Patents by Inventor Gouji Wakamatsu

Gouji Wakamatsu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20140162190
    Abstract: A fluorine-containing polymer for use in a radiation-sensitive resin composition is used for forming a photoresist film in a process of forming a resist pattern, including a liquid immersion lithographic process in which radiation is emitted through a liquid having a refractive index larger than the refractive index of air at a wavelength of 193 nm, and being present between a lens and the photoresist film. The fluorine-containing polymer has a weight average molecular weight determined by gel permeation chromatography in the range from 1,000 to 50,000 and a receding contact angle with water and the photoresist film formed therefrom is 70° or more.
    Type: Application
    Filed: February 12, 2014
    Publication date: June 12, 2014
    Applicant: JSR CORPORATION
    Inventors: Hiroki NAKAGAWA, Hiromitsu NAKASHIMA, Gouji WAKAMATSU, Kentarou HARADA, Yukio NISHIMURA, Takeo SHIOYA
  • Patent number: 8697344
    Abstract: A composition for forming an upper layer film includes a solvent and a resin component including a first resin having a first repeating unit and a second repeating unit. The first repeating unit is a repeating unit represented by a formula (1-1), a repeating unit represented by a formula (1-2), a repeating unit represented by a formula (1-3), or a combination thereof. The second repeating unit is a repeating unit represented by a formula (2-1), a repeating unit represented by a formula (2-2), or both thereof. The composition is to be used for forming the upper layer film in liquid immersion lithography.
    Type: Grant
    Filed: April 1, 2013
    Date of Patent: April 15, 2014
    Assignee: JSR Corporation
    Inventors: Daita Kouno, Norihiko Sugie, Gouji Wakamatsu, Norihiro Natsume, Yukio Nishimura, Makoto Sugiura
  • Patent number: 8697343
    Abstract: An object of the present invention is to provide a novel fluorine-containing polymer, a radiation-sensitive resin composition for liquid immersion lithography which contains the fluorine-containing polymer, which leads to a pattern having an excellent shape and excellent depth of focus, wherein the amount of an eluted component in a liquid for liquid immersion lithography such as water that comes in contact with the resist during exposure in liquid immersion lithography is little, and which provides a larger receding contact angle between the resist film and the liquid for liquid immersion lithography such as water, and a method for purifying the fluorine-containing polymer. The present resin composition comprises a novel fluorine-containing polymer (A) containing repeating units represented by the general formulae (1) and (2) and having Mw of 1,000-50,000, a resin (B) having an acid-unstable group, a radiation-sensitive acid generator (C), a nitrogen-containing compound (D) and a solvent (E).
    Type: Grant
    Filed: March 23, 2007
    Date of Patent: April 15, 2014
    Assignee: JSR Corporation
    Inventors: Hiroki Nakagawa, Hiromitsu Nakashima, Gouji Wakamatsu, Kentarou Harada, Yukio Nishimura, Takeo Shioya
  • Patent number: 8501385
    Abstract: A positive-tone radiation-sensitive composition is used in a resist pattern-forming method as a first positive-tone radiation-sensitive composition. A positive-tone radiation-sensitive composition includes a polymer, a photoacid generator, and a solvent. The polymer includes an acid-labile group and a crosslinkable group. The resist pattern-forming method includes providing the first positive-tone radiation-sensitive composition on a substrate to form a first resist pattern on the substrate. The first resist pattern is made to be inactive to light or heat so that the first resist pattern is insoluble in a second positive-tone radiation-sensitive composition. The second positive-tone radiation-sensitive composition is provided on the substrate to form a second resist pattern on the substrate on which the first resist pattern is formed.
    Type: Grant
    Filed: January 13, 2011
    Date of Patent: August 6, 2013
    Assignee: JSR Corporation
    Inventors: Yusuke Anno, Kouichi Fujiwara, Makoto Sugiura, Gouji Wakamatsu
  • Patent number: 8431332
    Abstract: The object of the invention is to provide a composition for forming an upper layer film for immersion exposure capable of forming an upper layer film effectively inhibited from developing defects through an immersion exposure process, such as a watermark defect and dissolution residue defect. Also provided are an upper layer film for immersion exposure and a method of forming a resist pattern. The composition for forming an upper layer film includes a resin ingredient and a solvent. The resin ingredient includes a resin (A) having at least one kind of repeating units selected among those represented by the formulae (1-1) to (1-3) and at least either of the two kinds of repeating units represented by the formulae (2-1) and (2-2).
    Type: Grant
    Filed: September 10, 2008
    Date of Patent: April 30, 2013
    Assignee: JSR Corporation
    Inventors: Daita Kouno, Norihiko Sugie, Gouji Wakamatsu, Norihiro Natsume, Yukio Nishimura, Makoto Sugiura
  • Patent number: 8206894
    Abstract: A resist pattern-forming method includes forming a first resist pattern using a first positive-tone radiation-sensitive resin composition. A resist pattern-miniaturizing resin composition is applied to the first resist pattern. The resist pattern-miniaturizing resin composition applied to the first resist pattern is baked and developed to form a second resist pattern that is miniaturized from the first resist pattern. A resist pattern-insolubilizing resin composition is applied to the second resist pattern. The resist pattern-insolubilizing resin composition applied to the second resist pattern is baked and washed to form a third resist pattern that is insoluble in a developer and a second positive-tone radiation-sensitive resin composition. A second resist layer is formed on the third resist pattern using the second positive-tone radiation-sensitive resin composition. The second resist layer is exposed and developed to form a fourth resist pattern.
    Type: Grant
    Filed: July 22, 2010
    Date of Patent: June 26, 2012
    Inventors: Takayoshi Abe, Atsushi Nakamura, Gouji Wakamatsu
  • Publication number: 20110111349
    Abstract: A resist pattern-insolubilizing resin composition is used in a resist pattern-forming method. The resist pattern-insolubilizing resin composition includes solvent and a resin. The resin includes a first repeating unit that includes a hydroxyl group in its side chain and at least one of a second repeating unit derived from a monomer shown by a following formula (1-1) and a third repeating unit derived from a monomer shown by a following formula (1-2), wherein for example, R1 represents a hydrogen atom, A represents a methylene group, R2 represents a group shown by a following formula (2-1) or a group shown by a following formula (2-2), R3 represents a methylene group, R4 represents a hydrogen atom, and n is 0 or 1, wherein each of R34 represents at least one of a hydrogen atom and a linear or branched alkyl group having 1 to 10 carbon atoms.
    Type: Application
    Filed: January 12, 2011
    Publication date: May 12, 2011
    Applicant: JSR Corporation
    Inventors: Gouji WAKAMATSU, Masafumi Hori, Kouichi Fujiwara, Makoto Sugiura
  • Publication number: 20110104612
    Abstract: A positive-tone radiation-sensitive composition is used in a resist pattern-forming method as a first positive-tone radiation-sensitive composition. A positive-tone radiation-sensitive composition includes a polymer, a photoacid generator, and a solvent. The polymer includes an acid-labile group and a crosslinkable group. The resist pattern-forming method includes providing the first positive-tone radiation-sensitive composition on a substrate to form a first resist pattern on the substrate. The first resist pattern is made to be inactive to light or heat so that the first resist pattern is insoluble in a second positive-tone radiation-sensitive composition. The second positive-tone radiation-sensitive composition is provided on the substrate to form a second resist pattern on the substrate on which the first resist pattern is formed.
    Type: Application
    Filed: January 13, 2011
    Publication date: May 5, 2011
    Applicant: JSR Corporation
    Inventors: Yusuke ANNO, Kouichi Fujiwara, Makoto Sugiura, Gouji Wakamatsu
  • Publication number: 20100310988
    Abstract: A resist pattern-forming method includes forming a first resist pattern using a first positive-tone radiation-sensitive resin composition. A resist pattern-miniaturizing resin composition is applied to the first resist pattern. The resist pattern-miniaturizing resin composition applied to the first resist pattern is baked and developed to form a second resist pattern that is miniaturized from the first resist pattern. A resist pattern-insolubilizing resin composition is applied to the second resist pattern. The resist pattern-insolubilizing resin composition applied to the second resist pattern is baked and washed to form a third resist pattern that is insoluble in a developer and a second positive-tone radiation-sensitive resin composition. A second resist layer is formed on the third resist pattern using the second positive-tone radiation-sensitive resin composition. The second resist layer is exposed and developed to form a fourth resist pattern.
    Type: Application
    Filed: July 22, 2010
    Publication date: December 9, 2010
    Applicant: JSR Corporation
    Inventors: Takayoshi ABE, Atsushi Nakamura, Gouji Wakamatsu
  • Publication number: 20100255416
    Abstract: The object of the invention is to provide a composition for forming an upper layer film for immersion exposure capable of forming an upper layer film effectively inhibited from developing defects through an immersion exposure process, such as a watermark defect and dissolution residue defect. Also provided are an upper layer film for immersion exposure and a method of forming a resist pattern. The composition for forming an upper layer film includes a resin ingredient and a solvent. The resin ingredient includes a resin (A) having at least one kind of repeating units selected among those represented by the formulae (1-1) to (1-3) and at least either of the two kinds of repeating units represented by the formulae (2-1) and (2-2).
    Type: Application
    Filed: September 10, 2008
    Publication date: October 7, 2010
    Applicant: JSR Corporation
    Inventors: Daita Kouno, Norihiko Sugie, Gouji Wakamatsu, Norihiro Natsume, Yukio Nishimura, Makoto Sugiura
  • Publication number: 20100068650
    Abstract: A method of patterning using double exposure patterning in a liquid immersion lithographic process is provided. The patterning method comprises a step of forming a first pattern on a substrate using a first resist layer forming composition, a step of making the first pattern inactive, a step of forming a second pattern on a substrate on which a pattern has been formed using a second resist layer forming composition and exposing the second resist layer to radiation, and a step of developing the exposed resist layer to form a second pattern in the space area of the first pattern. The first resist layer forming composition contains a cross-linking agent which accelerates conversion of the first layer from positive-working to negative-working.
    Type: Application
    Filed: March 17, 2008
    Publication date: March 18, 2010
    Inventors: Yukio Nishimura, Kaori Sakai, Nobuji Matsumura, Makoto Sugiura, Atsushi Nakamura, Gouji Wakamatsu, Yuusuke Anno
  • Publication number: 20090202945
    Abstract: An object of the present invention is to provide a novel fluorine-containing polymer, a radiation-sensitive resin composition for liquid immersion lithography which contains the fluorine-containing polymer, which leads to a pattern having an excellent shape and excellent depth of focus, wherein the amount of an eluted component in a liquid for liquid immersion lithography such as water that comes in contact with the resist during exposure in liquid immersion lithography is little, and which provides a larger receding contact angle between the resist film and the liquid for liquid immersion lithography such as water, and a method for purifying the fluorine-containing polymer. The present resin composition comprises a novel fluorine-containing polymer (A) containing repeating units represented by the general formulae (1) and (2) and having Mw of 1,000-50,000, a resin (B) having an acid-unstable group, a radiation-sensitive acid generator (C), a nitrogen-containing compound (D) and a solvent (E).
    Type: Application
    Filed: March 23, 2007
    Publication date: August 13, 2009
    Inventors: Hiroki Nakagawa, Hiromitsu Nakashima, Gouji Wakamatsu, Kentarou Harada, Yukio Nishimura, Takeo Shioya