Patents by Inventor Gregory Avenier

Gregory Avenier has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20210057521
    Abstract: A transistor is produced by forming a first part of a first region of the transistor in a semiconductor substrate by implanting dopants through an opening in an isolating trench formed at an upper surface of the semiconductor substrate. A second region of the transistor in the opening by epitaxy.
    Type: Application
    Filed: August 17, 2020
    Publication date: February 25, 2021
    Applicant: STMicroelectronics (Crolles 2) SAS
    Inventors: Alexis GAUTHIER, Pascal CHEVALIER, Gregory AVENIER
  • Publication number: 20210057520
    Abstract: A device including a transistor is fabricated by forming a first part of a first region of the transistor through the implantation of dopants through a first opening. The second region of the transistor is then formed in the first opening by epitaxy.
    Type: Application
    Filed: August 17, 2020
    Publication date: February 25, 2021
    Applicant: STMicroelectronics (Crolles 2) SAS
    Inventors: Alexis GAUTHIER, Pascal CHEVALIER, Gregory AVENIER
  • Publication number: 20200411381
    Abstract: A circuit includes at least one bipolar transistor and at least one variable capacitance diode. The circuit is fabricated using a method whereby the bipolar transistor and variable capacitance diode are jointly produced on a common substrate.
    Type: Application
    Filed: June 23, 2020
    Publication date: December 31, 2020
    Applicant: STMicroelectronics (Crolles 2) SAS
    Inventors: Gregory AVENIER, Alexis GAUTHIER, Pascal CHEVALIER
  • Publication number: 20200411382
    Abstract: At least one bipolar transistor and at least one variable capacitance diode are jointly produced by a method on a common substrate.
    Type: Application
    Filed: June 23, 2020
    Publication date: December 31, 2020
    Applicant: STMicroelectronics (Crolles 2) SAS
    Inventors: Pascal CHEVALIER, Alexis GAUTHIER, Gregory AVENIER
  • Patent number: 10468508
    Abstract: A bipolar transistor is supported by a single-crystal silicon substrate including a collector contact region. A first epitaxial region forms a collector region of a first conductivity type on the collector contact region. A second epitaxial region forms a base region of a second conductivity type. Deposited semiconductor material forms an emitter region of the first conductivity type. The collector region, base region and emitter region are located within an opening formed in a stack of insulating layers that includes a sacrificial layer. The sacrificial layer is selectively removed to expose a side wall of the base region. Epitaxial growth from the exposed sidewall forms a base contact region.
    Type: Grant
    Filed: January 17, 2019
    Date of Patent: November 5, 2019
    Assignee: STMicroelectronics (Crolles 2) SAS
    Inventors: Alexis Gauthier, Pascal Chevalier, Gregory Avenier
  • Patent number: 10381269
    Abstract: A PNP transistor is manufactured in parallel with the manufacture of NPN, NMOS, and PMOS transistors. A first semiconductor layer is deposited on a P-type doped semiconductor substrate and divided into first, second, and third regions, with the third region forming the base. An insulating well is deeply implanted into the substrate. First and second third wells, respectively of N-type and P-type are formed to extend between the second region and third region and the insulating well. A third well of P-type is formed below the third region to provide the collector. Insulating layers are deposited over the third region and patterned to form an opening. Epitaxial growth of a second P-type doped semiconductor layer is performed in the opening to provide the emitter.
    Type: Grant
    Filed: March 5, 2018
    Date of Patent: August 13, 2019
    Assignee: STMicroelectronics (Crolles 2) SAS
    Inventors: Pascal Chevalier, Gregory Avenier
  • Publication number: 20190148531
    Abstract: A bipolar transistor is supported by a single-crystal silicon substrate including a collector contact region. A first epitaxial region forms a collector region of a first conductivity type on the collector contact region. A second epitaxial region forms a base region of a second conductivity type. Deposited semiconductor material forms an emitter region of the first conductivity type. The collector region, base region and emitter region are located within an opening formed in a stack of insulating layers that includes a sacrificial layer. The sacrificial layer is selectively removed to expose a side wall of the base region. Epitaxial growth from the exposed sidewall forms a base contact region.
    Type: Application
    Filed: January 17, 2019
    Publication date: May 16, 2019
    Applicant: STMicroelectronics (Crolles 2) SAS
    Inventors: Alexis GAUTHIER, Pascal CHEVALIER, Gregory AVENIER
  • Patent number: 10224423
    Abstract: A bipolar transistor is supported by a single-crystal silicon substrate including a collector contact region. A first epitaxial region forms a collector region of a first conductivity type on the collector contact region. A second epitaxial region forms a base region of a second conductivity type. Deposited semiconductor material forms an emitter region of the first conductivity type. The collector region, base region and emitter region are located within an opening formed in a stack of insulating layers that includes a sacrificial layer. The sacrificial layer is selectively removed to expose a side wall of the base region. Epitaxial growth from the exposed sidewall forms a base contact region.
    Type: Grant
    Filed: October 13, 2017
    Date of Patent: March 5, 2019
    Assignee: STMircoelectronics (Crolles 2) SAS
    Inventors: Alexis Gauthier, Pascal Chevalier, Gregory Avenier
  • Publication number: 20180197781
    Abstract: A PNP transistor is manufactured in parallel with the manufacture of NPN, NMOS, and PMOS transistors. A first semiconductor layer is deposited on a P-type doped semiconductor substrate and divided into first, second, and third regions, with the third region forming the base. An insulating well is deeply implanted into the substrate. First and second third wells, respectively of N-type and P-type are formed to extend between the second region and third region and the insulating well. A third well of P-type is formed below the third region to provide the collector. Insulating layers are deposited over the third region and patterned to form an opening. Epitaxial growth of a second P-type doped semiconductor layer is performed in the opening to provide the emitter.
    Type: Application
    Filed: March 5, 2018
    Publication date: July 12, 2018
    Applicant: STMicroelectronics (Crolles 2) SAS
    Inventors: Pascal Chevalier, Gregory Avenier
  • Patent number: 9941170
    Abstract: A PNP transistor is manufactured in parallel with the manufacture of NPN, NMOS, and PMOS transistors. A first semiconductor layer is deposited on a P-type doped semiconductor substrate and divided into first, second, and third regions, with the third region forming the base. An insulating well is deeply implanted into the substrate. First and second third wells, respectively of N-type and P-type are formed to extend between the second region and third region and the insulating well. A third well of P-type is formed below the third region to provide the collector. Insulating layers are deposited over the third region and patterned to form an opening. Epitaxial growth of a second P-type doped semiconductor layer is performed in the opening to provide the emitter.
    Type: Grant
    Filed: March 6, 2017
    Date of Patent: April 10, 2018
    Assignee: STMicroelectronics (Crolles 2) SAS
    Inventors: Pascal Chevalier, Gregory Avenier
  • Publication number: 20180025945
    Abstract: A PNP transistor is manufactured in parallel with the manufacture of NPN, NMOS, and PMOS transistors. A first semiconductor layer is deposited on a P-type doped semiconductor substrate and divided into first, second, and third regions, with the third region forming the base. An insulating well is deeply implanted into the substrate. First and second third wells, respectively of N-type and P-type are formed to extend between the second region and third region and the insulating well. A third well of P-type is formed below the third region to provide the collector. Insulating layers are deposited over the third region and patterned to form an opening. Epitaxial growth of a second P-type doped semiconductor layer is performed in the opening to provide the emitter.
    Type: Application
    Filed: March 6, 2017
    Publication date: January 25, 2018
    Applicant: STMicroelectronics (Crolles 2) SAS
    Inventors: Pascal Chevalier, Gregory Avenier
  • Patent number: 9640631
    Abstract: A method for manufacturing a bipolar transistor, including the steps of: forming a first surface-doped region of a semiconductor substrate having a semiconductor layer extending thereon with an interposed first insulating layer; forming, at the surface of the device, a stack of a silicon layer and of a second insulating layer; defining a trench crossing the stack and the semiconductor layer opposite to the first doped region, and then an opening in the exposed region of the first insulating layer; forming a single-crystal silicon region in the opening; forming a silicon-germanium region at the surface of single-crystal silicon region, in contact with the remaining regions of the semiconductor layer and of the silicon layer; and forming a second doped region at least in the remaining space of the trench.
    Type: Grant
    Filed: December 15, 2015
    Date of Patent: May 2, 2017
    Assignee: STMicroelectronics SA
    Inventors: Alain Chantre, Pascal Chevalier, Gregory Avenier
  • Publication number: 20160099334
    Abstract: A method for manufacturing a bipolar transistor, including the steps of: forming a first surface-doped region of a semiconductor substrate having a semiconductor layer extending thereon with an interposed first insulating layer; forming, at the surface of the device, a stack of a silicon layer and of a second insulating layer; defining a trench crossing the stack and the semiconductor layer opposite to the first doped region, and then an opening in the exposed region of the first insulating layer; forming a single-crystal silicon region in the opening; forming a silicon-germanium region at the surface of single-crystal silicon region, in contact with the remaining regions of the semiconductor layer and of the silicon layer; and forming a second doped region at least in the remaining space of the trench.
    Type: Application
    Filed: December 15, 2015
    Publication date: April 7, 2016
    Inventors: Alain Chantre, Pascal Chevalier, Gregory Avenier
  • Publication number: 20130270649
    Abstract: A method for manufacturing a bipolar transistor, including the steps of: forming a first surface-doped region of a semiconductor substrate having a semiconductor layer extending thereon with an interposed first insulating layer; forming, at the surface of the device, a stack of a silicon layer and of a second insulating layer; defining a trench crossing the stack and the semiconductor layer opposite to the first doped region, and then an opening in the exposed region of the first insulating layer; forming a single-crystal silicon region in the opening; forming a silicon-germanium region at the surface of single-crystal silicon region, in contact with the remaining regions of the semiconductor layer and of the silicon layer; and forming a second doped region at least in the remaining space of the trench.
    Type: Application
    Filed: April 9, 2013
    Publication date: October 17, 2013
    Applicant: STMicroelectronics SA
    Inventors: Alain Chantre, Pascal Chevalier, Gregory Avenier
  • Patent number: 7476574
    Abstract: An integrated circuit semiconductor substrate includes an active silicon layer separated from a silicon substrate layer by a buried insulating material layer. The active silicon layer, however, locally includes at least one over-thickness on the side of the buried layer, while maintaining a flat surface state of the semiconductor layer across the integrated circuit. The over-thickness is created by forming a cavity under the active silicon layer in the local area, and then providing the over-thickness by partially filling the cavity at the bottom of the active silicon layer through epitaxial growth. An insulating layer then fills the remaining portions of the cavity.
    Type: Grant
    Filed: January 19, 2006
    Date of Patent: January 13, 2009
    Assignee: STMicroelectronics S.A.
    Inventors: Michel Marty, Grégory Avenier
  • Publication number: 20060189157
    Abstract: An integrated circuit semiconductor substrate includes an active silicon layer separated from a silicon substrate layer by a buried insulating material layer. The active silicon layer, however, locally includes at least one over-thickness on the side of the buried layer, while maintaining a flat surface state of the semiconductor layer across the integrated circuit. The over-thickness is created by forming a cavity under the active silicon layer in the local area, and then providing the over-thickness by partially filling the cavity at the bottom of the active silicon layer through epitaxial growth. An insulating layer then fills the remaining portions of the cavity.
    Type: Application
    Filed: January 19, 2006
    Publication date: August 24, 2006
    Applicant: STMicroelectronics S.A.
    Inventors: Michel Marty, Gregory Avenier