fluid discharge port at a set pressure for dispensing thereof. A controller external of the fluid storage and dispensing vessel is arranged to transmit a control input into the vessel to cause the pressure regulating element to change the set pressure of the fluid flowed from the pressure regulating element to the fluid discharge port. By such arrangement, the respective storage and dispensing operations can have differing regulator set point pressures, as for example a subatmospheric pressure set point for storage and a super atmospheric pressure set point for dispensing.

Abstract: A gas storage and dispensing system comprising a vessel for holding a gas at a desired pressure. The vessel has a gas pressure regulator in its interior volume, to maintain pressure of dispensed gas at a desired pressure determined by the set point of the regulator. A second gas pressure regulator may be joined in series gas flow communication with the first gas pressure regulator, with the second gas pressure regulator being in initial contact with gas that is dispensed prior to its flow through the first gas pressure regulator, and with the set point pressure of the second gas pressure regulator being at least twice the set point pressure of the first gas pressure regulator.

Abstract: A sensor device for detecting the presence of a gas species in a gas environment susceptible to the presence of same. The sensor device may include a piezoelectric crystal coated with a sensor material having adsorptive affinity for the gas species, with an electric oscillator arranged for applying an oscillating electric field to the piezoelectric crystal to generate an output frequency therefrom indicative of the presence of the gas species when present in the gas environment, when the gas environment is exposed to the piezoelectric crystal. Another aspect of the invention involves a porous polymeric material that may be employed as a sensor material on a piezoelectric crystal sensor device, as well as a quartz microbalance holder that enables reactor gas monitoring. The sensor device alternatively may comprise an optical sensor arranged in a non-contaminating fashion in relation to the gas environment being monitored.

Abstract: A process for fabricating an electronic device structure on or in a substrate. A storage and dispensing vessel is provided, containing a solid-phase physical sorbent medium having physically adsorbed thereon a fluid for fabrication of the electronic device structure, e.g., a source fluid for a material constituent of the electronic device structure, or a reagent such as an etchant or mask material which is utilized in the fabrication of the electronic device structure but does not compose or form a material constituent of the electronic device structure. In the process, the source fluid is desorbed from the physical sorbent medium and dispensing source fluid from the storage and dispensing vessel, and contacted with the substrate, under conditions effective to utilize the material constituent on or in the substrate.

Abstract: A piezoelectric gas sensing device, comprising: (a) a piezoelectric element arranged for gas sensing exposure to a gas environment; (b) a layer of a gas-retentive support material on the piezoelectric element which is retentively effective for a gas component potentially present in the gas environment; and (c) a gas-interactive material associated with the retentive support material, and sorptively effective to form a solid interaction product in interaction with the gas component potentially present in the gas environment, with the solid interaction product imparting a changed frequency response to the piezoelectric gas sensing device, in relation to a corresponding piezoelectric gas sensing device in the absence of the solid interaction product resulting from presence of the gas component in the gas environment. The device can be utilized to detect the presence and/or concentration of a gas species such as a hydride, hydrocarbon, silane, etc. in the fluid being monitored by the device.