Patents by Inventor Gregory Charles Herdt

Gregory Charles Herdt has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8592307
    Abstract: A multi-layer TiN film with reduced tensile stress and discontinuous grain structure, and a method of fabricating the TiN film are disclosed. The TiN layers are formed by PVD or IMP in a nitrogen plasma. Tensile stress in a center layer of the film is reduced by increasing N2 gas flow to the nitrogen plasma, resulting in a Ti:N stoichiometry between 1:2.1 to 1:2.3. TiN films thicker than 40 nanometers without cracks are attained by the disclosed process.
    Type: Grant
    Filed: August 23, 2012
    Date of Patent: November 26, 2013
    Assignee: Texas Instruments Incorporated
    Inventors: Gregory Charles Herdt, Joseph W. Buckfeller
  • Patent number: 8575752
    Abstract: A multi-layer TiN film with reduced tensile stress and discontinuous grain structure, and a method of fabricating the TiN film are disclosed. The TiN layers are formed by PVD or IMP in a nitrogen plasma. Tensile stress in a center layer of the film is reduced by increasing N2 gas flow to the nitrogen plasma, resulting in a Ti:N stoichiometry between 1:2.1 to 1:2.3. TiN films thicker than 40 nanometers without cracks are attained by the disclosed process.
    Type: Grant
    Filed: November 19, 2012
    Date of Patent: November 5, 2013
    Assignee: Texas Instruments Incorporated
    Inventors: Gregory Charles Herdt, Joseph W. Buckfeller
  • Publication number: 20120322258
    Abstract: A multi-layer TiN film with reduced tensile stress and discontinuous grain structure, and a method of fabricating the TiN film are disclosed. The TiN layers are formed by PVD or IMP in a nitrogen plasma. Tensile stress in a center layer of the film is reduced by increasing N2 gas flow to the nitrogen plasma, resulting in a Ti:N stoichiometry between 1:2.1 to 1:2.3. TiN films thicker than 40 nanometers without cracks are attained by the disclosed process.
    Type: Application
    Filed: August 23, 2012
    Publication date: December 20, 2012
    Applicant: TEXAS INSTRUMENTS INCORPORATED
    Inventors: Gregory Charles HERDT, Joseph W. BUCKFELLER
  • Patent number: 8328585
    Abstract: A multi-layer TiN film with reduced tensile stress and discontinuous grain structure, and a method of fabricating the TiN film are disclosed. The TiN layers are formed by PVD or IMP in a nitrogen plasma. Tensile stress in a center layer of the film is reduced by increasing N2 gas flow to the nitrogen plasma, resulting in a Ti:N stoichiometry between 1:2.1 to 1:2.3. TiN films thicker than 40 nanometers without cracks are attained by the disclosed process.
    Type: Grant
    Filed: August 7, 2009
    Date of Patent: December 11, 2012
    Assignee: Texas Instruments Incorporated
    Inventors: Gregory Charles Herdt, Joseph W. Buckfeller
  • Publication number: 20100032842
    Abstract: A multi-layer TiN film with reduced tensile stress and discontinuous grain structure, and a method of fabricating the TiN film are disclosed. The TiN layers are formed by PVD or IMP in a nitrogen plasma. Tensile stress in a center layer of the film is reduced by increasing N2 gas flow to the nitrogen plasma, resulting in a Ti:N stoichiometry between 1:2.1 to 1:2.3. TiN films thicker than 40 nanometers without cracks are attained by the disclosed process.
    Type: Application
    Filed: August 7, 2009
    Publication date: February 11, 2010
    Applicant: TEXAS INSTRUMENTS INCORPORATED
    Inventors: Gregory Charles HERDT, Joseph W. BUCKFELLER