Patents by Inventor Gonzalo Monroy

Gonzalo Monroy has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20200006036
    Abstract: Embodiments described herein relate to apparatus and methods for performing electron beam etching process. In one embodiment, a method of etching a substrate includes delivering a process gas to a process volume of a process chamber, applying a RF power to an electrode formed from a high secondary electron emission coefficient material disposed in the process volume, generating a plasma comprising ions in the process volume, bombarding the electrode with the ions to cause the electrode to emit electrons and form an electron beam, applying a negative DC power to the electrode, accelerating electrons emitted from the bombarded electrode toward a substrate disposed in the process chamber, and etching the substrate with the accelerated ions.
    Type: Application
    Filed: April 22, 2019
    Publication date: January 2, 2020
    Inventors: Yue GUO, Yang YANG, Kartik RAMASWAMY, Kenneth S. COLLINS, Steven LANE, Gonzalo MONROY, Lucy Zhiping CHEN
  • Publication number: 20190393053
    Abstract: Embodiments described herein relate to apparatus for performing electron beam reactive plasma etching (EBRPE). In one embodiment, an apparatus for performing EBRPE processes includes an electrode formed from a material having a high secondary electron emission coefficient. In another embodiment, an electrode is movably disposed within a process volume of a process chamber and capable of being positioned at a non-parallel angle relative to a pedestal opposing the electrode. In another embodiment, a pedestal is movably disposed with a process volume of a process chamber and capable of being positioned at a non-parallel angle relative to an electrode opposing the pedestal. Electrons emitted from the electrode are accelerated toward a substrate disposed on the pedestal to induce etching of the substrate.
    Type: Application
    Filed: June 14, 2019
    Publication date: December 26, 2019
    Inventors: Yang YANG, Kartik RAMASWAMY, Kenneth S. COLLINS, Steven LANE, Gonzalo MONROY, Lucy Zhiping CHEN, Yue GUO
  • Publication number: 20190228970
    Abstract: Methods for forming a diamond like carbon layer with desired film density, mechanical strength and optical film properties are provided. In one embodiment, a method of forming a diamond like carbon layer includes generating an electron beam plasma above a surface of a substrate disposed in a processing chamber, and forming a diamond like carbon layer on the surface of the substrate. The diamond like carbon layer is formed by an electron beam plasma process, wherein the diamond like carbon layer serves as a hardmask layer in an etching process in semiconductor applications. The diamond like carbon layer may be formed by bombarding a carbon containing electrode disposed in a processing chamber to generate a secondary electron beam in a gas mixture containing carbon to a surface of a substrate disposed in the processing chamber, and forming a diamond like carbon layer on the surface of the substrate from elements of the gas mixture.
    Type: Application
    Filed: April 1, 2019
    Publication date: July 25, 2019
    Inventors: Yang YANG, Lucy CHEN, Jie ZHOU, Kartik RAMASWAMY, Kenneth S. COLLINS, Srinivas D. NEMANI, Chentsau YING, Jingjing LIU, Steven LANE, Gonzalo MONROY, James D. CARDUCCI
  • Publication number: 20190221437
    Abstract: Embodiments described herein relate to apparatus and methods for performing electron beam reactive plasma etching (EBRPE). In one embodiment, an apparatus for performing EBRPE processes includes an electrode formed from a material having a high secondary electron emission coefficient. In another embodiment, methods for etching a substrate include generating a plasma and bombarding an electrode with ions from the plasma to cause the electrode to emit electrons. The electrons are accelerated toward a substrate to induce etching of the substrate.
    Type: Application
    Filed: January 3, 2019
    Publication date: July 18, 2019
    Inventors: Yang YANG, Kartik RAMASWAMY, Kenneth S. COLLINS, Steven LANE, Gonzalo MONROY, Lucy Zhiping CHEN, Yue GUO
  • Patent number: 10249495
    Abstract: Methods for forming a diamond like carbon layer with desired film density, mechanical strength and optical film properties are provided. In one embodiment, a method of forming a diamond like carbon layer includes generating an electron beam plasma above a surface of a substrate disposed in a processing chamber, and forming a diamond like carbon layer on the surface of the substrate. The diamond like carbon layer is formed by an electron beam plasma process, wherein the diamond like carbon layer serves as a hardmask layer in an etching process in semiconductor applications. The diamond like carbon layer may be formed by bombarding a carbon containing electrode disposed in a processing chamber to generate a secondary electron beam in a gas mixture containing carbon to a surface of a substrate disposed in the processing chamber, and forming a diamond like carbon layer on the surface of the substrate from elements of the gas mixture.
    Type: Grant
    Filed: June 28, 2016
    Date of Patent: April 2, 2019
    Assignee: Applied Materials, Inc.
    Inventors: Yang Yang, Lucy Chen, Jie Zhou, Kartik Ramaswamy, Kenneth S. Collins, Srinivas D. Nemani, Chentsau Ying, Jingjing Liu, Steven Lane, Gonzalo Monroy, James D. Carducci
  • Publication number: 20190057862
    Abstract: A method of forming a transparent carbon layer on a substrate is provided. The method comprises generating an electron beam plasma above a surface of a substrate positioned over a first electrode and disposed in a processing chamber having a second electrode positioned above the first electrode. The method further comprises flowing a hydrocarbon-containing gas mixture into the processing chamber, wherein the second electrode has a surface containing a secondary electrode emission material selected from a silicon-containing material and a carbon-containing material. The method further comprises applying a first RF power to at least one of the first electrode and the second electrode and forming a transparent carbon layer on the surface of the substrate.
    Type: Application
    Filed: August 6, 2018
    Publication date: February 21, 2019
    Inventors: Yang YANG, Eswaranand VENKATASUBRAMANIAN, Kartik RAMASWAMY, Kenneth S. COLLINS, Steven LANE, Gonzalo MONROY, Lucy Zhiping CHEN, Yue GUO
  • Publication number: 20170372899
    Abstract: Methods for forming a diamond like carbon layer with desired film density, mechanical strength and optical film properties are provided. In one embodiment, a method of forming a diamond like carbon layer includes generating an electron beam plasma above a surface of a substrate disposed in a processing chamber, and forming a diamond like carbon layer on the surface of the substrate. The diamond like carbon layer is formed by an electron beam plasma process, wherein the diamond like carbon layer serves as a hardmask layer in an etching process in semiconductor applications. The diamond like carbon layer may be formed by bombarding a carbon containing electrode disposed in a processing chamber to generate a secondary electron beam in a gas mixture containing carbon to a surface of a substrate disposed in the processing chamber, and forming a diamond like carbon layer on the surface of the substrate from elements of the gas mixture.
    Type: Application
    Filed: June 28, 2016
    Publication date: December 28, 2017
    Inventors: Yang YANG, Lucy CHEN, Jie ZHOU, Kartik RAMASWAMY, Kenneth S. COLLINS, Srinivas D. NEMANI, Chentsau YING, Jingjing LIU, Steven LANE, Gonzalo MONROY, James D. CARDUCCI
  • Publication number: 20070119546
    Abstract: A plasma immersion ion implantation reactor for implanting a species into a workpiece includes an enclosure which has a side wall and a ceiling defining a chamber, and a workpiece support pedestal within the chamber for supporting a workpiece having a surface layer into which the species are to be ion implanted, the workpiece support pedestal facing an interior surface of the ceiling so as to define therebetween a process region extending generally across the diameter of the wafer support pedestal. The reactor further includes an RF plasma source power generator connected across the ceiling or the sidewall and the workpiece support pedestal for capacitively coupling RF source power into the chamber. A gas distribution apparatus is provided for furnishing process gas into the chamber and a supply of process gas is provided for furnishing to the gas distribution devices a process gas containing the species.
    Type: Application
    Filed: November 15, 2006
    Publication date: May 31, 2007
    Inventors: Kenneth Collins, Hiroji Hanawa, Kartik Ramaswamy, Andrew Nguyen, Amir Al-Bayati, Biagio Gallo, Gonzalo Monroy
  • Publication number: 20060073683
    Abstract: A method of ion implanting a species in a workpiece to a selected ion implantation profile depth includes placing a workpiece having a semiconductor material on an electrostatic chuck in or near a processing region of a plasma reactor chamber and applying a chucking voltage to the electrostatic chuck. The method further includes introducing into the chamber a precursor gas including a species to be ion implanted in the workpiece and applying an RF bias to the electrostatic chuck, the RF bias having a bias level corresponding to the ion implantation profile depth.
    Type: Application
    Filed: November 21, 2005
    Publication date: April 6, 2006
    Inventors: Kenneth Collins, Hiroji Hanawa, Kartik Ramaswamy, Andrew Nguyen, Amir Al-Bayati, Biagio Gallo, Gonzalo Monroy
  • Publication number: 20050051272
    Abstract: A method for implanting ions in a surface layer of a workpiece includes placing the workpiece on a workpiece support in a chamber with the surface layer being in facing relationship with a ceiling of the chamber, thereby defining a processing zone between the workpiece and the ceiling, and introducing into the chamber a process gas which includes the species to be implanted in the surface layer of the workpiece. The method further includes generating from the process gas a plasma by inductively coupling RF source power into the processing zone from an RF source power generator through an inductively coupled RF power applicator, and applying an RF bias from an RF bias generator to the workpiece support.
    Type: Application
    Filed: August 22, 2003
    Publication date: March 10, 2005
    Inventors: Kenneth Collins, Hiroji Hanawa, Kartik Ramaswamy, Andrew Nguyen, Amir Al-Bayati, Biagio Gallo, Gonzalo Monroy
  • Publication number: 20050051271
    Abstract: A system for processing a workpiece includes a plasma immersion implantation reactor with an enclosure comprising a side wall and a ceiling and defining a chamber, and a workpiece support pedestal within the chamber having a workpiece support surface facing the ceiling and defining a process region extending generally across the wafer support pedestal. The reactor includes a gas distribution apparatus for introducing a process gas containing a first species to be ion implanted into a surface layer of the workpiece, and inductively coupled source power applicator, and an RF plasma source power generator coupled to the inductively coupled source power applicator for inductively coupling RF source power into the process zone. The reactor further includes an RF bias generator having an RF bias frequency and coupled to the workpiece support pedestal for applying an RF bias to the workpiece.
    Type: Application
    Filed: August 22, 2003
    Publication date: March 10, 2005
    Inventors: Kenneth Collins, Hiroji Hanawa, Kartik Ramaswamy, Andrew Nguyen, Amir Al-Bayati, Biagio Gallo, Gonzalo Monroy