Abstract: First and second read requests are received. First data is fetched in response to the first read request. The fetched first data is then stored. The fetched first data corresponds to an address of the first read request. The fetched first data is returned in response to the second read request.

Abstract: A completion packet may be returned before a data packet is written to a memory, if a field of the data packet indicates the data packet was sent due to a cache capacity eviction. The completion packet is returned after the data packet is written to the memory, if the field indicates the data packet was sent due to a flush operation.

Abstract: Examples disclosed herein provide moving a block of data between a source address and a target address. The examples disclose initiating a data move engine to move the block of data from the source address to the target address. Additionally, the examples disclose moving the block of data from the source address to the target address in a manner which allows a processor to concurrently access the block of data during the move.

Abstract: In one example in accordance with the present disclosure, a system may include a wear level handler to start a current rotation of a wear level algorithm through a plurality of cache line addresses in a region of memory and a location storer to store a rotation count of the rotation. The system may also include a data mover to move a cache line from the selected cache line address to a gap cache line address corresponding to the additional cache line address and a metadata setter to set a metadata of the gap cache line address to a value corresponding to the current rotation. The system may also include a current position determiner to determine, based on the value of at least one metadata and the rotation count, a current position of the current rotation after a power loss event.

Abstract: In various examples, a device comprises a memory. The memory comprises a plurality of dies and logic. The logic may: determine a tolerable bit error rate (BER) of the memory based on whether one of the plurality of dies has failed, and adjust a parameter of the memory based on the tolerable BER.

Abstract: In various examples, device comprises a memory and a memory controller. The memory controller comprises a write tracking buffer. The memory controller to: receive a write request bound for the memory, store an entry associated with the write request in the write tracking buffer, and determine an access pattern of the memory. The access pattern indicates a high or a low write bandwidth of the memory. The memory controller to execute the write request bound for the memory based on the determined memory access pattern, complete execution of the write request, and responsive to completing execution of the write request, free the entry associated with the write request from the write tracking buffer.

Abstract: Example implementations relate to determining resting times for memory blocks. In example implementations, accessed memory blocks in a cross-point non-volatile memory may be tracked. A respective resting time for each of the accessed memory blocks may be determined. An access command may be prevented from being issued to one of the accessed memory blocks.

Abstract: A security framework for a multi-tenant, multi-tier computer system with embedded processing is described. A multi-tenant security framework is created for a combined processing and storage hierarchy of multiple tiers. The multi-tenant security framework is applied to multiple execution levels of the memory device. The multi-tenant security framework is applied to multiple layers of application server software of the memory device. The multi-tenant security framework is also applied to multiple layers of storage server software of the memory device.

Abstract: Example implementations relate to a method of tracking data in a non-volatile memory device (NVM) device. A meta-data block from the NVM device is obtained, where the meta-data block includes meta-data. The meta-data block from the NVM device is used to track an associated data object, meta-data in the data block, a user data block, a meta-data block, or an additional data block. The meta-data block from the NVM device is used to point to the associated data object, the meta-data in the data block, the user data block, the meta-data block, or the additional data block. The meta-data block from the NVM device is further used to link the associated data object, the meta-data in the data block, the user data block, the meta-data block, or the additional data block.

Abstract: In various examples, a memory may comprise a first subarray having an associated first staging buffer, a second subarray having an associated second staging buffer, and request logic. The request logic may: receive a first write request associated with the first subarray, receive a second write request associated with the second subarray, store the first write request in the first staging buffer, store the second write request in the second staging buffer, and execute the first write request and the second write request.

Abstract: An example system for committing metadata to a non-volatile storage device may include a controller that includes determines a count of metadata that has been altered after being committed to the non-volatile storage device. Based on the count being above a first threshold, the controller may prevent alterations to the metadata. Based on the count being above a second threshold, the controller may commit the altered metadata to the non-volatile metadata.

Abstract: In various examples, a memory may comprise a subarray having an associated write extension buffer; and request logic to; receive a write request associated with the subarray, execute the write request. The request logic may further determine that the write request has not completed within an allocated number of write cycles, and responsive to determining that the write request has not completed the allocated number of write cycles: store the write request in the write extension buffer.

Abstract: A method for restricting write access to a non-volatile memory. The method includes receiving a request to write to a protected location in the non-volatile memory and determining whether the protected location is in a write-protected state. If the protected location is not in a write-protected state, the method includes writing data indicated by the request to the protected location. If the protected location is in a write-protected state, the method includes rejecting the request. The protected location stores a validation key to validate the contents of another portion of the non-volatile memory.

Abstract: A processing device includes an internal transmitter to receive packets and to forward those packets across a link to an external receiver external to the processing device. The internal transmitter is to receive a portion of a packet and to begin transmitting the portion across the link to the external receiver before the entire overall packet, of which the portion is a part, is received and validated. For a packet determined to have an error, the internal transmitter does not resend the overall packet across the link even if a message is received from the external receiver to resend the overall packet.

Abstract: A non-volatile memory device with multiple latency tiers includes at least two crossbar memory arrays, each crossbar memory array comprising a number of memory cells, each memory cell connected to a word line and a bit line at a cross point. The crossbar memory arrays each have a different latency. The crossbar memory arrays are formed on a single die.

Abstract: A state-retaining logic cell may include a plurality of inverters, an output node non-volatile (NVM) storage cell, and an input node NVM storage cell. The plurality of inverters may include a feed-forward inverter and a feed-back inverter disposed in a back-to-back arrangement. The output node NVM storage cell may include first and second terminals, where the first terminal is connected adjacent an output node of the feed-forward and the feed-back inverters, and the second terminal is connected to a programming rail. The input node NVM storage cell may include first and second terminals, where the first terminal is connected adjacent an input node of the feed-forward and the feed-back inverters, and the second terminal is connected to the programming rail.

Abstract: Techniques for retrieving data blocks from memory devices are provided. In one aspect, a request to retrieve a block of data may be received. The block of data may be in a line in a rank of memory. The rank of memory may include multiple devices. The devices used to store the line in the rank of memory may be determined. The determined devices may be read.

Abstract: Techniques for writing data to a subset of memory devices are described. In one aspect, a block of data to be written to a line in a rank of memory may be received. The rank of memory may comprise a set of memory devices. The block of data may be compressed. The compressed block of data may be written to a subset of the memory devices that comprise the line. The unwritten portions of the line may not be used to store valid data.

Abstract: Techniques for memory device writes based on mapping are provided. In one aspect, a block of data to be written to a line in a rank of memory may be received. The rank of memory may comprise multiple memory devices. The block of data may be written to a number of memory devices determined by the size of the block of data. A memory device mapping for the line may be retrieved. The mapping may determine the order in which the block of data is written to the memory devices within the rank. The block of data may be written to the memory devices based on the mapping.

Abstract: A device includes a cross-point array and an access circuit to access subsets of memory elements respectively corresponding to encoded blocks of data. For each of the subsets of memory elements, a row or a column of the cross-point array that includes a first memory element in the subset and a second memory element in the subset further includes a third memory element that is between the first and second memory elements along the row or column and is in one of the subsets corresponding to another of the encoded blocks.